Benzthiazolderivate, 5. Mitt.: Dequartärisierung und nucleophile Substitution von Benzthiazoliumsalzen

Zusammenfassung Benzthiazoliumsalze (I) reagieren, wie an 20 Beispielen gezeigt wird, mit nucleophilen Partnern unter gleichzeitiger Labilisierung des Oniumsystems zu 2-substituierten 2,3-Dihydro-benzthiazolen (dequartärisierende nucleophile Substitution). Der Reaktionsverlauf wird von der Art der nucleophilen Komponente bestimmt: Freie Amino-(Hydrazino)-Verbindungen und I lassen sich im Molverhältnis 21, die Alkalisalze von Aminocarbonsäuren und-sulfosäuren im Molverhältnis 11 umsetzen. Verbindungen mit reaktiver Methylengruppierung reagieren glatt mit der äquivalenten Menge I, wenn in Gegenwart einer Base gearbeitet wird. Die verwendeten I-Verbindungen sind: 2-Äthoxy-3-methyl-benzthiazolium-tetrafluoroborat (VII) und 2-Methylmercapto-3-methylbenzthiazolium-methylsulfat (VIII).     

Sharp bounds on the number of scattering poles for perturbations of the Laplacian

Sharp bounds on the numberN(r) of the scattering poles in the disc |z|r for a large class of compactly supported perturbations (not necessarily selfadjoint) of the Laplacian in ⁿ ,n3, odd, are obtained. In particular, in the elliptic case the estimateN(r)Cr ⁿ+C is proved.Partially supported by Bulgarian Scientific Fondation under grant no. MM8/91     

Assemblies from metallic and semiconducting nanocrystals

Optical properties of nanomaterials such as semiconductor and metal quantum dots are important for sensors and photovoltaic applications. We report on optical, microscopic, and AFM investigations on bulk and single nanoobjects such as metal and semiconducting nanoparticles. Firstly, of special interest is the investigation of Ag metal nanoaggregates formed in zeolites. Here, the defined structure of the zeolite serves both as size directing and a stabilizing agent. The size selected Ag aggregates fluoresce in the zeolite cages even after storage under ambient conditions for almost one year. In addition, single Ag particles escape the cages and can be investigated by fluorescence microscopy also with respect to sensor applications. Secondly, with respect to photovoltaic applications, energy transfer among organic dye molecules and semiconductor quantum dots is of great importance. We report on the extension of the optical absorption of ZnSe quantum dots into the UV regime and investigate excitation energy transfer within self-assembled nanoaggregates of surface functionalized QDs and fluorescent styrylpyridine dyes.     

A study of fused silica micro/nano patterning by focused-ion-beam

A dual-beam scanning electron microscopy (SEM)/focused-ion-beam (FIB) system was used to pattern fused silica substrates coated with a 15 nm thin Cr layer. The dimensions of fabricated features together with their surface morphology and profiles were investigated by SEM and atomic force microscopy (AFM). The study demonstrated that with the increase of the ion beam fluence the sputtering rate of the fused silica decreased non-linearly. Also, it was found that initially the sputtering rate increased with the increase of the beam current, after reaching a maximum value, it started decreasing when further beam current increment was performed. Compared with unprocessed areas, the surface finish of the features fabricated by FIB exhibited a significant improvement, and the ion fluence influence on the surface roughness of trenches with low aspect ratios could be considered as negligible. Using a fine beam probe, nano-gratings in the form of grooves with a width down to 54 nm and an aspect ratio higher than three were fabricated. The study showed that FIB machining could be an alternative technology to e-beam lithography for producing fused silica templates for UV nanoimprinting.     

Patterning of amorphous and polycrystalline Ni78B14Si8 with a focused-ion-beam

The machining response of amorphous and crystalline Ni₇₈B₁₄Si₈ was investigated when structuring substrates using focused-ion-beam (FIB) milling. In particular, the sputtering yield as a function of the scan speed, and the effects of ion fluence and scan speed on the milled depth were studied. The ion fluence dependent evolution of the cross-sectional profiles of trenches was examined by atomic force microscopy (AFM). When milling amorphous Ni₇₈B₁₄Si₈, it was found that the sputtering yield first decreased with increasing the beam scan speed, then kept constant within the scan speed range, up to 710 nm/s, investigated in this work; it was also found that the milled depth was almost proportional to the ion beam fluence. The patterning of polycrystalline Ni₇₈B₁₄Si₈ resulted in anisotropic milling-rates due to the varying orientation of the grains in the material. The analysis of the profile evolution in both materials indicated that the surface finish of trenches was scan speed, ion beam fluence and scan strategy dependent. The study demonstrated that direct patterning by FIB could be used for producing masters in amorphous Ni-based alloys for injection moulding and hot embossing.     

Optical and photoelectric properties of pure and cadmium-and lead-doped neodymium sesquisulfide thin films

A technique for preparing γ-Nd₂S₃ crystalline thin films through discrete vacuum thermal evaporation of a presynthesized bulk material is developed. The films deposited are doped with cadmium and lead. The reflectance and transmittance spectra of the films are measured in the photon energy range 0.2–3.0 eV at a temperature of 300 K. The frequency analysis of the absorption coefficient demonstrates that the γ-Nd₂S₃ films are characterized by an exponential absorption edge. The photoconductivity spectra and temperature dependences of the photoconductivity for the γ-Nd₂S₃ films doped with cadmium and lead are measured in the photon energy range 0.2–3.3 eV at temperatures varying from 115 to 380 K. The experimental data obtained are interpreted under the assumption that the acceptor levels formed by vacancies in the cation sublattice and compensated for by cadmium and lead donor dopants play a crucial role in the photoconduction. The ionization energy at the lead donor level is determined.