采用BCB平整技术的高速850 nm垂直面发射激光器

垂直腔面发射激光器因其具有低阈值、低功耗、可实现高速调制等优势,广泛地应用于光通信和光互连等领域。寄生电容是影响激光器的调制带宽的主要因素之一。本文通过采用低k值的苯并环丁烯（BCB）平整技术有效地降低了垂直腔面发射激光器的寄生电容。详细研究了BCB平整技术的最优工艺参数,为未来高速垂直腔面发射激光器的制造技术提供参考。低k值BCB平整垂直腔面发射激光器在7 μm氧化孔径下3 dB小信号调制带宽可达15.2 GHz。     

采用BCB平整技术的高速850nm垂直面发射激光器（英文）

垂直腔面发射激光器因其具有低阈值、低功耗、可实现高速调制等优势,广泛地应用于光通信和光互连等领域。寄生电容是影响激光器的调制带宽的主要因素之一。本文通过采用低k值的苯并环丁烯(BCB)平整技术有效地降低了垂直腔面发射激光器的寄生电容。详细研究了BCB平整技术的最优工艺参数,为未来高速垂直腔面发射激光器的制造技术提供参考。低k值BCB平整垂直腔面发射激光器在7μm氧化孔径下3 d B小信号调制带宽可达15.2 GHz。     

一维石墨烯超晶格上的氢吸附

通过化学气相沉积法在一种典型的高指数面铜(410)-氧上制备出了一维石墨烯超晶格,并利用拉曼光谱(Raman)、低能电子衍射(LEED)、扫描隧道显微术(STM)等方法研究了氢原子在该超晶格上的吸附.实验结果揭示了由于超晶格的调制作用所引起的无缺陷石墨烯区域的选择性吸附,氢原子优先吸附在石墨烯超晶格一维周期中的相同部位.这一发现为进一步通过一维超晶格调控石墨烯的性质提供了更多可能.在石墨烯上的吸附氢原子除了单个或成对存在之外,实验还首次观察到一种新的三氢原子位型.     

Moir patterns and step edges on few-layer graphene grown on nickel films

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir′e patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir′e patterns while both sublattices are seen in regions with moir′e pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.     

共振长短波方程的孤波解

本文研究了共振长短波方程的孤波解.利用扩展映射法和符号计算,得到许多新的孤波解.这些孤波解能很好地模拟水波,辅助方程用更一般方程代替的扩展映射法能更有效找到这些孤波解.

Abstract：

In this article,soliton solutions of the long-short wave resonance equations are investigated.By the extended mapping method and symbolic computation,many new exact soliton solutions are obtained.These soliton solutions are fascinating in modeling water waves.The extended mapping method,with the auxiliary ordinary equations replaced by more general ones,is more effective to find these soliton solutions.     

Moire patterns and step edges on few-layer graohene grown on nickel films

Few-layer graphene grown on Ni thin films has been studied by scanning tunneling microscopy. In most areas on the surfaces, moir6 patterns resulted from rotational stacking faults were observed. At a bias lower than 200 mV, only one sublattice shows up in regions without moir6 patterns while both sublattices are seen in regions with moir6 pattens. This phenomenon can be used to identify AB stacked regions. The scattering characteristics at various types of step edges are different from those of monolayer graphene edges, either armchair or zigzag.     

广义Davey-Stewartson方程的孤波解

在本文中,利用辅助的常微分方程来代替更一般的方程,扩张映射方法被呈现.通过这种方法,使用符号计算关于Davey-Stewartson方程的许多新的孤波解被构造.