Repulsive and bound parts of the interatomic potentials of the lowest singlet electronic energy states of the MeRg complexes (Me = Zn, Cd; Rg = He, Ne, Ar, Kr, Xe)

Laser-induced fluorescence excitation spectra of MeRg (Me = Zn, Cd; Rg = He, Ne, Ar, Kr, Xe) complexes were recorded using the D¹ ← X¹ free ← bound transition. The complexes were produced in their ground state in a free-jet expansion beam and excited with a dye-laser beam directly to the excited state. Analysis of free ← bound unstructured profiles provided a shape of the repulsive part of the D¹-state potentials. Valence ab initio calculations of the ZnRg and CdRg ground- and excited-state potentials and electronic transition dipole moments for the studied transition were performed, taking scalar relativistic and spin-orbit effects into account. Results of the calculations show regularities and correlations in the repulsive branches and bound wells of the X¹- and D¹-state potentials as well as provide information on the bonding character in both electronic energy states. The trends were compared with available experimental results for ZnRg and CdRg as well as for MgRg and HgRg.     

Magnetoelastic instability in Ising-like models

The magnetoelastic instability in nanostructured ring-shaped Ising-like spin 1/2 model has been investigated by using the exact diagonalization method. It is found that there exists two critical anisotropy parameters and () in the phase diagram. As the anisotropy parameter , the magnetoelastic transition from dimerized phase to uniform phase is a first order transition with an increase of the lattice spring constant. While for , the transition is continuous. Another critical value divides the different lattice distortion behavior as the anisotropy is strengthened.     

Photoemission study of the Li/Ge(1 1 1)-3 × 1 reconstruction

In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.     

Resonant enhancement of the formation of hydrogen-helium muonic molecules

Formation of muonic molecules and , where J is rotational quantum number, in electron conversion process is investigated at collision energies between 0.004 eV and 50 eV. Corresponding reaction rates are calculated in adiabatic approximation for the three-body Coulomb problem. Significant enhancement of the rates for and is found near 7 eV and 30 eV, respectively. It is shown that the enhancement is due to resonances present in elastic and scattering at these energies. Acceleration of dμ atoms up to the resonant energy could be realized in triple H-D-³He mixture due to the muon transfer from protium to deuterium. Experimental investigation of nuclear synthesis from molecular state directly formed in the mixture is suggested.     

Laser excitation spectrum of C3 in the region 26 000-30 700 cm

The vibrational structure of the electronic state of C₃ in the region 26 000-30 775 cm⁻¹ has been re-examined, using laser excitation spectra of jet-cooled molecules. Rotational constants and vibrational energies have been determined for over 60 previously-unreported vibronic levels; a number of other levels have been re-assigned. The vibrational structure is complicated by interactions between levels of the upper and lower Born-Oppenheimer components of the state, and by the effects of the double minimum potential in the Q₃ coordinate, recognized by Izuha and Yamanouchi [16]. The present work shows that there is also strong anharmonic resonance between the overtones of the ν₁ and ν₃ vibrations. For instance, the levels 2 1⁺ 1 and 0 1 ⁺ 3 are nearly degenerate in zero order, but as a result of the resonance they give rise to two levels 139 cm⁻¹ apart, centered about the expected position of the 2 1⁺ 1 level. With these irregularities recognized, every observed vibrational level up to 30 000 cm⁻¹ (a vibrational energy of over 5000 cm⁻¹) can now be assigned. A vibronic level at 30181.4 cm⁻¹, which has a much lower B′ rotational constant than nearby levels of the state, possibly represents the onset of vibronic perturbations by the electronic state; this state is so far unknown, but is predicted by the ab initio calculations of Ahmed et al. [36].     

Terahertz spectroscopy of oxygen, O2, in its Σg and Δ electronic states : THz Spectroscopy of O2

High precision rotational spectra of isotopic oxygen O₂ (with or ) in its electronic ground state have been measured in selected frequency regions between 0.4 and 2.0 THz. The main isotopic species, , was also investigated in its first excited electronic state . The new data, analyzed together with previous measurements, yielded improved spectroscopic parameters.     

Surface defect states of CdTexS1 − x quantum dots

Properties of surface defect states of CdTe_xS_1 − x quantum dots with an average diameter of 7 nm are investigated experimentally. The stoichiometric ratio is found to be for by use of the energy dispersive analysis of x-ray. The photoluminescence spectrum, the photoluminescence excitation spectrum, and the surface passivation are adopted to characterize the properties of surface defect states. The energy levels of surface defect states of CdTe_xS_1 − x quantum dots are also determined.     

Computation of energy exchanges by combining information theory and a key thermodynamic relation: Physical applications

By considering a simple thermodynamic system, in thermal equilibrium at a temperature T and in the presence of an external parameter A, we focus our attention on the particular thermodynamic (macroscopic) relation . Using standard axioms from information theory and the fact that the microscopic energy levels depend upon the external parameter A, we show that all usual results of statistical mechanics for reversible processes follow straightforwardly, without invoking the Maximum Entropy principle. For the simple system considered herein, two distinct forms of heat contributions appear naturally in the Clausius definition of entropy, . We give a special attention to the amount of heat , associated with an infinitesimal variation at fixed temperature, for which a “generalized heat capacity”, , may be defined. The usefulness of these results is illustrated by considering some simple thermodynamic cycles.     

The magnetocaloric effect and low temperature specific heat of SmNi

The magnetocaloric effect (MCE) in a magnetic SmNi sample was evaluated from magnetization and heat capacity measurements. The MCE phenomena in the vicinity of magnetic phase transitions in terms of magnetic entropy change, , and adiabatic temperature change, , are reported. Isothermal magnetization measurements at several temperatures around the transition were carried out and used for versusT calculations. A similar dependence of the magnetic entropy change was evaluated from heat capacity C_p(T) measurements under zero field and 5 T. The SmNi system provides magnetic refrigerants that induce an adiabatic cooling of about during the magnetization process with a field of 5 T in the temperature range of 35-45 K. The temperature dependence of C_p(T) is analyzed in terms of the magnetic and the lattice contributions.     

NaCl islands decorated with 2D or 3D 3,4,9,10-perylene-tetracarboxylic-dianhydride nanostructures

The formation of PTCDA (3,4,9,10-perylene-tetracarboxylic-dianhydride) nanostrutures on Au(1 1 1)-() covered with NaCl islands has been studied using scanning tunneling microscopy (STM). Atomically resolved STM images show that NaCl grows as (1 0 0)-terminated layers on Au(1 1 1)-(). Local atomic hexagonal packing has also been observed in the NaCl(1 0 0) layer. At submonolayer NaCl coverage, PTCDA forms two-dimensional islands on the Au(1 1 1) surface and nucleate preferentially at the NaCl island step edges. When the Au surface is fully covered with NaCl layers, PTCDA molecules form three-dimensional molecular clusters decorating the step edges of NaCl layers.     

One-dimensional defects in iodine adlayers on Pt(1 0 0)

One-dimensional defect structures of closed-packed adlayers of iodine on Pt(1 0 0) were studied with scanning tunneling microscopy (STM). On the terraces of the Pt(1 0 0) surface we observed rotational domains with line defects running in [0 1 0] directions, in coexistence with nearly defect-free domains. In addition to these prevailing line defects (A-defects) with a local coverage lower than that of a defect-free surface, we report on much less frequently observed line defects with higher local coverages (B- and C-defects). The strong dependence of the concentration of these defects on the adsorption temperature is governed by the decrease of the overall iodine coverage with increasing temperature. Iodine adsorption at ∼1100 K leads to self-organization of A-defects in quasi-periodic arrangements. The relevance of these defects as important structural elements of commensurate superstructures of iodine on Pt(1 0 0) is stressed.     

ARPES measurements on Si(1 1 1) hole subband induced by Pb and Ga adsorption

The subband dispersions in the Si(1 1 1) p-type inversion layers induced by Pb and Ga adsorbed surface structures were measured by angle-resolved photoemission spectroscopy (ARPES). The surface structures used here were and Si(1 1 1)6.3 × 6.3-Ga. is a new surface phase found in this study. Because it is significant in our study to investigate potential effects of surface superstructures on the hole subband dispersion, we investigated the subband energy levels quantitatively comparing them with those calculated using the triangular approximation. It was found that the energy separation of the adjacent subband quantum levels in the inversion layers induced by gallium adsorption does not follow the triangular approximation. The possible band bending shape was proposed to explain the quantum level spacing of the subbands in Ga-induced inversion layers.     

Electronic structure of (0 0 1) AlN/GaN quantum wells by means of a spsd empirical tight-binding Hamiltonian

We have studied the electronic band structure of (0 0 1) AlN/GaN quantum wells by means of a sp³s^∗d⁵ empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have analyzed quantum wells with a thickness in the range 2 ? n ? 50, n being the number of principal layers of GaN in the well region. Results are presented for the point and the direction of the 2D Brillouin zone. The orbital character and the spatial localization of the different states have been also studied.     

Anisotropic defect reduction in non-polar a-plane GaN grown by hydride vapor phase epitaxy on maskless patterned templates

Several non-polar a-plane GaN films had been grown by hydride vapor phase epitaxy (HVPE) on different designed metal organic chemical deposition (MOCVD) GaN templates, which exhibited various ridge-like sidewall facets surface morphologies. The templates induced a lateral growth at the early stage of the HVPE growth, and resulted in a kind of maskless epitaxy lateral overgrown (ELO) process. It is found that the dislocation reduced differently along [1 0 0 0] and [] directions in these HVPE a-plane GaN layers. In [0 0 0 1] direction, the dislocation reduction resulted from the optimal surface roughness value of the template. In [] direction, the inclined facet might be a main factor for the dislocation reduction in HVPE-GaN films. The maskless ELO process had a significant influence on decreasing the dislocation density.     

Phase discrimination of iron-silicides on Si(0 0 1) surfaces by three-dimensional reciprocal-lattice mapping

Various iron-silicides are grown on clean Si(0 0 1) surfaces by solid phase epitaxy, a process which involves the deposition of iron and subsequent annealing [6]. Among them, we studied the structure of three-dimensional (3D) elongated islands, which are the major silicide type produced at lower Fe coverage (∼1 monolayer) and ?500-600 °C annealing. We applied a newly developed method of azimuth-scan reflection high-energy electron diffraction (RHEED) to obtain 3D reciprocal-lattice mapping. We succeeded in discriminating an α-FeSi₂ phase from controversial bulk phases of the islands, and we were also able to determine the orientation relation as and , where the lattice mismatches are −1% in direction and +34% in direction. The attenuation of the incident electron beam along the length direction of the islands leads to extremely weak spots in the RHEED pattern. We emphasize that such an analysis of the reciprocal-lattice mapping is also useful in studying other 3D island structures. Using scanning tunneling microscopy, we showed that the island’s elongated directions are perpendicular to the dimer rows of the substrate located under the islands. The islands are located near the S_B step edges. The elongation lengths of the islands are almost the same as the widths of the Si substrate terraces. We discussed the formation mechanism of the 3D-elongated islands. From an atomic image of the facet and edge of a 3D-elongated island, we proposed an atomic-structure model of the island facet and edge: a Si adatom on the hollow site of four Si atoms of an unit, with ordering in the direction of the elongation, forming an facet locally.     

Modelling of phase transitions and reaction at CO adsorption on oxygen precovered Pd(1 1 1)

Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO₂ reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)_O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)_O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.     

Generalized-stacking-fault energy and surface properties for HCP metals: A first-principles study

We present first-principles calculations on the generalized-stacking-fault (GSF) energies and surface properties for several HCP metals on Mg, Be, Ti, Zn, and Zr, employing density functional theory (DFT) within generalized-gradient-approximation (GGA) and spin-polarized GGA (SGGA) using the Vienna ab initio simulation package (VASP). Using a supercell approach, stacking fault energies for the [1 1  0] and [1 0  0] slip systems, and surface properties on basal plane (0 0 0 1) have been determined. Our results show that GSF energy is sensitive to the primitive cell volumes and the ratio c/a for HCP metals. A spin-polarized calculations should be considered for transition-metal Ti, Zn, and Zr. The results for Mg from this work are good with ones from the previous ab initio and the experiments.     

GaN/LiNbO3 (0 0 0 1) interface formation calculated from first-principles

The stable adsorption sites for both Ga and N ions on the ideal and on the reconstructed LiNbO₃ (0 0 0 1) surface are determined by means of first-principle total energy calculations. A single N layer is found to be more strongly bound to the substrate than a single Ga layer. The adsorption of a GaN monolayer on the polar substrate within different orientations is then modeled. On the basis of our results, we propose a microscopic model for the GaN/LiNbO₃ interface. The GaN and LiNbO₃ (0 0 0 1) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [1 0 0]_GaN‖ [1 1  0]_LiNbO3. In this way the (0 0 0 1) plane lattice mismatch between GaN and LiNbO₃ is minimal and equal to 6.9% of the GaN lattice constant. The adsorbed GaN and the underlying LiNbO₃ substrate have parallel c-axes.     

Sufficient and necessary condition of separability for generalized Werner states

In a celebrated paper [Optics Communications 179, 447, 2000], A.O. Pittenger and M.H. Rubin presented for the first time a sufficient and necessary condition of separability for the generalized Werner states. Inspired by their ideas, we generalized their method to a more general case. We obtain a sufficient and necessary condition for the separability of a specific class of N d-dimensional system (qudits) states, namely special generalized Werner state (SGWS): , where is an entangled pure state of N qudits system and α_i satisfies two restrictions: (i) ; (ii) Matrix , where , is a density matrix. Our condition gives quite a simple and efficiently computable way to judge whether a given SGWS is separable or not and previously known separable conditions are shown to be special cases of our approach.     

Possible coexistence of superconductivity and magnetism in intermetallic NiBi3

NiBi₃ polycrystals were synthesized via a solid state method. X-ray diffraction analysis shows that the main phase present in the sample corresponds to NiBi₃ in a weight fraction of 96.82 % according to the refinement of the crystalline structure. SEM - EDS and XPS analysis reveal a homogeneous composition of NiBi₃, without Ni traces. The powder superconducting samples were studied by performing magnetic measurements. The superconducting transition temperature and critical magnetic fields were determined as , Oe and Oe. The superconducting parameters were , , and κ=5.136. Isothermal measurements below the transition temperature show an anomalous behavior. Above the superconducting transition the compound presents ferromagnetic characteristics up to 750 K, well above the Ni Curie temperature.