原子发射光谱双谱线法测量固体火箭发动机内燃气温度

发展了一种利用原子发射双谱线法，测试固体火箭发动机燃烧室内燃气温度的方法，设计了相应的测试系统。该方法利用石英光学纤维，将固体火箭发动机内高温高压燃气的光谱辐射信号传入测量系统；选用了两条波长间隔小的谱线，大大减少了光谱辐射率，光谱透射率等对光谱测量的影响，设计使用了耐压测量探头，保证在高压，强腐蚀条件下，系统的密封性和光的透过率，对装填有SQ－2推进剂的固体火箭发动机燃烧室内的气流温度进行了在线检测，测量时间分辨率可高达0．5μs。     

分子发射光谱法测量微波等离子体气体温度

通过OH自由基A2Σ+→X2Π_r电子带系分子发射光谱测温法,实现了对氩气、氮气、空气三种大气压微波等离子体气体温度的测量。探究了不同微波功率、不同气体流量下气体温度的变化规律,测量了氮气、空气微波等离子体羽流的轴向温度分布。实验结果表明,不同工作条件下微波等离子体核心温度普遍超过2 000 K,空气微波等离子体可超过6 000 K;同样工作条件下三种微波等离子体气体温度满足：T_Ar<T_N2<T_Air;气体温度总体上随微波功率增加而小幅增加,随气体流量下降而小幅降低;氮气与空气等离子体羽流温度沿轴向迅速降低。为验证分子发射光谱测温法的准确性,以热电偶测温作为比对,对温度较低的介质阻挡放电氩气等离子体进行了温度测量,实验表明,分子发射光谱法与热电偶所测结果十分接近。     

等离子体电子温度的发射光谱法诊断

电子温度是表征等离子体性质的一个重要参数。由于等离子体放电过程非常复杂,要实时准确测定其电子温度值非常困难。发射光谱法作为一种等离子体诊断技术,因其所使用的仪器相对简单,并采用非接触测量,灵敏度高,响应速度快,可广泛地应用于各种等离子体性质的研究和参数的诊断。文章介绍了测定等离子体电子温度的双谱线法、多谱线斜率法、等电子谱线法、Saha-Boltzmann法、谱线绝对强度法等多种发射光谱法,同时综述了这些方法在等离子体电子温度诊断中的应用,旨在为实际过程中选择合适的等离子体诊断方法提供参考。     

用发射光谱法测量氮气直流辉光放电的转动温度

本文报道了氮气气压分别为10和20Pa时，对直流辉光放电的发射光谱进行测量和分析的结果。选择的研究对象为N2放电中形成的N2^ B^2∑u^ →X^2∑g^ 跃迁的Δv=v′-v″=0谱带系中v′=0→v″=0谱带的R支。在阴极背面辉光区、阴极鞘层区、正柱区以及阳极辉光区中分别选择一点进行了转动分辨的发射光谱的测量。利用自己编写的光谱拟合程序，获得了相应的实验条件下N2^ 的转动温度，给出了转动温度随放电电压的变化趋势，其结果可以用直流放电的帕邢定律得到很好的解释。在10和20Pa气压下，放电的阴极鞘层区、正柱区、阳极辉光区中的转动温度都随放电电压呈现出了不同的变化趋势，甚至是完全相反的变化趋势。我们认为这是由于气压不同时，放电状态不同所致：气压为10Pa时的放电是正常辉光放电，而气压为时20Pa的放电为反常辉光放电。     

发射光谱Boltzmann法测量毛细管放电产生的电热高密度等离子体温度之误差分析

本文详细地分析了目前文献报道的 :采用发射光谱Boltzmann法 ,测量毛细管放电产生的电热高密度等离子体温度时 ,产生误差的原因。当正确地选择光谱参数———谱线上能级统计权重g、跃迁几率A和上能级能量Ei ———Boltzmann法测量毛细管放电产生的电热高密度等离子体温度时 ,实验可信度可高达 99%～ 99 5 % ,测量误差仅为± 6 5 %。     

磁化水技术在电感耦合等离子体-原子发射光谱法中的应用

考察了被测元素谱线强度随磁感应强度的变化情况.在优化磁感应强度0.24T条件下,研究了搅拌条件下样品溶液磁化时间对谱线强度及信背比的影响.经过测量自来水样品中元素Zn、Fe、Mg(I、I)、Si、V谱线强度表明,在对水样品进行搅拌磁化时,所测元素的谱线强度及信背比均有所增大;当水样品被磁化处理3h,上述元素的谱线强度分别比未磁化时增加了42.2%、97.9%、10.4%、10.1%、81.2%和28.8%,而且元素Zn、Fe、Si和V的信背比也分别增加了13.8%、86.9%、64%和28.8%,有利于降低光谱分析检出限.     

基于辐射法和原子发射光谱法的转炉口火焰温度测量

转炉炼钢的终点控制包括钢水出钢时温度及其成分的控制,炉口火焰能够反映炉内脱碳速率及转炉运行参数等。工业炉燃烧火焰可见光谱段,普遍存在着钾(K)和钠(Na)等碱金属元素的原子发射谱线,利用K的特征谱线相对比值可以计算火焰温度。基于辐射双色法,三色法和谱线相对强度法对转炉口火焰温度进行了测量;数据处理过程中对特征谱线进行了基线拟合提取,小波脊线拟合提取;特征谱线进行了Gauss函数和Lorenz函数拟合。结果表明,辐射测温法对谱线比较敏感,选择合理的波段能够有效,精确地测量火焰温度;采用谱线相对强度法受制于特征谱线的数学模型、谱线的跃迁机率、能级的简并度及火焰的光学厚度,需要分辨率非常高的光谱仪才能进行高温转炉火焰中电子温度的测量。     

采用简化的飞行时间荧光成像法测量冷原子样品的等效温度

本文介绍了用于冷原子样品等效温度测量的简化的飞行时间荧光成像法。将用于激光冷却和俘获原子的冷却光,代替标准的飞行时间荧光成像法中额外引入的探测光。在铯原子磁光阱基础上,通过进一步采用偏振梯度冷却技术使冷原子等效温度有效地降低。采用简化的飞行时间荧光成像法测量的铯原子气室磁光阱(光学粘团)的等效温度,典型值为TY≈22.3±2.2μK,TZ≈15.4±2.7μK(TY≈11.6±1.1μK,TZ≈2.8±1.2μK)。本文中的简化飞行时间荧光成像方案,在不牺牲冷原子样品等效温度测量的精度和准确度情况下,更容易在实验中执行和推广,对于应用于冷原子微波原子钟、冷原子光频原子钟、冷原子干涉重力仪等量子精密测量领域,以及采用冷原子样品进一步开展量子光学、量子信息处理等领域的研究工作,具有积极意义和良好的推广价值。     

Effect of sample temperature on laser-induced semiconductor plasma spectroscopy

We investigate the temperature dependence of the emission spectrum of a laser-induced semiconductor(Ge and Si) plasma. The change in spectral intensity with the sample temperature indicates the change of the laser ablation mass. The reflectivity of the target surface is reduced as the sample is heated, which leads to an increase in the laser energy coupled to the surface of the sample and eventually produces a higher spectral intensity.The spectral intensities are enhanced by a few times at high temperatures compared with the cases at low temperatures. The spectral intensity of Ge is enhanced by 1.5 times at 422.66 nm, and 3 times at589.33 nm when the sample temperature increases from 50°C to 300°C. We can obtain the same emission intensity by a more powerful laser or by less pulse energy with a higher sample temperature. Based on experimental observations we conclude that the preheated sample can improve the emission intensity of laser-induced semiconductor plasma spectroscopy.     

Measurement of soft X-ray radiation using the PF-4 plasma focus setup with semiconductor X-ray detectors

Soft X-rays were measured with time resolution at angles of 45° and 90° to the system axis in an argon atmosphere using SPPD 11-04 fast semiconductor detectors. The dependence of the X-ray yield was studied as a function of the voltage of a capacitor bank of the plasma focus in a range from 8 to 14 kV and argon pressures from 0.5 to 4 Torr. Generalization of the results obtained allowed possible interpretation of the nature of observed emission.     

Realization of temperature in semiconductor using optical principle

Owing to temperature is important for both elemental and compound semiconductor to study various properties, this paper presents a novel technique to measure the temperature in semiconductor at wavelength, 10.59 μm using optical principle. Here both reflection and absorption losses are considered to find out temperature in semiconductor. Reflectance is found using plane wave expansion method, where absorption factor is determined using Maxwell's curl equations. Simulation result reveals that reflectance and transmitted intensity vary linearly with respect to different temperatures. Apart from this, it is also seen that absorbance is zero for all semiconductor at wavelength 10.59 μm. The excellent linear variation of transmitted intensity gives an accurate measurement of temperature in semiconductors at aforementioned wavelength.     

Measurement of specimen permittivity using a waveguide bridge

The proposed method for measuring the permittivity of the medium in the superhigh frequency band makes use of the depolarizing effect of the electromagnetic field. Upon exposing a dielectric particle to an electromagnetic field having a definitely oriented electric-field intensity vector, E_n, the reflected electric-field intensity vector, E₀, will not, in general, coincide in direction with the incident field (as a result of depolarization). This depolarization depends upon the form and dimensions of the particle, on its permittivity, and on the wavelength.     

Measurement of regional brain temperature using proton spectroscopic imaging: validation and application to acute ischemic stroke

A magnetic resonance proton spectroscopic imaging (SI) technique was developed to measure regional brain temperatures in human subjects. The technique was validated in a homogeneous phantom and in four healthy volunteers. Simulations and calculations determined the theoretical measurement precision as approximately +/-0.3 degrees C for individual 1-ml voxels. In healthy volunteers, repeated measurements on individual voxels had an S.D. = 1.2 degrees C. In a clinical study, 40 patients with acute ischemic stroke were imaged within 26 h (mean, 10 h) of onset. Temperatures were highest in the region that appeared abnormal (i.e., ischemic) on diffusion-weighted imaging (DWI) compared with a normal-appearing brain. The mean temperature difference between the DWI "lesion" area and the "normal brain" was 0.17 degrees C [P < 10(-3); range, 2.45 degrees C (hotter)-2.17 degrees C (cooler)]. Noninvasive temperature measurement by SI has sufficient precision to be used in studies of pathophysiology in stroke and in other brain disorders and to monitor therapies.     

Measurement of dense plasma temperature of the shock-compressed silicon

Measurements of the brightness temperature and compressibility of a dense silicon plasma formed by powerful shock waves (SWs) passing through a single-crystal sample have been carried out. Plane SWs were created using an explosive technique: the traditional plane acceleration of a steel driver plate made it possible to obtain pressures in silicon up to 133 GPa, and the use of “Mach” cumulative generators realized the pressures up to 510 GPa. The shock Hugoniot of silicon was determined by the impedance matching with α-quartz as the reference. The intensity of emitted thermal radiation was measured in the infrared range λ ∼ 1.5 μm, where silicon is optically transparent, and in the visible range of the spectrum. A significant (up to five times) understatement of the measured values of the brightness temperature in comparison with the values calculated by the equation of state was found. Taking into account the reflective properties of the SW in silicon does not lead to an agreement with the experiment. The estimates of relaxation processes behind the shock front suggest the presence of a zone of the establishment of ionization equilibrium with a width of ∼10 μm.     

Measurement of low electronic temperature in weakly magnetized plasma

The measurement of low electronic temperature by radiofrequecy quadrupole probe has been obtained in weakly magnetized argon plasma. The comparison with the experimental results in unmagnetized plasma confirm that the probe act as an interferometer for the electrostatic waves.     

Characteristics of semiconductor bridge (SCB) plasma generated in a micro-electro-mechanical system (MEMS)

Plasma ignition method has been applied in various fields particularly to the rocket propulsion, pyrotechnics, explosives, and to the automotive air-bag system. Ignition method for those applications should be safe and also operate reliably in hostile environments such as; electromagnetic noise, drift voltage, electrostatic background and so on. In the present Letter, a semiconductor bridge (SCB) plasma ignition device was fabricated and its plasma characteristics including the propagation speed of the plasma, plasma size, and plasma temperature were investigated with the aid of the visualization of micro scale plasma (i.e., ⩽350 μm), which generated from a micro-electro-mechanical poly-silicon semiconductor bridge (SCB).     

Measurement of the conductivity of nonuniform semiconductor layers by a probe method

The paper deals with the study, by a 4-probe method, of semiconductor layers which are non-uniform in depth. The appropriate boundary conditions in electrodynamics are solved and equations are obtained which enable the average values of the electric conductivity to be calculated from the results of 4-probe measurements. It is shown how to use the equations to measure the surface conductivity of semiconducting layers and to determine how this quantity varies.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 10, pp. 33–38, October, 1971