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Estimates have been made of Fe2+ term splittings in axial crystalline fields. It is found that all three long-wave bands in the optical spectrum are due to Fe2+ Fe3+ charge transfer, while the splitting of 5T2g and 5Eg occurs in low-symmetry fields. Experimental evidence is presented for these calculations.Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 23, No. 4, pp. 464–468, July–August 1987. 相似文献
2.
A. N. Pustovit 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2010,4(5):784-787
The possibility of analyzing the structure of nanometer-sized silicon layers doped with boron and antimony (at a concentration
level of 10−2–10−3 at %) via secondary-ion mass spectrometry (SIMS) is investigated. A recoil-atom implantation process has been evaluated from
the standpoint of its contribution into the total recorded signal of secondary ions of impurities. It is demonstrated that
SIMS can be used for qualitative determination of the structure formed in doped δ-layers. 相似文献
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The normal vibrations of εg and τ2g symmetry are shown to reduce the Oh symmetry to Ci. The position and depth of the adiabatic potential minima strongly depend upon the ratio of vibronic and spin—orbin interactions. 相似文献
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A. N. Pustovit 《Bulletin of the Russian Academy of Sciences: Physics》2018,82(2):145-149
The dependences of the coefficient of self-sputtering on the type of accelerated ions, their energy, and the angle of incidence on a target are calculated. Satisfactory coincidence between the calculated and experimental results is obtained for С–С and W–W systems. Two mechanisms of the entry of secondary particles into a flow of sputtered atoms are proposed. 相似文献
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A. N. Pustovit A. F. Vyatkin 《Bulletin of the Russian Academy of Sciences: Physics》2012,76(9):983-986
A method for improving SIMS depth profiling by recording secondary molecular ions is proposed. Experimental studies of SiGe and AlGaAs nanometer-scale test structures, and of boron-doped Si with an energy of 5 keV showed improved secondary-ion mass spectroscopy depth resolution when recording secondary molecular ions. A physical model that considers the molecular ion dissociation energy to be a decisive parameter is discussed. 相似文献
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A. N. Pustovit 《Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques》2013,7(1):168-171
The distribution profiles of primary ion beams of electroactive atoms (cesium and oxygen) in silicon samples have been investigated experimentally. It is demonstrated that the initial chemical composition of a sample is modified due to the implantation of primary ions at depths of up to 5 nm from its surface. A mechanism responsible for the enhancement of the secondary-ion yield during target sputtering by the chemically active elements has been proposed. 相似文献
10.
A. N. Pustovit 《Bulletin of the Russian Academy of Sciences: Physics》2010,74(2):165-169
The stopping of medium atomic elements in solids has been calculated in the framework of classical approximation, taking into
account elastic and inelastic collisions. The calculations are based on the 1) revised equations for the law of energy and
impulse conservation, which were earlier used to describe inelastic collisions of atomic particles, 2) theory of quasi-small
angle scattering, 3) power potential of LNS, and 4) limitation of the maximum distance of atoms approach determined by the
interatomic distance in solids. Analytical equations have been obtained to calculate 1) a differential cross-section of elastic
scattering in the presence of inelastic collisions, 2) energy transferred, 3) cross-sections of elastic and inelastic stopping,
and penetration depth. Implantation into solids was found to be of threshold character. 相似文献