Landau-Ginzburg-Higgs方程的微扰理论

求出了一阶和二阶近似下微扰对Landau-Ginzburg-Higgs方程孤子解的影响，即求出了孤子参数随时间的缓慢变化关系及解的一阶修正和二阶修正的具体表达式. 关键词： Landau-Ginzburg-Higgs方程 孤子 微扰     

MOVING NONLINEAR LOCALIZED MODES FOR ONE-DIMENSIONAL KLEIN－GORDON DIATOMIC LATTICE

We study analytically the moving nonlinear localized vibrational modes (discrete breathers) for a one-dimensional Klein－Gordon diatomic lattice in the whole ω(q) plane of the system by means of a semi- discrete approximation, in which the carrier wave of the modes is treated explicitly while the envelope is described in the continuum approximation. We find that both pulse and kink envelope moving modes for this lattice system can occur with certain carrier wave vectors and vibrational frequencies in separate regions of the ω(q) plane. However, the kink envelope moving modes have not been reported previously for this lattice system.     

A certain critical two-soliton solution of the nonlinear Schroedinger equation

An exact two-soliton solution of the nonlinear Schroedinger equation is derived by using the Hirota direct approach. This solution describes such a critical process that two still solitons separated infinitely approach and then pass through each other and keep straight on infinitely.     

TDGL方程的微扰理论

在一阶近似下,获得了微扰对TDGL(TimeDependentGinzburgLandau)方程的静态孤子解的影响,即求得了孤子参数随时间慢变量的变化情况和一阶修正的一般表达式,以及一个特例的具体表式 关键词： 静态孤子 孤子微扰论     

均匀电场中电介质椭球与电介质极化

均匀电场中电介质椭球与电介质极化潘留仙，徐勇，黄瑞霖（湖南益阳师专）（西南交通大学成都）１引言均匀电介质处于匀强电场凡中时，电介质被极化，其介质表面出现束缚的极化电荷。这—些束缚电荷和自由电荷一样，在其周围空间产生一个附加场。这时空间任一点的场强为对...     

非晶材料弛豫过程中杨氏模量的唯象研究

从晶态材料弛豫过程中模量的唯象描述的基本思想出发,同时考虑到近年来对非晶材料弛豫规律的种种研究,将传统的构造力学参数模型作为弛豫单元的作法与现在流行的双能级模型统一起来,对非晶材料弛豫过程中的杨氏模量进行了唯象处理,得到了与以往不同的弛豫规律.     

影响干涉条纹可见度的几个主要因素

影响干涉条纹可见度的几个主要因素潘留仙，徐勇（湖南益阳师专）（西南交通大学成都）两个或两个以上光波场在空间相遇后是否能产生干涉？干涉程度如何？通常最直观判别的办法就是考察它们相遇后有无干涉条纹和干涉条纹的清晰程度。由于干涉条纹的清晰程度直接反映了光波...     

A DIRECT APPROACH TO THE SOLITON PERTURBATION FOR KdV-MKdV EQUATION

The authors develop a direct approach to the soliton perturbation based on theseparation of variables. With the aid of approach, the first-order effects of perturbation ona KdV-MKdV soliton are derived, both the slow time-dependence of the soliton parametersand the first-order correction are obtained.     

InAs/GaAs单电子量子点量子比特的失相率

在有效质量包络函数理论近似下, 计算了InAs/GaAs量子点的参数相图，确切定义了InAs/GaAs量子点的参数的范围,使得该量子点能作为二能级量子系统用于量子计算；发现静电场能够有效延长消相干时间，当外加静电场超过20 kV/cm时，消相干时间能够达到毫秒量级. 这些结果有助于未来实现固态量子计算.