Generalized Rule Induction Based on Immune Algorithm

A generalized rule induction mechanism, immune algorithm, for knowledge bases is building an inheritance hierarchy of classes based on the content of their knowledge objects. This hierarchy facilitates group-related processing tasks such as answering set queries, discriminating between objects, finding similarities among objects, etc. Building this hierarchy is a difficult task for knowledge engineers. Conceptual induction may be used to automate or assist engineers in the creation of such a classification structure. This paper introduces a new conceptual rule induction method, which addresses the problem of clustering large amounts of structured objects. The conditions under which the method is applicable are discussed.     

线性菲涅耳聚光系统柱面反射镜的优化与聚光特性

线性菲涅耳聚光系统采用柱面反射镜可提高聚光能力。本文提出一种柱面反射镜曲率半径的优化计算方法,建立了通用计算模型,详细分析了反射光线横向偏移的变化规律、系统瞬时光学效率和能流均匀性等。研究结果表明,柱面反射镜的最佳曲率半径与其宽度几乎没有关联,只需要考虑其与镜场中心的距离和系统有效工作时太阳横向入射角即可得到最佳值。通用计算模型所得的结果与数值精确计算的结果非常接近,最大偏差为1.26%,平均偏差为0.38%。在考虑柱面反射镜型面误差、跟踪误差和曲率半径误差的情况下,当横向入射角大于45°时,系统瞬时光学效率保持在59.46%以上。在聚焦平面的较小范围（相对距离为-0.05～0.05）内,能流密度高且均匀性较好,适合布置光伏电池组件。     

正电子冲击下氦电离三重微分截面的理论计算

我们发展了一种正电子碰撞原子电离的畸变波Born近似方法, 在这个方法中,正负电子偶素通道通过一个ab initio的光学势附加到入射粒子和靶的相互作用势上,且通道对电离作用被第一次被考虑在正电子碰撞原子电离的过程中. 应用这个方法计算了在50 eV入射能量范围氦的电离的三重微分截面,计算结果和实验数据很好的符合.     

Micro-vibrating spatial filters-induced beam positioning stability in large laser system

A dynamic beam propagation model of micro-vibrating spatial filters in inertial confinement fusion(ICF) facilities is built based on the additional beam in SG-II facility.The transfer matrix is then deduced,and the sensitivities of the beam positioning to the pellet in the target area to the vibrations of every spatial filter are analyzed,which indicates that the vibrations of spatial filters in the pre-amplify zone has less effects on beam positioning stability at the target.In addition,the vibrations of spatial filters in the main amplify zone dominates the beam positioning stability of the target,especially the vibration of the spatial filter SF7.     

六面顶压机高压腔体温度场的数值模拟

 以有限元法为分析手段,在模型和边界条件适当简化的条件下,对六面顶压机高压腔体的温度场进行了数值模拟计算,得出了腔体内的温度分布。在此基础上通过调整模型参数,定性讨论了样品组装设计中组装材料、加热器形状以及导电金属环厚度对温度场的影响。数值模拟结果表明：用氧化锆替代叶蜡石作为堵头和保温材料可以提高样品区的温度,降低功率的消耗并减小样品区的温度梯度;与圆筒形加热器组装相比,中间厚两端薄的变圆筒形加热器组装能提供更高的样品中心温度和较小的温度梯度;使用导电金属环的加热组装时,适当增加金属环的厚度有利于获得较理想的温度分布。研究结果对优化高压实验的样品组装设计、改善温度梯度及保护设备具有一定的参考价值。     

单核子在具有八极形变的平均势场中的混沌运动(Ⅱ)初始相干态空时演化中正则变量的期望值和测不准度的特征

研究了二维不对称谐振子的相干态在附加八极形变势作用下传播时,量子正则变量的期望值和测不准度的变化,发现量子混沌与相应的经典混沌完全对应地表现了多种性质.量子混沌的特征也与势能面的几何对称性,即势能面上负曲率的存在及负曲率的大小有关系.     

可积系统棗求迹公式和h逆谱分析

研究了二维无关联四次振子系统,有理环面上积分Hamiltonian运动方程给出了系统一系列周期轨道和经典物理量,使用半经典近似下的Berry-Tabor求迹公式,得到了半经典的态密度．应用Fourier变换分析了每条周期轨道对态密度的贡献,并与量子态密度的Fourier变换结果比较证实了半经典求迹公式的有效性．     

混沌原子核系统的相干态描述

当前，人们对量子混沌系统的能谱统计性质的了解比对其波函数性质的了解多得多．通过研究哈密顿系统初始状态为相干量子状态时的传播性质、位置与动量的平均值随时间的演化及涨落的变化性质，将给出系统波函数及相空间分布的信息，并自然给出量子、经典的对应．从理论形式上给出了哈密顿系统状态的相干态表示． So far the statistical fluctuation property of the energy spectrum and its rigidity for quantum chaotic systems are known much more than the wave functions. The study of the propagating property of a quantum state of a Hamiltonian system with its initial state being a coherent state, the time evolution of the mean position and mean momentum, as well as the variation of the position and momentum fluctuation of the system will offer information about the wave function and the phase...     

单核子在具有八极形变的平均势场中的混沌运动(I)相干态在势场中传播的理论表示

单核子在具有八极以上形变的平均势场中发现有混沌运动.通过研究系统非定态波函数的时间演化特征,而使研究量子混沌与研究经典混沌的思路更趋一致,特别是能体现量子状态对初始条件的敏感性.给出了当初态选为二维不对称谐振子动力学对称条件下的、满足坐标动量最小测不准关系的相干态时,八极形变耦合作用下量子状态正则变量的期望值及测不准度随时间演化的理论表示.     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.