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Connection, torsion and curvature are introduced for general (local) Leibniz algebroids. Generalized Bismut connection on TMΛpT1M is an example leading to a scalar curvature of the form R+H2 for a closed (p+2)-form H.  相似文献   

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We define Aeppli and Bott–Chern cohomology for bi-generalized complex manifolds and show that they are finite dimensional for compact bi-generalized Hermitian manifolds. For totally bounded double complexes (A,dd), we show that the validity of dd-lemma is equivalent to having the same dimension of several cohomology groups. Some calculations of Bott–Chern cohomology groups of some bi-generalized Hermitian manifolds are given.  相似文献   

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In this paper, first we introduce a new notion of pseudo anti-commuting for real hypersurfaces in complex two-plane Grassmannians G2(Cm+2) and prove a complete classification theorem, which gives a shrinking Ricci soliton with potential Reeb flow on Hopf real hypersurfaces and a tube over a totally real totally geodesic QPn, m=2n in G2(Cm+2).  相似文献   

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Negative thermal expansion materials can experience significant stresses when they are used in composites. Under ambient conditions Zr2(WO4)(PO4)2 displays anisotropic negative thermal expansion (NTE) (αv=?14.0(10)×10?6K?1, αa=?7.9(5)×10?6K?1, αb=2.5(5)×10?6K?1, αc=?8.7(2)×10?6K?1 at 0 GPa). The effect of hydrostatic pressure on its thermal expansion characteristics was investigated by neutron diffraction between 300 and 60 K at pressures up to 0.3 GPa. No phase transitions were observed in the pressure and temperature range examined. The material was found to have a bulk modulus, B0, of 61.3(8) GPa at ambient temperature, and unlike some other NTE materials, pressure had no detectable effect on thermal expansion (αv=?14.2(8)×10?6K?1, αa=?7.9(3)×10?6K?1, αb=2.9(5)×10?6K?1, αc=?9.2(2)×10?6K?1 at 0.3 GPa).  相似文献   

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We study the negatively T? and positively T+ charged trions in bulk materials in the effective mass approximation within the framework of a potential model. The binding energies of trions in various semiconductors are calculated by employing Faddeev equation in configuration space. Results of calculations of the binding energies for T? are consistent with previous computational studies and are in reasonable agreement with experimental measurements, while the T+ is unbound for all considered cases. The mechanism of formation of the binding energy of trions is analyzed by comparing contributions of a mass-polarization term related to kinetic energy operators and a term related to the Coulomb repulsion of identical particles.  相似文献   

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