脉冲激光作用下铝靶的层裂

 本文报导波长为1.06 μm脉宽（FWHM）约4 ns的强脉冲激光辐照下，铝靶发生层裂的实验结果。当入射功率密度在2.0×10¹¹~5×10¹¹ W/cm²范围的激光束作用下，厚度为0.1 mm、0.2 mm的靶在超临界条件下发生层裂，层裂厚度分别在(17±6) μm及(35±5) μm范围。文中使用一种简化模型对阈值条件下不同厚度的靶发生层裂时的层裂片厚度作了近似估算，并与已有的实验结果较好地符合。     

Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions

The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap （Shanghai-EBIT） facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10^-19, 4.33×10^-19, 3.59×10^-19, 2.05×10^-19 and 0.98×10^-19 cm^2 eV for He-like to C-like Kr ions, respectively.     

石油醚在流体静高压下的超声声速、衰减、密度和绝热压缩系数

 专门设计了用脉冲-回波-重合法在不同静水压下测量液体声速的装置，并对石油醚在0.1~650 MPa流体静压力范围内测量了其超声声速和衰减系数。还通过测量体积压缩量和质量得到石油醚密度ρ随流体静压力的变化。最后，给出了石油醚的绝热压缩系数β与流体静压力的关系。     

Nonlinear Optical Properties of Novel Polymeric Rare Earth Phthalocyanine Studied Using Picosecond Z-Scan Technique

Three novel tri-dimensional phthalocyanine polymers, with lanthanum （LaPPc）, gadolinium （GdPPc） and ytterbium （YbPPc） as centric atoms, have been synthesized from a tetranuclear phthalonitrile. Third-order optical nonlinearities of these compounds in DMF solution are measured by a picosecond Z-sacn technique at 532 nm. It is found that all the compounds show reverse saturation absorption and nonlinear self-focus refraction effect. The second-order molecular hyperpolarizabilities are calculated to be 1.82×10^-23, 1.48×10^-23 and 1.45×10^-23 esu for LaPPc, GdPPc and YbPPc, respectively. The differences among their nonlinear optical properties are attributed to the special tri-dimensional structure and the variation in rare earth atoms.     

Comment on `Electronic Properties of Red P-Type Tl2S5 Single Crystals'

Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Tl₂S₅ single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined thevalues of 2.66×10^-41kg and 2.50×10^-41kg, respectively, for the effective masses of electrons and holes in p-type Tl₂S₅, which are about ten orders of magnitude smaller than the free electron mass (9.11×10^-31kg). We argue that the anomalously small values obtained for the effective mass of chargecarriers in Tl₂S₅ have no physical significance.     

Effects of Proton Irradiation on a CMOS Image Sensor

We perform 9 MeV proton irradiation of a complementary metal oxide semiconductor （CMOS） image sensor at doses from 1 × 10^9 to 4 × 10^10 cm^-2. In general, the average brightness of dark output images increases with an increasing dose, and reaches the maximum at 1 × 10^10 cm^-2. The captured colour images become very blurry at 4 × 10^10 cm^-2. These can be explained by change of concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation programme with dose.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric

Deep-trap properties of high-dielectric-constant （k） HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5eV, 1.8 ×10^-16 cm^2 and 1.0 × 10^16 cm^-3, respectively.     

Fluid Sensor Based on Transmission Dip Caused by Mini Stop-Band in Photonic Crystal Slab

We propose a fluid sensor based on transmission dip caused by mini stop-band in photonic crystal slabs. Simulation results show that this novel type of sensors has large detective range （more than 1.5） and relative high sensitivity （4.3×10^-5 in certain conditions）. The central frequency and bandwidth of the mini stop-bands depend on the structure parameters of PC waveguides, which makes it possible to optimize the detective range and detective sensitivity.     

Improvements and New Evaluation of NIM4 Caesium Fountain Clock at NIM in 2005-2006

The NIM4 caesium fountain clock has been operating stably and sub-continually since August 2003. We present our improvements on NIM4 in 2005-06 and the most recent evaluation for its frequency shifts with an uncertainty of 5 × 10^-15. A 203-day comparison between NIM4 and GPS time shows an agreement of 2 × 10^-14. Finally the construction of the NIM5 transportable caesium fountain clock is briefly reported.     

Improvement of Plasticity of Ti-Based Bulk Metallic Glasses by Addition of Nb

Ti-based bulk metallic glasses （Ti40Zr25Cu9NisBe18 ）100-x Nbx with x = 0 to 5 at. % are prepared by copper-mold casting. The glass formation ability is almost unchanged by addition of Nb. The compression plasticity is, however, apparently changed, from 3% at x = 0 to 13% at x = 3, about 330% increases at the strain rate of 1 × 10^-4 8^-1. The increment of the plasticity can be attributed to the segregation of Nb in the area of shear bands during the compression processing. An effective way to increase the plasticity of Ti-based bulk metallic glasses is thus proposed.     

Multilayer Au/TiO2Composite Films with Ultrafast Third-Order Nonlinear Optical Properties

We report on the ultrafast third-order optical nonlinearity in multilayer Au/TiO2 composite films fabricated on quartz substrates by pulsed laser deposition technique. The linear optical properties of the films are determined and optical absorption peaks due to surface plasmon resonance of Au particles are observed at about 590hm. The third-order optical nonlinearities of the films are investigated by z-scan method using a femtosecond laser （50 fs） at the wavelength of 800 nm. The sample showed fast nonlinear optical responses with nonlinear absorption coefficient and nonlinear refractive index being -3.66 × 10^-10 m/W and -2.95 × 10^-17 m^2/W, respectively. The results also show that the nonlinear optical effects increase with the increasing Au concentration in the composite films.     

Estimation of Plasma Density by Surface Plasmons for Surface-Wave Plasmas

An estimation method of plasma density based on surface plasmons theory for surface-wave plasmas is proposed. The number of standing-wave is obtained directly from the discharge image, and the propagation constant is calculated with the trim size of the apparatus in this method, then plasma density can be determined with the value of 9.1 × 10^17m^-3. Plasma density is measured using a Langmuir probe, the value is 8.1 × 10^17m^-3 which is very close to the predicted value of surface plasmons theory. Numerical simulation is used to check the number of standing-wave by the finite-difference time-domain （FDTD） method also. All results are compatible both of theoretical analysis and experimental measurement.     

Effect of Ag Nanoparticles on Optical Properties of R6G Doped PMMA Films

The composite PMMA films containing Ag nanoparticles and rhodamine 6G are prepared. We investigate the fluorescence properties and nonlinear optical properties of R6G/PMMA films influenced by Ag nanoparticles. The fluorescence enhancement factor is about 3.3. The corresponding nonlinear refractive index is measured to be -2.423 ×10^-8 esu using the Z-scan technique, which is much enhanced compared with the R6G/PMMA film. The results indicate that these enhancements are attributed to surface plasmon resonance of Ag nanoparticles.     

Three-Step Growth Optimization of AlN Epilayers by MOCVD

A three-step growth process is developed for depositing high-quality aluminium-nitride （AlN） epilayers on （001） sapphire by low pressure metalorganic chemical vapour deposition （LP-MOCVD）. We adopt a low temperature （LT） A1N nucleation layer （NL）, and two high temperature （HT） A1N layers with different V/Ⅲ ratios. Our results reveal that the optimal NL temperature is 840-880℃, and there exists a proper growth switching from low to high V/Ⅲ ratio for further reducing threading dislocations （TDs）. The screw-type TD density of the optimized AIN film is just 7.86×10^6 cm^-2, about three orders lower than its edge-type one of 2×10^9 cm^-2 estimated by high-resolution x-ray diffraction （HRXRD） and cross-sectional transmission electron microscopy （TEM）.     

Large Storage Window in a-SiNx/nc-Si/a-SiNx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

An a-SiNx/nanocrystalline silicon [（nc-Si）/a-SiNx] sandwiched structure is fabricated in a plasma enhanced chemical vapour deposition （PECVD） system at low temperature （250℃）. The nc-Si layer is fabricated from a hydrogen-diluted silane mixture gas by using a layer-by-layer deposition technique. Atom force microscopy measurement shows that the density of nc-Si is about 2 ×10^11 cm^-2. By the pretreatment of plasma nitridation, low density of interface states and high-quality interface between the Si substrate and a-SiNs insulator layer are obtained. The density of interface state at the midgap is calculated to be 1 ×10^10 cm^-2eV^-1 from the quasistatic and high frequency C - V data. The charging and discharging property of nc-Si quantum dots is studied by capacitance-voltage （C- V） measurement at room temperature. An ultra-large hysteresis is observed in the C - V characteristics, which is attributed to storage of the electrons and holes into the nc-Si dots. The long-term charge-loss process is studied and ascribed to low density of interface states at SiNx/Si substrate.     

三硝基甲苯起爆机理实验研究

 用单脉冲化学激波管实验方法,使用自由基清扫剂和对比速率,测定了邻位和对位硝基甲苯在高温下,裂解瞬间（500 μs） 的化学反应机理,并测定了化学反应速率常数。作为邻位硝基甲苯的同分异构体,对位硝基甲苯的主要裂解通道与其不同。通过实验发现了邻位硝基甲苯的裂解重要通道,测到它的产1氧-2氮-3,4-环丁二稀基异嚙唑（Anthranil） 在瞬间随温度变化生成和很快消失的过程。由此,测得这一化学性质极不稳定的产物的消失速率常数为：k(Anthranil)＝3.7×10¹⁵·exp(－25 800/T) s^-1。分析这一过程的机理,认为第一步是硝基甲苯的裂解,第二步是Anthranil的生成,第三步是Anthranil中的N－O键的断裂。     

AlGaN-Based Solar-Blind Schottky Photodetectors Fabricated on AlN/Sapphire Template

We report AlGaN-based back-illuminated solar-blind Schottky-type ultraviolet photodetectors with the cutoff- wavelength from 280nm to 292nm without bias. The devices show low dark current of 2.1× 10^-6A/cm^2 at the reverse bias of 5 V. The specific detectivity D＊ is estimated to be 3.3 × 10^12cmHz^1/2 W^-1 . To guarantee the performance of the photodetectors, the optimization of AlGaN growth and annealing condition for Schottky contacts were performed. The results show that high-temperature annealing method for Ni/Pt Schottky contacts is effective for the reduction of leakage current.     

Controlled Evolution of Silicon Nanocone Arrays Induced by Ar+ Sputtering at Room Temperature

Controlled evolution of silicon nanocone arrays induced by Ar^＋ sputtering at room temperature, using the coating carbon as a mask, is demonstrated. The investigation of scanning electron microscopy indicates that the morphology of silicon nanostructures can be controlled by adjusting the thickness of the coating carbon film. Increasing the thickness of the coating carbon film from 50-60 nm, 250-300 nm and 750-800 nm to 1500 nm, the morphologies of silicon nanostructures are transformed from smooth surface ripple, coarse surface ripple and surface ripple with densely distributed nanocones to nanocone arrays with a high density of about 1 × 10^9- 2 × 10^9 cm^-2.     

低密度聚氨酯泡沫压缩行为实验研究

 在室温下,对一种低密度硬质聚氨酯泡沫进行了准静态压缩及应变率在1×10³～5×10³ s^-1范围内的冲击压缩实验。结果表明,所测试的聚氨酯泡沫材料在准静态实验与动态实验之间存在明显的应变率效应,但在纯动态实验中应变率效应不明显。最后,给出了以屈服应力、密度、应变等为参量的动态压缩本构关系,且能较好地与材料的动态压缩曲线吻合。