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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AIN/GaN heterostructure field-effect transistors 下载免费PDF全文
By making use of the quasi-two-dimensional (quasi-2D) model, the current-voltage (l-V) characteristics of In0AsA10.82N/A1N/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance-voltage (C-V) characteristics and I-V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm2/V.s for the prepared In0.38AI0.82N/A1N/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain-source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher. 相似文献
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Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor 下载免费PDF全文
We simulate the current-voltage (I-V) characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths using the quasi-two-dimensional (quasi-2D) model. The calculation results obtained using the modified mobility model are found to accord well with the experimental data. By analyzing the variation of the electron mobility for the two-dimensional electron gas (213EG) with the electric field in the linear region of the AlGaN/AlN/GaN HFET I-V output characteristics, it is found that the polarization Coulomb field scattering still plays an important role in the electron mobility of AlGaN/AlN/GaN HFETs at the higher drain voltage and channel electric field. As drain voltage and channel electric field increase, the 2DEG density reduces and the polarization Coulomb field scattering increases, as a result, the 2DEG electron mobility decreases. 相似文献
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近年来,随着各种新技术的出现和材料科学的发展,光学滤波器的种类不断增加[1],特别是光学相位滤波器发展尤为迅速。应用范围也随之更加广泛.所谓光学相位滤波器就是对入射光波进行相位调制的元件.虽然从广义上来说诸如透镜、棱镜等光学元件都可以视为相位滤波器,但是,这里我们仅着眼于那些取离散值的相位滤波器,对其发展、分类、应用、制备方法及所用材料作一介绍.早在1935年Zernike提出了相位?... 相似文献
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光学信息处理以其速度快、信息容量大、结构简单、可以同时完成二维或多通道运算等优点而被人们所重视,并已成为现代光学的重要组成部分.光学信息处理的基本装置可以分为以下几个主要部分:光源、输入转换器、光学处理系统以及输出转换器.目前,输入转换器主要通过感光胶片将输入信号或图象送入处理系统.光学处理系统是由透镜或其它全息光学元件构成的模拟运算系统,此系统中的空间滤波器是光学信息处理系统中的关键元件,?... 相似文献
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电喷雾质谱法研究人参皂苷与溶菌酶的相互作用 总被引:1,自引:0,他引:1
用电喷雾质谱法研究了溶菌酶与人参皂苷Rg1和Re的非共价相互作用。非共价复合物的解离常数可以由溶菌酶和复合物的峰高直接计算得到。由各个体系得到的溶菌酶与Rg1和Re的一级解离常数KD, 1是一致的,但是二级解离常数KD, 2的差别较大。由此可以推断出复合物的峰高越强,结果的精密度越好。当固定溶菌酶的浓度不变时,复合物的解离常数会随着人参皂苷的浓度的增加而略微的增大。而当固定人参皂苷的浓度时,复合物的解离常数会随着溶菌酶的浓度的增加而减小。计算结果还证明了人参皂苷Rg1与溶菌酶的结合能力大于Re。 相似文献
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溶剂浮选法分离富集大黄中的有效成分 总被引:1,自引:0,他引:1
采用溶剂浮选法对大黄提取液中的芦荟大黄素、大黄素、大黄酚以及大黄素甲醚进行了分离富集,并用高效液相色谱法分别测定了其含量。考察了料液浓度、浮选溶剂、浮选时间、浮选液pH值、氮气流速和电解质NaCl浓度对浮选效率的影响,并与泡沫浮选法和溶剂萃取法进行了比较。结果表明:溶剂萃取效果最差,泡沫浮选次之,溶剂浮选法分离富集效果最好。当料液浓度为6.4mg/mL,浮选时间为30min,浮选液pH一1~2,氮气流速为20mL/min,电解质NaCl浓度为0.4mol/L时,溶剂浮选效率最佳。 相似文献