B-Spline with Symplectic Algorithm Method for Solution of Time-Dependent Schrodinger Equations

A B-spline with the symplectic algorithm method for the solution of time-dependent Schrodinger equations （TDSEs） is introduced. The spatial part of the wavefunction is expanded by B-spline and the time evolution is given in a symplectic scheme. This method allows us to obtain a highly accurate and stable solution of TDSEs. The effectiveness and efficiency of this method is demonstrated by the high-order harmonic spectra of one-dimensional atoms in comparison with other references.     

甾体化合物的命名

甾体化合物的种类极多,最主要的有固醇(sterols)、胆汁酸(bile acids)、性激素(sex hormones)、副肾皮激素(adrenocortical hormones)、心脏有效素(包括植物性强心配基及动物性蟾蜍配基)、甾体皂素(甙)及甾体植物碱。甾体化合物广存于动植物界,它们都是环戊骈全氢菲(cyclo-pentano-perhydrophenanthrene)的衍     

GaAs光导开关飞秒激光点触发实验及分析

针对光导开关阵列和光纤分束耦合的实际应用环境,提出一种新的实验方案,用于测试当触发光源相对于开关光敏面为点光源时入射位置对输出脉冲的影响.实验证明,不同的入射位置对开关输出脉冲有很大的影响.在入射光从负极向正极扫描过程中输出脉冲逐渐增强,在正极附近输出达到峰值,但在电极边缘处有所减弱.分析表明,这一现象和开关体内电场的分布有密切联系.     

High accuracy calculation of the hydrogen negative ion in strong magnetic fields

Using a full configuration-interaction method with Hylleraas-Gaussian basis function, this paper investigates the 1¹0⁺, 1¹(–1)⁺ and 1¹(–2)⁺ states of the hydrogen negative ion in strong magnetic fields. The total energies, electron detachment energies and derivatives of the total energy with respect to the magnetic field are presented as functions of magnetic field over a wide range of field strengths. Compared with the available theoretical data, the accuracy for the energies is enhanced significantly. The field regimes 3 < γ < 4 and 0.02 < γ < 0.05, in which the 1¹(–1)⁺ and 1¹(–2)⁺ states start to become bound, respectively, are also determined based on the calculated electron detachment energies.     

Mg/Cd共掺杂ZnO电子结构与光学性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势法,研究了Mg/Cd(不同的Cd浓度)共掺杂ZnO的电子结构和光学性质.研究表明:Mg/Cd共掺杂ZnO,体系的晶胞尺寸变大,但结构稳定.当Mg/Cd为1:1时,吸收边略微发生蓝移.随Cd的掺杂浓度增加,导带部分逐渐下移,禁带宽度变窄,出现红移现象.除此之外体系的吸收率和反射率也减小.说明Mg/Cd共掺杂ZnO,不仅使得体系光学谱丰富,而且透射性增强.这对实验中制备出高透射率的材料具有一定的指导意义.     

8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide分子的晶体结构

运用层析法、结晶法从狭苞橐吾全草中分离得到艾里莫芬烷型倍半萜8β-hydroxyeremophil-7(11)-ene-12,8α(4β,6α)-diolide化合物,并通过质谱、核磁共振氢谱和碳谱、氢核-氢核相关谱、异核多量子相干谱和异核多键相干谱进行结构鉴定．其单晶经X射线衍射测试表明,其晶体属正交晶系,空间群为P212121,晶胞参数为: a=6．8519(5),b=10．7191(8),c=18．5942(14)A,V=1365．67(18) A3,Z=4,Dc=1．354 mg／m3．F(000)=592,μ=0．101 mm-1     

基于多波长布里渊光纤激光器的温度传感特性

为了在高腐蚀、高辐射和强电磁干扰等复杂环境下实现对温度的精确测量,设计并实验了一种基于传感多波长布里渊光纤激光器(MBFL)和参考MBFL的高灵敏度全光纤温度传感器。理论和实验上分析了布里渊散射光的频移与温度变化之间的关系,根据输出斯托克斯激光信号对拍频所得微波信号的频移变化,测量温度的变化。通过带宽为0.1 nm的可调谐光滤波器选择第10阶斯托克斯激光信号对输出,并对其进行拍频探测,实现对传感MBFL周围温度变化的精确测量。通过拍频探测第10阶斯托克斯激光信号对,得出其灵敏度为10.829 MHz/℃。当选用第10阶斯托克斯激光信号对进行温度测量时,温度变化40℃的测量误差约为0.138℃。     

图形处理器并行计算用于离子发动机粒子模拟

 为了研究离子发动机羽流对航天器的影响,采用质点网格-蒙特卡罗碰撞方法对离子发动机羽流中的交换电荷离子进行了模拟。利用计算设备统一架构技术,开发出一套基于图形处理器的并行粒子模拟程序。随机数生成采用并行MT19937伪随机数生成器算法,电场方程使用完全近似存储格式的代数多重网格法求解。r-z轴对称坐标系中,在z=0 m处获得的电流密度均值为4.5×10^-5 A/m²,图形处理器所得结果与中央处理器模拟结果吻合。在16核心的NVIDIA GeForce 9400 GT图形显示卡上,取得相对于Intel Core 2 E6300中央处理器4.5~10.0倍的加速比。     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.