Dynamics of Si-H vibrations in an amorphous environment

We present results of the first vibrational photon-echo, transient-grating, and temperature dependent transient-bleaching experiments on a-Si:H. Using these techniques, and the infrared light of a free electron laser, the vibrational population decay and phase relaxation of the Si-H stretching mode were investigated. Careful analysis of the data indicates that the vibrational energy relaxes directly into Si-H bending modes and Si phonons, with a distribution of rates determined by the amorphous host. Conversely, the pure dephasing appears to be single exponential, and can be modeled by dephasing via two-phonon interactions.     

Tailoring the charge carrier dynamics in ZnO nanowires: the role of surface hole/electron traps

Post-fabrication thermal-annealed ZnO nanowires (NWs) in an oxidizing (or a reducing) ambient were investigated using transient photoluminescence and X-ray photoelectron spectroscopy. Our findings reveal an ultrafast hole-transfer process to the surface adsorbed oxygen species (e.g., O(2)(-)) occurring within a few hundred picoseconds (ps) in the air-annealed samples; and an ultrafast electron-transfer process to charged oxygen vacancies (i.e., V(O)(2+)) occurring within tens of ps in the H(2)-annealed samples. Contrary to the common perception that the band edge emission (BE) dynamics are strongly influenced by the carrier trapping to the green emission related defect states (i.e., V(Zn)), these above processes compete effectively with the ZnO BE. Hole trapping by ionized V(Zn), which occurs in an ultrashort sub-ps-to-ps timescale (and hence limits its effective hole capture radius), however, has less influence on the BE dynamics. Importantly, our findings shed new light on the photoinduced charge transfer processes that underpins the novel properties of enhanced photocatalytic activity, photovoltaic performance, and photoconductivity response of ZnO NWs, thereby suggesting a strategy for tailoring the ultrafast carrier dynamics in ZnO NW-based devices.