Dynamics of Spontaneous Electric Field Domains in a Two-Dimensional Electron System Irradiated by Microwaves and the Conductance of a Donor Layer

The temperature dependence of the switching frequency of a microwave-induced spontaneous electric field forming a domain structure and the conductance of a doping layer that provides electrons to the two-dimensional electron system have been measured on samples fabricated from the same GaAs/AlGaAs heterostructure. Both quantities have been found to obey the thermally activated dependence (Arrhenius law) with close activation energies. This result indicates a relation between the quantities and confirms a hypothesis that the observed dynamics of the domain structure originates from the dynamical screening of the spontaneous electric field of domains by charges in the doping layer.     

Effect of anionic surfactant on alginate‐chitosan polyelectrolyte multilayer thickness

Alginate and chitosan are among the most common biopolyelectrolytes. Surfactants can be included in alginate and chitosan formulations in order to improve their physical and functional properties. In the present study, the effect of the anionic surfactant sodium dodecyl sulfate (SDS) on alginate‐chitosan polyelectrolyte multilayer (PEM) films is reported for the first time. Layer‐by‐layer deposition technique was employed to prepare the PEM samples and the samples were characterized by ellipsometry, X‐ray reflectivity, atomic force microscopy, and quartz crystal microbalance with dissipation. Incorporation of SDS into PEM formulations increased the film thickness and an increased adsorption behavior between alginate and chitosan layers are observed. Since the concentration of SDS was below its critical micelle concentration, no micelle formation was expected and hydrophobic‐hydrophobic interaction between alginate and SDS might be the main reason. © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2017 , 55, 1798–1803     

Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors

For the first time Shubnikov-de Haas oscillations have been observed in p-type inversion layers of (111) and (100) silicon field effect transistors. For both orientations a single electric subband was found. The effective mass of the surface carriers was determined from the temperature dependence of the oscillations, for (111) surfaces as a function of the surface electric field. At low gate voltages spin splitting of the Landau levels was resolved.     

Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices

We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.     

Frequency tuning of the whispering-gallery modes of silica microspheres for cavity quantum electrodynamics and spectroscopy

We have tuned the whispering-gallery modes of a fused-silica microresonator over nearly 1 nm at 800 nm, i.e., over half a free spectral range, or 10(6) linewidths of the resonator. This result has been achieved by use of a new method based on the stretching of a two-stem microsphere. We describe devices that will permit new cavity QED experiments with this high- Q optical resonator when it is desirable to optimize its coupling to emitters with given transition frequencies. The demonstrated tuning capability is compatible with both UHV and low-temperature operation, which should be useful for future experiments with laser-cooled atoms or single quantum dots.