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在 10~ 30 0 K的温度范围内 ,测量了用液封直拉法 (L EC)生长的 n- In P经高温退火后形成的未掺杂SI- In P晶体的正电子寿命谱 .用 PATFIT和 MEL T两种技术分析了正电子寿命谱 .常温下的结果表明 ,SI- In P中存在铟空位 VIn或与杂质的复合体缺陷 .观察到在 10~ 2 2 0 K之间正电子的平均寿命 τm 随温度的升高而减小 ,表明上述缺陷是带负电荷的铟空位 VIn的氢复合体 ;但是在低温下还存在正电子浅捕获态 ,浅捕获中心很可能是反位缺陷 In2 - P ,因此在 2 2 0~ 30 0 K范围内平均寿命τm 随温度的升高而略有上升 . 相似文献
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Fabrication of Two-Dimensional Photonic Crystals with Triangular Rods by Single-Exposure Holographic Lithography 下载免费PDF全文
We demonstrate a single-exposure holographic fabrication of two-dimensional photonic crystal with round- cornered triangular 'atoms' arranged in a triangular lattice. Simulation results show that double absolute photonic band gaps exist in this structure. Our experimental results show that holographic lithography can be used to fabricate photonic crystals not only with various lattice structures but also with various kinds of structures of the atoms, to obtain absolute band gaps or a particular band gap structure. Furthermore, the single-exposure holographic method not only makes the fabrication process simple and convenient but also makes the structures of the atoms more perfect. 相似文献
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