压力、温度和晶粒尺寸对Fe-N合金的合成及结构的影响

在 1× 1 0 - 3 Pa～ 4 GPa的压力和 5 80～ 930 K温度范围内 ,利用高压技术并结合机械球磨 ,研究了压力、温度和晶粒尺寸对α-Fe与非晶 BN的固态反应的影响 .发现高压和晶粒细化可以极大地促进α-Fe和非晶 BN的固态反应过程 ,α-Fe与非晶 BN发生固态反应的临界晶粒尺寸约 8nm.压力和温度对反应产物及其晶体结构有明显影响 .2 GPa和 80 0 K时 ,反应产物为具有正交结构的 Fe-N新相 ;在 3～ 4 GPa和 690～80 0 K时 ,可形成单一ε-Fex N合金相 ;而在 4 GPa和 930 K以上 ,反应产物由 Fe-N合金相转变为 Fe3B相     

一种具有“1111”型结构的新型稀磁半导体(La1–xSrx)(Zn1–xMnx)SbO

利用高温固相反应法,成功合成了一种新型块状稀磁半导体(La_1–xSr_x)(Zn_1–xMn_x)Sb O(x=0.025, 0.05,0.075, 0.1).通过(La³⁺, Sr²⁺)、(Zn²⁺, Mn²⁺)替换,在半导体材料La Zn Sb O中分别引入了载流子与局域磁矩.在各掺杂浓度的样品中均可观察到铁磁有序相转变,当掺杂浓度x=0.1时,其居里温度Tc达到了27.1 K,2 K下测量获得的等温磁化曲线表明其矫顽力为5000 Oe.(La_1–xSr_x)(Zn_1–xMn_x)Sb O与"1111"型铁基超导体母体LaFeAsO、"1111"型反铁磁体LaMnAsO具有相同的晶体结构,且晶格参数差异很小,为制备多功能异质结器件提供了可能的材料选择.     

Progress of novel diluted ferromagnetic semiconductors with decoupled spin and charge doping: Counterparts of Fe-based superconductors

Diluted ferromagnetic semiconductors(DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronic(spintronic) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in Ⅲ-Ⅴ(Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature T_Co f 230 K has been achieved in(Ba,K)(Zn,Mn)_2As_2. However, most DMSs, including(Ga,Mn)As, are p-type, i.e., the carriers that mediate the ferromagnetism are holes. For practical applications, DMSs with n-type carriers are also advantageous. Very recently,a new DMS Ba(Zn,Co)_2As_2 with n-type carriers has been synthesized. Here we summarize the recent progress on this research stream. We will show that the homogeneous ferromagnetism in these bulk form DMSs has been confirmed by microscopic techniques, i.e., nuclear magnetic resonance(NMR) and muon spin rotation(μSR).