Electrical capacitance of dielectric coated metallic parallelepiped and closed cylinder isolated in free space

This paper presents a method for the evaluation of the capacitance and the charge distribution of a dielectric coated metallic parallelepiped and a dielectric coated metallic hollow cylinder with the top and bottom cover plates using the method of moments (MoM) based on the pulse basis function and the point matching. Boundary conditions for the potential on the conductor surfaces and continuity of the normal component of the displacement density at the dielectric-free space interface is used to generate two integral equations. Two sets of simultaneous equations are formed from the two integral equations using the MoM. The total charge on the conductor surface is found from the solution for the set of simultaneous equations. The validity of the analysis has been justified by comparing the data on the capacitance available in the literature for metallic cube and hollow cylinder with top and bottom cover plates with the data on capacitance, computed by the present method for similar structures considering a very low dielectric constant as well as a very thin dielectric coating.     

Capacitance and surface charge distribution computations for a satellite modeled as a rectangular cuboid and two plates

This paper presents a method to evaluate the capacitance and the surface charge distributions of a satellite modeled as a structure consisting of a rectangular cuboid with two coplanar rectangular plates. The Charges accumulate on the satellite surfaces result destructive electrostatic discharges (ESD). Integral equations are formed by relating the unknown charge density on the metallic cuboid and the two rectangular plates to the potential on the surface of these bodies. The integral equations are solved using the Method of Moments (MoM) based on pulse function as basis functions and delta functions as testing functions. In order to apply MoM, the surfaces of the metallic bodies are discretized by using non-uniform rectangular subsections. The numerical data on capacitance of this structure have been presented. The key results are that the computational method is validated by computing the capacitance of a cuboid to be 73.46 pF/m, which is consistent with previous works. Faster convergence and shorter computational time are achieved using non-uniform subsections. And, as expected, the surface charge density diminishes at joints where the plates connect to the cuboid.     

Nanowire and nanocable junction capacitances: Results for metal and semiconducting oxides

Formulas are derived for Schottky junction and p-n junction capacitances of nanowires and nanocables (which includes the hollow case of nanotubes). Evaluation of these expressions for the very unusual metal oxide, metallic conductor RuO₂, demonstrates that capacitance values occur in the aF range. Furthermore, for recently fabricated conductor RuO₂/SiO₂ nanocables as reported in the literature, we show that the junction capacitances are significantly lower than the intrinsic quantum capacitance. These formulas are of great interest for device applications, and the capacitance findings could also have huge implications for charge storage and energy conversion applications.     

Electrostatics and heat conduction in high contrast composite materials

We present a robust integral equation method for the calculation of the electrostatic and thermal properties of systems made of piecewise homogeneous, high contrast materials. By high contrast, we mean that the electrical or thermal conductivity ratios are high.Our approach involves a modification of the standard integral representation using, in electrostatic terms, the polarization charge as an unknown. It is related to the perturbation approach proposed by Tausch and White [J. Tausch, J. White, Capacitance extraction of 3-D conductor systems in dielectric media with high-permittivity ratios, IEEE Trans. Microwave Theory Tech., 47 (1999) 18–26], but based on a simple form of projection rather than on the solution of auxiliary integral equations. Numerical implementation is straightforward in the multiple dielectric case.     

Diffraction of guided waves by the end face of a dielectric slab waveguide terminated with a finite conductive strip

The diffraction of guided waves by the end face of a dielectric slab waveguide short circuited with a finite conductive strip is analyzed. An integral equation technique is employed to formulate the corresponding boundary problem. The unknown term in this integral equations is the electric field E(x) on the terminal plane of the waveguide. The homogeneous term is determined from the incident guided wave. A method of moments technique is employed to compute approximately the electric field E(x) by using Laguerre functions as describing and testing functions. The reflection coefficients of the guided waves are computed by using the approximate expression of the E(x) field. Numerical results are given for several guide and conductor plate dimensions.     

Capacitance of an elliptical disk on a semi-infinite dielectric material

Using an integral transform, the mixed boundary value problem of a conducting, elliptical disk on a dielectric half-space in an electric field is reduced to the solution of an integral equation. An analytical expression of the electric system capacitance is derived, which is a function of the eccentricity of the elliptical disk. The electric charge and electric stress distribute non-uniformly over the surface of the elliptical disk and display local singularities at the edge of the elliptical disk. The square root singularity of the electric field at the edge of the elliptical disk leads to the divergent of the resultant force on the elliptical disk, which is physically unrealistic. There likely exist geometrical constraint and/or field constraint to limit the presence of the square root singularity of the electric field. For any symmetric conductor in an infinite space that consists of air (vacuum) and a semi-infinite dielectric material with symmetric plane being in the interface between the air and the dielectric material, the electric potential in the space is independent of the dielectric constant of the dielectric material.     

Green's function for arbitrarily shaped dielectric bodies of revolution

In this paper, a solution is developed to calculate the electric field at one point in space due to an electric dipole exciting an arbitrarily shaped dielectric body of revolution (BOR). Specifically, the electric field is determined from the solution of coupled surface integral equations (SIE) for the induced surface electric and magnetic currents on the dielectric body excited by an elementary electric current dipole source. Both the interior and exterior fields to the dielectric BOR may be accurately evaluated via this approach. For a highly lossy dielectric body, the numerical Green's function is also obtainable from an approximate integral equation (AIE) based on a surface boundary condition. If this equation is solved by the method of moments, significant numerical efficiency over SIE is realized. Numerical results obtained by both SIE and AIE approaches agree with the exact solution for the special case of a dielectric sphere. With this numerical Green's function, the complicated radiation and scattering problems in the presence of an arbitrarily shaped dielectric BOR are readily solvable by the method of moments.     

Scattering by small thin dielectric particles

In the analysis of electromagnetic scattering by distributions of small dielectric particles an approximation to the scattered field can be obtained by representing the electrical interaction of the particles in terms of the dipole moments of the individual particles. The calculation of the moments necessitates the solution of certain static scattering problems, and this becomes numerically difficult when the particles are thin. An integral equation formulation of the static scattering problem specialized to the case of thin planar dielectric plates is presented, along with an efficient numerical routine. Dipole moments are obtained over a range of permittivities for plates with several thicknesses and a variety of cross-sectional shapes, and the shape dependence is discussed.     

Capacitance analysis of a circular disk on a dielectric layer

Using the Hankel transform, the mixed boundary value problem of a conducting, circular disk on a dielectric layer in an electric field was reduced to the solution of dual integral equations. Analytical expressions of the capacitance of the electrical system to the second approximation were derived for the ratio of the layer thickness to the disk radius being larger than one and the ratio being less than one, respectively. Both expressions yield numerical results in accord with those reported in literature. The capacitance of a circular disk on a semi-infinite dielectric can be used for a ratio larger than or equal to 4. Using the results, the thickness effect on electrowetting of a disk-like conducting film on a dielectric substrate was discussed. There exists an upper bound of the electric voltage applied to the film above which the saturation of contact angle or local instability will occur.     

Metamaterials with dielectric and metallic inclusions in the cubic lattice

The method of integral equations, which is based on the Green function of periodically arranged sources, is used for analyzing periodic metamaterials (photonic crystals) in the form of the simplest metallic and dielectric inclusions into a rectangular cubic lattice in a dielectric medium (matrix). Dielectric inclusions in the form of parallelepipeds and cubes are considered, as well as similar metallic inclusions (perfectly conducting metal rods) and 1D nanosized structures with metallic layers. Metal inclusions are investigated in the case of ideal conduction and in the case of penetration of a field into the metal, which is simulated as an electron plasma. The results are applicable from microwave of optical frequencies.     

新型稀磁半导体Mn掺杂LiZnP的电子结构和光学性质

采用基于密度泛函理论的第一性原理计算方法,对纯LiZnP、Mn掺杂LiZnP、Li过量和不足时Mn掺杂LiZnP体系进行了几何结构优化,计算并分析了体系的电子结构、半金属性、态密度及光学性质.结果表明:LiZnP新型稀磁半导体可以实现自旋和电荷注入机制的分离.Mn的掺入使体系产生自旋极化杂质带,自旋极化率达到100%,表现出半金属铁磁性,且体系性质受Li计量数的影响.当Li不足时杂质带宽度增大,半金属性增强,居里温度提高,形成能最低.进一步比较光学性质发现:Mn掺入后体系光学性质没有明显变化,但随Li的化学计量数的改变,介电函数虚部会在低能区中出现新的介电峰,同时复折射率函数对低频电磁波吸收明显加强,且能量损失在Li过量时最小.     

新型稀磁半导体Mn掺杂LiZnP的电子结构和光学性质

采用基于密度泛函理论的第一性原理计算方法,对纯LiZnP、Mn掺杂LiZnP、Li过量和不足时Mn掺杂LiZnP体系进行了几何结构优化,计算并分析了体系的电子结构、半金属性、态密度及光学性质。结果表明：LiZnP新型稀磁半导体可以实现自旋和电荷注入机制的分离。Mn的掺入使体系产生自旋极化杂质带,自旋极化率达到100%,表现出半金属铁磁性,且体系性质受Li计量数的影响。当Li不足时杂质带宽度增大,半金属性增强,居里温度提高,形成能最低。进一步比较光学性质发现：Mn掺入后体系光学性质没有明显变化,但随Li的化学计量数的改变,介电函数虚部会在低能区中出现新的介电峰,同时复折射率函数对低频电磁波吸收明显加强,且能量损失在Li过量时最小。     

Cable transient voltages due to microphonics

Expressions for the voltage generated by tribocharging between a cable's dielectric and outer conductor, and the maximum voltage across a resistive load of a cable, are derived as a function of time. For a reasonably large load resistance and cable capacitance, the expressions reduce to simple single-time-constant equations that can be used to estimate the highest frequency of interest of the generated noise. The derived expressions can also assist the designer in weighing the tradeoffs associated with changing the ohmic resistance and capacitance of low-noise cables.     

介质壁加速器尾场阻抗的模拟计算

为了研究尾场效应引起的束流不稳定性,建立了由非对称Blumlein脉冲形成线、导体层和微堆层构成的介质壁加速器单元模块模型,用有限积分法对强流电子束在此结构中产生的尾场进行了计算,分别计算单组元和2组单元加速模块中的尾场势和尾场阻抗。从模拟的结果来看,x,y方向的尾场势和尾场阻抗都很小,束流尾场对横向的影响比较小。z方向的尾场势和尾场阻抗影响较大,尾场阻抗达到100Ω量级。证明了由于介质壁加速器结构在加速腔长度和束流通过路径的连续性方面都具有很大的优势,横向阻抗小,束流尾场效应在束流不稳定性方面的影响相对较小,束流传输时的要求也会降低。     

Surface Charges in Conductor Plates Carrying Constant Currents

In this work we analyze the case of resistive conductor plates carrying constant currents, utilizing surface charge distributions. We obtain the electric potential in the plates and in the space surrounding them. We obtain a non-vanishing electric field outside the conductors. We compare the theoretical results with experimental data present in the literature.     

On the interfacial capacitance of an electrolyte at a metallic electrode around zero surface charge

The behaviour of the capacitance of a planar double layer containing a restricted primitive model electrolyte (equi-sized rigid ions moving in a continuum dielectric) at and around zero surface charge is examined for a polarizable electrode with particular emphasis on a metallic surface. Capacitance results are reported for symmetric valency (1:1) salts encompassing a range of concentrations and temperatures covering both electrolyte solution and ionic liquid regimes. Although the modified Poisson–Boltzmann theory is principally employed, at higher concentrations the theoretical calculations have been supplemented by Monte Carlo simulations. Capacitance anomaly, that is, increase of capacitance with temperature at low temperatures, is seen to occur when the electrode is an insulator with a low dielectric constant or when it is unpolarized. No capacitance anomaly is, however, seen for a metallic electrode with an infinite dielectric constant and in this situation the capacitance increases (a) dramatically at low temperatures (strong coupling) at a given concentration, and (b) as concentration increases at a given temperature. These capacitance trends are consistent with earlier works in the presence or absence of surface polarization and, in particular, the results for a conducting electrode at ionic liquid concentrations are consistent with that recently reported by Loth et al. [Phys. Rev. E, 82, 056102 (2010)]. Overall the theoretical predictions are qualitative to semi-quantitative with the simulations.     

Extremely slow charge fluctuations in the metallic state of the two-dimensional molecular conductor theta-(BEDT-TTF)2RbZn(SCN)4

Large charge disproportionation has been confirmed in the metallic state of a 1/4-filled organic conductor theta-(BEDT-TTF)2RbZn(SCN)4 by means of 13C-NMR analysis on a selectively 13C-enriched single crystal sample. By comparing the homogeneous and inhomogeneous linewidths, the temperature dependence of the extremely slow dynamics of charge fluctuations has been determined first. The exotic nature of the metallic state of this salt is discussed.     

格林函数在计算部分电容中的应用

在工业上和在实验室中,我们都会遇到两个物体之间的电磁屏蔽的问题。在许多应用中,我们只须注意到两个物体之间的静电屏蔽就够了,因而它们之间的相互作用可以从计算它们之间的相互电容来定出。当干扰物体的尺寸很小因而可以认为是一个点电源时,则当它与另一个接地导体(即问题中的电磁屏蔽)共同存在时所生的效应即可由这一个接地导体的格林函数表出。关于格林函数的知识已有很丰富的积累,因而本文中所提出的方法是可以解决多种多样的问题的。文中讨论了扁椭球坐标和长椭球坐标中的格林函数,并对带虚数自变数的勒讓特函数的若干个公式作了推导,因为这些有用的公式在流行的文献中还未见到。导体表面任意形状的小孔的问题是值得讨论的,特别是有限大导体表面上的小孔问题,本文从理论上验证了文献上已经提出来的实验结果。最后我们给出如下两个物体之间的相互电容公式:其中一个是在带小孔的闭合电磁屏蔽体的另一个之内。     

Quasi-static analysis of multicrossover structures in grounded two-layer dielectric media

The capacitive coupling effects of multi-crossover structures in grounded two-layer dielectric media are investigated by a set of generalized quasi-static formulations. The moment method is employed to solve the set of generalized integral equations for the charge densities. Both the distributed capacitances and the lumped excess capacitances are computed.