Preparation and certification of the new reference materials; plastics (disk form, JSAC 0621-0625) for determination of mercury using x-ray fluorescent analysis.

The Japan Society for Analytical Chemistry has developed some new plastic certified reference materials (CRMs) for the analysis of mercury in polyester disks using XRF analysis. These CRMs (named as JSAC 0621-0625) were prepared by casting polyesters including a toluene solution of organometallic compounds as a standard. Concentrations of the five levels of mercury ranged from 0 to 250 mg/kg. Homogeneity tests of prepared disks had shown excellent results. Interlaboratory comparison study for the certification was performed by 15 laboratory participants. The z-scores in robust statistical method was applied for the evaluation of outliers. The certified values were assigned after discarding outliers. The uncertainties of certified values were determined as the confidence levels of 95%.     

Self-crosslinkable polymers. I. Copolymerization of glycidyl methacrylate with 2-vinylpyridine and 2-vinyl-5-ethylpyridine

A soluble and self-crosslinkable linear copolymer with pendant epoxy and pyridyl groups was obtained from glycidyl methacrylate (M₁) and 2-vinylpyridine (M₂) or 2-vinyl-5-ethylpyridine (M₂) by the action of azobisisobutyronitrile. The monomer reactivity ratios were determined in tetrahydrofuran at 60°C: r₁ = 0.510, r₂ = 0.620 with 2-vinylpyridine and r₁ = 0.57, r₂ = 0.62 with 2-vinyl-5-ethylpyridine. These were consistent with the calculated values with the reported Q and e values for these monomers. The intrinsic viscosities of the copolymers with 2-vinylpyridine and with 2-vinyl-5-ethylpyridine were found to be 0.17–0.19 and 0.26–0.38, respectively, in tetrahydrofuran at 30°C; they were independent of the copolymer composition. The copolymers were amorphous, had no clear melting points, and became insoluble crosslinked polymers under heating without further addition of any curing agents.     

Field evaporation of silicon surfaces

Quantitative measurements on field evaporation of Si(111) surfaces in hydrogen imaging gas have been carried out by field ion microscopy. The field evaporation rate is found to increase exponentially with increase of the reciprocal of tip temperature in the range 80–103 K. The evaporation field strength increases with increase of tip temperature in the investigated range, 80–300 K. Within the applied pressure range, 5× 10^?6 to 2 × 10^?4 Torr of hydrogen gas, the evaporation rate linearly increases with the gas pressure. Similar effects of temperature and gas pressure on field evaporation of Si(111) surfaces have been observed also in silane imaging gas. A model, based on a field-induced formation of surface hydrides as a rate-determining step, is proposed, which accounts for all the experimental results of the field evaporation process.     

Laser-induced forward transfer technique for maskless patterning of amorphous V2O5 thin film

A laser-induced forward transfer technique has been applied for the maskless patterning of amorphous V₂O₅ thin films. A sheet beam of a frequency doubled (SHG) Q-switched Nd:YAG laser was irradiated on a transparent glass substrate (donor), the rear surface of which was pre-coated with a vacuum-deposited V₂O₅ 180 nm thick film was either in direct contact with a second glass substrate (receiver) or a 0.14 mm air-gap was maintained between the donor film and the receiving substrate. Clear, regular stripe pattern of the laser-induced transferred film was obtained on the receiver. The pattern was characterized using X-ray diffraction (XRD), optical absorption spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), atomic force microscopy (AFM), etc.     

Charge density study under high pressure

The experimental and analytical method of the high-pressure powder experiment at BL10XU, SPring-8, is described. There is no doubt that BL10XU must be one of the most appropriate beam lines for high pressure X-ray diffraction experiment taking advantage of third generation synchrotron source. As an example of the advanced charge density study under high pressure, the structural change of Cs₂Au₂Br₆ by applying pressure is studied by Rietveld/MEM analysis. It reveals that the structural change of Cs₂Au₂Br₆ by applying pressure occurs basically at electron level, such as valence state change and chemical bonding, which may be called the electronic phase transition.     

Multiple Coulomb excitation of a 70Ge beam and the interpretation of the 02 + state as a deformed intruder

Electromagnetic properties of the low-lying states in a ⁷⁰Ge nucleus were studied through the multiple Coulomb excitation of a ⁷⁰Ge beam with a ^natPb target. Relative γ-ray intensities were measured as a function of emission angle relative to the scattered projectile. Sixteen E2 matrix elements, including diagonal ones, for 6 low-lying states have been determined using the least-squares search code GOSIA. The expectation values 〈Q ²〉 of 0₁ ⁺ and 0₂ ⁺ states in ⁷⁰Ge are compared with those in ^{72, 74, 76}Ge. Simple mixing calculations indicate that the 0₂ ⁺ states in ⁷⁰Ge and ⁷²Se can be treated as deformed intruder states. It is shown that the deformed intruder becomes the ground state in ⁷⁴Kr. These interpretations of the 0₂ ⁺ states in this region are compared with the potential-energy surface calculations by the Nilsson-Strutinsky model, which allow to interpret the experimental results in a qualitative way from the theoretical point of view. Received: 2 September 2002 / Accepted: 5 November 2002 / Published online: 25 February 2003 RID="a" ID="a"e-mail: sugawara@pf.it-chiba.ac.jp Communicated by D. Schwalm     

Effects on spontaneous emission on dynamic characteristics of semiconductor lasers

Dynamic characteristics of semiconductor lasers are calculated with single-mode rate equations, taking into account spontaneous emission factor β and bias current