Investigation on achieving the diode-pumped weak line laser at 1.3 μm

In this paper, a continuous-wave (CW) diode-side-pumped Nd:YAlO₃ (Nd:YAP) laser operating at the weak line of 1339 nm has been achieved and investigated. The output of the 1339 nm laser was realized based on the polarization selection and reasonable transmittance design. The relationship between the output powers and resonator lengths of the 1339 nm Nd:YAP laser has been studied and the optimum resonator length was adopted to improve the output power. As high as 31.3 W output power of the a-axis polarized 1339 nm laser has been obtained at the pumping power of 555 W with the optical-optical and slope efficiencies to be 5.6% and 13%, respectively. This work will provide an effective way to obtain the weak line lasers for potential applications in spectroscopy, coherent terahertz generation, etc.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

LD end pumped mode locked and cavity dumped Nd:YAP laser at 1.34 μm

We report a LD end pumped actively mode locked, passively Q switched and cavity dumped Nd:YAP laser at 1.34 μm. The dumped output pulse energy of 160 μJ is obtained at a repetition rate of 10 Hz. Passing through a LD end pumped, double-passed Nd:YAP amplifier the pulse energy is amplified to 1.44 mJ. The corresponding amplification factor is 9. Stimulated Raman scattering experiment is taken with a 9 mm long PbWO₄ Raman crystal. Maximum of 20% Raman conversion is reached.     

Pulsed Nd:YAP laser at 1432 nm pumped with high power laser diode

LD end pumped Nd:YAP laser operation in the eye safe spectrum region at 1432 nm is reported. With pump energy of 256 mJ, maximum linearly polarized output of 26 mJ is obtained. The optical-to-optical overall efficiency is around 10%, and the slope efficiency is around 18%. The laser beam operates with spiking mode with a total emission period of less than 300 µs at 10 Hz. The stimulated emission cross section is estimated at around 0.85 × 10^− 20 cm².     

1.3414 μm Nd:YAP pulse laser in Q-switched mode

In this paper, a flash-lamp pumped 1.3414 μm Nd:YAP Q-switched pulse laser are presented. The experimental results for about 45 ns of pulse duration and more than 300 mJ of output energy have been obtained and discussed.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Diode-pumped Nd:BaY2F8 picosecond laser

Picosecond pulse generation at 1050 nm by a diode-pumped Nd:BaY₂F₈ (Nd:BaYF) active crystal has been investigated under low-power pumping (440 mW absorbed). The sample was oriented along the optical axes and cut at Brewster angle for y-axis laser polarization to minimize birefringence effects. Stable passive mode-locking operation has been achieved by inverse saturable absorption with 80-mW output power and 3.7-ps pulses.     

A Q-switched Nd:YAlO3 laser emitting 1080 and 1342 nm

In this paper, the study of a switchable electro-optic Q-switched Nd:YAlO₃ laser emitting 1080 and 1342 nm wavelength was demonstrated. The two-wavelength lasers were eradiated by a Nd:YAlO₃ crystal pumped by a xenon lamp. Two KD*P Pockels cells were adopted as Q-switches. The output energy of 277.2 mJ at 1080 nm wavelength with a pulse width of 20 ns and that of 190.67 mJ at 1342 nm wavelength with a pulse width of 40 ns was obtained, respectively, in our experiment. By switching on or off the voltages applied to the Pockels cells, the operation of the two-wavelength lasers can be selected in free running mode or Q-switching mode.     

Gain-saturated Ni-like antimony laser at 11.4 nm in grazing-incidence pumping geometry

We report on gain-saturated operation of the 4d → 4p, J = 0-1, 11.4 nm soft-X-ray laser line in Ni-like antimony (Sb) at a pump energy of only 2.5 J. The driving laser used was a 1054 nm Nd:glass CPA laser system with a pulse duration of 7 ps (FWHM). The pump beam was focused with a tilted on-axis parabolic mirror in a grazing-incidence (GRIP) pumping configuration at an incidence angle of 45°. A fraction of 2.8% of the pump energy (∼70 mJ) was used for the prepulse, which was propagated along the same beam line as the main pulse and arrived at the target 4.4 ns before the main pulse.     

6.2 W laser-diode end-pumped continuous-wave Nd:YALO3 laser at 1.34 μm

We report a compact and efficient LD end-pumped linearly polarized Nd:YAP laser operating at 1.34 μm. The laser system with different crystal lengths, output couplers and cavity types were compared. Based on optimizing of the pump system and laser cavity, 6.2 W laser radiation at 1341.4 nm with c-axis polarized was achieved, corresponding to an optical conversion efficiency of about 24.8% with respect to the incident pump power. The laser threshold was only about 1.3 W and the optical slope efficiency was up to 27.2%.     

High-beam-quality, 5.1 J, 108 Hz diode-pumped Nd:YAG rod oscillator-amplifier laser system

A high efficiency, high beam quality diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with six amplifier stages is demonstrated. The oscillator with two-rod birefringence compensation was designed as a thermally determined near hemispherical resonator, which presents a pulse energy of 223 mJ with a beam quality value of M² = 1.29 at a repetition rate of 108 Hz. The MOPA system delivers a pulse energy of 5.1 J with a pulse width of 230 μs, a M² factor of 3.6 and an optical-to-optical efficiency of 38.5%. To the best of our knowledge, this is the highest pulse energy for a diode-pumped Nd:YAG rod laser operation with a high beam quality and a pulse width of hundreds of microseconds at a repetition rate of over 100 Hz.     

Diode-end-pumped frequency-doubled Nd:YAP/Cr:YAG laser using a KTP crystal

We present a design for a compact laser-diode-end-pumped Nd:YAP/Cr:YAG q-switched laser in a plano?Cconcave cavity configuration. With an optical-to-optical efficiency of 35%, this laser provides an average output of 1.2 W with 13 mJ at 1080 nm. After that, the laser is frequency doubled by replacing the output coupler with a flat KTP crystal to achieve an output of 8 mJ in 8 ns at 540 nm. At a peak power of 1 MW, the laser emits linearly polarized output with an average power of 800 mW. The calculated M² value is 1.3, the output is very stable, and the laser operates in the TEM₀₀ mode.     

1097 nm Nd:YVO4 self-Raman laser

An acousto-optically Q-switched self-Raman laser emitting at 1097 nm is demonstrated with a c-cut Nd:YVO₄ crystal, using a fiber-coupled 880 nm diode laser as the pumping source. Raman laser performances in concave-plane and plane-plane oscillating cavities are studied and compared. With an absorbed diode power of 12.4 W and a pulse repetition rate of 50 kHz, the highest output power of 1.45 W is obtained from the plane-plane cavity, corresponding to an optical-to-optical conversion efficiency of 11.7%.     

124 W diode-side-pumped Nd:YAG laser in dynamic fundamental mode

A high power dynamic fundamental mode Nd:YAG laser is experimentally demonstrated with a stagger-pumped laser module and a V-shaped resonator. The rod is pumped symmetrically by staggered bar modules. And dynamic fundamental mode is achieved under different pump levels. The maximal continuous wave (CW) output of 124 W (M²=1.4) is achieved with a dual rod. Average output of 112 W, pulse width of 120 ns, pulse energy of 11.2 mJ and peak power of 93 kW are obtained in Q-switched operation of 10 kHz.     

Three-level operation of a diode-bar-pumped Yb:S-FAP laser

We present an all solid-state Yb:S-FAP laser system running on the three-level laser transition at 985 nm. The pump source was a high fill-factor laser diode bar, with the output reformatted using a two-mirror beamshaping system to produce a rectangular pump beam that focused to a square spot. A nearly on-axis multipassing system was used to obtain four pump passes through a 1.6 mm Yb:S-FAP laser crystal. Gain-switched three-level laser output was achieved with an efficiency of 4.3% with respect to incident pump power. Electro-optic Q-switching produced 0.12 mJ pulses for a pump pulse energy of 11 mJ. Intra-cavity second-harmonic generation yielded a maximum pulse energy at 492.5 nm of 12 μJ.     

Enhanced near field mediated nanohole fabrication on silicon substrate by femtosecond laser pulse

Investigation of the process of nanohole formation on silicon surface mediated with near electromagnetic field enhancement in vicinity of gold particles is described. Gold nanospheres with diameters of 40, 80 and 200 nm are used. Irradiation of the samples with laser pulse at fluences below the ablation threshold for native Si surface, results in a nanosized surface modification. The nanostructure formation is investigated for the fundamental (λ = 800 nm, 100 fs) and the second harmonic (λ = 400 nm, 250 fs) of the laser radiation generated by ultrashort Ti:sapphire laser system. The near electric field distribution is analyzed by an Finite Difference Time Domain (FDTD) simulation code. The properties of the produced morphological changes on the Si surface are found to depend strongly on the polarization and the wavelength of the laser irradiation. When the laser pulse is linearly polarized the produced nanohole shape is elongated in the E-direction of the polarization. The shape of the hole becomes symmetrical when the laser radiation is circularly polarized. The size of the ablated holes depends on the size of the gold particles, as the smallest holes are produced with the smallest particles. The variation of the laser fluence and the particle size gives possibility of fabricating structures with lateral dimensions ranging from 200 nm to below 40 nm. Explanation of the obtained results is given on the basis simulations of the near field properties using FDTD model and Mie's theory.     

A compact and efficient four-wavelength Q-switched Nd:YAP laser

In this paper, a four-wavelength electro-optic (E-O) Q-switched solid-state laser system was presented. This laser system only use one Nd:YAP laser crystal, which irradiates 1079.5 nm and 1341.4 nm fundamental wavelengths. Both of these wavelength lasers and their second harmonic generation (SHG) compose a four-wavelength Nd:YAP Q-switched laser. The Q-switched output energies of 277 mJ for 1079.5 nm and 61 mJ for 539.8 nm and that of 190 mJ for 1341.4 nm and 51 mJ for 670.7 nm wavelengths were achieved. The pulse durations of 1079.5 and 539.8 nm lasers and that of 1341.4 and 670.7 nm lasers are 20 and 40 ns, respectively. Due to this laser system has the larger chance and convenience for selecting the wavelengths and operation modes by moving a stepping motor and controlling the Q-switched devices, it will broaden applications in the fields of laser cosmetology, dermatotis therapy, material processing and laser display etc.     

Picosecond pulsed laser ablation and micromachining of 4H-SiC wafers

Ultra-short pulsed laser ablation and micromachining of n-type, 4H-SiC wafer was performed using a 1552 nm wavelength, 2 ps pulse, 5 μJ pulse energy erbium-doped fiber laser with an objective of rapid etching of diaphragms for pressure sensors. Ablation rate, studied as a function of energy fluence, reached a maximum of 20 nm per pulse at 10 mJ/cm², which is much higher than that achievable by the femtosecond laser for the equivalent energy fluence. Ablation threshold was determined as 2 mJ/cm². Scanning electron microscope images supported the Coulomb explosion (CE) mechanism by revealing very fine particulates, smooth surfaces and absence of thermal effects including melt layer formation. It is hypothesized that defect-activated absorption and multiphoton absorption mechanisms gave rise to a charge density in the surface layers required for CE and enabled material expulsion in the form of nanoparticles. Trenches and holes micromachined by the picosecond laser exhibited clean and smooth edges and non-thermal ablation mode for pulse repetition rates less than 250 kHz. However carbonaceous material and recast layer were noted in the machined region when the pulse repetition rate was increased 500 kHz that could be attributed to the interaction between air plasma and micro/nanoparticles. A comparison with femtosecond pulsed lasers shows the promise that picosecond lasers are more efficient and cost effective tools for creating sensor diaphragms and via holes in 4H-SiC.     

Electro-optic Q-switched intracavity optical parametric oscillator at 1.53 μm based on KTiOAsO4

An eye-safe, high peak power optical parameter oscillator (OPO) intracavity pumped by electro-optic Q-switched Nd:YAG laser is presented. This OPO is based on a 20 mm length KTiOAsO₄ crystal with non-critical phase matching (θ = 90°, ?=0°) cut. An aperture ∅3 mm acted as limiting diaphragm to get good beam quality of pumping laser. The output energy of 25 mJ at the signal wavelength 1.53 μm was obtained with repetition rate of 1 Hz. The highest peak power intensity was up to 88 MW/cm² with pulse width of 4 ns. Without diaphragm, the maximum output energy of 90 mJ was achieved with area of light spot (∅6 mm) four times larger, but the peak power intensity was lower.     

Femtosecond and nanosecond laser damage thresholds of doped and undoped triazenepolymer thin films

The influence of pulse duration on the laser-induced damage in undoped or infrared-absorbing-dye doped thin triazenepolymer films on glass substrates has been investigated for single, near-infrared (800 nm) Ti:sapphire laser pulses with durations ranging from 130 fs up to 540 fs and complementarily for infrared (1064 nm) Nd:YAG ns-laser single-pulse irradiation. The triazenepolymer material has been developed for high resolution ablation with irradiation at 308 nm. Post-irradiation optical microscopy observations have been used to determine quantitatively the threshold fluence for permanent laser damage. In contrast to our previous studies on a triazenepolymer with different composition [J. Bonse, S.M. Wiggins, J. Solis, T. Lippert, Appl. Surf. Sci. 247 (2005) 440], a significant dependence of the damage threshold on the pulse duration is found in the sub-picosecond regime with values ranging from ∼500 mJ/cm² (130 fs) up to ∼1500 mJ/cm² (540 fs). Other parameters such as the film thickness (50 nm and 1.1 μm samples) or the doping level show no significant influence on the material behavior upon irradiation. The results for fs- and ns-laser pulse irradiation are compared and analyzed in terms of existent ablation models.