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1.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems. 相似文献
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Summary The radial evolution of Alfvénic correlation is such that its value decreases with increasing heliocentric distance. So far
this behaviour has been interpreted as an increase in the local production of ?inward? modes interacting destructively with
the ?outward? modes. This work, which deals with largescale turbulence, shows that local generation phenomena are not commonly
found in the solar wind and that the Alfvénic character of the fluctuations mainly depend on the ?outward? modes alone. The
interaction of these modes with density and/or magnetic-field structures convected by the wind causes their destruction and
a consequent depletion of the Alfvénic correlation. The same effect would be obtained if ?inward? modes were really present.
Our conclusions are that large-scale ?inward? modes are the spectral counterpart of non-propagating field and plasma structures
convected by the solar wind and identified as both compression regions and pressure balance structures.
Paper presented at the V Cosmic Physics National Conference, S. Miniato, November 27–30, 1990. 相似文献
4.
Bruno Zimmermann 《Monatshefte für Mathematik》2002,135(3):253-258
We give a list including all finite groups G which admit smooth orientation preserving actions on homology 3-spheres (arbitrary actions, i.e. possibly with fixed points;
if the action is free then the group G has periodic cohomology and the classification of such groups is well known). The main work in this direction is due to M.
Reni. In the present paper, we complete and extend his results for the case of nonsolvable groups G.
Received 19 March 2001; in revised form 15 September 2001 相似文献
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The performances of two Laser Doppler Velocimetry (LDV) systems adapted for measuring the acoustic particle velocities are assessed in enclosed sound field. This assessment is performed by comparing the acoustic velocities measured by means of LDV to reference acoustic velocities estimated from sound pressure measurements. The two LDV systems are based on a single optical bench which delivers an optical signal called Doppler signal. The Doppler signal, which is frequency modulated, is analyzed by means of two signal processing systems, the BSA (Burst Spectrum Analyser from Dantec) on the one hand, and a system specifically developed for the estimation of the acoustic velocity on the other hand. Once the experimental setup has been optimized for minimizing the errors made on the reference velocities, the assessment is performed and shows that both systems can measure the acoustic velocity in enclosed field in two the frequency ranges [0-4 kHz] and [0-2 kHz] respectively for acoustic velocity amplitudes of 10 mm/s and 1 mm/s. 相似文献
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Bassan Bruno Gossner Olivier Scarsini Marco Zamir Shmuel 《International Journal of Game Theory》2003,32(1):17-31
We exhibit a general class of interactive decision situations in which all the agents benefit from more information. This class includes as a special case the classical comparison of statistical experiments à la Blackwell.
AMS 2000 Subject Classification:Primary 91A35.The work of Bruno Bassan and Marco Scarsini was partially supported by MIUR-COFIN. The authors express their thanks to Sylvain Sorin for enlightening comments. 相似文献
9.
The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved. 相似文献
10.
Giovanni Bruno Maria M. Giangregorio April S. Brown Soojeong Choi 《Applied Surface Science》2006,253(1):219-223
GaN is grown on Si-face 4H-SiC(0 0 0 1) substrates using remote plasma-assisted methods including metalorganic chemical vapour deposition (RP-MOCVD) and molecular beam epitaxy (MBE). Real time spectroscopic ellipsometry is used for monitoring all the steps of substrate pre-treatments and the heteroepitaxial growth of GaN on SiC. Our characterization emphasis is on understanding the nucleation mechanism and the GaN growth mode, which depend on the SiC surface preparation. 相似文献