Modifications in track registration response of PADC detector by energetic protons

It has been well established that different ionising radiations modify the track registration properties of dielectric solids. In an effort to study the response of Polyallyl diglycol carbonate (PADC Homalite) detector towards fission fragment, PADC detectors were exposed to 10⁴ Gy dose of 62 MeV protons and then one set of samples were exposed to fission fragments from a ²⁵²Cf source. Two of these detectors were containing a thin layer of Buckminsterfullerene (C₆₀). The study of the etched tracks by Leitz Optical Microscope reveals that the track diameters are enhanced by more than 70% in the proton irradiated zone as compared to that in the unirradiated zone. Scanning Electron Microscopy was performed after etching the sample in 6 N NaOH at 55°C for different etching times, to study the details of the surface modifications due to proton irradiation of PADC detectors with and without C₆₀ layer. Our observations revealed that the diameters and density of proton tracks have increased with etching time on the surface facing the fullerene layer as well as the other surface. However, a relatively more open structure of the etched surface containing C₆₀ as compared to the bare one may be an indication of the extra damage caused by the energy released upon the destruction of C₆₀ molecules by energetic protons.     

Evolution of optical properties and molecular structure of PCBM films under proton irradiation

Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C₆₁-butyric acid methyl ester (PCBM) are studied in this work. The PCBM films are irradiated by 100-keV proton beams with fluences of 5×10¹² p/cm², 5×10¹³ p/cm², and 5×10¹⁴ p/cm², respectively. The photoluminescence (PL) peaks of the post-irradiated PCBM films show a progressive decrease in the peak intensity as the proton fluences increase, which can be attributed to the deep defect levels induced by proton irradiation. Additionally, a slight blue-shift in the PL spectrum is also observed at a proton fluence of 5×10¹⁴ p/cm². The underlying mechanism can be traced back to the lift of the lowest unoccupied molecular orbital (LUMO) level, which is caused by the attachment of methoxy radicals on ortho position of the phenyl ring in the post-irradiated PCBM structure. This work is of significance in understanding the radiation hardness and the damage mechanism of the PCBM film in radiation environments, which is essential before it is put into practical application in space.     

Electron irradiation of polyesterurethane: study of chemical and structural modifications using FTIR, UV spectroscopy and GPC

To understand the electron irradiation effects on polymers, a polyesterurethane (ESPU) was irradiated by a 200 keV electron beam perpendicular to the surface under a vacuum of 0.04 Torr with electron fluxes of 0.25–1.25×10¹³ s⁻¹ on the irradiated zone. To perform a study of ESPU degradation versus the electron's penetration depth, a stratified structure was made with seventeen 30-μm-thick films. The irradiation was performed at both room temperature (293 K) and 77 K. The applied fluence was in the range of 10¹⁴–10¹⁷ cm⁻². Chemical transformations, such as degradation and oxidation, are studied by FTIR, by following NH and OH bond evolution, and by UV spectroscopy, by following the absorbance shift towards the visible region. These effects are analyzed versus depth, fluence and electron flux. Structural transformations are also characterized by GPC for soluble samples. An increase of crosslinking rate of the polymer is observed and analyzed.     

Modification of optical, chemical and structural response of CR-39 polymer by 50 MeV lithium ion irradiation

CR-39 polymer samples were irradiated with 50 MeV lithium ion beam; the fluence was varied in the range 10¹¹–10¹³ ionscm⁻². Irradiation effects were studied using UV–visible, FTIR spectroscopic and X-ray diffraction techniques. The observation of the recorded spectra shows that the detector is sensitive to swift ions irradiation and its UV absorption is influenced by the stopping power (dE/dx)_e. The FTIR spectra does not show any considerable changes due to the irradiation indicating that the detector is chemically stable. No appreciable change in the diffraction pattern of CR-39 polymer after irradiation upto the fluence level of 10¹³ ionscm⁻² is observed, showing its structural stability also.     

Optical and electrical properties of gamma irradiated PADC detector

PADC (Polyallyldiglycol carbonate) detector subjected to gamma rays undergoes change in optical and electrical properties. The optical band-gap is determined using Tauc's plot. The band-gap is found to be unchanged up to the dose of 10³ Gy, and then starts decreasing with increasing dose. The band-gap is lowered from 4.04 eV for the pristine material to 2.46 eV for the highest dose (10⁶ Gy). The dielectric constant of the detector is influenced due to the gamma exposure. At lower doses (up to 10⁴ Gy), the detector seems to be not polarised, so no change in dielectric constant is observed. But at the dose of 10⁵ Gy, the value is increased slightly while at the highest dose (10⁶ Gy), the dielectric constant of the detector is found to be enhanced significantly. The results indicated a decrease in track registration sensitivity with increase in gamma dose.     

快重离子辐照对MoS2热导率的影响研究

利用0.97 GeV的209Bi离子辐照二硫化钼（MoS₂）晶体,辐照注量范围为1×1010～1×1012 ions/cm2,结合原子力显微镜（AFM）观测和Raman光谱分析研究了快重离子辐照对MoS₂热导率的影响。实验结果显示,快重离子辐照在MoS₂中产生了潜径迹,较高激光功率下的Raman测试使样品局部温度升高,导致E_1/2g和A_1g峰随注量增加向低波数方向移动,且峰形展宽。引入了通过改变激光功率测量Raman光谱得到MoS₂热导率的计算方法,获得了不同辐照注量下MoS₂的热导率的定量分析结果,随注量增加,热导率不断降低,从未辐照样品的563 W/mK下降到1×1012 ions/cm2辐照时的132 W/mK。Molybdenum disulphide (MoS₂) was irradiated by 0.97 GeV 209Bi ions with the fluence of 1×1010 to 1×1012 ions/cm2. The irradiation effect on the thermal conductivity of MoS₂ was analyzed by atomic force microscope (AFM) and Raman spectroscopy. The experimental results show that hillock-like latent tracks are observed on irradiated MoS₂ by AFM. The measurement of MoS₂ by Raman spectrometer with high laser power results in the increase of local temperature of MoS₂, which cause the downshift of peaks position and broadening of E_1/2g and A_1g peak. Furthermore, according to Raman spectra measured at different laser power, thermal conductivity of MoS₂ before and after irradiation was calculated, which show that the thermal conductivity of MoS₂ decreases with increasing fluence, from 563 to 132 W/mK for pristine and 1×1012 ions/cm2 irradiated MoS₂, respectively.     

Study of the effect of swift heavy Ni ion irradiation on ruby single crystal by using the XANES and EXAFS techniques

We have made the XAFS measurements at the Cr–K-edge on natural Indian ruby single crystals (corundum) and its two irradiated samples with fluence 1×10¹² Ni⁶⁺ and 5×10¹² Ni⁶⁺ ions/cm². Irradiated samples show interesting changes in their physical appearance. XANES measurements show progressive decrease in Δ_oct value on increase of Ni fluence in irradiated samples. EXAFS measurements on these samples show decrease in Cr–O distance on increase of Ni fluence. Lowering of Δ_oct value is correlated with the increase of Cr–O distance.     

Permeability of oxygen through polycarbonate in water

The permeability of oxygen in water through polycarbonate is observed for thin Makrofol KG and Polyethylenterephthalat (PETP) foils of different thicknesses.

For each thickness the oxygen permeability through the polymer foils has been measured for unirradiated and with a high fluence irradiated foils. It was found that the permeability of oxygen through irradiated Makrofol KG foils is up to a factor of two higher than unirradiated foils.

The foils were irradiated with ⁷⁹Au ions at the energy of 11.65 MeV/u at GSI Darmstadt, Germany.     

Study on irradiation-induced defects in GaAs/AlGaAs core–shell nanowires via photoluminescence technique

To gain a physical insight into the radiation effect on nanowires(NWs), the time resolved photoluminescence(TRPL)technique is used to investigate the carrier dynamic behaviors in GaAs/AlGaAs core–shell NWs before and after 1-MeV proton irradiation with fluences ranging from 1.0 × 10~(12) cm~(-2) to 3.0 × 10~(13) cm~(-2). It is found that the degradations of spectral peak intensity and minority carrier lifetime show similar trends against irradiation fluence, which is closely related to the displacement defects induced by irradiation. We also find that the proton irradiation-induced defects behave as Shockley–Read–Hall(SRH) recombination center trapping free carriers. Finally, the defect concentration could be estimated through measuring the minority carrier lifetime.     

Effect of secondary electrons from latent tracks created in YBCO by swift heavy ion irradiation

Swift heavy ions (SHI) with electronic energy loss exceeding a value of 14.4 keVnm⁻¹ create amorphized latent tracks in YBCO type superconductors. In the low fluence regime of an ion beam where tracks do not overlap, a decrease of the superconducting transition temperature as probed through resistivity studies, is not expected due to availability of percolating current paths. The present study however shows T_c decrease by about 1–3 K in thin films of YBCO when irradiated by 250 MeVAg ions at 79 K at a fluence of 5×10¹⁰–1×10¹² ionscm⁻². The highest fluence used in the present study is three times less than the fluence where track overlapping becomes significant. The T_c tends to increase towards the preirradiation value on annealing the films at room temperature. To explain this unusual result, we consider the effect of ion irradiation in inducing materials modification not only through creation of amorphized latent tracks along the ion path, but also through creation of atomic disorder in the oxygen sublattice in the Cu–O chains of YBCO by the secondary electrons. These electrons are emitted radially from the tracks during the passage of the SHI. Considering the correlation between the charge state of copper and its oxygen coordination, we show in particular that the latter process is a consequence of the inelastic interaction of the SHI induced low-energy secondary electrons with the YBCO lattice, which result in chain oxygen disorder and T_c decrease.     

快重离子辐照对非晶态SiO2薄膜光致发光谱的影响

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜,再用高能Pb和Xe离子对薄膜进行辐照,最后用荧光光谱分析了辐照参数(剂量、电子能损值)与发光特性改变的相关性.研究发现,快重离子辐照能显著影响薄膜的发光特性,进一步分析显示,辐照导致了SiO2薄膜内O-Si-O缺陷、缺氧缺陷和非桥式氧空位缺陷的产生,且缺氧缺陷和非桥式氧空...     

Effect of gamma rays on PADC detectors

The effect of Gamma radiation in Polyallydiglycol carbonate (PADC) detectorrs has been studied in the dose range of 10⁰–10⁶ Gy. Some of the properties like bulk-etch rate, track-etch rate, activation energy for bulk and track-etching have been found out for different gamma doses from ⁶⁰Co Source in PADC. The experimental results are presented and discussed.     

56Fe13+离子引起GaP晶体的微结构损伤

利用X射线衍射（XRD）技术、傅里叶变换红外光谱（FTIR）和Raman光谱对经不同剂量的56Fe13+离子辐照的GaP晶体的微结构进行了表征。结果表明:随着辐照离子剂量的增加,GaP晶体中产生了局部的无序与缺陷。随着56Fe13+离子剂量的增加,Raman光谱展示出振动峰强度逐渐减弱而且一些逐渐消失,但其峰位几乎没有发生变化;XRD显示出GaP晶体的衍射峰的强度逐渐减小;FTIR主要表现为宽化及其强度增加。这表明重离子56Fe13+的辐照使得GaP晶体中的缺陷与无序性增加,导致晶体产生了局部的非晶化。The Misconstructural damage of GaP irradiated with 56Fe13+ to fluences ranging from 1×107 ions/cm2~1×1010 ions/cm2 were analyzed by X-ray diffraction (XRD) techniques, Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The result shows that, with the increase of irradiation ion fluences, local disorder and defects were produced in GaP crystal. With the increase of ion fluence, Raman spectra reveal the intensity of scattering peaks gradually weakens and some scattering peaks gradually disappear, however no changes in the peak position were found. XRD measurement displays that the intensity of diffraction peaks gradually decreases with an increase in ions fluences. Result from FTIR spectra exhibits that the intensity of reflection peaks gradually increases and the FWHM of reflection peaks broadens. These phenomena indicate that, the irradiation of heavy-ion Fe produces defects and disorder in GaP crystal, leading to a local amorphization.     

Structural modification in swift heavy ion irradiated muscovite mica

Two-layer monoclinic(2 M) muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss( dE/dx)_e of 14.7 keV/nm. The ion fluence is varied between 1×10~(11) and1×10~(13) ions/cm~2. Structural transition in irradiated mica is investigated by x-ray diffraction(XRD). The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion(SHI) irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic(1 M) structure is thought to be generated in 2 M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy(HRTEM) is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.     

Gamma effect on track properties of PADC detector

Effect of high gamma irradiation on track properties of PADC (Homalite) has been studied in the dose range of 10¹–10⁶ Gy. The properties like bulk-etch rates and track-etch rates of the detector are found to increase due to gamma exposure. Etching efficiency of the detector increases due to exposure and it is significant at the dose higher than 10³ Gy. Another track property, the critical angle, is also influenced by gamma exposure and is found to decrease with increasing dose. In all cases it is observed that the post-gamma exposure has greater effect than the pre-gamma exposure. The experimental results are presented and discussed in details.     

Hydrogen isotopic replacement and microstructure evolution in zirconium deuteride implanted by 150 keV protons

Zirconium tritiated(ZrT_x) is an alternative target material for deuteron–triton(D-T) reaction neutron generator. The isotopic replacement and microstructure evolution induced by hydrogen isotope implantation could significantly affect the performance of the target film. In this work, the zirconium deuteride film deposited on Mo/Si substrate was implanted by 150 ke V protons with fluence from 1×10~(16) to 1×10~(18) protons/cm~2. After implantation, the depth profiles of retained hydrogen(H) and deuterium(D) in these target films were analyzed by elastic recoil detection analysis(ERDA), and time of flight-secondary ion mass spectrometry(To F-SIMS). Additionally, the microstructure evolution was also observed by x-ray diffraction(XRD) and scanning electron microscope(SEM). The D concentration in the Zr Dx film decreased versus the proton implantation fluence. An analytical model was proposed to describe the hydrogen isotopic trapping and exchange as functions of incident protons fluence. Additionally, the XRD analysis revealed that no new phase was formed after proton implantation. Furthermore, circular flakings were observed on the ZrD_x surface from SEM images at fluence up to 1×10~(18) protons/cm~2, and this surface morphology was considered to associate with the hydrogen atoms congregation in Mo/Si boundary.     

Analysis of proton and γ-ray radiation effects on CMOS active pixel sensors

Radiation effects on complementary metal-oxide-semiconductor(CMOS) active pixel sensors(APS) induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10~(11) protons/cm~2 and 2.14 × 10~(11) protons/cm~2,respectively, while another sample has been exposed un-biased to 65 krad(Si) ~(60)Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose(TID) damage.     

退火对Pb辐照Al2O3单晶发光特性的影响

研究了230MeV的²⁰⁸Pb²⁷⁺辐照Al₂O₃样品及随后在600,900,1100K高温条件下退火后的光致发光特性。从辐照样品的测试结果可以清楚地看到在波长为390,450nm处出现了强的发光峰。辐照量为1×10¹³ions/cm²时,样品的发光峰最强。经过600K退火2h后测试结果显示,380nm发光峰剧烈增强,而其他发光峰显示不明显。在900K退火条件下,380nm的发光峰开始减弱,而在360,510nm出现了明显的发光峰,至到1100K退火完毕后380nm的发光峰完全消失,而360,510nm的发光峰相对增强。从被辐照样品的FTIR谱中看到,波数在460~510cm^-1间的吸收是振动模式,经过离子辐照后,吸收带展宽,随着辐照量的增大,Al₂O₃振动吸收峰消失,说明Al₂O₃振动模式被完全破坏。1000~1300cm^-1之间为Al—O—Al桥氧的伸缩振动模式,辐照后吸收带向高波数方向移动,说明其振动模式受到影响。辐照剂量较小的样品,损伤程度相对较低,经退火晶化后,振动模式基本恢复到单晶状态;辐照剂量较高的样品,损伤程度大,退火处理后表面变得较粗糙,振动模式并未出现,说明结构破坏严重。     

AFM and electronic transport studies of swift heavy ion irradiated Mn/p-Si bilayer structure

Mn/p-Si structures have been realised by electron beam evaporation of manganese on etched and cleaned p-Si wafers. Bilayer structures have been irradiated by swift heavy ions (of 100 MeV Fe⁷⁺ having a fluence of 1 × 10¹³ ions/cm²). The electronic transport features across the bilayer of the structure (i.e. I–V characteristics across the Mn/p-Si interface) show a significant increase of current (by two orders of magnitude) for the irradiated ones as compared to un-irradiated ones. I–V characteristics across the interface has also been recorded in presence of in-plane (i.e., along the plane of the interface) magnetic field which show a significant magnetic field sensitivity for the irradiated ones. The surface morphological studies from AFM show a granular structure with open face having micro-particles in it, prior to the irradiation and round shaped embedded granular structure after the irradiation. XRD data show the formation of manganese silicide (Mn₅Si₂). The results are understood in the realm of interfacial intermixing which is tailored by the swift heavy ion irradiation.     

Electronic conduction properties of Au/C60/p-Si and C60/Au/p-Si sandwich structures: I–V and transducer characteristics

Gold-fullerite [C₆₀]-silicon (p-type) sandwich structures have been fabricated in order to investigate intrinsic cross-sectional and planar electronic conductive properties, in particular the C₆₀/p-Si p–n heterojunction. The turn-on voltage of this p–n heterojunction lies in the range 0.25–0.27 V. The I–V characteristics of the Au/C₆₀/p-Si structure are mostly defined by the bulk specific resistance of the fullerite crystal film itself (6×10⁷ Ω cm). I–V curves in the C₆₀/Au/p-Si structure are shown to be ohmic. Au/C₆₀/p-Si sandwiches irradiated with swift (300 MeV) heavy ions, (⁸⁴Kr¹⁴⁺) to a total fluence 10¹⁰ ion/cm² yield structures which are sensitive to ambient air pressure, specifically in the case of a transverse contact configuration, and if one of the contacts is located on the irradiated part of the fullerite film. The sandwich-structure sensitivity to pressure is 5×10⁻⁶ Pa⁻¹. This exceeds the sensitivity of conventional silicon pressure transducers by almost three orders of magnitude.