基于PPMgLn晶体全固态宽带可调光学参量振荡器

基于掺MgO周期极化铌酸锂晶体的光学参量振荡器是一种全固态中红外可调谐相干光源.泵浦源为1064 nm声光调Q Nd:YAG激光器.通过温度调谐实现了中红外可调谐参量光的输出,当晶体的温度从40°C升高到200°C时,获得信号光的输出范围为1.561 μm～1.670μm,空闲光的调谐范围为3.342 μm～2.932 μm.当泵浦源脉宽为70 ns,重复频率为10 kHz,平均功率为.161 W,获得波长为1631μm.当泵浦源脉宽为70 ns,重复频率为10 kHz,平均功率为1.61 W,获得波长为1631 nm信号光的输出功率为21 1 mW.     

1.8 μm optical parametric oscillator based on KTiOPO4

A 1.8 ??m optical parametric oscillator pumped by a diode end-pumped acousto-optically Q-switched Nd:YAG is demonstrated. A 30-mm-long KTiOPO₄ crystal cut with an angle of ?? = 59.4°, ?? = 0° is employed as the OPO crystal. 685 mW signal laser at 1.8 ??m is obtained at the diode pump power of 13 W and the pulse repetition rate of 25 kHz. Simultaneously, 265 mW idler emission at 2.6 ??m is obtained. The corresponded diode-to-OPO conversion efficiency is 7.3%. The pulse width of the signal and idler wave are measured to be 4.5 and 2.5 ns, respectively. This gives a peak power of 6.1 and 4.2 kW, respectively.     

Mid-infrared,wide-tunable,continuous-wave Nd:YVO4/PPMgLN intracavity optical parametric oscillator

We obtain a continuous-wave (CW) Nd:YVO₄/PPMgLN intracavity singly resonant optical parametric oscillator (ISRO). The threshold value of the CW-ISRO system is only 2.8 W at 808 nm. When the pump power is 5.5 W, an idle laser output power of 410 mW, and a signal laser output power of 345 mW have been achieved. By changing the grating periods of the domain structure on the PPMgLN wafer, we enable a wide-tunable mid-infrared spectrum of 2.95–4.16 μm and near-infrared spectrum of 1.43–1.66 μm.     

A 100 kHz Narrow-Pulse-Width Mid-Infrared Optical Parametric Oscillator Based on PPMgLN Crystal

We report a narrow pulse width optical parametric oscillator based on periodically poled MgO:LiNbO₃ (PPMgLN) with a high repetition rate under quasi-phase matched conditions. When the maximum pumping power of the 1,064-nm laser was 14.57 W, the acousto-optical (A-O) Q-switch repetition rate was 100 kHz, and the PPMgLN crystal grating period was 29.5 μm. A 1,474-nm signal light output power of 4.21 W and a 3,828 nm idler light output power of 1.547 W were obtained, corresponding to a pulse width of 9.52 ns and 9.65 ns, respectively. The overall optical–optical conversion efficiency was 39.5%. Additionally, by changing the temperature from 25°C to 150°C, a tunable signal wavelength of 1,474–1,499 nm and idler wavelength at 3,676–3,828 nm of the output laser were achieved.     

外腔式宽调谐被动调QNd:YVO_4/PPMgLN光学参量振荡器

报道了一个低阈值宽调谐、被动调Q、单谐振掺MgO的周期性极化铌酸锂晶体(PPMgLN)光学参量振荡器。利用被动调Q的Nd:YVO4激光器作为泵浦源,采用外腔结构,在室温下,实现了PPMgLN晶体的准相位匹配光学参量振荡。光参量振荡的阈值仅为0.27W(单脉冲能量4.5μJ、脉宽35ns);在泵浦光为1.35W(脉冲能量8.2μJ、脉宽35ns),PPMgLN周期为31μm时,获得了161.9mW,3.202μm脉冲激光输出;同时获得了98.5mW的1.594μm信号光输出,总的光光转化效率达到19.3%。通过改变晶体的周期,实现了闲频光3.13～4.19μm,信号光1.43～1.65μm的宽带可调谐激光输出。     

Optical parametric oscillator pumped by relaxation oscillation pulses of a mechanically Q-switched Nd:YAG laser

We report the generation of mid-infrared pulsed radiation between 2.2 and 3 μm range using a singly-resonant optical parametric oscillator (SR-OPO) based on a 40-mm-long crystal of periodically-poled LiNbO₃ (PPLN) pumped by mechanically Q-switched pulses from a Nd:YAG laser, obtained by chopping the beam inside the laser resonator over a 1–10 kHz duty cycle. An appreciable reduction in pulse width as well as the number of relaxation oscillation pulses of the Nd:YAG pump laser is observed when the frequency of the Q-switch chopper is increased up to 10 kHz. Sub-nanosecond relaxation oscillation pulses of about 170–210 ns duration are generated under the width of the idler envelope varying from 4.6 to 8.55 μs. The same behavior is observed for the signal wave. A maximum extraction efficiency of 22 % is obtained for the idler, corresponding to 785 mW of output power at 10 kHz. The tuning of the signal and idler beams were performed by temperature variation of the PPLN crystal within 100–200 °C range.     

Study on broadly tunable optical parametric oscillator based on MgO-doped periodically poled LiNbO3 crystal

An efficient source of all-solid-state broadly tunable mid-infrared optical parametric oscillator based on a periodically poled MgO-doped lithium niobate is reported. The pump source is a 1064nm acousto-optically Q-switched diode-pumped Nd:YAG laser. A broadly tunable mid-infrared output from 1.56 to 1.67 μm were generated, with corresponding idler wavelengths of 3.34 to 2.93 μm by temperature tuning from 40 to 200°C. When the average pump power is 1.61 W with about 70 ns pulse duration operating at a repetition rate of 10 kHz, the maximum signal output power of the PPMgLN-OPO is about 211 mW at 1631 nm.     

A 9.5-W 82-MHz-repetition-rate picosecond optical parametric generator with cw diode laser injection seeding

We report on an injection-seeded 9.5-W 82-MHz-repetition-rate picosecond optical parametric generator (OPG) based on a 55 mm long crystal of periodically poled lithium niobate (PPLN) with a quasi-phase-matching (QPM) grating period of 29.75 μm. The OPG is excited by a continuously diode pumped mode-locked picosecond Nd:YVO₄ oscillator-amplifier system. The laser system generates 7 ps pulses with a repetition rate of 82.3 MHz and an average power of 24 W. Without injection-seeding the total average output power of the OPG is 8.9 W, which corresponds to an internal conversion efficiency of 50%. The wavelengths of the signal and idler waves were tuned in the range 1.57–1.64 μm and 3.03–3.3 μm, respectively, by changing the crystal temperature from 150 °C to 250 °C. Injection seeding of the OPG at 1.58 μm with 4 mW of single frequency continuous-wave radiation of a distributed-feedback (DFB) diode laser increases the OPG output to 9.5 W (53% conversion efficiency). The injection seeding increases the pulse duration and reduces the spectral bandwidth. When pumped by 10 W of 1.06 μm laser radiation, the duration of the signal pulses increased from 3.6 ps to 5.5 ps while the spectral bandwidth is reduced from 4.5 nm to 0.85 nm. Seeding thus improved the time-bandwidth product from 1.98 to a value of 0.56, much closer to the Fourier limit. Received: 29 April 2002 / Published online: 8 August 2002     

All fiber MOPA laser-pumped,continuous-wave,mid-infrared,singly-resonant optical parametric oscillator based on periodically poled MgO-Doped LiNbO<Subscript>3</Subscript>

We report a continuous-wave (CW) mid-infrared singly resonant optical parametric oscillator (SRO) based on periodically poled MgO-doped LiNbO₃ (PPMgLN) pumped by a high power, single frequency fiber laser in master oscillator-power amplifier (MOPA) configuration at 1.064 μm. Using four-mirror ring OPO cavities, at the PPMgLN’s grating period of 30.5 μm and the temperature of 23°C, we achieved the maximum idler output power of 7.2 W at 3.4 μm when the pump power was 52.8 W. The total power-conversion efficiency from the pump to the idler in this experiment is about 13.6%, and corresponds to ∼44% of quantum-limited performance.     

Long wavelength strain-engineered InAs multi-layer stacks quantum dots laser diode on GaAs substrate

The growth of GaAs based 1.5 ??m multi-layer stacked InAs quantum dots (QDs) has been investigated by solid-source molecular beam epitaxy (SSMBE), which was very important devices for transmission window. Owing to a strong electronic coupling between the QDs layers and the quantum wells (QWs), and antimony (Sb) introduced by for long-wavelength semiconductor lasers were obtained. The device structure for QDs laser diodes (LDs) with a cavity length of 1000 ??m and stripe width of 100 ??m as well as the device fabrication results will also be presented. The output performance was achieved with continuous wave (CW) operation, the measurement were from 20 to 60°C with a temperature step of 10°C. The threshold current density was 168 A/cm², and the CW operating up to 20 mW at room temperature (RT) was achieved.     

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm². Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22–40) mA and (0.2–0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90°C under power of 5 mW. After operating under 90°C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25°C and the operation currents at 5 mW (at 25°C) are (2–3) mA and (3–5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50°C and 2.5 mW. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998.     

12 W mid-infrared output,singly resonant,continuous-wave optical parametric oscillator pumped by a Yb<Superscript>3+</Superscript>-doped fiber amplifier

We report a continuous-wave singly resonant optical parametric oscillator (SRO) with more than 12 W of idler power at 3414 nm when it was operated at 30°C. The SRO was directly pumped by a single-frequency, ytterbium-doped fiber laser with 49 W linear polarization pump powers, and based on 50 mm long periodically poled MgO:LiNbO₃ crystal (PPMgLN) in two-mirror linear cavity with 30.5 μm grating period. It’s pump power at threshold was 5.4 W. The slope-efficiency and quantum-limited performance reached 26 and 79.2%, respectively. The beam polarization matched the e → e + e interaction in crystal. The idler waves were temperature tuned in the range of 3654 to 3811 nm and 3248 to 3414 nm based on two 50 mm long PPMgLN with 29.5 and 30.5 μm grating period. To the best of our knowledge, this is the highest continuouswave mid-IR output obtained for a fiber laser pumped optical parametric oscillator (OPO).     

Multiple quantum well structures and high-power lasers of gaas- algaas grown by metalorganic vapor phase epitaxy (MOVPE)1

GaAs/AlGaAs GRIN-SCH type multiple quantum well lasers with four wells of 11 nm GaAs, grown in an MOVPE chimney reactor, exhibit an output power as high as 110 mW/facet (CW, 30°C; 5 μm stripe) and 1.3 W/facet (pulsed, 30°C; 53 μm stripe) until catastrophic optical damage occurs. 2000 hours life tests conducted at 60°C and 15 mW CW show no noticeable degradation for the 5 μm stripe laser with a reflective coating on both facets. Raman spectroscopy on similar multiple quantum well structures with 65 GaAs wells is used to ascertain that the wells have minimum residual aluminum- content.     

Temperature-tuned difference-frequency mixing in periodically poled KTiOPO4

4 (PPKTP). We generated 12 μW of radiation tunable around 1.6 μm by difference-frequency mixing of the outputs of a frequency-doubled Nd:YLF laser at 523 nm (240 mW) and a tunable Ti:sapphire laser near 760 nm (340 mW). A temperature tuning rate of 0.73 nm/°C for the generated wavelength and a FWHM temperature acceptance bandwidth of 6.9 °C cm was observed. The effective d₃₃ coefficient was estimated to be ∼5 pm/V. Received: 02 September 1998     

Similarity of plasma conditions of some Ne-like X-ray lasers and their partner Ni-like X-ray lasers

New pump and signal laser sources for difference frequency generation (DFG) at 4 m are described. A laser diode with a 980 nm fiber Bragg grating and a 785 nm Fabry-Perot (FP) laser diode were coupled into an optical fiber and mixed in a periodically poled Mg-doped lithium niobate (PPMgLN ) crystal, resulting in efficient mid-IR DFG. The DFG power was measured to be 0.23 W for a pump power of 5 mW and a signal power of 50 mW with a slope efficiency of 0.92 mW/W². A Doppler-broadened absorption spectrum of N₂O at 2485.2 cm^-1 (3.927 m) was observed in a 0.1 m-long gas cell at a pressure of 133 Pa. The spectral linewidth of the DFG source was estimated to be 161 MHz (FWHM) for an averaging time of 700 ms. Real-time monitoring of N₂O in a multipass cell with an optical path length of 36 m at a concentration level of 1 ppm was demonstrated. PACS 42.62.Fi; 42.72.Ai; 07.57.Hm     

Fabrication and modulation characteristics of InGaAsP/InGaAsP MQW DCPBH lasers at λ ∼ 1.57 μm

InGaAsP/InGaAsP multiple-quantum-well (MQW) double-channel planar-buried heterostructure (DCPBH) lasers emitting at λ∼ 1.57 μm were fabricated by optimizing the epitaxial growth with material characterization. At 25 °C (85 °C), a 1.8-μm-wide and 300-μm-long antireflectivity/high reflectivity coated laser exhibits a threshold current of 8 mA (23 mA) and a slope efficiency of 0.34 mW/mA (0.24 mW/mA) in continuous-wave mode (cw) as a result of the optimized thickness of the p-InP filling layer in the PBH structure with p-n-p-n current blocking layers. The maximum cw output power was approximately 20 mW at 25 °C, which was reduced to 17 mW at 85 °C. The peak wavelength varied from 1572 nm at 25 °C to 1602 nm at 100 °C for a fixed output power of 5 mW, indicating a temperature coefficient of ∼ 0.4 nm/K. The resonance frequency in the small-signal modulation response of devices depends on the etching depth of the U-shaped double channel; it increases from 0.4 GHz without channel etching to 4.3 GHz with 7-μm-thick etching. The full-width at half maximum values in the horizontal and vertical far-field patterns were approximately 24.5° (25.2°) and 29.4° (30.1°), respectively, at 25 °C (85 °C). PACS 42.55.Px; 73.61.Ey; 81.05.Ea     

Mid-IR Dual-Wavelength Difference Frequency Generation Using Fiber Lasers as Pump and Signal Light Sources

A continuous-wave mid-IR difference frequency laser source, which respectively uses an ytterbium-doped fiber laser as the pump source and a multiwavelength erbium-doped fiber laser cascaded with an erbium-doped fiber amplifier as the signal source, is demonstrated. Our experimental results show that two stable mid-IR radiation lines with a spacing of about 5.4nm may be simultaneously emitted by a suitable setting the pump and signal polarization orientations. The number of the mid-IR radiation lines is limited by the quasi-phase-matching acceptance bandwidth. By changing the PPMgLN temperature the two mid-IR radiation lines may be synchronously tuned in the mid-IR range between 3295 and 3356.3nm.     

High average power 2 μm generation using an intracavity PPMgLN optical parametric oscillator

An intracavity quasi-phase-matched optical parametric oscillator (OPO) has been developed for the purpose of generating radiation with high average power and high repetition rate in the 2 μm regime. The device is a degenerate OPO based on a 3 mm thick MgO-doped periodically poled LiNbO(3) (PPMgLN) crystal, which is pumped in turn within the cavity by a diode side-pumped, Q-switched 1 μm Nd:YAG laser operating at 10 kHz. Up to 20 W broadband 2 μm radiation can be generated with a compact configuration under the crystal temperature of 115 °C. The beam profile is close to circularly symmetric with M(2) ~ 10.     

A compact,widely tunable intracavity PPLN optical parameter oscillator driven by an Nd:YAG/Cr:YAG composite crystal laser

Based on periodically poled lithium niobate (PPLN), a mini intracavity optical parameter oscillator (IOPO) driven by an diode-end-pumped composite Nd³⁺:YAG/Cr⁴⁺:YAG laser was demonstrated. The PPLN wafer has 20 domain reversal periods from 27.8 to 31.6 μm with a step of 0.2 μm between the neighbor periods. The output signal laser of OPO can be widely tunable in the range of 1402–1676 nm by changing the period at a certain temperature of 50°C. Under the diode pump power of 14 W, the maximum average output power of 600 mW at 1534 nm with pulse width of 2.0 ns and repetition rate of 16 kHz was obtained, corresponding to a peak power of 18.7 kW and a single pulse energy of 37.5 μJ, respectively.     

High-power mid-infrared tunable optical parametric oscillator based on 3-mm-thick PPMgCLN

The experimental results of a high-power tunable mid-IR laser are presented. The optical parametric oscillator (OPO) with a 3-mm-thick PPMgCLN crystal was pumped by a 1.064 μm pulse laser. When the pump power of the 1.064 μm laser was 151 W at 10 kHz, and the operating temperature of the PPMgCLN with 5% MgO doping was 100°C, average output power of 23.7 W at 3.91 μm was obtained with a slope efficiency of 18.2% for the idler resonant OPO. The variation of the 3.91 μm output power was about ±4% in 10 min continuous operation. The beam quality factor M ² was less than 2.6. The average output power of 27.4 W at 3.91 μm was also obtained with 151 W pump power and the slope efficiency of 20.9% for the signal resonant OPO by changing the coating parameters of the OPO cavity mirrors. The mid-IR wavelength tunability of 3.7–4.0 μm can be achieved by adjusting the temperature of a 29 μm period PPMgCLN crystal from 200 to 30°C.