Sub-picosecond UV-laser ablation of Ni films

Laser ablation of thin Ni films on fused silica by 0.5 ps KrF-excimer-laser pulses at 248 nm is reported. The onset of material removal from different film thicknesses (0.1, 0.3, 0.6 and 1.0 m) was measured in a laser ionization time-of-flight mass spectrometer by the amount of Ni atoms vs laser fluence. Significant amounts of metal atoms are already evaporated at laser fluences around 20 mJ/cm², a threshold up to 100 times smaller compared to the one for 14 ns pulses. In contrast to ns laser pulses, the ablation threshold for 0.5 ps pulses is independent of the film thickness. These results reflect the importance of thermal diffusion in laser ablation of strongly absorbing and thermally good conducting materials and prove that for ablation with short pulses, energy loss to the bulk is minimized.     

Ultraviolet photoablation of a plasma-synthesized fluorocarbon polymer

Plasma polymerized tetrafluoroethylene (PPTFE) is shown to undergo efficient 248 nm excimer laser ablation. The principle difference between this material and the analogous polytetrafluoroethylene (PTFE), which results in only poor quality ablation, is PPTFE's much greater absorption coefficient (7×10⁴ vs. 10² cm^–1). A plot of the ablation depth per pulse versus incident fluence indicates that the threshold for significant ablation occurs near 50 mJ/cm², and that approximately 0.7 m/pulse can be removed at 800 mJ/cm². Near threshold, the ablation rate curve can be fit by a single Arrhenius-type exponential. This suggests that the removal process is at least partially governed by a photothermal process, similar to well-known laser induced thermal desorption experiments. In the very low fluence regime between 10 and 30 mJ/cm², small removal rates are measured in a process likely dominated by non-thermal ablation. The paper concludes with a discussion of the high quality, micron-size features that can be directly patterned into PPTFE surfaces.     

Early stage of the material removal during ArF laser ablation of graphite

Material removal during ArF excimer laser ablation of graphite at atmospheric pressure was investigated by two independent methods; 1) by observation of the propagating properties of the shock wave generated by the carbonaceous ejecta and 2) by in situ measurement of the size distribution of carbon nanoparticles condensing in the ablation plume. This latter was carried out by a scanning mobility particle sizer system based on a differential mobility analyser. The performed measurements indicate that the material removal during ArF laser ablation consists of two steps at fluences above the threshold fluence. First, a thin layer of carbon (of the order of 1 nm) is removed by a quick desorption process, leading to shockwave formation. This process takes place in a ns time scale, and desorption rate estimations reveal that this can not be explained by thermal surface evaporation. Since to our knowledge there is no thermal process that could account for the estimated desorption rate, it is argued that this is a fast photochemical (i.e. non-thermal) process. The size distribution of the condensed nanoparticles related to this step shows a rising edge at diameters below 10 nm. At fluences above the ablation threshold, the majority of the material is ejected in the second phase, resulting in condensation of carbon nanoparticles, peaking at 50 nm diameters in the size spectrum. Both shockwave formation and material removal are also detected well below the ablation threshold fluence, which is attributed to the photochemical process. PACS 61.46.+w; 81.16.Mk     

Threshold behavior in polyimide photoablation: Single-shot rate measurements and surface-temperature modeling

The ablation rate of Kapton-type polyimide has been measured as a function of incident fluence and excimer laser wavelength using a sensitive quartz-crystal microbalance (QCM). The experiments were performed such that the fluence and the ablated depth were known for each laser pulse, avoiding the need to average rate and fluence data over many pulses. By limiting the investigations to the low-fluence regimes near ablation threshold, high precision and detailed curve shapes were obtained. It was found that the ablation rate increases smoothly and exponentially with increasing fluence for 248, 308, and 351 nm wavelengths. This exponential behavior was modeled using an Arrheniustype thermal rate equation. In contrast, the 193 nm curve is linear in fluence, displays a sharp threshold, and is consistent with a possible photochemical ablation mechanism. Using a sophisticated surface temperature modeling code, the maximum laser induced surface temperature at the fluence at which ablation can first be detected is found to be the same, 850° C, for all four wavelengths. This ablation temperature is significantly higher than the approximately 500° C temperature at which Kapton starts to degrade under isothermal heating conditions.     

Single-shot ablation threshold of chromium using UV femtosecond laser pulses

Single-shot ablation threshold for thin chromium film was studied using 266 nm, femtosecond laser pulses. Chromium is a useful material in the nanotechnology industry and information on ablation threshold using UV femtosecond pulses would help in precise micromachining of the material. The ablation threshold was determined by measuring the ablation crater diameters as a function of incident laser pulse energy. Absorption of 266 nm light on the chromium film was also measured under our experimental conditions, and the absorbed energy single-shot ablation threshold fluence was \(46 \pm 5\)  mJ/cm². The experimental ablation threshold fluence value was compared to time-dependent heat flow calculations based on the two temperature model for ultrafast laser pulses. The model predicts a value of 31.6 mJ/cm² which is qualitatively consistent with the experimentally obtained value, given the simplicity of the model.     

飞秒激光的波长对SiC材料烧蚀的影响

利用10倍的显微物镜将近红外飞秒激光脉冲汇聚到宽带隙半导体材料6H SiC的前表面,研究样品的烧蚀及诱导微细结构。用扫描电镜(Scanning electron microscope,SEM)及光学显微镜测量烧蚀斑。利用烧蚀面积与激光脉冲能量的关系确定SiC的烧蚀阈值。给出了SiC样品的烧蚀阈值与飞秒激光波长的依赖关系。实验结果表明,可见光区随波长增加,烧蚀阈值从0.29J/cm2增加到0.67J/cm2;而在近红外区,SiC的烧蚀阈值为0.70J/cm2左右,基本上不随激光波长变化而改变。结合计算结果,可以认为在飞秒激光烧蚀SiC的过程中,在近红外区,光致电离和碰撞电离均起到了重要的作用;而在可见光区,光致电离的作用相对大一些。     

Surface modulation of silicon surface by excimer laser at laser fluence below ablation threshold

Controlled single step fabrication of silicon conical surface modulations on [311] silicon surface is reported utilizing KrF excimer laser [λ=248 nm] at laser fluence below ablation threshold laser fluence. When laser fluence was increased gradually from 0 to 0.2 J/cm² for fixed 200 numbers of shots; first nanopores are observed to form at 0.1 J/cm², then very shallow nanocones evolve as a function of laser fluence. At 0.2 J/cm², nanoparticles are observed to form. Up to 0.15 J/cm² the very shallow nanocone volume is smaller but increases at a fast rate with laser fluence thereafter. It is observed that the net material volume before and after the laser irradiation remains the same, a sign of the melting and resolidification without any ablation.     

Nanosecond pulsed laser ablation of silicon in liquids

Laser fluence and laser shot number are important parameters for pulse laser based micromachining of silicon in liquids. This paper presents laser-induced ablation of silicon in liquids of the dimethyl sulfoxide (DMSO) and the water at different applied laser fluence levels and laser shot numbers. The experimental results are conducted using 15 ns pulsed laser irradiation at 532 nm. The silicon surface morphology of the irradiated spots has an appearance as one can see in porous formation. The surface morphology exhibits a large number of cavities which indicates as bubble nucleation sites. The observed surface morphology shows that the explosive melt expulsion could be a dominant process for the laser ablation of silicon in liquids using nanosecond pulsed laser irradiation at 532 nm. Silicon surface’s ablated diameter growth was measured at different applied laser fluences and shot numbers in both liquid interfaces. A theoretical analysis suggested investigating silicon surface etching in liquid by intense multiple nanosecond laser pulses. It has been assumed that the nanosecond pulsed laser-induced silicon surface modification is due to the process of explosive melt expulsion under the action of the confined plasma-induced pressure or shock wave trapped between the silicon target and the overlying liquid. This analysis allows us to determine the effective lateral interaction zone of ablated solid target related to nanosecond pulsed laser illumination. The theoretical analysis is found in excellent agreement with the experimental measurements of silicon ablated diameter growth in the DMSO and the water interfaces. Multiple-shot laser ablation threshold of silicon is determined. Pulsed energy accumulation model is used to obtain the single-shot ablation threshold of silicon. The smaller ablation threshold value is found in the DMSO, and the incubation effect is also found to be absent.     

The influence of thermal diffusion on laser ablation of metal films

Single-shot ablation thresholds of nickel and gold films in the thickness range from 50 nm to 7 m have been measured for 14 ns laser pulses at 248 nm, using photoacoustic shock wave detection in air. The metal films were deposited on fused silica substrates. The ablation threshold was found to increase linearly with film thickness up to the thermal diffusion length of the film. Beyond this point it remains independent of film thickness. The proportionality between threshold fluence and thickness allows the prediction of ablation thresholds of metal films from the knowledge of their optical properties, evaporation enthalpies and thermal diffusivities. Physically it proves that ablation is driven by the energy density determined by the thermal diffusion length. A simple thermodynamic model describes the data well. Thermal diffusivities, an essential input for this model, were measured using the technique of transient thermal gratings. In addition, the substrate dependence of the ablation threshold was investigated for 150 nm Ni films.     

Deep drilling on a silicon plate with a femtosecond laser: experiment and model analysis

The ablation rate when drilling fine holes having large aspect ratios in silicon substrates with femtosecond laser pulses was estimated from mechanically ground cross sections of the ablated holes. The ablation rate shows a dramatic change at the depth at which the laser pulse reaches a certain fluence, which is nearly constant when the initial laser fluence was varied from 14.5 to 59.4 J/cm². The ablation rate, threshold fluence, in three fluence domains, and the transition fluences at which the ablation rate shows a dramatic change, were derived. However, when a pulse energy of 200 μJ was used a much greater ablation rate was obtained, suggesting that another fluence domain for larger ablation rates exists. The experimentally obtained hole depths as a function of shot numbers were reproduced by a theoretical model, which incorporates laser pulse attenuation in the holes that is the same as that in waveguides for some attenuation coefficient and ablation rates for three fluence domains. PACS 42.62.-b; 42.65.Re; 78.40.Fy; 78.47.+p; 81.20.Wk     

Visualization of nanosecond laser-induced dewetting,ablation and crystallization processes in thin silicon films

In the present work, nanosecond pulsed laser crystallization, dewetting and ablation of thin amorphous silicon films are investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 7 ns temporal width are irradiated on silicon film. Below the dewetting threshold, crystallization process happens after 400 ns laser irradiation in the spot central region. With the increasing of laser fluence, it is observed that the dewetting process does not conclude until 300 ns after the laser irradiation, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to solidification of transported matter at about 500 ns following the laser pulse exposure.     

Excimer-laser-induced permanent electrical conductivity in solid C60 films

After being irradiated in air by a XeCI (308 nm) excimer laser, the electrical conductivity of solid thin-film C₆₀ has been improved by more than six orders of magnitudes. The products resulting from laser irradiation of C₆₀ films have been investigated by Raman scattering and the onset of conductivity can be attributed to laser-induced oxygenation and disintegration of the fullerene. Irradiated by 40 ns laser pulses with different fluence, products with different microstructure were observed. At lower fluence, the Raman features of microcrystalline graphite and fullerene polymer were observed. At a fluence just below the ablation threshold (36 mJ/cm²), the fullerene molecules in the film were disintegrated completely and transformed to amorphous graphite.     

UV laser-induced grating formation in PDMS thin films

Excimer laser (193 nm and 157 nm) induced ablation and structure formation in poly-dimethylsiloxane (PDMS) thin films is demonstrated. Ellipsometric measurements provide values of the optical constants of the films as well as their thicknesses, which are below 1 m. At fluences above 160 mJ/cm² two pulses of UV light induce gratings with at minimum 1-m periods and crossed gratings with 4-m periods. The structure heights are between 10 nm and 20 nm with ridge widths of several hundred nanometres. The ablation occurs after a single incubation pulse with a threshold that increases logarithmically with the ablation wavelength increasing from 157 nm to 1064 nm. At 193 nm the ablation rate for 2 J/cm² is 127 nm/pulse. PACS 79.20.La; 34.50.Dy; 68.55.Jk     

Comparison of the transmission behavior of a triazeno-polymer with a theoretical model

The threshold fluence,F _Th, of ablation of a triazeno-polymer was measured in the low fluence range for thin films using conventional UV-spectroscopy. It was found that there is a clearly definedF _Th for 308 nm irradiation between 20 and 25 mJ cm^–2. In the case of 248 nm irradiation, a threshold fluence range between 16 and 32 MJ cm^–2 was found. The ablation rate for both irradiation wavelengths depends on film-thickness. For the XeCl excimer-laser, the point at which the rate becomes independent of thickness was observed to lie at a value which did not correspond to the calculated laser penetration depth, whereas for the KrF laser the independence was not reached within the applied thickness range (up to 0.35 m). Additional transmission measurements have been performed showing that the target transmission at 248 nm increases only slightly, whereas for 308 nm the transmission increases by a factor of approximately 4. This result shows that dynamic target absorption properties are very important for describing the ablation process. The results derived from the transmission studies and etch rates were analyzed theoretically with a two-level model of chromophore absorption. For 248 nm irradiation this model can describe the transmission behavior and the ablation rate. In the case of 308 nm irradiation, it was only possible to match one data set. A good agreement with the experimental transmission ratio does not match the ablation rate and vice versa.     

Laser fluence, repetition rate and pulse duration effects on paint ablation

The efficiency (mm³/(J pulse)) of laser ablation of paint was investigated with nanosecond pulsed Nd:YAG lasers (λ = 532 nm) as a function of the following laser beam parameters: pulse repetition rate (1-10,000 Hz), laser fluence (0.1-5 J/cm²) and pulse duration (5 ns and 100 ns). In our study, the best ablation efficiency (η ≅ 0.3 mm³/J) was obtained with the highest repetition rate (10 kHz) at the fluence F = 1.5 J/cm². This ablation efficiency can be associated with heat accumulation at high repetition rate, which leads to the ablation threshold decrease. Despite the low thermal diffusivity and the low optical absorption of the paint (thermal confinement regime), the ablation threshold fluence was found to depend on the pulse duration. At high laser fluence, the ablation efficiency was lower for 5 ns pulse duration than for the one of 100 ns. This difference in efficiency is probably due to a high absorption of the laser beam by the ejected matter or the plasma at high laser intensity. Accumulation of particles at high repetition rate laser ablation and surface shielding was studied by high speed imaging.     

XRD studies on the femtosecond laser ablated single-crystal germanium in air

Ultrashort laser ablation of single-crystal germanium has been performed in air with femtosecond laser pulses (150 fs, 1 kHz) of 810 nm in the laser fluence range of 0.7–35.4 J/cm². Ablation depth dependence on the laser fluence shows that there are two different processes, which are explained in terms of electronic heating process and the optical penetration one. Structure of ablated region is characterized by means of two different XRD techniques. With increasing the laser fluence higher than 10.2 J/cm², the laser-processed region of germanium exhibits poly-crystalline diffraction peaks in a wide-angle (θ/2θ) scan and a split of diffraction peak of (4 0 0) plane in the rocking curve, which are absent in the lower laser fluence. These observations could be explained in terms of structural changes induced by ultrashort laser irradiation at the higher laser fluence.     

Precise laser ablation processing of black widow spider silk

Contact-free precise laser processing of black widow spider (Latrodectus hesperus) dragline silk by laser ablation at =157 nm is achieved. At this wavelength, the small optical penetration depth, below 100 nm, allows efficient and gentle material removal above the ablation threshold of _th=29 mJ/cm². The ablation rate in nm/pulse is measured against laser fluence and simultaneously calibrated with ultrapure polymethylmethacrylate (PMMA). Ripple formation in fiber ablation can be overcome by a suitable combination of ablation removal and laser polishing steps using exposure sequences at different irradiation angles , such as vertical at 0° followed by oblique irradiation at 70°. In this way ripples are destroyed until the fiber is automatically smoothed over the entire laser-exposed length. This allows precise laser ablation processing of spider silk fibers and other highly absorbing materials without affecting the bulk mechanical, and other material, properties. PACS 61.41.+e; 61.46.+w; 61.80.Ba; 61.82.Pv; 62.25.+g     

Single and multiple shot near-infrared femtosecond laser pulse ablation thresholds of copper

The single-shot ablation threshold and incubation coefficient of copper were investigated using an amplified near-infrared, femtosecond Ti:sapphire laser. To date, the near-infrared femtosecond ablation threshold of copper has been reported in the range of several hundred millijoules per cm² based primarily on multiple shot ablation studies. A careful study of the single shot ablation threshold for copper was carried out yielding an incident single-shot ablation threshold of (1.06±0.12) J/cm² for a clean copper foil surface. This was determined by measuring the diameters of the ablation spots as a function of the laser pulse energy using scanning electron microscopy for spatially Gaussian laser spots. When multiple shots were taken on the same spot, a reduction in ablation threshold was observed, consistent with a multiple shot incubation coefficient of 0.76±0.02. Similar experiments on 250 nm and 500 nm copper thin films sputtered on a silicon substrate demonstrated that scaling the threshold values with the absorbance of energy at the surface yields a consistent absorbed fluence threshold for copper of (59±10) mJ/cm². This absorbed threshold value is consistent with the expected value from a two-temperature model for the heating of copper with an electron-lattice coupling constant of g=10¹⁷ Wm^-3 K^-1. Single-shot rippling of the surface in the threshold ablation intensity regime was also observed for the foil target but not for the smooth thin film target. PACS 61.80.Ba; 61.82.Bg     

Spot-size dependence of the ablation threshold in dielectrics for femtosecond laser pulses

The multi-pulse ablation threshold of barium borosilicate glass was measured using 30-fs pulses of a high repetition rate (1 kHz) laser system. The threshold fluence was found to decrease with increasing beam radius ranging from 20 to 400 m. Two existing models are applied by considering thermal accumulation and point defects, respectively . PACS 42.62.C; 44.10.+i; 77.22.Jp; 77.84.Bw; 79.20.D     

Non-Thermal Laser Ablation Model for Micro-Surgical Applications

We have developed a non-thermal laser ablation model which may reduce thermal damage to neighboring structures. Based on this model, the three critical parameters for a well controlled non-thermal microsurgery are (1) the laser wavelength with its photon energy matching closely the bond dissociation energy, (2) the energy fluence must be above threshold to avoid thermal process due to non-radiative relaxation from the excited electronic states to vibrational, (3) ultra short laser pulses (few fs) to completely eliminate thermal and direct biomolecular reactions. In this model the UV laser photon dissociates the molecular bonds which leads to the splitting of longer polymer chains into small fragments. The excess energy if any may appear as kinetic energy in the polymer-fragments. The extreme rapidity of the bond breaking process reduces heat conduction. The model establishes a relationship between ablation depth per pulse, the absorption coefficient, the incident laser energy fluence, and the threshold energy fluence. The ablation depths per pulse were calculated for the polymers Polymethyl methacrylate (PMMA) and polyimide for various commercially available UV lasers. It has been found that the minimum ablations depth occurs at 193 nm for both PMMA and polyimide. This assures a well defined incision with minimal thermal damage to the surrounding structures at this wavelength. There exists a definite threshold energy fluence for non-thermal ablation for any given biomolecule and below the threshold the non-radiative relaxation process may cause thermal ablation. New ultra fast lasers (few femtoseconds) (fs) will completely eliminate thermal diffusion as well as direct biomolecular reactions.