玻璃陶瓷材料中Tm3+离子红外到蓝色上转换发光

系统研究了PbF2+GeO2+WO3ⅩⅣTmF3玻璃陶瓷材料中,在近红外光(1.06μm)激发下,Tm3+离子的发光特性.实验中观测到Tm3+离子的两组峰值位置分别在20920cm-1和22173cm-1的蓝色上转换发光,并证实这两组上转换发光分别与吸收三个和四个光子有关,同时建立了上转换发光的模型.为了选择最佳掺杂浓度,详细地测量了Tm3+离子峰值为20920cm-1的蓝色上转换发光强度与TmF3浓度的关系.     

Ba（n，x）~（134）Cs，~（134）Ba（n，2n）~（133）Ba，

用中子活化法相对于５４Ｆｅ（ｎ，Ｐ）５４Ｍｎ反应，在１３．５０—１４．８０ＭｅＶ中子能区测量了Ｂａ（ｎ，ｘ）１３４Ｃｓ，１３４Ｂａ（ｎ，２ｎ）１３３Ｂａ，１４０Ｃｅ（ｎ，２ｎ）１３９Ｃｅ，１４２Ｃｅ（ｎ，２ｎ）１４１Ｃｅ和２３Ｎａ（ｎ，２ｎ）２２Ｎａ的反应截面．并将所测的结果和其他作者的结果进行了比较，中子能量是用９０Ｚｒ（ｎ，２ｎ）８９ｍ＋ｇＺｒ反应和９３Ｎｂ（ｎ，２ｎ）９２ｍＮｂ反应截面比法测定的。     

X分形晶格上Gauss模型的临界性质

采用实空间重整化群变换的方法,研究了2维和d(d>2)维X分形晶格上Gauss模型的临界性质.结果表明:这种晶格与其他分形晶格一样,在临界点处,其最近邻相互作用参量也可以表示为K=bqiqi(qi是格点i的配位数,bqi是格点i上自旋取值的Gauss分布常数)的形式;其关联长度临界指数v与空间维数d(或分形维数df)有关.这与Ising模型的结果存在很大的差异. 关键词： X分形晶格 重整化群 Gauss模型 临界性质     

时间分辨红外发射光谱法对自由基反应的研究

在过去的 15年中 ,傅立叶变换红外发射光谱法广泛应用于研究气相自由基反应 .Sloan首先研究了O(1D)的反应 ,随后Leone和Hancock研究了O(3 P)的反应 .此后 ,孔繁敖和朱起鹤等研究了小自由基 ,包括CH、CH2 、CH3 、C2 H3 、C2 H5、C2 H、C3 H3 和C3 H5与O2 、NO、N2 O、NO2 等分子的反应。在红外光谱中观察到各个反应的初生产物和初步反应通道 ,和从头算的理论研究结合起来 ,这些反应的机理已基本弄清 .     

关于“信息熵”分析及其应用的研究

本文用Ｓｈａｎｎｏｎ熵函数的观点及最大离散熵原理，探讨了对随机试验项目的优选问题：即压缩某种“不确定性”试验项目的实施与探索．并通过应用实例的计算，获得了满意的聚类效果．这种方法对于信息资料的数据处理及压缩“不确定性“验项目具有普遍意义．     

OSCILLATION OF A FORCED SECOND ORDER NONLINEAR EQUATION

ＯＳＣＩＬＬＡＴＩＯＮ ＯＦ Ａ ＦＯＲＣＥＤ ＳＥＣＯＮＤ ＯＲＤＥＲ ＮＯＮＬＩＮＥＡＲ ＥＱＵＡＴＩＯＮ ￥ＫＯＮＧＱＩＮＧＫＡＩ；ＺＨＡＮＧＢＩＮＧＧＥＮＡｂｓｔｒａｃｔ：Ｔｈｉｓｐａｐｅｒｇｉｖｅｓｓｅｖｅｒａｌｃｒｉｔｅｒｉａｏｎｔｈｅｏ...     

应变Si1-xGex层中p型杂质电离常温和低温特性

本文采用解析的方法计算了应变Si1-xGex层中p型杂质电离度与Ge组分x、温度T以及掺杂浓度N的关系.发现常温时,在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度的先变小,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加先变大,而后几乎不变;重掺杂时,杂质电离能变为0后,杂质电离度为1.低温下,轻掺杂时,载流子低温冻析效应较为明显,杂质的电离度普遍较小,当掺杂浓度大于Mott转换点时,载流子冻析效应不再明显,电离率迅速上升到1.在同一Ge组分下,随着掺杂浓度的升高,杂质的电离度先变小,后变大,而后又迅速上升到1.在同一掺杂浓度下,轻掺杂时,杂质的电离度随Ge组分的增加变大;重掺杂时,杂质电离能变为0后,杂质电离度为1.     

正则带的半格结构

Petrich解决了一般带的构造定理（见[1]或[2]），在此基础上，我们将证明正则带（满足等式axya=axaya的带）的一些特征，并给出一个带为正则带或右似正规带（满足等式xya=xaya的带）的充分必要条件，这些结果是Yamada和Kimura的关于正规带（满足等式axya=ayxa的带）的结果的推广，正规带被他们描述为矩形带的强半格（见[1]或[3]）。     

Photodecomposition of several compounds commonly used as sunscreen agents

The photolysis reactions of three compounds commonly used as a sunscreen agents, Parsol 1789 (1-[4-(1,1-dimethylethyl)phenyl]-3-(4-methoxyphenyl)-1,3- propanedione), Oxybenzone ((2-hydroxy-4-methoxyphenyl)phenyl-methanone) and Padimate O (2-ethylhexyl-4-(dimethylamino)benzoate), were investigated to provide a chemical background to aid in the understanding of the photosensitization of the sunscreen agents. Photolysis was carried out in cyclohexane for 70–140 h using a mercury vapor lamp (450W) without excluding oxygen.

Irradation of Parsol 1789 in cyclohexane yielded tert-butylbenzene, p-tert-butylbenzoic acid and p-methoxybenzoic acid; products obtained from the combination of the sunscreen with the solvent included the cyclohexyl esters of p-methoxybenzoic acid, p-tert-butylbenzoic acid and methanoic acid; products obtained from the solvent included cyclohexanol, cyclohexanone and dicyclohexyl ether.

Irradiation of Oxybenzone in the cyclohexane for 100 h produced no detectable products by either gas or liquid chromatographic analysis. Oxybenzone was recovered unchanged and no products were observed from the photoinitiated reaction of oxygen with the solvent.

Irradiation of Padimate O in cyclohexane yielded the ethylhexyl esters of p-aminobenzoic acid, p-monomethylaminobenzoic acid and p-dimethylamino (o/m)-methylbenzoic acid, as well as products from the photoinitiated reaction of oxygen with the solvent.     

Temperature dependence of excitonic luminescence from nanocrystalline ZnO films

The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect.