A study of molecular one-electron properties in terms of localized molecular orbital components

A number of molecular one-electron progperties have been analyzed by partitioning their electronic components over energy localized molecular orbitals (LMO ). The ammonia and ethane molecules, calculated in an Approximately double zeta qualtiy basis set, were considered. The partitioning of the electronic components of certain one-electron properteies over LMO allows a quantitative rationalization of the sensitivity of certain properties to basis set effects due to the differeing degree of difficulty of accurately determining different LMO as measures of the molecular electron density.     

The role of kinetic energy in chemical binding

The wavefunctions and various partitions of the energy are examined for a variety of small molecules (H₂, H₃, H₄, HeH, HeH₂, He₂, LiH, and BH) in order to isolate the factors crucial for bond formation. We find that a natural partition of the energy leads to the conclusion that the crucial factor is the exchange, or nonclassical, part of the kinetic energy, T ^x. The change in T ^xupon pushing the atoms towards one another is the dominant term in the binding energy; it is negative when the resulting molecule is stable and positive when it is unstable. We show that T ^x is related to the interference kinetic energy considered by Ruedenberg.

---

Zusammenfassung Die Wellenfunktionen und verschiedene Zerlegungen der Energie werden für eine Reihe kleiner Moleküle untersucht (H₂, H₃, H₄, HeH, HeH₂, He₂, LiH und BH), um die Faktoren zu finden, die für die Bindungsbildung ausschlaggebend sind. Die natürliche Zerlegung der Energie läßt die Folgerung zu, daß der bestimmende Faktor der Austauschanteil T ^x(oder nichtklassische Anteil) der kinetischen Energie ist. Die Änderung von T ^xbeim Zusammenführen der Atome ist der dominierende Term für die Bindungsenergie; er ist negativ, wenn das resultierende Molekül stabil ist, und positiv, falls es instabil ist. Es wird gezeigt, daß T ^x im Zusammenhang zum Wechselwirkungsanteil der kinetischen Energie nach Ruedenberg steht.

---

---

Partially supported by a grant (GP-15423) from the National Science Foundation. This paper is based on a portion of the PhD thesis (California Institute of Technology, 1970) by CWW.

---

National Science Foundation Predoctoral Trainee.

---

Alfred P. Sloan Foundation Research Fellow.

---

Contribution No. 3917.     

UV-ENHANCED REACTIVATION IN MAMMALIAN CELLS: INCREASE BY CAFFEINE

Abstract— It has been reported that caffeine decreases UV-enhanced reactivation of UV-irradiated Herpes simplex virus in CV-1 monkey kidney cells. That occurred when there was no delay between cell irradiation and virus infection. In the present study, virus infection was delayed following cell irradiation to allow an 'induction'period separate from the 'expression'period which occurs during the virus infection. Thus, the effects of caffeine on 'induction'and 'expression'could be determined separately. Caffeine increased the expression of UV-enhanced reactivation, while causing a small decrease in the 'induction'of enhanced reactivation.     

Theoretical studies of the bonding of sulfur to models of the (100) surface of nickel

Electronic wavefunctions have been obtained as a function of geometry for a S atom bonded to Ni clusters consisting of 1 to 4 atoms designed to model bonding to the Ni(100) surface. Electron correlation effects were included using the generalized valence bond and configuration interaction methods. Modeling the (100) surface with four Ni atoms, we find the optimum S position to be 1.33 Å above the surface, in good agreement with the value (1.30 ± 0.10 Å) from dynamic LEED intensity calculations. The bonding is qualitatively like that in H₂S with two covalent bonds to one diagonal pair of Ni atoms. There is a S pπ pair overlapping the other diagonal pair of Ni atoms. [Deleting this pair the S moves in to a position 1.04 Å from the surface.] There are two equivalent such structures, the resonance leading to equivalent S atoms and a c(2 × 2) structure for the S overlayer. The Ni in the layer beneath the surface seems to have little effect (~0.03 Å) on the calculated geometry. Bonding the S directly above a single Ni atom leads to a much weaker bond (D_e = 3.32 eV) than does bonding in a bridge position (D_e = 5.37 eV).     

Threshold crack speed controls dynamical fracture of silicon single crystals

Fracture experiments of single silicon crystals reveal that after the critical fracture load is reached, the crack speed jumps from zero to approximately 2 km/sec, indicating that crack motion at lower speeds is forbidden. This contradicts classical continuum fracture theories predicting a continuously increasing crack speed with increasing load. Here we show that this threshold crack speed may be due to a localized phase transformation of the silicon lattice from 6-membered rings to a 5-7 double ring at the crack tip.