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1.
A two‐stage co‐oligomerization of the oligomers initially formed from an equimolar mixture of isophthalic acid (IPA) and terephthalic acid (TPA) and 2,2‐bis(4‐hydroxyphenyl)propane (BPA, 50 mol %) with bisphenols (BPs, 20 mol %) was carried out using a tosyl chloride/dimethylformamide/pyridine condensing agent. The distributions of the resulting oligomers (nx‐mers), which were quenched with methanol, were determined by a combination of gel permeation chromatography (GPC) and NMR. These distributions (presented by molar percentage) were conveniently calculated with the equation nx (mol %) = nx (% mol by GPC) × n0 (mol % by NMR)/n0 (% mol by GPC), where nx (% mol) = nx (wt % by GPC)/its molecular weight. The results showed the distributions of the preformed IPA/TPA‐BPA oligomers to be in fairly good accord with those obtained directly from GPC and to be supported by the NMR results. The calculation was applied to the co‐oligomers prepared up to a reaction of 0.7, at which there was an increase in the number of higher oligomers indivisible by GPC and the distributions could no longer be determined by molar percentage. The calculated distributions are discussed in relation to the results of copolycondensation. The sequence distributions in the resulting co‐oligomers, which were also examined by NMR, are compared with those in the copolymers. © 2003 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 42: 44–51, 2004  相似文献   
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A zeolite NaA (LTA) membrane supported by an alumina porous support tube for pervaporation (PV) dehydration of ethanol was characterized by transmission electron microscopy (TEM) using a focused ion beam (FIB) thin-layer specimen preparation technique and by Fourier transform infrared attenuated total reflectance method (FTIR-ATR) using a diamond prism as the waveguide. FIB-TEM clearly presented cross-section images up to about 15 microm depth from the membrane surface. FTIR-ATR monitored the Si-O asymmetric stretching vibration spectrum. The Si-O spectrum was compared with the TEM image and their relationships were discussed. By combining the two methods, we could study the thickness of surface LTA crystals, the grain boundary, the LTA/alumina interface structure and the crystallinity and density of materials inside of the alumina porous support. Consequently, fine structure changes of the LTA membrane corresponding to the hydrothermal synthesis condition could be sensitively detected.  相似文献   
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The angular dependence of the 27Al NMR spectrum was measured for single crystals of smoky and colorless topaz, Al2SiO4(F,OH)2. Smoky topaz was obtained by irradiating high energy neutrons to colorless topaz. The quadrupole coupling constant e2Qq/h and the asymmetry parameter η were obtained from the analysis of the angular dependences of quadrupole splitting of the 27Al NMR spectrum. The local structures around the aluminum atoms in smoky and colorless topaz were discussed from the magnitude and the direction of the electric field gradient. The directions of principal axes of the EFG tensor of 27Al were close to the directions of Al-O and Al-F bonds. The difference in the bond lengths between Al(1)-F(1) and Al(1)-F(2) was found to affect the x and y components of the EFG tensor.  相似文献   
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Homoepitaxial growth of Au on Bi-covered Au(1 1 1) was studied at room temperature using reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES). From observations of RHEED it is found that the Au(1 1 1) (23 × 1) reconstruction structure changes to a (1 × 1) by about 0.16-0.5 ML deposition of Bi and to a (2√3 × 2√3)R30° by about 1.0 ML deposition of Bi, respectively. The surface morphology evolution by Bi deposition leads to a change of Au homoepitaxial growth behavior from layer-by-layer to step flow. This indicates that the surface diffusion distance of Au atoms on the Bi-precovered (1 × 1) and (2√3 × 2√3)R30° surfaces is longer than that on the Au(1 1 1) (23 × 1) clean surfaces. A strong surface segregation of Bi was found at top of surface. It is concluded that Bi atoms acted as an effective surfactant in the Au homoepitaxial growth by promoting Au intralayer mass transport.  相似文献   
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A persistent hole-burning is observed in β-perylene microcrystallites, which were embedded in poly-vinyl alcohol. By laser light excitation at 22,535 cm−1 and at 10 K, the hole is found at the excitation photon energy. The mechanism of the persistent hole-burning is interpreted in terms of the resolution of microcrystallites into smaller microcrystallites. This is a novel observation of the persistent hole-burning in aromatic microcrystallites. When the specimen, which includes a hole, is annealed at high temperatures, the resolved microcrystallites restore back to the old position as had been. The β-perylene microcrystallite specimen that we have grown was as small as 1.5 nm in average diameter. They are one order smaller in number of molecules included, compared to those that have been reported on aromatic microcrystallites, anthracene for example. Due to this, we were able to observe the 0-0 transition energy, which varied according as the number of molecules involved in the microcrystallites. We also observed the 0-0 absorption (excitation) spectrum, which depends on the molecular arrays in the microcrystallites. The 0-0 transition of a single molecule in poly-vinyl alcohol matrix is anticipated to be located at 22,885 cm−1.  相似文献   
8.
A bent photonic crystal waveguide was fabricated by use of a lattice pattern of a circular photonic crystal that allowed high transmission for a broad band of wavelengths with a small radius of curvature at a bend. The waveguide was fabricated by use of alumina rods with a diameter of 3 mm. Windows of high transmission as a result of waveguiding were observed near 9 and 15 GHz. By measurement of the relative wave intensity [E]2 along the line defects, the propagation losses in the straight and the bent sections were estimated at 9.3 GHz to be 0.04 and 0.03 dB/mm, respectively.  相似文献   
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Polycrystalline (1−x)Ta2O5xTiO2 thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO2 layer was formed at the (1−x)Ta2O5xTiO2/Si interface. Thin films with 0.92Ta2O5–0.08TiO2 composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×1011 cm−2 eV−1, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm2 was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10−9 A/cm2 up to an applied electric field of 6 MV/cm.  相似文献   
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