共查询到19条相似文献,搜索用时 218 毫秒
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以法拉第电磁感应现象中的一道习题为例,简单地探讨了利用辅助线处理电磁场问题时应该注意的
一些事项 相似文献
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Summary The purpose of this paper is to cast light on various serious mistakes which have been involved during the analysis of two
experiments, related to the correctness of the Biot-Savart-Lorentz force law. At first in the MIT experiment, carried out
by Graneauet al., they claim that the calculated momentum, imparted to an electrodynamic-impulse pendulum, using the BSL force law, is 43%
larger than the experimentally measured momentum of the pi-frame pendulum. We have found that this discrepancy, using their
own data,is due to the use of a wrong value for the time constant parameter introduced in the current formula. In addition Pappas, like Graneau, although states that all the available energy is dissipated to Joule heating, considers
that all the pendulum momentum is imparted to field momentum yielding an enormous amount of field-radiated energy, which is
also completely wrong.
To speed up pubblication, the authors of this paper have agreed to not receive the proofs for correction. 相似文献
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介绍了电磁感应和超导基本理论的实际应用-磁悬浮列车。以日本超导磁悬浮列车为例,阐述其作用原理,介绍了超导磁悬列车的发展状况。指出在物理教学中,理论学习与实际应用相结合是提高学生学习兴趣和培养创新能力的有效途径。 相似文献
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电磁学的核心就是麦克斯韦方程组,今天它被认为是物理学中最美的方程组之一.本文主要介绍了麦克斯韦当初如何通过构建力学模型来解释电磁感应定律和发现了位移电流,从而完整地发展出了麦克斯韦方程组. 相似文献
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对法拉第电磁转动实验进行了改进,用铜盘代替水银并设计了转子,制作单根导线电动机,该电动机适宜在中学物理课堂教学中使用. 相似文献
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在超薄样室原子介质的受限系统中,观察了处于电磁诱导吸收条件下四波混频信号增强现象.实验结果表明增强效应与量子调控所产生的光子带隙有关,而光子带隙结构的变化会对四波混频信号起到增强或抑制的作用. 相似文献
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This paper reports that the organic field-effect transistors with
hybrid contact geometry were fabricated, in which the top electrodes
and the bottom electrodes were combined in parallel resistances
within one transistor. With the facility of the novel structure, the
difference of contact resistance between the top contact geometry
and the bottom contact geometry was studied. The hybrid contact
devices showed similar characteristics with the top contact
configuration devices, which provide helpful evidence on the lower
contact resistance of the top contact configuration device. The
origin of the different contact resistance between the top contact
device and the bottom contact device was discussed. 相似文献