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1.
The anisotropy of the ionic conductivity and permittivity of (1) BaR2F8 (R=rare earth element) single crystals with monoclinic BaTm2F8 structure and of (2) (β-YF3 structured) rare earth trifluorides is studied. Single crystals, eutectic composites and ceramics are investigated in a broad temperature range. In the monoclinic BaR2F8 crystals, a pronounced anisotropy of the ionic conductivity and a slight anisotropy of the permittivity are found. The fastest ionic transport with the lowest activation energy (0.563 eV) and the highest value of the permittivity are observed along thea axis. The temperature dependencies of the fluoride ion conductivities of various orthorhombic rare earth trifluorides differ only slightly from one another. For the bulky single crystals, the conductivity at 500 °C and the conduction activation enthalpy are equal to 1.1(4)×10−5 S/cm and 0.75(3) eV, respectively. The ionic conductivity is almost isotropic, but the anisotropy of the permittivity is significant. For the fluorides of both structural types, plausible conduction mechanisms are proposed, networks of most probable conduction paths are presented and the origin of the observed anisotropy of the ionic conductivity is elucidated. Paper presented at the 4th Euroconference on Solid State Ionics, Renvyle, Galway, Ireland, Sept. 13–19, 1997  相似文献   

2.
S. Bredikhin 《Ionics》2000,6(1-2):78-85
The phenomena of the reversible transformation of concentration and a structure of luminescence centers and of the concentration of mobile silver ions in local irradiated region of RbAg4I5 superionic crystals are studied. A new effect of illumination on ionic conductivity and activation energy of migration of mobile Ag+ cations in RbAg4I5 superionic crystals are observed. Reversible changes in the ionic conductivity due to illumination of superionic crystals are caused by reversible change in the structure of electronic centers caused by elastic strain around these centers. The effect of elastic deformation on the process of ionic transport and activation energy for diffusion of mobile silver cations are studied. Photostimulated recovery of the ionic conductivity after its change due to preliminary illumination of a RbAg4I5 superionic crystal with light of wavelength λ=430 nm are detected. This recovery of the ionic conductivity is due to excitation of centers in complexes generated by previous illumination of tested samples.  相似文献   

3.
The growth of whiskers inside and on the surface of superionic crystals (AgI, CuI, RbAg4I5) is considered. The crystals are exposed to radiations with different spectral compositions at temperatures above and below the temperature of the superionic phase transition. The chemical composition, structure, and properties of whiskers are studied with optical microscopy, scanning electron microscopy, transmission electron microscopy, and photoluminescence. The mechanisms of photostimulated growth of whiskers in semiconductors with a high ionic conductivity are discussed, and the role of the “molten” cation sublattice during nucleation and growth of whiskers is considered.  相似文献   

4.
The effect of the different cooling processes on the disorder of flourine ions and ionic conductivity in β-PbF2 has been studied by X-ray method and ionic conductivity measurements on single crystals below the transition temperature Tc. The spike-like diffuse scattering was observed along the <111>1 directions around the Bragg reflections. The activation energies for the conduction process are 0.40 eV for the sample quenched from 970 K and 0.54 eV for the one from 720 K. The higher the quenching temperature is, the higher the conductivity and the lower the activation energy become. The dependence of conductivity on the different cooling processes is more evident in single crystals than in polycrystalline samples. The contribution of the different cooling processes to ionic conductivity can be quantitatively explained by the extent of ordering of mobile fluorine ions. Time dependence of ionic conductivity has not been observed.  相似文献   

5.
The temperature dependence of the dark conductivity in a series of doped and nominally undoped LiNbO3 crystals of congruent composition is studied. The activation energies for the ionic and electronic contributions to the dark conductivity are determined, and the H+, ion diffusion coefficient is estimated. The correlation between the ionic and electronic contributions to the dark conductivity is established.  相似文献   

6.
A new effect of illumination on ionic conductivity and activation energy of migration of mobile Ag+ cations in RbAg4I5 superionic crystals has been detected and studied. Reversible changes in the ionic conductivity due to illumination of superionic crystals are caused by reversible changes in the structure of electronic centers caused by elastic strain around these centers. The effect of elastic deformation on the process of ionic transport and activation energy for diffusion of mobile silver cations has been studied. Photostimulated recovery of the ionic conductivity after its change due to preliminary illumination of a RbAg4I5 superionic crystal with light of wavelength λ≃430 nm has been detected. This recovery of the ionic conductivity is due to excitation of centers in complexes generated by previous illumination of tested samples. Zh. éksp. Teor. Fiz. 112, 698–706 (August 1997)  相似文献   

7.
Lithium ionic conductivity of Li3N single crystals is reported for temperatures from 120 K to 350 K. The intrinsic ionic conductivity is rather small (< 10?6 Ω?1 cm?1 at 300 K) and shows no strong anisotropy. The activation energy is near 0,6 eV. It is shown that hydrogen is the critical impurity in the crystals grown and studied at this laboratory. The relative impurity concentration is determined from infrared transmission measurements near 3130 cm?1. An estimate for absolute values is obtained from dielectric studies. Increases in ionic conductivity with hydrogen doping by a factor 5000 are reported for E⊥c but no significant effects are found for E6c. The proposed defect is an impurity-vacancy complex consisting of an NH?? and a lithium vacancy.  相似文献   

8.
The luminescence and ionic conductivity of pure and doped BaFCl crystals are reported. The ionic conductivity occurs mainly via chloride ion vacancies, whereas the efficient, yellow luminescence is ascribed to oxygen impurities (OF).  相似文献   

9.

The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF2, BaF2, LiBaF3 and KBr crystals were investigated above 290 K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF2, BaF2, LiBaF3 and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal show that above 290 K the TSR processes are initiated and controlled by the ionic defect thermal detrapping, migration and interaction with the localised electronic and ionic charges and colour centres. The ion diffusion-controlled TSR processes take place in the above halide crystals.  相似文献   

10.
Electrochemical studies have been made of the kinetics and thermodynamics of lithium intercalation into single crystals of NiPS3. Effective diffusion coefficients for lithium in this layered compound were found to be higher than previously reported for powdered NiPS3 cathodes, and very much higher than expected from previous nmr studies. Despite considerable electron transfer in Li+xNiPSx-3, the electronic conductivity does not approach metallic values until x 1.4. The transition to a previously described state of high ionic conductivity is discussed.  相似文献   

11.
《Solid State Ionics》1988,31(1):27-30
dc ionic conductivity has been studied on single crystals of RbNO3 grown by slow evaporation method. The range of temperature covered is from room temperature to its melting point atmospheric pressure. An attempt is made to correlate the known phase transitions with the variation of ionic conductivity with temperature.  相似文献   

12.
The high frequency ionic conductivity of RbAg4I5 single crystals was measured in the range from 0.1 MHz to 8 GHz using a microwave reflection method. In the whole temperature region studied (30°C to 135°C) the bulk conductivity was found to be frequency independent and to coincide with the latest published values for the static conductivity. This result is in contradiction with values reported formerly in literature but agrees very well with recent measurements on the structurally similar solid electrolyte AgI.  相似文献   

13.
A model of mixed (ionic and hole) conductivity in Tl3VS4 crystals at close-to-room temperatures is proposed. The significant fraction of the ionic conductivity component (~70% of the total conductivity) is explained by the nonstoichiometric electrically active thallium vacancies, whose acceptor levels provide p-type conductivity. The characteristic time dependence of the voltage developing across a sample due to its polarization and depolarization is described using the diffusion theory of mixed conductivity previously developed by Yokota. The charge transport phenomena in Tl3VS4 are studied experimentally, and the data are processed according to the theoretical model.  相似文献   

14.
Ferroelectric domain structures formed by an electron beam in lithium niobate crystals are studied using low-voltage SEM microscopy. The structures are formed in crystals with different conductivity, including samples with high-resistance congruent composition (CLN) and samples with conductivity increased by reductive annealing (RLN). The potential nature of the contrast of the domain structures observed in the secondary electron mode depending on the conductivity of the samples and the direction of spontaneous polarization of the domains is analyzed. It is assumed that the domain contrast in CLN crystals is associated with long-lived charges localized near domain walls and in the irradiated areas. The recorded domain structures in the CLN crystals are visualized on polar and nonpolar cuts. In the RLN crystals with improved conductivity compared to CLN, the potential contrast of the periodic domain structures is found only on the polar cuts, where vector Ps of the domains is perpendicular to the irradiated surface. This contrast is likely because the field of the spontaneous electric polarization charges influences the secondary electrons.  相似文献   

15.
王君君  龚静  宫振丽  闫晓丽  高舒  王波 《物理学报》2011,60(12):127803-127803
以聚氧化乙烯(PEO)为基质,成功制备出纳米ZnO掺杂的(PEO)8-ZnO-LiClO4离子导电聚合物电解质,并利用多种实验技术,包括扫描电子显微镜、X射线衍射(XRD)、傅里叶变换红外光谱和正电子湮没寿命谱(PALS),系统地研究了纳米ZnO与基质间相互作用及其对聚合物链段运动、纳米尺度自由体积、离子输运和复合电解质电导率的影响.实验结果发现,纳米ZnO的掺杂使聚合物电解质的离子电导率得到了大幅度提高,当ZnO与PEO质量比为6%时达到最大,(PEO)8-ZnO-LiClO4的电导率为1.82×10-4 S ·cm-1,比(PEO)8-LiClO4的电导率(6.58×10-5 S ·cm-1)提高了大约一个数量级.XRD结果显示,纳米ZnO的加入降低了PEO的结晶性,增加了锂离子传输的非晶相,从而提高了电导率.离散PALS测量结果表明,随着纳米ZnO的加入,复合电解质的自由体积、浓度和相对自由体积分数fr均增加.连续PALS分析揭示了自由体积的分布由一个峰劈裂成两个峰,表明纳米ZnO的掺杂对聚合物的微结构有很大影响.基于实验测量的fr和离子电导率,研究了离子导电机理.研究发现, fr与电导率之间存在一个直接关系,即fr越大,越有利于锂离子的传输,导致电导率越大.这个结果支持聚合物电解质导电的自由体积理论. 关键词: 正电子湮没寿命谱 聚合物纳米复合电解质 离子电导率 自由体积  相似文献   

16.
Investigation results of dielectric and ultrasonic properties of layered CuInP2S6 crystals are presented. At low frequencies, dielectric spectra are highly influenced by the high ionic conductivity with the activation energy of 7357.4?K (0.635?eV). The high-frequency part of the spectra is determined by relaxational soft mode. The critical slowing down and Debye-type dispersion show the order–disorder type of the phase transition. The temperature dependence of the relaxational soft mode and dielectric contribution show a quasi-one-dimensional behaviour. Ultrasonic velocity exhibits critical slowing down which is accompanied by attenuation peaks in the phase transition region. Layered CuInP2S6 crystals have extremely large elastic nonlinearity in the direction perpendicular to layers. The nonlinear elastic parameters substantially increases at the PT temperature.  相似文献   

17.
The superionic conductivity and dielectric response of heavily doped fluorite-structured Ba1−xRxF2+x (R=La, Pr, Nd, Gd, Tb, Y, Sc; x=0.005–0.45) crystals are reported. The highest ionic conductivity is found for R=Sc and x=0.1. Upon ScF3 doping, small Sc3+ ions rearrange their surroundings, create excessive fluoride interstitial ions and bring about a high ionic conductivity. For each dopant, the concentration dependence of the ionic conductivity is non-linear. A monotonous concentration dependence of the ionic conductivity is found only for La3+ doping. Upon doping with Nd3+, Gd3+, Tb3+, Y3+ and Sc3+ ions, a conductivity maximum is observed at x=0.1–0.2. Upon Pr3+ doping, this maximum is split. The influence of defect clustering on the concentration dependence of the conductivity is discussed. Paper presented at the 6th Euroconference on Solid State Ionics, Cetraro, Calabria, Italy, Sept. 12–19, 1999.  相似文献   

18.
Data are presented from an experimental investigation of physical properties (paramagnetic susceptibility, electrical conductivity, Hall coefficient) and their temperature dependence in alloys (Co1?xNix)5Ge3, where 0≤x≤1, crystallized in the filled nickel arsenide type. Data obtained are used to define the zone structure of the electron energy spectrum in these crystals, which is based initially on theoretical group analysis with use of Goodenough's concept. It is shown that upon change in external parameters (electron concentration, temperature) shifting of zones relative to each other occurs.  相似文献   

19.
Impedance measurements have been carried out on four members of the system LiAlSiO4SiO2. The conductivity was determined on single crystals as a function of temperature frequency and crystal orientation. The activation energy for the ionic motion was found to be independent of the crystal orientation; the electrolyte conductivity proved to be more sensitive to the structural state of the sample than to its chemical composition.  相似文献   

20.
β-PbF2 is an extrinsic n-type semiconductor at temperatures below 300 K. The contribution of lattice defects to the electrical conductivity increases rapidly above room temperature. Polarization studies using a Wagner-cell indicate that above 350 K ionic conductivity becomes predominant in undoped β-PbF2 crystals.  相似文献   

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