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近年来,新兴的三元铜基卤化物(CsCu2I3)材料由于具有高荧光量子产率、环保无毒、环境稳定、成本低廉等诸多优点,在环保型发光二极管(LED)中的应用备受瞩目。然而,由于难以控制的结晶动力学,制备高质量的CsCu2I3发光层薄膜仍是一个巨大的挑战,这限制了LED器件性能的进一步提升。本文通过使用甲苯与甲醇混合溶剂作为反溶剂来增强反溶剂的钉扎效应,增加CsCu2I3晶体的成核密度,降低薄膜的晶粒尺寸,进而形成了光滑、致密的CsCu2I3纳米晶薄膜。此外,混合反溶剂策略可以有效增强辐射复合效率,显著提高CsCu2I3薄膜的发光性能,相比对照样品(只使用甲苯),混合反溶剂法所制备薄膜的荧光量子产率(PLQY)增加了1.5倍,激子束缚能从~201.6 meV提高至~234.5 meV。最终,相比对照器件,基于混合反溶剂策略的CsCu2I3 相似文献
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采用光辅助金属有机化学汽相沉积(PA-MOCVD)法在n-SiC(6H)衬底上制备出As掺杂的p型ZnO薄膜,并制备出相应的p-ZnO:As/n-SiC异质结器件。X射线衍射(XRD)和光致发光(PL)测试表明,ZnO薄膜具有较好的结构和光学特性。电流-电压(I-V)测试结果表明,该型异质结器件具有良好的整流特性,开启电压为5.0 V,反向击穿电压约为-13 V。正向偏压下,器件的电致发光(EL)谱表现出两个分别位于紫外和可见光区域的发光峰,通过和ZnO、SiC的PL谱对照,证实异质结器件的发光峰来源于ZnO侧的辐射复合。 相似文献
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采用金属有机化学气相沉积(MOCVD)方法在Si衬底上进行了ZnO的成核与薄膜生长研究。ZnO薄膜的形貌和结晶特性由成核和后期生长过程共同决定,初期成核温度决定了其尺寸和密度,进而影响后期ZnO主层的生长行为,但由于高温对后期ZnO纳米柱横向生长的抑制,纳米柱的尺寸并没有因为成核尺寸的增大而变大,因此在560℃得到了晶柱尺寸最大、密度最小的ZnO薄膜。最后通过改变成核温度,优化了ZnO外延膜的结晶质量。 相似文献
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ZnO-Based Transparent Thin-Film Transistors with MgO Gate Dielectric Grown by in-situ MOCVD 下载免费PDF全文
ZnO transparent thin-film transistors with MgO gate dielectric were fabricated by in-situ metal organic chemicM vapor deposition (MOCVD) technology. We used an uninterrupted growth method to simplify the fabrication steps and to avoid the unexpectable contaminating during epitaxy process. MgO layer is helpful to reduce the gate leakage current, as well as to achieve high transparency in visible light band, due to the wide band gap (7. 7eV) and high dielectric constant (9.8). The XRD measurement indicates that the ZnO layer has high crystal quality. The field effect mobility and the on/off current ratio of the device is 2.69cm^2V^-1s^-1 and - 1 × 10^4, respectively. 相似文献
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Low-dimensional phases engineering for improving the emission efficiency and stability of quasi-2D perovskite films 下载免费PDF全文
The two-dimensional (2D) Ruddlesden-Popper-type perovskites, possessing tunable bandgap, narrow light emission, strong quantum confinement effect, as well as a simple preparation method, are identified as a new generation of candidate materials for efficient light-emitting diodes. However, the preparation of high-quality quasi-2D perovskite films is still a challenge currently, such as the severe mixing of phases and a high density of defects within the films, impeding the further promotion of device performance. Here, we prepared the quasi-2D PEA2MAn-1PbnBr3n+1 perovskite films by a modified spin-coating method, and the phases with large bandgap were effectively suppressed by the vacuum evaporation treatment. We systematically investigated the optical properties and stability of the optimized films, and the photoluminescence (PL) quantum yield of the treated films was enhanced from 23% to 45%. We also studied the emission mechanisms by temperature-dependent PL spectra. Moreover, the stability of films against moisture, ultraviolet light, and heat was also greatly improved. 相似文献
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采用金属有机化学气相沉积(MOCVD)技术在蓝宝石衬底上制备出晶体质量较好的透明导电的ZnO/Au/ZnO(ZAZ)多层膜,其中,Au夹层是通过射频磁控溅射的方法获得。通过对Au夹层进行不同温度的退火处理,研究了Au层退火温度对ZAZ多层膜的结构特性、电学性能和光学特性的影响。利用原子力显微镜(AFM)、扫描电子显微镜(SEM)、X射线衍射(XRD)仪、霍尔效应测试和透射谱分析等测试手段对ZAZ多层膜的性质进行了分析。测试结果表明,在200 ℃下对Au夹层进行快速退火处理,多层膜的结构、电学和光学性质达到最优,表面等离子体效应也更明显。其中,XRD(002)衍射峰的半高宽为0.14°,电阻率为2.7×10-3 Ω·cm,载流子浓度为1.07×1020 cm-3,可见光区平均透过率为75.3%。 相似文献
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Electrically Pumped Ultraviolet Random Lasing from p-ZnO:As Based on p-ZnO/N-GaN Heterojunction 下载免费PDF全文
p-ZnO:As is prepared by the GaAs interlayer doping method. The potential applications of p-ZnO:As are evaluated by applying it into the construction of a p-ZnO/n-GaN heterojunction, though its hall, electrochemical capacitance-voltage and photoluminescence results show a hole concentration at the level of -10^17 cm-3 and a good optical quality. Ultraviolet random lasing is detected from the studied device under forward bias. Specific lasing modes are confirmed to originate from p-ZnO:As by further introducing the p-ZnO/MgO/n-GaN het- erostructure. The resulting random lasing phenomena demonstrate the promising prospects in device application of p-ZnO:As fabricated by using our methods. 相似文献
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Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers 下载免费PDF全文
Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up.Here in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier.For the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions.Uniform electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating plasmons.The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier.The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices. 相似文献