Lagrangian for the t–J Model Constructed from the Generators of the Supersymmetric Hubbard Algebra

In order to describe the dynamics of the t–J model, two different families of first-order Lagrangians in terms of the generators of the Hubbard algebra are found. Such families correspond to different dynamical second-class constrained systems. The quantization is carried out by using the path-integral formalism. In this context the introduction of proper ghost fields is needed to render the model renormalizable. In each case the standard Feynman diagrammatics is obtained and the renormalized physical quantities are computed and analyzed. In the first case a nonperturbative large-N expansion is considered with the purpose of studying the generalized Hubbard model describing N-fold-degenerate correlated bands. In this case the 1/N correction to the renormalized boson propagator is computed. In the second case the perturbative Lagrangian formalism is developed and it is shown how propagators and vertices can be renormalized to each order. In particular, the renormalized ferromagnetic magnon propagator coming from our formalism is studied in details. As an example the thermal softening of the magnon frequency is computed. The antiferromagnetic case is also analyzed, and the results are confronted with previous one obtained by means of the spin-polaron theories.     

Temperature and field dependences of photo-induced changes in the magnetization in yttrium iron garnet

The changes in the magnetization of yttrium iron garnet (YIG) when irradiated by a pulsed neodymium laser beam with wavelength λ=1.06 μm are investigated. Measurements are performed in the temperature range from 100 K to 600 K in various external magnetic fields. YIG single crystals grown along the crystallographic (100), (110), and (111) directions are chosen so that the external anisotropy of the indicated processes can be determined. Characteristic temperature intervals dominated by different mechanisms of variation of the magnetization under the influence of a laser pulse are discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 1263–1266 (July 1997)     

Boundary-value problem for the nonlinear Schrödinger equation

A mixed boundary-value problem for the nonlinear Schrödinger equation and its generalization is studied by the method used for the inverse scattering problem. A connection is established between conservation laws and boundary conditions in integrable boundary-value problems for higher nonlinear Schrödinger equations. It is shown that the generalized boundary-value problem requires a joint consideration of regular and singular solutions for the nonlinear Schrödinger equation with repulsion.Translated from Zapiski Nauchnykh Seminarov Leningradskogo Otdeleniya Matematicheskogo Instituta im. V. A. Steklova AN SSSR, Vol. 169, pp. 151–165, 1988.     

On decomposition of continuity

Summary The main purpose of this paper is to introduce the concepts of η-sets, ηζ-sets,η-continuity and ηζ-continuity and to obtain a decomposition of continuity.     

Continuum Limit of the Volterra Model, Separation of Variables and Non-Standard Realizations of the Virasoro Poisson Bracket

The classical Volterra model, equipped with the Faddeev-Takhtajan Poisson bracket provides a lattice version of the Virasoro algebra. The Volterra model being integrable, we can express the dynamical variables in terms of the so-called separated variables. Taking the continuum limit of these formulae, we obtain the Virasoro generators written as determinants of infinite matrices, the elements of which are constructed with a set of points lying on an infinite genus Riemann surface. The coordinates of these points are separated variables for an infinite set of Poisson commuting quantities including L ₀. The scaling limit of the eigenvector can also be calculated explicitly, so that the associated Schroedinger equation is in fact exactly solvable.     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.