TiO2光致双亲性与水性油墨转印的研究

研究了TiO2薄膜作为一种新型印刷材料的浸润性与光照时间和光照强度的关系以及光照时间对水性油墨在薄膜表面吸附的影响,实现了水性油墨由TiO2薄膜向纸张的多次转移.     

铝材表面状态对TiO2薄膜光催化性能和光致亲水性的影响

在纯铝片和具有氧化铝层的铝片上用提拉法制备TiO2/Al和TiO2/Al2O3/Al样片,通过FTIRATR技术和密闭间歇式反应装置分别考察了TiO2薄膜对油酸和乙烯的光催化降解性能,通过测试接触角考察TiO2薄膜的光致亲水性.结果表明,TiO2/Al2O3/Al对油酸的光降解性能比TiO2/Al的好,但其光催化氧化乙烯性能和光致亲水性能较差.这种差别可通过不同过程的作用机理和Al与TiO2表面的电子转移作用得到较好解释,由此得出TiO2薄膜的光催化性能与光致亲水性可能是两种既有联系又相互独立的性质     

纳米TiO2薄膜的热致亲水性与光致亲水性机理

应用真空磁控溅射，溶胶－凝胶方法和电沉积方法分别在玻璃和导电玻璃表面制备了纳米TiO2薄膜，纳米TiO2薄膜的热致亲水性研究表明，这是由于热处理对TiO2薄膜表面的清洁作用除去了吸附的水和有机污染物而产生的。TiO2薄膜的光致亲水性可能也源于紫外光照产生的活性粒子对TiO2薄膜的“光清洁作用”所致。     

TiO2/SiO2/CeO2复合纳米薄膜超亲水性能的研究

采用溶胶凝胶法在载玻片表面制备了均匀透明的TiO2-SiO2-CeO2超亲水性薄膜，并用X射线衍射、傅立叶红外光谱、紫外-可见分光光度计研究了SiO2及稀土铈添加对TiO2薄膜表面特征及超亲水性能的影响。结果表明，Ti02-SiO2-CeO2薄膜亲水性能及亲水持续效应显著提高。实验中掺杂的铈是以三价离子态引入的，由于Ce^3 在高温下很容易氧化，故在薄膜中铈主要以四价态形式存在。Ce^4 在光激发下很容易捕获光生电子生成Ce^3 离子，光生空穴则与表面氧离子反应形成氧空位，而氧空位对亲水性的提高具有关键作用。添加SiO2后，薄膜表面的羟基含量增加，这主要是由于TiO2与SiO2复合在表面形成Lewis酸所致。表面稳定的羟基可使亲水性在暗中保持较长时间，因而亲水持续效应提高。添加SiO2及稀土铈后，薄膜中TiO2晶粒尺寸变小，量子效应增强，这也导致亲水性提高。因此添加稀土铈及SiO2后，薄膜表面的氧空穴增多，薄膜的超亲水性及亲水持续效应提高。     

超亲水TiO2和TiO2-SiO2表面的动态润湿性

1997年, Fujishima研究组[1]发现TiO2表面经UV光照射能产生较强的亲水性, 同时具有较高的亲油性, 即经UV光照射后的TiO2表面具有超双亲的性质. 这种防雾和自清洁性在工业上应用广泛, 已引起了人们的极大兴趣[2～5]. 进一步的研究发现, 超亲水的TiO2表面在暗处放置会变为疏水表面. 对于这个问题, 除了可以通过UV光照[6]、氩离子或电子束溅射[6]和高温热处理[5]等恢复其超亲水性外, 还可以通过添加摩尔分数为10%～30%的SiO2有效地降低TiO2表面的接触角, 提高UV光诱导的超亲水表面在暗处的稳定性能[3]. 另外, 诱导TiO2的亲水性需要较强的UV线强度(如太阳光), 使它在室内应用受到限制. 为了在室内实现TiO2的自清洁功能, Watanabe等[4]发现在TiO2中添加WO3可使TiO2在室内的照明光下也能实现亲水性转变. 以上这些研究成果为TiO2在工业和生活上的实际应用提供了重要的科学依据. 然而, TiO2的防雾和自清洁功能的实现同时也受其动力学性质的制约.     

掺杂Sb对纳米TiO2薄膜的超亲水性和微结构的影响

用溶胶-凝胶法将纳米TiO2:Sb薄膜沉积在玻璃基板上.研究了掺杂浓度对薄膜的光致超亲水性、薄膜结构和晶相转变的影响.结果表明,纯TiO2薄膜中， TiO2不仅以无定型态存在，而且还以板钛矿和锐钛矿的形式存在.掺杂Sb提高了TiO2由无定型向板钛矿和锐钛矿转变的速率.掺入适量的Sb后， TiO2薄膜表现出更好的光致超亲水性.由XRD谱可算出薄膜的晶粒大小为13.3～20.0 nm.     

紫外光照处理对TiO2膜光伏性能的影响

近年来人们利用纳米晶TiO2电极取代普通的TiO2电极[1],使其太阳能电池的光电转换效率得到很大提高.纳米晶TiO2电极具有大量表面态,在化学上表现为Ti3+或Ti—OH,对于光生电荷的分离过程和迁移过程有重要影响.这些表面化学结构的变化可能会导致TiO2的光伏性能的变化.1997年Fujishima等[2]用紫外光照射TiO2膜使它具有超亲水的性质,结构分析表明,超亲水的原因在于光照使TiO2膜的表面形成Ti—OH[3].因此,在光照处理的同时可能会导致TiO2的光伏性的变化.本文对紫外光照处理TiO2膜的光伏性能进行了研究,并结合光诱导TiO2的亲水性变化对光伏性能变化的原因进行了讨论.     

掺铈纳米TiO2薄膜制备及光催化降解甲醛甲苯

通过Sol-Gel工艺在玻璃表面及多孔陶瓷表面制得了均匀透明的掺铈纳米TiO2薄膜．通过SEM、XRD及UV-Vis等手段对玻璃表面掺铈纳米TiO2薄膜进行了表征．结果表明，薄膜表面无开裂现象、膜内部比表面积大、TiO2分布均匀．薄膜中出现的锐钛矿相在(101)面有一定的择优取向，且UV-Vis研究表明，掺铈纳米TiO2薄膜在近紫外的吸光度有明显提高．利用自行设计的反应器，以多孔陶瓷为介质，对甲醛、甲苯等有机物进行了光催化降解研究．结果表明，掺铈纳米TiO2薄膜对甲醛甲苯有极高的光催化降解效率，由于薄膜成本低廉，易于工业化，为净化室内空气开辟了新的途径．     

利用瞬态光电压技术对纳米TiO2 薄膜电极中光生电荷传输机理的研究

利用瞬态光电压技术对光生电荷在纳米TiO2 薄膜电极中的传输机理进行了研究. 结果表明光生电荷在纳米TiO2薄膜的体相和TiO2/ITO界面分别以扩散和漂移进行分离传输的. 并且对光生电子在TiO2/ITO界面的俘获对光电压响应产生显著的影响. 这是由于在TiO2/ITO界面存在界面势垒,且带弯是从TiO2指向ITO向下弯曲. 同时也表明瞬态光电压是一种很好的表征光电功能材料的光电性质的方法.     

低含量铁掺杂对TiO_2薄膜结构和亲水性能的影响

采用溶胶-凝胶法在普通载玻片上制备了锐钛矿型TiO2和Fe/TiO2薄膜,并通过SEM、XRD、XPS、AFM和PAS等技术对其进行表征。结果表明,铁离子掺入后,TiO2薄膜变得更加致密,铁离子以Fe2O3的形式存在,0.1%Fe/TiO2薄膜的正电子寿命最长。在可见光照射下,TiO2薄膜表现为明显的亲水性。对于Fe/TiO2薄膜,随着铁掺杂量的增加,亲水性呈先增加后趋于平衡的趋势,镀膜5层、450℃焙烧时薄膜的亲水性最佳。     

The Effect of SiO2 Addition on the Grain Size and Photocatalytic Activity of TiO2 Thin Films

The uniform transparent TiO₂/SiO₂ nanometer composite thin films were prepared via sol-gel method on the soda lime glass substrates, and were characterized by X-ray photoelectron spectroscopy (XPS), FTIR spectroscopy, UV-VIS spectroscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD) and BET surface areas. It was found that the addition of SiO₂ to TiO₂ thin films could suppress the grain growth of TiO₂ crystal and increase the hydroxyl content of the surface of TiO₂ films. The photocatalytic activity of the as-prepared TiO₂/SiO₂ composite thin films increases for SiO₂ content of less than 5 mol%.     

Study on the Superhydrophilicity of the SiO2-TiO2 Thin Films Prepared by Sol-Gel Method at Room Temperature

Nanoscale SiO₂-TiO₂ composite thin films with the thickness of about 100 nm were prepared by sol-gel method at room temperature in air. The chemical states of the elements on the surface and near the surface were measured by XPS. The results showed that the Ti on/near the surface of the thin films existed not only as TiO₂ but also as Ti₂O₃. Part of the TiO₂ was changed to Ti₂O₃ after UV irradiation. The crystalline structure of the TiO₂ in the SiO₂-TiO₂ thin films was anatase with the crystallite size of 14–20 nm. It was found that the thin film prepared at room temperature in air has good superhydrophilic property and has strong adherence to the substrate.     

V2O5-TiO2复合半导体光催化材料结构及光响应性能研究

采用溶胶凝胶法制备了V₂O₅-TiO₂复合半导体材料，通过Raman、XRD及UV-Vis DRS等实验方法研究了V₂O₅与TiO₂复合对材料表面组成、晶体结构以及光响应性能的影响。结果表明：钒加入后优先与TiO₂作用形成较为稳定的金红石型TiVO₄晶相，其中V⁴⁺是促进TiO₂发生相变的关键；随着钒加入量的增加，V₂O₅由表面高分散状态逐渐聚集形成晶相，并释放部分Ti⁴⁺使之形成锐钛矿型TiO₂晶相，使得体相中金红石型TiO₂的含量有所下降；复合后形成的TiVO₄晶相显著提高了材料对可见光的吸收率，并使其吸光域红移至460 nm左右。     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Preparation and properties of SiO2-TiO2 thin films from silicic acid and titanium tetrachloride

The preparation of SiO₂-TiO₂ thin films by the sol-gel method using silicic acid and titanium tetrachloride as starting materials was studied. The homogeneous sols were obtained by the condensation reaction of silicic acid with titanium tetrachloride in methanol-tetrahydrofuran. The dipcoating of slide glasses and silicon wafers followed by heat treatment gave oxide thin films of 88–93% transmittance, 3000–4500 Å thickness, and 1.45–1.80 refractive index, depending on heat-treatment temperature and TiO₂ content. FT-IR measurement showed that the Si-O-Ti bond is formed even in the sol and films. The variations of film thickness and refractive index on transformation from the gels into the oxides were found to be quite low.     

Photocatalytic Activity and Photo-Induced Wettability Conversion of TiO2 Thin Film Prepared by Sol-Gel Process on a Soda-Lime Glass

We have developed the transparent photoactive TiO₂ thin film coated on soda lime glass (SLG) by sol-gel process. Titanium dioxide thin films coated on SLG exhibit lower photocatalytic activity due to the thermal diffusion of Na ion from the SLG substrate. Thin SiO₂ film precoating is very effective to prevent the thermal diffusion of Na ion. We have evaluated the photocatalytic decomposition of gaseous acetaldehyde and the photo-induced surface wettability of TiO₂ films with and without SiO₂ precoating layer. As expected, the TiO₂ film on SiO₂/SLG is more photoactive to decompose acetaldehyde than that on SLG. However, as for wettability conversion, there was little difference in the conversion rate between TiO₂ film without SiO₂, and TiO₂ film with SiO₂. Different dependence of Na ion diffusion on two kinds of photo-induced reaction on TiO₂ is discussed based on the difference of the photo-induced reaction mechanism.     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150W时,Ti_1-xV_xO₂薄膜的能带间隙值为2.82eV,其在2h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

Preparation and characterization of silver and indium vanadate co-doped TiO2 thin films as visible-light-activated photocatalyst

Novel visible-light-activated photocatalytic Ag/InVO₄-TiO₂ thin films were developed in this paper through a sol-gel method from the TiO₂ sol containing Ag and InVO₄. The photocatalytic activities of Ag/InVO₄-TiO₂ thin films were investigated based on the oxidation decomposition of methyl orange in aqueous solution. The Ag/InVO₄-TiO₂ thin films were characterized by X-Ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis absorption spectroscopy (UV-vis). The results revealed that the Ag/InVO₄-TiO₂ thin films extended the light absorption spectrum toward the visible region; the Ag and InVO₄ co-doped thin films significantly enhanced the methyl orange photodegradation under visible light irradiation. It has been confirmed that the Ag/InVO₄-TiO₂ thin films could be excited by visible light (E < 3.2 eV). The significant enhancement in the Ag/InVO₄-TiO₂ photo activity under visible light irradiation can be ascribed to the simultaneous effects of doped noble metal Ag by acting as electron traps and InVO₄ as narrow band gap sensitizer.     

Construction of SiO2-TiO2/g-C3N4 composite photocatalyst for hydrogen production and pollutant degradation: Insight into the effect of SiO2

Using low-cost precipitated silica (SiO₂) as the carrier, a ternary SiO₂-TiO₂/g-C₃N₄ composite photocatalyst was prepared via the sol-gel method associated with a wet-grinding process. The as-prepared composite exhibits photocatalytic hydrogen production and pollutant degradation performance under solar-like irradiation. The effect of SiO₂ carrier on the properties of the heterostructure between TiO₂ and g-C₃N₄ (CN) was systematically studied. It is found that SiO₂ has important effects on promoting the interaction between TiO₂ and CN. The particle size of TiO₂ and CN was obviously reduced during the calcination process due to the effects of SiO₂. Especially, the TiO₂ particles exhibit monodispersed state with particle size below 10 nm (quantum dots), resulting in the improvement of the contact area and the interaction between TiO₂ and CN, and leading to the formation of efficient TiO₂/CN Z-scheme heterostructure in SiO₂-TiO₂/CN. Besides, the introduction of SiO₂ can increase the specific surface area and light absorption of SiO₂-TiO₂/CN, further promoting the photocatalytic reaction. As expected, the optimum SiO₂-TiO₂/CN composite exhibits 12.3, 3.1 and 2.9 times higher photocatalytic hydrogen production rate than that of SiO₂-TiO₂, CN and TiO₂/CN under solar-like irradiation, while the photocatalytic active component in SiO₂-TiO₂/CN is only about 60 wt%. Moreover, the rhodamine B degradation rate of SiO₂-TiO₂/CN is also higher than that of SiO₂-TiO₂, CN and TiO₂/CN.     

Surface modification of thermoplastics by atomic layer deposition of Al2O3 and TiO2 thin films

Al₂O₃ and TiO₂ thin films were deposited by atomic layer deposition at 80-250 °C on various polymeric substrates such as polymethylmethacrylate (PMMA), polyetheretherketone (PEEK), polytetrafluoroethylene (PTFE) and ethylenetetrafluoroethylene (ETFE). The films were studied with FESEM, EDX, XRD, contact angle measurements and adhesion tests. The film growth rates on the thermoplastics were close to the corresponding growth rates on Si substrates. The adhesion of the films was good on PEEK and poor on PTFE. All coated surfaces showed lower water contact angles than the uncoated thermoplastics. Furthermore, the water contact angles on all TiO₂-coated surfaces decreased upon UV illumination, most efficiently with crystalline TiO₂ coatings.