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利用Marden和Strebel关于高度映射的结果,伍胜健设计了Teichmüller映射初始二次微分的迭代算法,由此给出了关于Teichmüller映射初始二次微分计算的理论结果,利用该结果并结合Gortler,Thurston和Palmer关于离散二次微分的研究,本文设计了初始二次微分的计算机算法. 相似文献
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The ultra-violet(UV) detection has a wide application in both civil and military fields.ZnO is recognized as one of ideal materials for fabricating the UV photodetectors due to its plenty of advantages,such as wide bandgap,low cost,being environment-friendly,high radiation hardness,etc.Moreover,the alloying of ZnO with MgO to make ZnMgO could continually increase the band gap from ~ 3.3 eV to ~ 7.8 eV,which allows both solar blind and visible blind UV radiation to be detected.As is well known,ZnO is stabilized in the wurtzite structure,while MgO is stabilized in the rock salt structure.As a result,with increasing the Mg content,the crystal structure of ZnMgO alloy will change from wurtzite structure to rock salt structure.Therefore,ZnMgO photodetectors can be divided into three types based on the structures of alloys,namely,wurtzite-phase,cubic-phase and mixed-phase devices.In this paper,we review recent development and make the prospect of three types of ZnMgO UV photodetectors. 相似文献
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Boosting the performance of crossed ZnO microwire UV photodetector by mechanical contact homo-interface barrier 下载免费PDF全文
Yinzhe Liu 《中国物理 B》2022,31(10):106101-106101
One-dimensional (1D) micro/nanowires of wide band gap semiconductors have become one of the most promising blocks of high-performance photodetectors. However, in the axial direction of micro/nanowires, the carriers can transport freely driven by an external electric field, which usually produces large dark current and low detectivity. Here, an UV photodetector built from three cross-intersecting ZnO microwires with double homo-interfaces is demonstrated by the chemical vapor deposition and physical transfer techniques. Compared with the reference device without interface, the dark current of this ZnO double-interface photodetector is significantly reduced by nearly 5 orders of magnitude, while the responsivity decreases slightly, thereby greatly improving the normalized photocurrent-to-dark current ratio. In addition, ZnO double-interface photodetector exhibits a much faster response speed (~ 0.65 s) than the no-interface device (~ 95 s). The improved performance is attributed to the potential barriers at the microwire—microwire homo-interfaces, which can regulate the carrier transport. Our findings in this work provide a promising approach for the design and development of high-performance photodetectors. 相似文献
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