Polaron effects on the binding energy of a double donor impurity in quantum wells in an electric field

The binding energy of the single and double bound polaron bound to a helium-type donor impurity in quantum wells (QWs) subject to a perpendicular electric field are calculated by a variational method. The couplings of an electron and the impurity with various phonon modes are considered. The results show that the cumulative effects of the electron–phonon coupling and the impurity–phonon coupling can contribute appreciably to the binding energy for the single bound polaron but only in some severe conditions for the double bound polaron. They also show that the binding energy is sensitive to the electric field strength. The comparison between the binding energies in the case of the impurity placed at the quantum well center and at the quantum well edge is also given.     

Dielectric mismatch and shallow donor impurities in GaN/HfO2 quantum wells

In this work we investigate electron–impurity binding energy in GaN/HfO₂ quantum wells. The calculation considers simultaneously all energy contributions caused by the dielectric mismatch: (i) image self-energy (i.e., interaction between electron and its image charge), (ii) the direct Coulomb interaction between the electron–impurity and (iii) the interactions among electron and impurity image charges. The theoretical model account for the solution of the time-dependent Schrödinger equation and the results shows how the magnitude of the electron–impurity binding energy depends on the position of impurity in the well-barrier system. The role of the large dielectric constant in the barrier region is exposed with the comparison of the results for GaN/HfO₂ with those of a more typical GaN/AlN system, for two different confinement regimes: narrow and wide quantum wells.     

Effect of magnetic field and soft potential barrier on off-axis donor binding energy in a nanotube with two quantum wells

We analyze the effect of the magnetic field parallel to the axis and different potential shape on the ground-state binding energy of the off-axis donors in cylindrical nanotubes containing two GaAs/GaAlAs quantum wells (QWs) in a section of the tube layer. We express the wave function as a product of combinations of s and p subband wave functions and an envelope function that depends only on the electron-ion separation. By using the variational principle we derive a differential equation for the envelope function, which we solve numerically. Two peaks in the curves for the dependence of the ground-state binding energies on the donor distance from the axis are presented and it is shown that the increasing the magnetic field increasing the binding energy while the impurity is located in the QW1, whereas the opposite occurs when the impurity is located in the QW2.     

Carrier dynamics in type-II GaAsSb/GaAs quantum wells

Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.     

Self-consistent approach for calculations of exciton binding energy in quantum wells

We introduce a computationally efficient approach to calculating characteristics of excitons in quantum wells. In this approach we derive a system of self-consistent equations describing the motion of an electron–hole pair. The motion in the growth direction of the quantum well in this approach is separated from the in-plane motion, but each of them occurs in modified potentials found self-consistently. The approach is applied to shallow quantum wells, for which we obtained an analytical expression for the exciton binding energy and the ground state eigenfunction. Our numerical results yield lower exciton binding energies in comparison to standard variational calculations, while require reduced computational effort.     

The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots

Using a variational approach, we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots. Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure.     

Comparison of external electric and magnetic fields effect on binding energy of hydrogenic donor impurity in different shaped quantum wells

The effects of external electric and magnetic fields on the ground state binding energy of hydrogenic donor impurity are compared in square, V-shaped, and parabolic quantum wells. With the effective-mass envelope-function approximation theory, the ground state binding energies of hydrogenic donor impurity in InGaAsP/InP QWs are calculated through the plane wave basis method. The results indicate that as the quantum well width increases, the binding energy changes most fast in SQW. When the well width is fixed, the binding energy is the largest in VQW for the donor impurity located near the center of QWs. For the smaller and larger well width, the electric field effect on binding energy is the most significant in VQW and SQW, respectively. The magnetic field effect on binding energy is the most significant in VQW. The combined effects of electric and magnetic fields on the binding energy of hydrogenic donor impurity are qualitative consistent in different shaped QWs.     

Self-consistent Hartree method for calculations of exciton binding energy in quantum wells

A new computationally efficient and flexible approach to calculating characteristics of excitons in quantum wells based on a self-consistent variational treatment of the electron–hole Coulomb interaction is developed. It is applied to several different quantum well materials and is shown to give much better (lower) values of exciton energies. The iterative scheme used to calculate the energies and respective wave functions is stable and rapidly convergent. The authors believe that the method can be an important computational tool in computing exciton characteristics in shallow quantum wells exceeding currently existing approaches in accuracy and efficiency. The method can also be naturally generalized for quantum wires and dots.     

Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement

Magneto-optical absorption spectra due to exciton states and Landau-levels were measured in GaAs/AlAs multi-quantum-wells. By extrapolating the photon energies of the absorption peaks to zero magnetic field, the lowest state (1S) heavy hole exciton binding energy, E^B_$\text{h}$(1S), was obtained as a function of well size L_z in the range $\text{58}\text{A}\text{?}\text{?}\text{L}{}_{\mathrm{z}}\text{?252}\text{A}\text{?}$. The L_z dependence of E^B_h showed the change of the exciton character from three-dimensional to two-dimensional with decreasing L_z. The diamagnetic shift observed for the heavy hole exciton peak was larger than that for the light hole exciton peak, showing the anisotropic nature of the Luttinger-Kohn Hamiltonian. The diamagnetic shift of the heavy hole exciton peak became smaller as L_z was decreased, suggesting the enhancement of the two-dimensional exciton character.     

The polaron effect on the binding energy of a shallow donor impurity in quantum-well wires in an electric field

Using a variational technique, the effect of electron-longitudinal optical (LO) phonon interaction on the ground and the first few excited states of a hydrogenic impurity in a semiconductor quantum wire of rectangular cross section under an external electric field is studied theoretically for the impurity atom doped at various positions. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied uniform electric field and the position of the impurity. It is found that the presence of optical phonons changes significantly the values of the impurity binding energies of the system. Taking into account the electron–LO phonon interaction the 1s→2p_y and 1s→2p_z transition energies are calculated as a function of applied electric field for different impurity positions.     

Optical properties of type-II InGaN/GaAsN/GaN quantum wells

Optical properties of type-II InGaN/GaNAs QW light-emitting diodes are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The type-II InGaN/GaNAs/GaN QW structure shows much larger spontaneous emission and optical gain than that of a conventional QW structure. This can be explained by the fact that, in the case of the type-II QW structure, the effective well width is greatly reduced. A type-II QW structure shows that the peak position at a high carrier density is similar to that (530 nm) at a low carrier density. On the other hand, in the case of a conventional QW structure, the peak position is largely blueshifted at a high carrier density.     

Exciton states and relaxation dynamics in shallow quantum wells

Il Nuovo Cimento D - Optical properties of GaAs/Al x Ga1−x As shallow quantum wells have been studied in the 2–200K range, both by c.w. and time-resolved experiments. The results agree...     

Magnetic field induced donor exciton binding energy in a strained InAs/InP quantum wire

Magneto–exciton bound donor is investigated in a strained InAs/InP quantum wire within the framework of single band effective mass approximation. The strain contribution to the potential is determined via deformation potential theory. The interband optical transition is computed with the various structural parameters in the influence of magnetic field.