The simulation of two-beam high-dose ion implantation into solid targets

A physicomathematical model and a BEAM2HD program for the dynamic simulation of one-and two-beam high-dose ion implantation into multilayer and multicomponent targets are developed. The number of target layers is no more than three, and the number of sorts of atoms in each of the layers is no more than seven. The simulation is performed by the Monte Carlo method. Numerical results for the formation of C _x→3N _y→4 superhard layers by two-beam high-dose implantation of nitrogen ions into the Si₃N₄/C/Si₃N₄/Si system are presented.     

The comparison of reactive ion etching and plasma etching in a parallel-plate reactor

Reactive ion etching (RIE) and plasma etching (PE) of different materials (GaAs, Si₃N₄ SiO₂ and photoresist Microposit 1350 H) in freon 116 are compared in the present article. The importance of ion bombardment for the etching rate is evident from the experimental results. GaAs is etched only by RIE due to ion milling, the etching rates of Si₃N₄ and SiO₂ are 4 to 5 times higher by RIE than PE.     

Scanning probe oxidation of Si3N4 masks for nanoscale lithography,micromachining, and selective epitaxial growth on silicon

For studying the physical, chemical, and electronic properties of ultrasmall man-made structures, the major challenge is to fabricate highly uniform structures and control their positions on the nanometer length scale. Local oxidation of metals and semiconductors using a conductive-probe atomic force microscope (AFM) or other scanning probe microscopes in air at room temperature has emerged as a simple and universal method for this purpose. Here the uses of scanning probe oxidation of Si₃N₄ masks for performing nanolithography, nanomachining, and nanoscale epitaxial growth on silicon are reviewed. The three most unique features of this approach are presented: (1) exceptionally fast oxidation kinetics using silicon nitride masks (∼30 μm/s at 10 V for a ∼5-nm-thick film); (2) selective-area anisotropic etching of Si using a Si₃N₄ etch mask; and (3) selective-area chemical vapor deposition of Si using a SiO₂/Si₃N₄ bilayer growth mask.     

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si₃N₄ (Si⁴⁺) but also in the intermediate nitridation states with one (Si¹⁺) or three (Si³⁺) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si¹⁺, Si³⁺, and Si⁴⁺ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si⁴⁺ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si₃N₄ by molecular beam epitaxy (MBE).     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

AlN/Si3N4纳米多层膜的外延生长与力学性能

采用射频磁控溅射方法制备单层AlN, Si₃N₄薄膜和不同调制周期的AlN/Si₃N₄纳米多层膜.采用X射线衍射仪、高分辨透射电子显微镜和纳米压痕仪对薄膜进行表征.结果发现,多层膜中Si₃N₄层的晶体结构和多层膜的硬度依赖于Si₃N₄层的厚度.当AlN层厚度为4.0nm、 Si₃N₄层厚度 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 应力场 超硬效应     

Changes in surface stress, morphology and chemical composition of silica and silicon nitride surfaces during the etching by gaseous HF acid

HF acid attack of SiO₂ and Si₃N₄ substrates is analyzed to improve the sensitivity of a sensor based on microcantilever. Ex situ analysis of the etching using XPS, SIMS and AFM show significant changes in the anisotropy and the rate of the etching of the oxides on SiO₂ and Si₃N₄ surface. Those differences influence the kinetic evolution of the plastic bending deflection of the cantilever coated with SiO₂ and Si₃N₄ layer, respectively. The linear dependence between the HF concentration and the Si₃N₄ cantilever bending corresponds to a deep attack of the layer whereas the non-linear behavior observed for SiO₂ layer can be explained by a combination of deep and lateral etching. The cantilever bending is discussed in terms of free surface energy, layer thickness and grain size.     

Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6

Silicon nitride (Si₃N₄) and oxynitride (Si₂N₂O) were deposited by chemical vapor infiltration (CVI) through a novel route involving the in-situ thermal decomposition of Na₂SiF₆ in commercial nitrogen precursors containing impurity oxygen. In addition, the quantitative effect of processing time (30, 60, 90, 120 min), temperature (1000, 1100, 1200 and 1300 °C), nitrogen precursor (N₂ or N₂-5%NH₃) and gas flow rate (46.5, 93, 120 and 240 cm³/min) on phase percentage and deposition rate of Si₃N₄ and Si₂N₂O was investigated. Analysis of variance shows that the parameter that most significantly impacts the total amount of deposited phase is the processing temperature, followed by processing time and nitrogen precursor. Regardless of the nitrogen precursor, at 1300 °C, Si₃N₄ and Si₂N₂O depositions follow an S-like and parabolic behavior, respectively. The incubation period shown by Si₃N₄ in N₂-5%NH₃ is associated to a decrease in the O₂ partial pressure during Si₂N₂O formation while the rapid increase at long processing times is attributed to the enhanced effect of hydrogen. PACS 81.15.Gh; 81.05.Je; 81.15.-z; 81.05.Rm; 47.85.L-     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si₃N₄层在ZrN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响. 一系列不同Si₃N₄层厚度的ZrN/Si₃N₄纳米多层膜通过反应磁控溅射法制备. 利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明，由于受到ZrN调制层晶体结构的模板作用，溅射条件下以非晶态存在的Si₃N₄层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体，ZrN/Si₃N₄纳米多层膜形成共格外延生长的柱状晶，并相应地产生硬度升高的超硬效应. Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.     

Laser ablation time-of-flight mass spectrometry (LA-TOF-MS) of “nitrogen doped diamond-like carbon (DLN) nano-layers”

Nitrogen-doped diamond-like carbon (DLC) layers (a-C:H:N, N-DLC or DLN) were prepared by the plasma-enhanced chemical vapor deposition (PECVD) technique, using a RF capacitive discharge (13.56 MHz), at low pressures (20 Pa), produced from a mixture of methane, nitrogen and hexamethyldisiloxane (HMDSO), deposited on single-crystalline silicon wafers placed on steel samples. The films, of differing deposition times, were subjected to laser ablation time-of-flight (LA-TOF) mass spectrometric measurements, using different commercial instrumentation to characterize their structures. The analysis of mass spectra was made and the following positively singly charged species were detected and identified: C_n⁺ (n=4–30), Si_n⁺ (n=2, 3), Si_nH⁺ (n=2, 3), SiOK⁺, Si₃H₄⁺, Si₂N⁺, Si₂NH₂⁺, and Si₃C⁺. The later three species could reflect the presence of nitrogen–silica and carbon–silica chemical bonds in the structure of the DLN layer. The stoichiometry of all species was confirmed by isotopic pattern simulation. In the negative detection mode, the C_n⁻ (n=2–12) clusters were observed. The findings are discussed in the light of the current research concerning analysis of the DLN thin layers and it is concluded that namely Si₂N⁺, Si₂NH₂⁺ and Si₃C⁺ species are reflecting the chemical structure of the DLN layer. LA-TOF-MS was found useful supplementary method for the characterization of DLN nano-layers.     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

X-ray photoemission and X-ray absorption studies of Hf-silicate dielectric layers

Photoelectron spectroscopy and X-ray absorption spectroscopy (XAS) measurements have been performed on HfSi_xO_y and HfSi_xO_yN_z dielectric layers, which are potential candidates as high-k transistor gate dielectrics. The hafnium silicate layers, 3-4 nm thick, were formed by codepositing HfO₂ and SiO₂ (50%:50%) by MOCVD at 485 °C on a silicon substrate following an IMEC clean. Annealing the HfSi_xO_y layer in a nitrogen atmosphere at 1000 °C resulted in an increase in the Si⁴⁺ chemical shift from 3.5 to 3.9 eV with respect to the Si⁰ peak. Annealing the hafnium silicate layer in a NH₃ atmosphere at 800 °C resulted in the incorporation of 10% nitrogen and the decrease in the chemical shift between the Si⁴⁺ and the Si⁰ to 3.3 eV. The results suggest that the inclusion of nitrogen in the silicate layer restricts the tendency of the HfO₂ and the SiO₂ to segregate into separate phases during the annealing step. Synchrotron radiation valence band photoemission studies determined that the valence band offsets were of the order of 3 eV. X-ray absorption measurements show that the band gap of these layers is 4.6 eV and that the magnitude of the conduction band offset is as little as 0.5 eV.     

Dopant activation in Sb-implanted relaxed Si1−xGex alloy layers grown on compositionally graded buffers

Supersaturated solid solutions of substitutional, electrically active Sb have been obtained by ion implantation of relaxed epitaxial Si_1?xGe_x alloy layers grown on compositionally graded buffers. Substitutional and nonsubstitutional Sb fractions in relaxed Si_0.85Ge_0.15, Si_0.65Ge_0.35 and Si_0.50Ge_0.50 alloy layers implanted to a dose of 5×10¹⁵ Sb cm^?2 and annealed isothermally at temperatures ranging from 400 to 850°C have been studied by Rutherford backscattering/channeling, transmission electron microscopy and Hall-effect and sheet resistivity measurements. A supersaturated solution of Sb corresponding to a peak carrier concentration of 4×10²⁰ cm^?3 and an electrically active fraction of 40% of the implanted dose is observed by Hall measurements for the case of Si_0.85Ge_0.15 and Si_0.65Ge_0.35 alloys annealed at 550°C.     

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

The chemical and phase compositions of silicon oxide films with self-assembled nanoclusters prepared by ion implantation of carbon into SiO _x (x < 2) suboxide films with subsequent annealing in a nitrogen atmosphere have been investigated using X-ray photoelectron spectroscopy in combination with depth profiling by ion sputtering. It has been found that the relative concentration of oxygen in the maximum of the distribution of implanted carbon atoms is decreased, whereas the relative concentration of silicon remains almost identical over the depth in the layer containing the implanted carbon. The in-depth distributions of carbon and silicon in different chemical states have been determined. In the regions adjacent to the layer with a maximum carbon content, the annealing results in the formation of silicon oxide layers, which are close in composition to SiO₂ and contain silicon nanocrystals, whereas the implanted layer, in addition to the SiO₂ phase, contains silicon oxide species Si²⁺ and Si³⁺ with stoichiometric formulas SiO and Si₂O₃, respectively. The film contains carbon in the form of SiC and elemental carbon phases. The lower limit of the average size of silicon nanoclusters has been estimated as ∼2 nm. The photoluminescence spectra of the films have been interpreted using the obtained results.     

AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers

In this paper, a new gate-recessed AlGaN/GaN-based high electron mobility transistor (HEMT) on SiC substrate is proposed and its DC as well as microwave characteristics are discussed for Si₃N₄ and SiO₂ passivation layers using technology computer aided design (TCAD). The two-dimensional electron gas (2DEG) transport properties are discussed by solving Schr?dinger and Poisson equations self-consistently resulting in various subbands having electron eigenvalues. From DC characteristics, the saturation drain currents are measured to be 600?mA/mm and 550?mA/mm for Si₃N₄ and SiO₂ passivation layers respectively. Apart from DC, small-signal AC analysis has been done using two-port network for various microwave parameters. The extrinsic transconductance parameters are measured to be 131.7?mS/mm at a gate voltage of V _gs?= ?0.35?V and 114.6?mS/mm at a gate voltage of V _gs?= ?0.4?V for Si₃N₄ and SiO₂ passivation layers respectively. The current gain cut-off frequencies (f _t) are measured to be 27.1?GHz and 23.97?GHz in unit-gain-point method at a gate voltage of ?0.4?V for Si₃N₄ and SiO₂ passivation layers respectively. Similarly, the power gain cut-off frequencies (f _max) are measured to be 41?GHz and 38.5?GHz in unit-gain-point method at a gate voltage of ?0.1?V for Si₃N₄ and SiO₂ passivation layers respectively. Furthermore, the maximum frequency of oscillation or unit power gain (MUG = 1) cut-off frequencies for Si₃N₄ and SiO₂ passivation layers are measured to be 32?GHz and 28?GHz respectively from MUG curves and the unit current gain, ?O?h ₂₁??O?=?1 cut-off frequencies are measured to be 140?GHz and 75?GHz for Si₃N₄ and SiO₂ passivation layers respectively from the abs ?O?h ₂₁??O curves. HEMT with Si₃N₄ passivation layer gives better results than HEMT with SiO₂ passivation layer.     

Fabrication of high-aspect-ratio silicon nanostructures using near-field scanning optical lithography and silicon anisotropic wet-etching process

A new process in which near-field scanning optical lithography (NSOL) is combined with anisotropic wet-etching of (110) silicon is developed for the fabrication of high-aspect-ratio (HAR) nanochannels. In the proposed process, NSOL is applied to produce nanopatterns on a commercial positive photoresist as in an optical lithography. The use of a commercial photoresist is an advantage of this process because it allows the direct application of many photoresists currently available without pretreatment, saving cost and time. A bare (110) silicon wafer coated with a thin Si₃N₄ layer, of approximately 10 nm thickness, is used as the sample and the photoresist is spincoated on the Si₃N₄ layer to a thickness of about 50–80 nm. Nanopatterning of the photoresist using a contact mode NSOL, transfer of the photoresist pattern onto the Si₃N₄ layer by reactive ion etching, and anisotropic wet etching of the silicon wafer using the patterned Si₃N₄ layer as an etch mask, lead to the intended HAR nanostructures. Fabrication of silicon nanochannels with a channel width below 150 nm and an aspect ratio greater than 3 is demonstrated. PACS 81.16.Nd; 81.16.Rf; 85.40.Hp     

Secondary ion species containing nitrogen atoms from plasma-enhanced chemical vapor deposited silicon oxide films on silicon

Secondary ion species from plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Comparative studies of PECVD SiO₂ films prepared using a mixture of SiH₄/N₂O reaction gas at 400 °C with thermally oxidized SiO₂ films grown at 900 °C were carried out in the mid-range mass spectra from 95 to 165 amu. Small amounts of ion species containing nitrogen atoms, including Si₂O₂N⁺, Si₃O₂N⁺and Si₃O₃N⁺, were detected in the SiO₂ bulk from the PECVD SiO₂ films. Furthermore, large amounts of Si₃O₂N⁺ and Si₂O₃N⁻ were found at the interface between silicon and the SiO₂ films. Depth analysis showed that the intensity peak shapes of these ion species containing nitrogen atoms at the interface were closely coincident with those of Si₃O₃⁺ corrected by subtracting the influence of the SiO₂ matrix. The variation in the spectra of these ion species clearly indicates that two types of structures of oxynitride exist for the PECVD SiO₂ films in the SiO₂ bulk films and at the interface. These are likely produced by the reaction of reactive gas with SiO₂ and silicon surfaces where dangling bonds of silicon may exist in the different form.     

Highly Efficient pc-LED Phosphors Sr1-xBaxSi2O2N2:Eu2+ (0 x 1) - Crystal Structures and Luminescence Properties Revisited

Due to their excellent luminescence properties in the blue-green to green-yellow spectral region, oxonitridosilicates Sr_1-xBa_xSi₂O₂N₂:Eu²⁺ (0 x 1) are promising conversion materials for application in phosphor-converted high-power LED devices. In order to understand the properties and thus to fully exploit the potential of these materials, detailed knowledge of corresponding (local) crystal structures is indispensable. Detailed insights into real structures have been achieved by combining X-ray diffraction and electron-microscopy methods. A major reason for the excellent luminescence properties of the phases Sr_1-xBa_xSi₂O₂N₂:Eu²⁺ (0 x 1) is the rigid silicate substructure built up of two-dimensionally condensed SiON₃ tetrahedra. The general topology of these layers is analogous for all members. However, there is no complete solid-solution series. Crystal-structure determination was frequently not straightforward because several real-structure effects had to be considered. The relative orientation of the silicate layers and the metal-atom layers inserted between them can differ without changing the chemical composition. As a consequence, polytypes are formed. The differentiation between such closely related structures was only possible by a thorough analysis of crystallographic data. The same applies for phases which differ in their composition as all Sr_1-xBa_xSi₂O₂N₂:Eu²⁺ (0 x 1) phases are very similar. The literature on these compounds is critically discussed with respect to phase analysis and structure determination. Different synthesis routes are reviewed and the results of luminescence investigations are discussed in this contribution. Beyond thermal as well as chemical stability and high transparency, electron-phonon coupling is effectively suppressed in Sr_1-xBa_xSi₂O₂N₂:Eu²⁺ (0 x 1) phases. Therefore, primary UV to blue light (GaN based semiconductor LEDs) is efficiently converted into visible components of the spectrum. Sr_1-xBa_xSi₂O₂N₂:Eu²⁺ (0 x 1) phases are therefore promising oxonitridosilicate phosphors for application in LED industry.     

The evolution of magnetic,electrical and structural properties of nanogranular [FeCoBN/SiN]×n thin films

Some results concerning the magnetic, electrical and microstructural properties of multilayer [FeCoBN/Si₃N₄]×n films in view of their utilization for manufacturing thin film magnetic inductors are presented. A comparison between the magnetic, electrical and structural properties of FeCoBN and [FeCoBN/Si₃N₄]×n thin films is also reported. The [FeCoBN/Si₃N₄]×n thin films with the thickness of the FeCoBN layers varied from 10 to 30 nm, exhibit good soft magnetic characteristics and high values for electrical resistivity such as Ms of 172–185 A m²/kg, Hc of 318–1433 A/m and ρ of 82–48×10⁻⁷ Ω m, respectively. These physical properties of the samples are discussed in relation with the microstructure of the multilayer system.     

低能离子注入形成氮化硅薄膜特性的研究

低能离子束与表面相互作用主要呈现溅射、注入等现象。本文研究了在1.35keVN₂⁺离子注入形成氮化硅的特性,并研究了注入和溅射的并存过程。在高剂量、低能(<10keV)注入的情况下,提出了有效剂量的概念,并建立了刻蚀速率、射程与有效注入剂量的关系。还用俄歇电子能谱(AES)、X射线光电子能谱(XPS)、透射电子显微镜(TEM)、背散射分析(RBS)测定了薄膜的有关特性。 关键词：