何以为镓？

镓是元素周期表的第31号元素,本文采取拟人化的手法,以讲故事的形式对它的发现、性质以及应用等方面进行介绍,旨在通过这种集科学性和趣味性于一体的科普方式,让读者充分了解到——何以为镓?     

不同形貌锰氧化物对重金属离子吸附的AAS和AFS分析

通过简单的水热法控制性合成了两种不同形貌的锰氧化物(层状OL和隧道状OMS),并考察了这两种材料对几种重金属离子Pb2+,Cu2+,Ni2+,Hg2+的吸附。通过原子吸收光谱(AAS)和原子荧光光谱(AFS)测定吸附前后离子浓度,比较两种材料的吸附性能,以及对不同离子的选择性吸附。实验表明OMS形貌的锰氧化物是一种良好吸附剂,对铅离子具有很好的选择性吸附,两分钟内吸附率达98%。由此可建立一种简单、绿色、高效地去除污水中重金属离子的方法。     

Improvement in electroluminescence performance of n-ZnO/Ga_2O_3 /p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.     

Study of white light emission from ZnS/PS composite system

ZnS films were deposited by pulsed laser deposition(PLD)on porous silicon(PS)substrates formed by electrochemical anodization of p-type(100)silicon wafer.The photoluminescence(PL)spectra of ZnS/PS composites were measured at room temperature.Under different excitation wavelengths,the relative integrated intensities of the red light emission from PS layers and the blue-green emission from ZnS films had different values.After samples were annealed in vacuum at different temperatures(200,300,and 400℃)for 30 min respectively,a new green emission located at around 550 nm appeared in the PL spectra of all ZnS/PS samples,and all of the ZnS/PS composites had a broad PL band(450-700 nm)in the visible region,exhibiting intensively white light emission.     

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback(LC-DFB) laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio(SMSR) as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature(uncoated facet). A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.     

寓教于趣的一些做法

我认为化学是一门“美妙的学科”,它远远较其他学科有趣,但若碰上“严峻而又自命不凡”的教师,便令人畏惧:“我决不降低标准、化学是严肃的科学,决非游戏.”想来读者明白此言含义.我不主张降格以求,而是建议在教学中渗入一些幽默和兴味以激发学习的兴趣.实践表明它会显著提高成绩.     

舌尖上的化学——阿克霍尔寻忆记

"清醠之美,始于耒耜",作为中国饮食文化不可或缺的组成部分,酒已经陪伴我们走过数千年的历史。本文采取拟人化的手法,以阿克霍尔追寻自己记忆的形式对酒的主要成分——乙醇的性质、来源、代谢等方面进行介绍,旨在通过这种集科学性和趣味性于一体的科普方式,让读者感受舌尖上的化学!     

舌尖上的化学——酱油那些事儿

古语云:"柴米油盐酱醋茶",作为厨房中最普遍的调味品之一,酱油每天都会为我们带来丰富的味觉体验。为了让读者更加全面深刻地了解这一与我们生活密切相关的调味品,本文从化学的角度介绍了酱油的历史、酿造工艺和色香味形成的原理。     

含分枝铜纳米线多孔铝膜的偏振特性

利用二次阳极氧化法制备了具有分枝结构的多孔铝(PAA)模板,并以交流电化学沉积的方法在该模板中合成了分枝状的铜纳米线。用SEM观察样品的形貌结构,用分光光度计测量了样品的透射光谱和偏振光谱。实验结果表明,含分枝状铜纳米线结构的多孔铝膜在近红外光区具有较高的透射率,且得到了14～22 dB的消光比。这种微偏振器件制备方法简单、效率高、造价低,在光电集成领域有着广泛的应用前景。