The effect of enhanced luminescence on the generating characteristics of solid lasers

The effect of enhanced luminescence in polished rods on the generation threshold and power as determined by rod length, on reflectances of the external mirrors, and on the interior loss factor is investigated. It is shown that increasing the length of the rod can cut off generation, and that the threshold with ordinary rod lengths is several times higher than that computed without allowance for enhanced luminescence. Sample calculations are carried out for ruby and neodymium glass rods.We are grateful to B.I. Stepanov for his interest and useful comments on the present study.     

Electronic transitions in mobility gap in glassy semiconductors

Electronic transitions in mobility gap in glassy semiconductors are considered. Energies characteristics of the transitions, including de-trapping and luminescence energies, are in a simple way related to both the gap width and each other. Basic types of luminescence centres and some types of radiationless centres, including centres of photo-structural changes, are revealed. Correlations of the luminescence and its fatigue with some other photoinduced transitions are discussed. Some features of the luminescence are presented, including those associated with the inverse- Arrhenius law.     

一维NaYF4∶Er/Yb微米棒中上转换荧光的输运特性

稀土掺杂上转换(upconversion,UC)发光材料是一种把两个或多个长波长、低能量的近红外光子转换成一个短波长、高能量的可见或紫外光子的发光材料。由于其锐线发射、长寿命和无背底荧光等特性,在生物成像、检测与治疗、太阳能电池、药物输送和光催化等诸多领域具有极大的应用价值。目前,NaYF4∶Yb^3+/Er^3+微/纳晶体是公认的最重要的上转换发光材料之一,其相关的上转换发光机理、制备方法、光谱调制以及实际应用方面均已被科学家们进行了大量的研究。然而,荧光效率低这一严重问题一直制约着上转换发光材料实际应用的进程。另外,关于单颗粒上转换NaYF4∶Yb^3+/Er^3+微/纳晶体中荧光的产生、输运和耦合特性还不清楚。一维微/纳材料作为一种二维受限体系,为研究电子和光子的输运特性提供了一个理想模型。通过柠檬酸钠辅助的水热法合成了长径比可控的一维NaYF4∶Yb^3+/Er^3+微米棒和一维NaYF4∶Yb^3+/Er^3+@NaYF4∶Yb^3+/Tm^3+核-壳棒结构。采用激光共聚焦激发系统,在单颗粒一维NaYF4∶Yb^3+/Er^3+微米棒中,通过控制棒的长径比、激发方式和制备特殊的核-壳结构等方式,研究了荧光的产生和同步荧光图案,揭示了在一维棒结构中荧光光线的输运模式为:垂直于棒轴方向的荧光沿棒横截面的戒指形谐振腔趋肤传播和近似沿棒轴方向的荧光在棒介质中反复全反射以波导方式输运至棒端后靶向输出;在NaYF4∶Yb^3+/Er^3+@NaYF4∶Yb^3+/Tm^3+核-壳一维棒结构中,在单一波长激发下,获得了源自单颗粒的Tm^3+的蓝色和Er^3+绿色特征发射。采用点激发方式激发一维核-壳微米棒样品一端时,呈强烈蓝色荧光空间不对称的哑铃状分布,且中间出现了微弱绿色荧光,构筑出单颗粒单一波长激发下的局域色彩调制发射,并为微量稀土发光中心局域掺杂的检测提供了一种途径。在波导激发和点激发方式下,在对单颗粒一维NaYF4∶Yb^3+/Er^3+和NaYF4∶Yb^3+/Er^3+@NaYF4∶Yb^3+/Tm^3+核-壳微米棒的荧光产生和输运的调制中,实现了对离子荧光发射颜色的控制,并揭示了荧光在一维棒中传输耦合过程中,沿棒长模式荧光比沿径向模式荧光更容易传输耦合。该研究的一维棒荧光的输运和耦合特性,暗示了其在光子耦合器件、上转换波导激光以及荧光成像方面的潜在应用。     

Nonlinear photoluminescence from van Hove singularities in multiwalled carbon nanotubes

Van Hove singularities (VHS) in the density of states of multiwalled carbon nanotubes (MWNTs) have been observed by optical spectroscopy for the first time to the authors' knowledge. Additionally, unexpected visible luminescence has been observed on photoexcitation at 1064 nm. This luminescence is believed to arise from radiative transitions between energy states in the VHS. A mechanism describing the underlying processes, which involve multiphoton absorption followed by upconverted luminescence from VHS energy states, is presented. Our results show that the presence of VHS readily facilitates efficient optical transitions in     

Ho(0.5)Yb(5)氟氧化物玻璃的直接上转换增敏发光

本文研究了HoYb共掺氟氧化物玻璃的直接上转换增敏发光现象。发现了位于 (5 4 4 5nm ,1836 5cm- 1 )和 (6 5 8 5nm ,15 186cm- 1 )的两条很强的上转换发光 ,它们是 5S2 → 5I8和5F5→ 5I8的荧光跃迁。还有其他的一些上转换发光5F3→ 5I8,5S2 → 5I7和5I4 → 5I8的跃迁。还发现存在一种特征的饱和现象 ,即所有上转换发光随激光功率变化的F P双对数关系曲线都是一条相当好的直线 ,其斜率会随着光斑的增大而增大 ,由分析得知这是由能量扩能散造成的。     

氟氧化物玻璃陶瓷中铒激活中心的双光子三光子与四光子近红外量子剪裁发光

研究了掺铒的氟氧化物玻璃陶瓷的双光子、三光子与四光子近红外量子剪裁发光.我们测量了掺铒的氟氧化物玻璃陶瓷的X 射线衍射谱、吸收谱、从可见到近红外的发光光谱与激发光谱.当Er3+浓度从0.5％增加到2.0％,发现铒离子的4I15/2→2G7/2,4I15/2→4G9/2,4I15/2→4G11/2,4I15/2→2H9/2,4I15/2→(4F3/2,4F5/2),4I15/2→4F7/2,4I15/2→2H11/2,4I15/2→4S3/2,4I15/2→4F9/2,与4I15/2→4I9/2红外激发谱峰的强度增加了大约5.64,4.26,2.77,7.31,6.76,4.75,2.40,11.14,2.88,和4.61倍,同时,铒离子的4I15/2→2G7/2,4I15/2→4G9/2,4I15/2→4G11/2,4I15/2→2H9/2,4I15/2→(4F3/2,4F5/2),与4I15/2→4F7/2的可见激发谱峰的强度减小了1.36,1.93,3.43,1.01,2.24和2.28倍.也就是说我们发现红外发光与激发的强度都增强了2～11倍,与此相伴的可见的发光与激发强度都减小了一到三倍.而且,1 543.0与550.0 nm发光的激发谱不仅在峰值波长而且也在波峰形状上非常相近.上述实验结果证实了所看到的现象为多光子近红外量子剪裁发光现象.为了更好的分析量子剪裁的过程与机理,还测量了主要的可见与红外发光强度随激发强度的改变;发现所有可见和红外发光强度都基本上是随激发强度成线性变化关系;其中,可见的发光强度随激发强度的改变呈略大于线形一次幂的变化关系,它是由于小的激发态吸收造成的;而1 543.0 nm红外发光强度随激发强度的变化呈略小于线形一次幂的变化关系,它即是量子剪裁发光的特征现象.还发现4I9/2能级的双光子量子剪裁主要由{4I9/2→4I13/2,4I15/2→4I13/2} ETr31-ETa01交叉能量传递所导致;4S3/2能级的三光子量子剪裁主要由{4S3/2→4I9/2,4I15/2→4I13/2} ETr53-ETa01和{4I9/2→4I13/2,4I15/2→4I13/2} ETr31-ETa01交叉能量传递所导致;2H9/2能级的四光子量子剪裁主要由{2H9/2→4I13/2,4I15/2→4S3/2} ETr91-ETa05,{4S3/2→4I9/2,4I15/2→4I13/2} ETr53-ETa01和{4I9/2→4I13/2,4I15/2→4I13/2} ETr31-ETa01交叉能量传递所导致.上述研究结果对目前的全球热点新一代量子剪裁太阳能电池很有价值.     

Intracenter transitions of iron-group ions in II–VI semiconductor matrices

A review is made of studies of intracenter optical transitions in 3d shells of iron-group divalent (magnetic) ions. Attention is focused on the emission spectra of Mn²⁺ ions in CdTe, ZnS, and ZnSe crystals. An analysis is made of the structure of intracenter absorption and luminescence and of the effect that the elemental matrix composition, magnetic-ion concentration, temperature, hydrostatic pressure, and structural phase transitions exert on the intracenter transitions. The mutual influence of two electronic excitation relaxation mechanisms, interband and intracenter, is considered. The specific features of the intracenter emission of magnetic ions embedded in two-dimensional systems and nanocrystals associated with a variation in sp-d exchange interaction and other factors are discussed. Data on the decay kinetics over the intracenter luminescence band profile are presented as a function of temperature, magnetic ion concentration, and excitation conditions. The saturation of the luminescence and the variation of its kinetic properties under strong optical excitation, which are caused by excitation migration and the cooperative effect, as well as the manifestation of a nonlinearity in intracenter absorption, are studied.     

Er3+单掺,Er3+/Yb3+共掺杂氟化物中红绿上转换荧光机理实验探索

制备了稀土离子Er^3＋单掺,Er^3＋-Yb^3＋共掺杂氟化物样品。在980nm波长激光激发下,室温时观察到了清晰可见的红（650nm）绿（545nm）上转换荧光,它们分别对应^4S3/2,^2H11/2-^4I15/2和^4F9／2-^4I15/2的发射。同时发现红绿上转换荧光的比值随Er^3＋的浓度增加而减少（对共掺而言）。上换荧光强度与激发光强度的关系表明红绿上转换荧光都是双光子上转换过程,在此基础上,根据能量匹配的原理,讨论了红绿上转换荧光的可能实现机制。     

Protoluminescence study of ultra-high vacuum cleaved germanium

We have studied the photoluminescence of Ge samples cleaved in ultra-high vacuum to better understand the role of intrinsic surface states in radiative and non-radiative recombination. We find that the surface states associated with the as-cleaved surface (2 × 1 reconstructed 〈111〉) are very efficient in quenching the band-to-band recombination at T ～ 90 K. The transitions through surface states are predominantly non-radiative. The adsorption of oxygen, up to a half monolayer, markedly reduces this quenching effect by removing the surface state bands. Some preliminary experimental results on the question of radiative transitions involving the surface states is presented. No luminescence unambiguously attributable to surface state transitions is observed for wavelengths shorter than 5 μm.     

Loss coefficient for amplified luminescence of laser diode arrays

A system of radiative transfer equations is used to calculate the loss coefficient for amplified luminescence fluxes propagating along and transverse to the cavity axis in the active layer of high-power laser diode arrays taking the spreading of charge carriers in the cladding and contact layers of InGaAs/GaAs/AlGaAs heterostructures into account. It is shown that the spreading of charge carriers leads to a significant change in the amplified luminescence flux which can contribute up to 18% to the lasing threshold of these laser diode arrays. The calculated loss coefficients can greatly simplify the determination of the amplified luminescence fluxes in laser diode arrays with an error of less that 16% and can be used to determine how much the amplified luminescence affects the power and dynamic characteristics of diode arrays.     

Vector classification, doublet splitting of exciton and biexciton subbands in crystals, and selection rules for transitions between them

The analysis of experimental data on absorption, reflection, luminescence in the region of exciton and biexciton phototransitions in CdS, including P-band structure, shows that there is doubled, contrary to known theory, number of free exciton and biexciton states. This discreapancy is removed in the vector model of these states presented in this paper. The selection rules for transitions between exciton (biexciton) states in crystals taking into consideration their L-T splitting are obtained. The spectra of stimulated FIR radiation on excitonic transitions in CdS, previously obtained experimentally, well fit to these selection rules.     

Er^3＋／Yb^3＋共掺杂ZnO粉末的上转换发光特性

采用高温氧化法制备了Er3 /Yb3 共掺杂ZnO粉。通过X射线衍射和扫描电镜对其进行了成分和组织结构分析,发现样品主要由ZnO和YbF3组成。在ZnO中测量到少量Er3 和Yb3 ,而YbF3中无Er3 ,故发光主要是由ZnO产生的。在980nm半导体激光器的激发下,观察到由处于激发态能级4F9/2,4S3/2,2H11/2和2H9/2的Er3 离子向基态4I15/2跃迁时发出的波长依次为658,538,522和409nm的上转换发光。在488nmAr 激光器的激发下,观察到了较强的409nm的紫光,466和450nm的弱蓝光以及379nm的紫外光,分别对应于Er3 离子的2H9/2→4I15/2,2P3/2→4I11/2,4F3/2/4F5/2→4I15/2,4G11/2→4I15/2等跃迁。上转换发光强度随激发功率的变化关系表明,488nm激发下紫色上转换荧光为双光子过程,主要是通过Er3 /Yb3 离子间正向和反向的能量传递来实现的。     

Irreducible representations of subperiodic rod groups

A procedure for taking the irreducible representations of subperiodic rod groups from tables of irreducible representations of three-periodical space groups is derived. Examples demonstrating the use of this procedure and derivation of selection rules for direct and phonon assisted electrical dipole transitions are presented. The text was submitted by the authors in English.     

Strong upconversion luminescence in Er~(3+)/Yb~(3+)-doped halide modified tellurite glass

Upconversion luminescence of Er3+/Yb3+-doped halide tellurite glass is investigated experimentally upon 976-nm excitation. Three intense emissions centered at 525, 545 and 655 nm owing to the transitions 2H11/2→4I15/2,4S3/2→4I15/2 and 4F9/2→4I15/2, respectively, are observed when pumping power is as low as 20 mW. The upconversion mechanisms and power dependent intensities are discussed. The high-populated 4I11/2 level is supposed to serve as the intermediate state responsible for the upconversion processes.     

Spectroscopic studies of real space indirect symmetric GaAs/AlAs short period superlattices

The band structure and the optical transitions of symmetric ultra-short period (GaAs) _m /(AlAs) _n superlattices (n=m is the number of monolayers) have been studied using different spectroscopic techniques, namely photoacoustic spectroscopy, reflectivity and luminescence, photoluminescence excitation and high excitation intensity time-resolved luminescence. Direct observation of the transition from type I to type II energy band alignment is reported for superlattices whose configuration consists of more than 12 monolayers (i.e. m=n>12). The radiative recombination processes associated with the real space indirect transitions have been investigated as a function of the density of photogenerated electron-hole pairs, revealing an unusual density-dependent behaviour. A tentative interpretation in terms of a condensed electron-hole state at the indirect gap is given, which accounts for the long decay time of the type II luminescence at high excitation rate.     

Procedure for interpreting the luminescence lines caused by ordinary and cross-relaxation transitions

A procedure using a spectrometer with a CCD detector for interpreting the luminescence lines caused by ordinary and cross-relaxation transitions is presented for LaF₃ crystal activated by Pr³⁺ ions as example.     

Monte Carlo simulations of luminescence processes under quasi-equilibrium (QE) conditions

Previous researchers have carried out Monte Carlo simulations of thermoluminescence (TL) phenomena by considering the allowed transitions of charge carriers between the conduction band, electron traps and recombination centers. Such simulations have demonstrated successfully the effect of trap clustering on the kinetics of charge carriers in a solid, and showed that trap clustering can significantly change the observed luminescence properties. While such Monte Carlo simulations have been carried out for TL, there has been no such trap clustering studies for optically stimulated luminescence phenomena (OSL). This paper presents a simplified method of carrying out Monte Carlo simulations for TL and linearly modulated optically stimulated luminescence (LM-OSL) phenomena, based on the General One Trap (GOT) model, which is a special case of the one trap one recombination center model (OTOR) when quasi-equilibrium conditions (QE) hold. The simulated results show that the presence of small clusters consisting of a few traps in a solid can lead to multiple peaks in both the TL and LM-OSL signals. The effects of retrapping and degree of trap filling are simulated for such multi-peak luminescence signals, and insight is obtained into the mechanism producing these peaks. The method presented in this paper can be easily generalized for other types of luminescence solids in which the recombination probability varies with time.     

氧化钇（铒,镱）的合成及上转换发光

采用均相沉淀,马弗炉煅烧的方法,合成了一系列Y2O3∶Er3＋,Yb3＋上转换发光材料.该类材料在波长为980 nm半导体激光器激发下发射出中心波长为564nm的绿色和662nm的红色上转换荧光,分别对应于Er3＋离子的4S3/2/2H11/2→4I15/2和4F9/2→4I15/2跃迁.探讨了不同合成条件对其上转换发光强度和波长的影响,发现沉淀时的pH值,煅烧温度和沉淀中Er3＋、Yb3＋的相对浓度对其发光有显著影响.     

New high-energy luminescence bands from Co2+ in ZnSe

Three sharp absorption features in the energy range 2.36–2.55 eV have been detected in the transmission spectrum of Co-diffused ZnSe, and a number of luminescence transitions originating from the lowest of these states at 2.361 eV have been observed. Photoluminescence excitation spectra prove that these are high energy excited states of the Co²⁺_Zn impurity, a conclusion confirmed by comparison of measured and predicted luminescence energies. This represents the first identification of luminescence branching from a higher excited state of a transition metal ion in any semiconductor. The sharp, weakly phonon-coupled transitions involve either intra-impurity excitation or transitions from the impurity to localised states split off from a minimum in the conduction band. The implications of these observations for the mechanism of host-impurity energy transfer and for the nature of the excited state wavefunctions are discussed.     

Optical properties of excitons bound to neutral SiGa-donors in GaP and the degeneracy of the SiGa-donor ground state

Low temperature near band-edge absorption and luminescence spectra of Si-doped n-type GaP are reported. Electrical and optical evidence is presented that these spectra are due to the creation and decay of excitons bound to neutral Si donors on Ga sites. Several zero-phonon transitions, each with strong replications by momentum conserving phonons, were observed in both absorption and luminescence. From these measurements it is concluded that the ground state of the Si_Ga donor is split into two sublevels 0.6 meV apart. Crystals containing a sufficiently low concentration of S to be suitable for a reliable analysis of temperature-dependent Hall-effect measurements were selected by combining 300°K Hall-effect data with low temperature S-exciton absorption data. The electrical measurements support the identification of Si as the main shallow donor. Moreover, it is concluded from these measurements that the degeneracy of the ground state of a Ga-site donor is 3 times that of a P-site donor, in agreement with theoretical expectations.