量子点单光子源的光纤耦合

半导体量子点在低温下产生谱线细锐的激子发光可制备单光子源.光纤耦合可避免低温共聚焦装置扫描定位和振动影响,是实现单光子源即插即用和组件化的关键技术.在耦合工艺上,基于微区定位标记发展出拉锥光纤与光子晶体腔或波导侧向耦合、大数值孔径锥形端面光纤与量子点样片垂直耦合等技术;然而,上述工艺需要多维度精密调节以避免柔软光纤的畸形弯曲实现对准和高效耦合.陶瓷插针或石英V槽封装的光纤无弯曲且具有大平滑端面,只要与单量子点样片对准贴合就可保证垂直收光, V槽封装的排式光纤还可通过盲对粘合避免扫描对准,耦合简单.本文在前期排式光纤粘合少对数分布Bragg反射镜(distributed Bragg reflector, DBR)微柱样片实现单光子输出基础上,经理论模拟采用多对数DBR腔提升样片垂直出光和光纤收光效率,使光纤输出单光子计数率大大提升.     

Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of In_xGa_(1-x)As/In_(0.52)Al_(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In_xGa_(1-x)As/In_(0.52)Al_(0.48)As 2DEG channel structures with mobilities as high as 10289 cm~2/V·s(300 K)and42040 cm~2/V·s(77 K)are obtained,and the values of carrier concentration(Nc)are 3.465×10~(12)/cm~2and 2.502×10~(12)/cm~2,respectively.The THz response rates of In P-based high electron mobility transistor(HEMT)structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.     

碱金属盐催化1,2,4-三唑与α,β-不饱和酮及二酰亚胺的氮杂Michael反应（英文）

发展了一种高效的碱金属盐催化1,2,4-三唑与α,β-不饱和酮及α,β-不饱和二酰亚胺的氮杂Michael加成反应的新方法,以中等到优异的产率得到目标产物.该方法原料易得,底物普适性好,反应条件温和,易实现克级规模的制备.产物容易转化为相应的γ-氨基醇.     

碱金属盐催化1,2,4-三唑与α,β-不饱和酮及二酰亚胺的氮杂Michael反应

发展了一种高效的碱金属盐催化1,2,4-三唑与α,β-不饱和酮及α,β-不饱和二酰亚胺的氮杂Michael加成反应的新方法,以中等到优异的产率得到目标产物.该方法原料易得,底物普适性好,反应条件温和,易实现克级规模的制备.产物容易转化为相应的γ-氨基醇.     

Quantum frequency down-conversion of single photons at 1552 nm from single InAs quantum dot

Near-infrared single photon sources in telecommunication bands, especially at 1550 nm, are required for long-distance quantum communication. Here a down-conversion quantum interface is implemented, where the single photons emitted from single In As quantum dot at 864 nm is down converted to 1552 nm by using a fiber-coupled periodically poled lithium niobate(PPLN) waveguide and a 1.95 μmm pump laser, and the frequency conversion efficiency is ~40%. The singlephoton purity of quantum dot emission is preserved during the down-conversion process, i.e., g~((2))(0), only 0.22 at 1552 nm.This present technique advances the Ⅲ-Ⅴ semiconductor quantum dots as a promising platform for long-distance quantum communication.     

Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure(MLHS) terahertz photoconductive antenna(PCA)at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAlAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAlAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.     

碳酸铯催化吡唑与α,β-不饱和酮的氮杂Michael反应

发展了一种碳酸铯催化吡唑与α,β-不饱和酮的氮杂Michael反应新方法.在5 mol%Cs2CO3存在下,于1,4-二氧六环中回流反应7~12 h,以86%~95%的产率得到21种β-(N1-吡唑基)酮.此法对芳香类和脂肪类α,β-不饱和酮均适用良好,易实现克级放大.产物可容易地转化为相应的γ-氨基醇.发展的方法同样适用于吡唑与丙烯酸甲酯和硝基苯乙烯的氮杂Michael反应.     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.     

香鱼自然放养试验

2002~2003年,在浙江省平阳县岭根溪流进行了香鱼自然放养试验.2002年放养香鱼鱼苗3.5×104尾,回捕率为21.4%,回捕香鱼平均尾重35 g,最大个体150 g;2003年放养香鱼鱼苗4.5×104尾,由于当年夏季罕见高温而致干旱溪水断流,结果不理想.     

半导体自组织量子点量子发光机理与器件

介绍了自组织量子点单光子发光机理及器件研究进展.主要内容包括：半导体液滴自催化外延GaAs纳米线中InAs量子点和GaAs量子点的单光子发光效应、自组织InAs/GaAs量子点与分布布拉格平面微腔耦合结构的单光子发光效应和器件制备,单量子点发光的共振荧光测量方法、量子点单光子参量下转换实现的纠缠光子发射、单光子的量子存储效应以及量子点单光子发光的光纤耦合输出芯片制备等.