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Tom i
ica Yaraslava Milasheuskaya Zdeka Ri
kov Petr Nmec Pavel vanda Zuzana Olmrov Zmrhalov Roman Jambor Marek Bouka 《化学:亚洲杂志》2019,14(23):4229-4235
Utilization of the N,C,N‐chelating ligand L (L={2,6‐(Me2NCH2)2C6H3}?) in the chemistry of 13 group elements provided either N→In coordinated monomeric chalcogenides LIn(μ‐E4) (E=S, Se) with unprecedented InE4 inorganic ring or monomeric chalcogenolates LM(EPh)2 (M=Ga, In). Complex LGa(SePh)2 was selected as the most suitable single source precursor (SSP) for the deposition of amorphous semiconducting GaSe thin films using spin coating method. 相似文献
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