Electronic structure of A15-type compounds: V<Subscript>3</Subscript>Co,V<Subscript>3</Subscript>Rh,V<Subscript>3</Subscript>Ir and V<Subscript>3</Subscript>Os

Band structure and Fermi surfaces of the A₃B compounds V₃Co, V₃Rh, V₃Ir and V₃Os are calculated in FP-LAPW calculations. From V₃Co to the V₃Os compound one observes a decrease of the overlap for d-states from both V and B atoms; the center of gravity of the d-band for V moves upwards, while for the B-atom it moves toward lower energies. Hence, despite the band widening, a weakening of interactions takes place throughout this series, which leads to a lattice expansion as experimentally observed. The bonding mechanism in these compounds is found to be dominated by the lower energy d-states. Comparatively, the DOS at E_F does not change appreciably between these compounds, except for V₃Os, where a sharp peak is observed at E_F. This feature leads to the highest electronic heat-capacity coefficient γ (2.31 ) in this compound, which otherwise possesses the smallest Bulk modulus (209.05 GPa). In V₃Os, for whom no report has been found, a stronger admixture between p-states from both metals near E_F is observed, and the Os d-states form a common d-band with the V d-states between 0.4–0.6 Ry. A stronger s–s hybridization is observed for V₃Co, which is in the source of the fact that this compound has an anomalously large quadrupole interaction and exhibits a positive Knight shift.     

Specific features of the electronic structure of the CeCu<Subscript>6</Subscript>, CePd<Subscript>3</Subscript>, CeSi<Subscript>2</Subscript>, and CeF<Subscript>3</Subscript> systems

The electronic structure of cerium systems, the hybridization of 4 f and outer-shell electrons, and the influence of the position of the localized 4 f level with respect to the Fermi level E _F in the conduction band have been investigated. The CeCu₆, CePd₃, CeSi₂, and CeF₃ systems have been studied using X-ray photoelectron spectroscopy. The densities of states have been calculated by the tight-binding linearized muffin-tin orbital method within the atomic sphere approximation, which takes into account the covalent character of bonds and the nonspherical distribution of the electron density. The results obtained from the calculations of the total density of states are in good agreement with the valence band X-ray photoelectron data for the systems under investigation. It has been shown that the differences in the properties of the cerium systems are determined by the specific features of their electronic structure. A strong interatomic interaction is characteristic of heavy-fermion systems.     

Electronic structure of half-metallic ferromagnet Co<Subscript>2</Subscript>MnSi at high-pressure

In this study, first principles calculation results of the half-metallic ferromagnetic Heusler compound Co₂MnSi are presented. All calculations are based on the spin-polarized generalized gradient approximation (σ-GGA) of the density functional theory and ultrasoft pseudopotentials with plane wave basis. Electronic structure of related compound in cubic L2₁ structure is investigated up to 95 GPa uniform hydrostatic pressure. The half-metal to metal transition was observed around ~70 GPa together with downward shift of the conduction band minimum (CBM) and a linear increase of direct band gap of minority spins at Γ-point with increasing pressure. The electronic density of states of minority spins at Fermi level, which are mainly due to the cobalt atoms, become remarkable with increasing pressure resulting a sharp decrease in spin polarization ratio. It can be stated that the pressure affects minority spin states rather than that of majority spins and lead to a slight reconstruction of minority spin states which lie below the Fermi level. In particular, energy band gap of minority spin states in equilibrium structure is obviously not destroyed, but the Fermi level is shifted outside the gap.     

Electronic structure,ferroelectricity and optical properties of CaBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript>

Using first-principles calculations based on density-functional theory in its local-density approximation, we investigated the Electronic structure, ferroelectricity and optical properties of CaBi₂Ta₂O₉ (CBT) for the first time. It is found that CBT compound has an indirect band gap of 3.114 eV and the O 2s and 2p states are strongly hybridized with the 6s states of Bi which belong to the (Bi₂O₂)²⁺ planes. The quite strong Ta–O and Bi–O hybridization is the primary source for ferroelectricity. Our results imply that the interaction between Bi and O is highly covalent. The anisotropy occurs mainly above 4 eV in the optical properties. The different optical properties have been discussed.     

Rotational excitation of CH<Subscript>4</Subscript> by He atoms

Quantum close-coupling and coupled-state approximation scattering calculations for rotational energy transfer of rotationally excited CH₄ due to collisions with He are presented for collision energies between 10⁻⁷ and 3000 cm⁻¹ using the MP4 potential of Calderoni et al. [J. Chem. Phys. 121, 8261 (2004)]. State-to-state cross sections and rate coefficients from selected initial rotational states of CH₄ in symmetries A, E, and F are studied from the ultra-cold to the thermal regime. Comparison of the cross sections with available theoretical results and experimental data show good agreement. Applications to astrophysics and cold laboratory environments are briefly addressed.     

Magnetotransport properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> with different grain sizes

The magnetotransport and magnetoresistive (MR) properties of manganese-based La_0.67Ca_0.33MnO₃ perovskite with different grain sizes are reported. The electrical resistivity was measured as a function of temperature in magnetic fields of 0.5 and 1 T. The insulator–metal transition temperature, T _IM, shifted to a higher temperature with the application of the magnetic field. In zero field, T _IM is almost constant (∼271 K) for all samples except for the sample with the largest grain size, where T _IM=265 K. The temperature dependence of resistivity was fitted with several equations in the metallic (ferromagnetic) region and the insulating (paramagnetic) region. The density of states at the Fermi level, N(E _F), and the activation energy of electron hopping were estimated by fitting the resistivity versus temperature curves. The ρ–T ² curves are nearly linear in the metallic regime, but the ρ–T ^2.5 curves exhibit a deviation from linearity. The variable range hopping model and small polaron hopping model fit the data well in the high-temperature region, indicating the existence of the Jahn–Teller distortion that localizes the charge carriers. MR was found to increase with an increase in the magnetic field, an effect which is attributed to the intergrain spin tunneling effect.     

Effect of hydrostatic compression on the indium-impurity-induced superconducting transition in Pb<Subscript>0.3</Subscript>Sn<Subscript>0.7</Subscript>Te

This paper reports on a study of the low-temperature conductivity and parameters of the superconducting state, namely, the critical temperature T _c and the second critical magnetic field H_c2, in the (Pb_0.3Sn_0.7)_0.95In_0.05Te solid solution under hydrostatic pressure P ≤ 9 kbar at T = 4.2 K. The choice of this material has been motivated by the fact that, according to earlier observations, it undergoes a superconducting transition at T _c ∼ 2.3 K, i.e., close to the maximum value T _c ∼ 2.9 K found for the (Pb _z Sn_{1 − z} )_0.95In_0.05Te solid solutions with a lead content z ∼ 0.15–0.25. It has been demonstrated that an increase in the pressure to P ≤ 9 kbar leads to a bell-shaped dependence T _c (P). The observed dependences are assigned to the effect of hydrostatic compression on the band structure of the solid solution and indicate a shift in the position of the Fermi level E _F with increasing pressure within the impurity band of the In quasi-local states. In this case, E _F passes through a maximum in the density of impurity states at P = 3–5 kbar.     

First principle calculation of accurate native defect levels in CaF<Subscript>2</Subscript>

We report on the first principle density functional calculation of the charge transition levels of native defects (vacancies and interstitials) in CaF₂ structure. The transition level was defined as the Fermi level where two charge states of given defect have the same formation energy. The common error in the band gap inherited to semiclocal density functional has been accounted for by incorporating the hybrid density functional method, leading to correct placement of the transition levels within the band gap. The band gap size from hybrid calculation has been validated using the full potential, Linearized Augmented Planewave method with the Modified-Becke-Johnson exchange potential. Prior to level calculations, we ensured that an agreement between the formation energies from small (95–97 atoms) and large (323–325 atoms) supercells was achieved after applying the Makov-Payne correction method. Our calculated transition level for the anion vacancy was 2.97 eV below the conduction band, agreeing with the experimental optical absorption band at 3.3 eV associated with the electron transition from the ground state F-center to the conduction band in CaF₂.     

Metal-insulator transition in the low-dimensional organic conductor (TMTSF)<Subscript>2</Subscript>FSO<Subscript>3</Subscript> probed by infrared microspectroscopy

We present measurements of the infrared response of the quasi-one-dimensional organic conductor (TMTSF)₂FSO₃ along (E ) and perpendicular (E ) to the stacking axis as a function of temperature. Above the metal-insulator transition related to the anion ordering the optical conductivity spectra show a Drude-like response. Below the transition an energy gap of about 1500 cm^-1 (185 meV) opens, leading to the corresponding charge transfer band in the optical conductivity spectra. The analysis of the infrared-active vibrations gives evidence for the long-range crystal structure modulation below the transition temperature and for the short-range order fluctuations of the lattice modulation above the transition temperature. We also report about a new infrared mode at around 710 cm-1 with a peculiar temperature behavior, which has so far not been observed in any other (TMTSF)₂X salt showing a metal-insulator transition. A qualitative model based on the coupling between the TMTSF molecule vibration and the reorientation of electrical dipole moment of the FSO₃ anion is proposed, in order to explain the anomalous behavior of this new mode.     

First principles study of structural,magnetic and electronic properties of half-metallic CrO<Subscript>2</Subscript> under pressure

A first-principles tight-binding linear muffin tin orbital (TB-LMTO) method within the local-density approximation is used to calculate the total energy, lattice parameter, bulk modulus, magnetic moment, density of states and energy band structures of half-metallic CrO₂ at ambient as well as at high pressure. The magnetic and structural stabilities are determined from the total energy calculations. From the present study we predict a magnetic transition from ferromagnetic (FM) state to a non-magnetic (NM) state at 65 GPa, which is of second order in nature. We also observe from our calculations that CrO₂ is more stable in tetragonal phase (rutile-type) at ambient conditions and undergoes a transition to an orthorhombic structure (CaCl₂-type) at 9.6 GPa, which is in good agreement with the experimental results. We predict a second structural phase transition from CaCl₂- to fluorite-type structure at 89.6 GPa with a volume collapse of 7.3%, which is yet to be confirmed experimentally. Interestingly, CrO₂ shows half metallicity under ambient conditions. After the first structural phase transition from tetragonal to orthorhombic, half metallicity has been retained in CrO₂ and it vanishes at a pressure of 41.6 GPa. Ferromagnetism is quenched at a pressure of 65 GPa.     

First-principles electronic-structure calculation on the spin distribution and the half-metallic properties of the mixed valence iron compound Ba2F2Fe1.5S3

The first principles within the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA) approach were applied to study the new mixed valence compound Ba₂F₂Fe_1.5S₃. The density of states, the electronic band structure and the spin magnetic moment are calculated. The calculations reveal that the compound has an antiferromagnetic interaction between the Fe^III and Fe^II ions arising from the bridging S atoms, which validate the experimental assumptions that there is a low-dimensional antiferromagnetic interaction in Ba₂F₂Fe_1.5S₃. The spin magnetic moment mainly comes from the Fe^III and Fe^II ions with smaller contribution from S anion. By analysis of the band structure, we find that the compound has half-metallic property.     

Luminescence and electronic excitations in KBe<Subscript>2</Subscript>BO<Subscript>3</Subscript>F<Subscript>2</Subscript> crystals

This paper reports on a study of the dynamics of electronic excitations in KBe₂BO₃F₂ (KBBF) crystals by low-temperature luminescent vacuum ultraviolet spectroscopy with nanosecond time resolution under photoexcitation by synchrotron radiation. The first data have been obtained on the kinetics of photoluminescence (PL) decay, time-resolved PL spectra, time-resolved PL excitation spectra, and reflection spectra at 7 K; the estimation has been performed for the band gap E _g = 10.6−11.0 eV; the predominantly excitonic mechanism for PL excitation at 3.88 eV has been identified; and defect luminescence bands at 3.03 and 4.30 eV have been revealed. The channels of generation and decay of electronic excitations in KBBF crystals have been discussed.     

Theoretical Study of the Structural,Electronic, Chemical Bonding and Optical Properties of the A2<Subscript>1</Subscript><Emphasis Type="Italic">am</Emphasis> Orthorhombic SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript>

The structural parameters, density of states, electronic band structure, charge density, and optical properties of orthorhombic SrBi₂Ta₂O₉ have been investigated using the plane-wave ultrasoft pseudopotential technique based on the first-principle density functional theory (DFT). The calculated structural parameters were in agreement with the previous theoretical and experimental data. The band structure showed an indirect (S to Γ) band gap with 2.071 eV. The chemical bonding along with population analysis has been studied. The complex dielectric function, refractive index, and extinction coefficient were calculated to understand the optical properties of this compound, which showed an optical anisotropy in the components of polarization directions (100), (010), and (001).     

Level structures in the <Stack><Subscript>49</Subscript><Superscript>107</Superscript></Stack>In nucleus and their microscopic description

Excited states of the ₄₉¹⁰⁷In nucleus were populated through the ⁷⁸Se ( ³²S , p2n) fusion-evaporation reaction at beam energy, E _lab = 125 MeV. The de-excitations were studied using in-beam g \gamma -ray spectroscopic techniques involving the Compton-suppressed clover detector array. The level scheme of ¹⁰⁷In consisting of about seven bands is established up to spin ∼ 45/2ℏ with the addition of 25 new transitions. Spins and parities of various levels have been assigned through the DCO and polarization measurements. The level structures observed in ¹⁰⁷In have been interpreted in the framework of a microscopic theory based on the deformed Hartree-Fock (HF) and angular-momentum projection techniques. Various bands are reproduced in band mixing calculations with the configurations involving high-W \Omega p \pi g _9/2 and n \nu d _5/2 orbits, and low-W \Omega p \pi g _7/2 , n \nu g _7/2 and n \nu h _11/2 orbits.     

Interfacial properties of Ce<Subscript>0.75</Subscript>Zr<Subscript>0.25</Subscript>O<Subscript>2</Subscript> supported noble metals (Pd,Pt) from first principles

First-principles electronic structure calculations of noble metals (NM=Pd, Pt)/Ce_0.75Zr_0.25O₂ systems are presented. It is found that: the NM adatoms do not prefer to stay at the atop or the bridge sites of the cations (Ce and Zr), but prefer to be adsorbed at or around the anion sites. The most preferable adsorption sites for both the Pd and Pt adatoms are the O-bridge sites neighboring the Zr dopant. The Pt adatom show much stronger interaction with the Ce_0.75Zr_0.25O₂(111) surface than does the Pd adatom. The interactions of the NM/Ce_0.75Zr_0.25O₂(111) interfaces are stronger than those of the corresponding NM/ceria(111) interfaces. There are some metal induced gap states (MIGS) appeared in the gaps of the NM/Ce_0.75Zr_0.25O₂(111) interfaces, which are important to catalytic properties of the NM/Ce_0.75Zr_0.25O₂(111) catalysts.     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

DFT study of BaTiO<Subscript>3</Subscript> (001) surface with O and O<Subscript>2</Subscript> adsorption

Progress of scanning tunneling microscopy (STM) allowed to handle various molecules adsorbed on a given surface. New concepts emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale is thus particularly invaluable. In this work, within the framework of density functional theory (DFT), we present an electronic and structural ab initio study of a BaTiO₃ (001) surface (perovskite structure) in its paraelectric phase. As far as we know the atomic and molecular adsorption of oxygen at surface is then analyzed for the first time in the literature. Relaxation is taken into account for several layers. Its analysis for a depth of at least four layers enables us to conclude that a reasonable approximation for a BaTiO₃ (001) surface is provided with a slab made up of nine plans. The relative stability of two possible terminations is considered. By using a kinetic energy cut off of 400 eV, we found that a surface with BaO termination is more stable than with TiO₂ termination. Consequently, a surface with BaO termination was chosen to adsorb either O atom or O₂ molecule and the corresponding calculations were performed with a coverage 1 on a (1×1) cell. A series of cases with O₂ molecule adsorbed in various geometrical configurations are also analyzed. For O₂, the most favorable adsorption is obtained when the molecule is placed horizontally, with its axis, directed along the Ba-Ba axis and with its centre of gravity located above a Ba atom. The corresponding value of the adsorption energy is -9.70 eV per molecule (-4.85 eV per O atom). The molecule is then rather extended since the O–O distance measures 1.829 ?. By comparison, the adsorption energy of an O atom directly located above a Ba atom is only -3.50 eV. Therefore we are allowed to conclude that the O–O interaction stabilizes atomic adsorption. Also the local densities of states (LDOS) corresponding to various situations are discussed in the present paper. Up to now, we are not aware of experimental data to be compared to our calculated results.     

DFT investigation on the structures and stabilities of exohedral derivatives for D<Subscript>3</Subscript> C<Subscript>32</Subscript> fullerene: C<Subscript>32</Subscript>X<Subscript>n</Subscript> (X = H and Cl)

A systematic investigation of D₃ C₃₂ fullerene and its derivatives C₃₂X_n (X = H and Cl) has been performed using B3LYP/6-31G(d) method based on the density functional theory. The geometry structures, reaction energies, relative stabilities, and electronic properties have been studied. By investigating the possible C₃₂X_n (X = H and Cl) molecules, C₃₂H₂ and C₃₂Cl₂ behave more thermodynamically accessible with respect to other derivatives. The frontier molecular orbitals and electronic density of states calculations of C₃₂X₂ system indicate that H and Cl passivation have less contribution to the electronic structures, but significantly improve the stability of D₃ C₃₂ fullerene. Finally, the ¹³C NMR chemical shifts of C₃₂H₂ and C₃₂Cl₂ have been simulated to provide helpful information for further experiment identification.     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法，对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构，态密度以及分态密度的计算和比较，发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据；而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加，决定带隙宽度的CBM的位置下降，同时VBM的位置上升，从而导致了带隙的变窄，出现了红移现象. 此外，Cd掺杂会使晶胞发生膨胀，这种张应变也是导致Cd     

Cd掺杂纤锌矿ZnO电子结构的第一性原理研究

采用密度泛函理论结合投影缀加波方法,对掺杂Cd导致ZnO禁带宽度下降的机理进行了研究. 通过对掺杂前后电子能带结构,态密度以及分态密度的计算和比较,发现Cd_xZn_1-xO价带顶端(VBM)始终由O-2p占据;而导带顶端(CBM)则由Cd-5s与Zn-4s杂化轨道控制. 随着掺杂浓度的增加,决定带隙宽度的CBM的位置下降,同时VBM的位置上升,从而导致了带隙的变窄,出现了红移现象. 此外,Cd掺杂会使晶胞发生膨胀,这种张应变也是导致Cd 关键词： 密度泛函理论 电子结构 Cd掺杂ZnO