New Double-Periodic Soliton Solutions for the (2+1)-Dimensional Breaking Soliton Equation

Under investigation is the (2+1)-dimensional breaking soliton equation. Based on a special ansätz functions and the bilinear form, some entirely new double-periodic soliton solutions for the (2+1)-dimensional breaking soliton equation are presented. With the help of symbolic computation software Mathematica, many important and interesting properties for these obtained solutions are revealed with some figures.     

聚N,N-双水杨醛乙二胺合钴修饰超微电极的制备及其在一氧化氮测定中应用的研究

通过电化学聚合法制备了聚Ｎ，Ｎ－双水杨醛乙二胺合钴［ｐｏｌｙＣｏ（Ｓａｌｅｎ）］修饰超微电极，研究了该修饰电极的电催化性质及其在一氧化氮（ＮＯ）测定中的应用．实验结果表明，ｐｏｌｙＣｏ（Ｓａｌｅｎ）修饰超微电极对ＮＯ的测定有高的灵敏度，ＮＯ的浓度在２．０×１０－８～２．８×１０－６ｍｏｌ／Ｌ范围内，电流与浓度呈良好的线性关系，线性相关系数为０．９９９８，检出限为１．０×１０－８ｍｏｌ／Ｌ；该电极进一步修饰Ｎａｆｉｏｎ后，生物体中常见的物质如抗坏血酸、儿茶酚胺类神经递质的代谢物、ＮＯ的氧化产物ＮＯ－２等不干扰测定．本传感器可以满足ＮＯ在体分析的需要．     

带p-Laplacian算子的四点边值问题拟对称正解的存在性

利用范数形式的锥拉伸与压缩不动点定理,研究了一类p-Laplacian方程四点边值问题(φp(u′(t)))′(t)+λf(t,u(t))=0,t∈(0,1),u(0)-βu′(ξ)=0,u(ξ)-δu′(η)=u(1)+δu′(1+ξ-η),其中φp(s)=sp-2·s,p>1.获得了其拟对称正解的存在性定理.     

具有p-Laplace算子的一类高阶奇异边值问题解的存在性

本文研究下面问题的正解其中Φp(s)=|s|p-2s,p>1．f在点x(i)=0,i=0,．．．,n-2可能是奇异的．证明建立在Leray-Schauder拓扑度和Vitali收敛定理的基础上．     

ZnO纳米结构的电化学法可控生长及其机理

以溶胶-凝胶法制备c轴取向为主的ZnO薄膜作缓冲层,采用阴极电化学沉积技术制备高c轴取向ZnO纳米结构.在0.7 mA/cm2的恒定电流密度下生长出直径约50 nm、密度为2.5×107mm-2的垂直向上的ZnO纳米杆阵列,通过逐渐增大电流密度(0.4~0.9 mA/cm2)或逐渐减小电流密度(0.9~0.4 mA/cm2)分别研制出直径逐渐变小或变大的纳米杆阵列,实现了纳米杆形貌、尺寸的可控生长.c轴择优取向的同质ZnO缓冲层既为纳米杆的定向生长提供了形核中心又减小了纳米杆的晶格失配度,有ZnO缓冲层样品的强紫外光发射和较弱的与缺陷相关的可见光发射的光致发光结果证实了缓冲层对提高样品晶体质量的重要作用.     

RIGHT FOCAL BOUNDARY VALUE PROBLEM WITH SINGULARITY

This article proves existence results for singular problem (-1)^n-px⁽ⁿ⁾(t)=f(t, x(t), ..., x^(n-1)(t)), for 0(i)(0)=0, i=1, 2, ..., p-1, x⁽ⁱ⁾(1)=0, i=p, p+1, ... , n-1. Here the positive Carathedory function f may be singular at the zero value of all its phase variables. The interesting point is that the degrees of some variables in the nonlinear term f(t, x₀, x₁, ..., x_n-1) are allowable to be greater than 1. Proofs are based on the Leray-Schauder degree theory and Vitali's convergence theorem. The emphasis in this article is that f depends on all higher-order derivatives. Examples are given to illustrate the main results of this article.     

聚N,N-双水杨醛乙二胺合铁一氧化氮超微传感器的研究

报道了电化学聚合Ｎ，Ｎ－双水杨酸乙二胺合铁［ｐ－Ｆｅ（ｓａｌｅｎ）］一氧化氮（ＮＯ）超微传 感器的制备、ＮＯ的响应及机理研究．实验发现，用电化学聚合的方法制备的 ｐ－Ｆｅ（ｓａｌｅｎ）超微传感器对 ＮＯ的检测有高的灵敏度和好的选择性． ＮＯ的浓度在 ７． ２× １０－８～４． ４× １０－６ ｍｏｌ／Ｌ范围内，氧化电流与浓度呈线性关系；线性相关系数为０．９９９６，检测限达３．６×１０－８ ｍｏｌ／Ｌ；生物体中常见的物质如抗坏血酸、尿酸、儿茶酚胺类代谢产物、ＮＯ的氧化产物ＮＯ－２ 等不干扰测定．所研制的传感器可用于ＮＯ的在体分析．     

Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

AlN epilayers are grown directly on sapphire(0001)substrates each of which has a low temperature AlN nucleation layer.The effects of pretreatments of sapphire substrates,including exposures to NH3/H2and to H2only ambients at different temperatures,before the growth of AlN epilayers is investigated.In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H2only ambient,and are characterized by six 60°-apart peaks with splits in each peak in(10ˉ12)phi scan and two sets of hexagonal diffraction patterns taken along the[0001]zone axis in electron diffraction.These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH3/H2ambient.AlN epilayers by the pretreatment of sapphire substrates in the NH3/H2ambient are Al-polar.Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers.We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire.     

Occurrence and elimination of in-plane misoriented crystals in AIN epUayers on sapphire via pre-treatment control

AlN epilayers are grown directly on sapphire （0001） substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire snbstrates, including exposures to NH3/H2 and to H2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in （1012） phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH3/H2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH3/H2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire.     

RIGHT FOCAL BOUNDARY VALUE PROBLEM WITH SINGULARITY

This article proves existence results for singular problem ( - 1)n-px(n)(t) = f(t,x(t),…,x(n-1)(t)), for 0 < t < l,x(i)(0) = 0,i = 1,2.…,p - l,x(i)(1) = 0,i = p,p 1,…, n - 1. Here the positive Carathedory function f may be singular at the zero value of all its phase variables. The interesting point is that the degrees of some variables in the nonlinear term f(t,x0,x1,…,xn-1) are allowable to be greater than 1. Proofs are based on the Leray-Schauder degree theory and Vitali's convergence theorem. The emphasis in this article is that f depends on all higher-order derivatives. Examples are given to illustrate the main results of this article.