Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth

It has been known that, in growing silicon from melts, vacancies (Vs) predominantly exist in crystals obtained by high-rate growth, while interstitial atoms (Is) predominantly exist in crystals obtained by low-rate growth. To reveal the cause, the temperature distributions in growing crystal surfaces were measured. From this result, it was presumed that the high-rate growth causes a small temperature gradient between the growth interface and the interior of the crystal; in contrast, the low-rate growth causes a large temperature gradient between the growth interface and the interior of the crystal. However, this presumption is opposite to the commonly-accepted notion in melt growth. In order to experimentally demonstrate that the low-rate growth increases the temperature gradient and consequently generates Is, crystals were filled with vacancies by the high-rate growth, and then the pulling was stopped as the extreme condition of the low-rate growth. Nevertheless, the crystals continued to grow spontaneously after the pulling was stopped. Hence, simultaneously with the pulling-stop, the temperature of the melts was increased to melt the spontaneously grown portions, so that the diameters were restored to sizes at the moment of pulling-stop. Then, the crystals were cooled as the cooling time elapsed, and the temperature gradient in the crystals was increased. By using X-ray topographs before and after oxygen precipitation in combination with a minority carrier lifetime distribution, a time-dependent change in the defect type distribution was successfully observed in a three-dimensional manner from the growth interface to the low-temperature portion where the cooling progressed. This result revealed that Vs are uniformly introduced in a grown crystal regardless of the pulling rate as long as the growth continues, and the Vs agglomerate as a void and remain in the crystal, unless recombined with Is. On the other hand, Is are generated only in a region where the temperature gradient is large by low-rate growth. In particular, the generation starts near the peripheral portion in the vicinity of the solid–liquid interface. First, the generated Is are recombined with Vs introduced into the growth interface, so that a recombination region is always formed which is regarded as substantially defect free. Excessively generated Is after the recombination agglomerate and form a dislocation loop region. Unlike conventional Voronkov's diffusion model, Is hardly diffuse over a long distance. Is are generated by re-heating after growth.[In a steady state, the crystal growth rate is synonymous with the pulling rate. Meanwhile, when an atypical operation is performed, the pulling rate is specifically used.]This review on point defects formation intends to contribute further silicon crystals development, because electronic devices are aimed to have finer structures, and there is a demand for more perfect crystals with controlled point defects.     

Comparison of Ba(B1-xAlx)2O4 Single Crystals on their Diameters

Small diameter crystals of Ba(B_1-xAl_x)₂O₄ were grown by Floating zone pulling down method and Micro-pulling down method to be compared with large diameter crystals grown by Czochralski method. While the Czochralski grown crystal was opaque, the crystal transparency was actually improved with the decrease of crystal diameter, i.e., the decrease of constitutional supercooling. The reason was the increase of temperature gradient caused by down-sizing of the crystal diameter deduced by down-sizing of the growth furnace. The adequate diameter for transparent crystal was determined depending on the Al content.     

On the Iso‐Diameter Growth of β ‐BaB2O4 (BBO) Crystals by Flux Pulling Method

The iso‐diameter growth of β ‐BaB₂O₄ (BBO) crystals by the flux pulling method have been studied based on the phase equilibrium diagram in the BaB₂O₄‐Na₂O pseudo‐binary system and from the interface stability. The mathematical expressions for the cooling rate in the growth of the crystals with constant diameter under stable growth conditions are derived, the experimental phenomena such as diameter contraction and difficulty to grow a lengthy crystal by the flux pulling method are explained, the prerequisite for iso‐diameter BBO crystal growth from the flux is suggested; a new continuous charging flux pulling method is introduced to grow large‐sized high quality crystals with a relative high growth rate.     

Growth of dysprosium garnet single crystals with spiral shape using Czochralski technique

The growth conditions of dysprosium garnets single crystals, to obtain a long and good spiral shape crystal, have been investigated using the conventional Czochralski technique along the [111] pulling direction. The good spiral shape of Dy₃Ga₅O₁₂ single crystal with 40 mm in length is grown with its spiral pitch and spiral diameter of 20 mm and 15 mm, respectively.     

Evaporation induced diameter control in fiber crystal growth by micro‐pulling‐down technique: Bi4Ge3O12

Diameter self‐control was established in Bi₄Ge₃O₁₂ fiber crystal growth by micro‐pulling‐down technique. In accordance with Bi₂O₃‐GeO₂ phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi₂O₃ self‐flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 μm in outer diameter. The crystals up to 400 mm long and 50‐300 μm in diameter were grown at pulling‐down rates of 0.04‐1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform (± 10%) diameter and aspect ratio up to 10⁴ were produced without automation of the process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Elastic properties of beryllium-lantanum hexaaluminate crystal, BeLaAl11O19

The elastic properties of beryllium-lantanum hexaaluminate, BeLaAl₁₁O₁₉ (sp. gr. P6₃/mmc), a new crystal from the family of hexagonal aluminates, have been studied. The velocities of elastic-wave propagation in the crystals are measured by a new acoustooptic interference method. The values of all the independent components of elastic-constant tensor are determined and used to calculate a number of dynamic parameters of the crystal such as the Young’s and shear moduli, the modulus of volume elasticity, Poisson’s ratio as well as the Debye temperature and specific heat. The data obtained are compared with the same parameters for the well-known magnesium-lantanum hexaaluminate MgLaAl₁₁O₁₉ laser crystals. It is shown that the dynamic properties of the BeLaAl₁₁O₁₉ crystal are close to those of MgLaAl₁₁O₁₉ and are a promising matrix for designing new laser media.     

Comparative analysis of the heat transfer processes during growth of Bi<Subscript>12</Subscript>GeO<Subscript>20</Subscript> and Bi<Subscript>4</Subscript>Ge<Subscript>3</Subscript>O<Subscript>12</Subscript> crystals by the low-thermal-gradient Czochralski technique

The heat transfer processes occurring in the solid and liquid phases during growth of Bi₁₂GeO₂₀ and Bi₄Ge₃O₁₂ crystals by the low-thermal gradient Czochralski method are analyzed and compared. It is experimentally found that, under similar growth conditions, the deflection of the crystallization front for the Bi₁₂GeO₂₀ crystal is considerably smaller than the deflection of the crystallization front for the Bi₄Ge₃O₁₂ crystal and the faceting of the former front is observed at the earlier stage of pulling. The results of the numerical simulation demonstrate that the different behavior of the crystallization fronts is associated with the difference between the coefficients of thermal absorption in the crystals.     

Crystal growth and dislocation arrangement of Czochralski alexandrite (BeAl2O4:Cr) single crystals

The [001] oriented alexandrite (BeAl₂O₄:Cr) single crystals have been grown by the Czochralski pulling technique. The X-ray topographic investigation indicates that the grown-in dislocations mainly originate from the seed and propagate along the path normal or nearly perpendicular to the growth interface. The dislocation density and arrangement is closely related to the quality of the seed crystal.     

Synthesis of chalcogenide and pnictide crystals in salt melts using a steady-state temperature gradient

Some examples of growing crystals of metals, alloys, chalcogenides, and pnictides in melts of halides of alkali metals and aluminum at a steady-state temperature gradient are described. Transport media are chosen to be salt melts of eutectic composition with the participation of LiCl, NaCl, KCl, RbCl, CsCl, AlCl₃, AlBr₃, KBr, and KI in a temperature range of 850–150°C. Some crystals have been synthesized only using a conducting contour. This technique of crystal growth is similar to the electrochemical method. In some cases, to exclude mutual influence, some elements have been isolated and forced to migrate to the crystal growth region through independent channels. As a result, crystals of desired quality have been obtained using no special equipment and with sizes sufficient for study under laboratory conditions.     

Growth and characterization of InxBi2−xTe3 single crystals

The V–VI group narrow band gap compounds are known to have important photoconductivity and thermoelectric properties. Among these, Bi₂Te₃ is the most potential material for thermoelectric devices having a direct band gap of 0.16 eV. There has been ample study reported on crystal growth and polycrystalline thin films of both pure and indium doped Bi₂Te₃ pertaining to its basic semiconducting, optoelectronic and thermoelectric properties. It has been shown that on exceeding certain limiting concentration of indium in Bi₂Te₃, the conductivity changes from p-type to n-type. However, there is hardly any work reported in literature on crystal growth, dislocation etching and optical band gap of In_xBi_2?xTe₃ (x=0.1, 0.2, 0.5) single crystals. The authors have grown their single crystals using the zone melting method. The freezing interface temperature gradient of 70 °C/ cm^?1 has been found to yield the best quality crystals obtainable at the growth rate of 0.4 cm/h. The as-grown crystals have been observed to exhibit certain typical features on their top free surfaces. The crystals have been characterized using XRD technique. A chemical dislocation etchant has been used for estimating perfection in terms of dislocation density in the crystals. The optical absorption was measured in the wave number range 500 to 4000 cm^?1. The transitions in all the cases were observed to be allowed direct type. The detailed results are reported in the paper.     

Peculiarities of the growth of KDP single crystals with incorporated aluminium oxyhydroxide nanoparticles

Grown for the first time are KH₂PO₄ (KDP) crystals with incorporated aluminium oxyhydroxide Al₂O₃·nH₂O nanoparticles (n=3.5–3.6). The influence of the nanoparticles on the structure perfection and the growth kinetics of the crystal faces are studied. The presence of the nanoparticles in the crystal matrix is confirmed by the results of chemical analysis, X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM). The most essential inhibiting effect of the nanoparticles is observed for the {100} faces. The mechanism of influence of the nanoparticles on the {100} faces growth is explained on the base of the Cabrera–Vermilyea (C–V) model using Langmuir adsorption isotherm.     

Compensation Mechanism in Vanadium and Gallium Doped CdTe and (Cd,Zn)Te

Vanadium and gallium doped CdTe crystals were grown from the vapour phase (modified Markov method) and (Cd_0.9Zn_0.1)Te: V from the melt (vertical Bridgman). The crystals were characterized by photoinduced current transient spectroscopy (PICTS), photoluminescence (PL) and time dependent charge measurements (TDCM). Transitions from different charge states (V²⁺/V³⁺) of the vanadium donor have been observed in the V-doped crystals by PICTS. A shallow donor level (dE = 0.068 eV) and the Ga A-center have been identified by PICTS and PL measurements in CdTe:Ga. In case of V-doping high resistivity is achieved all over the crystal while Ga-doping results in a high resistivity region only in the middle of the crystal. Calculation of the resistivity by means of a compensation model shows that for both dopants an additional not observed deep donor has to be assumed in order to describe the resistivity distributions.     

Dynamic and static orientational disorder in mixed K1 − x (NH4)xI crystals

Earlier, we have shown that, at low temperatures, the mixed K_{1 ? x} (NH₄)_xI crystals show two low-energy resonance modes in the dynamically orientationally disordered region of the α-phase and statically orientationally disordered phase of the orientational glass, absent in the orientationally ordered γ-phase. Below, we report the results of the experimental study of the low-energy resonance and local modes in K_{1 ? x} (NH₄)_xI crystals obtained by the method of inelastic incoherent neutron scattering (IINS) over the wide temperature range.     

Development of methods of X-ray diffraction analysis for determining the composition and structure of sillenite-family crystals

A methodology for refining the crystal structure of sillenites of nominal composition Bi₂₄ M ₂O₄₀ based on the choice of the correct initial model and thermal atomic parameters is reported. The validity of the approach proposed is demonstrated by examples of crystals with M = Si, Fe, or V, for which the real composition is found with allowance for the composition of each structural site. Individual structural details are confirmed by IR and Raman spectroscopy data.     

Growth and Characterization of Na2CaGe6O14 Single Crystals

Transparent, crack-free Na₂CaGe₆O₁₄ (NCG) single crystals were successfully grown using the Czcchralski technique. The largest crystal had 30 mm in total length and 18 mm in maximal diameter. Best crystal quality was achieved under low temperature gradient arrangement. The crystal structure of NCG has been refined from single crystal X-ray diffraction data. Some piezoelectric properties of NCG are reported.     

Growth of Bi<Subscript>12</Subscript>GeO<Subscript>20</Subscript> and Bi<Subscript>12</Subscript>SiO<Subscript>20</Subscript> crystals by the low-thermal gradient Czochralski technique

Bi₁₂SiO₂₀ crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the 〈111〉 and 〈110〉 directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi₁₂SiO₂₀ and Bi₁₂GeO₂₀ crystals, grown by the low-thermal gradient Czochralski technique, are compared. The defect formation in these crystals is studied and their optical homogeneity is analyzed by interferometry.     

Influence of optical inhomogeneity of langasite crystals on the value of measured electro-optic coefficients

The electro-optic coefficients in langasite crystals have been determined by the polarization-optical method. It is established that the crystal inhomogeneity (regions with anomalous refraction and a gradient of the refractive index) affects the measured value r _ij . The influence of polarization of langasite elements on the electro-optic effect during measurements in a dc electric field is shown. A technique used to measure the electro-optic coefficients in a dc electric field on the basis of measurement of the shift of interference fringes in a weakly diverging laser beam is proposed.     

Internal stress in doped NH<Subscript>4</Subscript>Cl:Mn<Superscript>2+</Superscript> crystals

The relationship of the effect of impurity on crystal growth and morphology, along with the internal stress and anomalous birefringence arising upon impurity trapping by a growing crystal, is considered. The NH₄Cl-MnCl₂-H₂O-CONH₃ model system and the heterostructural NH₄Cl:Mn²⁺ crystals formed in it are experimentally studied. It is found that up to 6.63 wt % Mn²⁺ impurity is effectively captured by growing NH₄Cl crystals at an impurity trapping coefficient only slightly below unity. The effect of Mn impurity stabilizes the full-face growth of NH₄Cl crystals with a rhombododecahedral habit in aqueous solutions and a cubic habit in water-formamide solutions. The trapping of manganese impurity by ammonium chloride crystals causes high internal stress (up to 4 GPa) in them, which manifests itself in the form of anomalous birefringence and leads to splitting, twinning, and cracking in NH₄Cl crystals.     

Structure and some physical properties of K2Ni(SO4)2 ⋅ 6H2O crystals

The data obtained from the analysis of the solubility phase diagrams have been used in growth of K₂Ni(SO₄)₂ ? 6H₂O crystals. The X-ray diffraction studies of the crystals grown showed that, at room temperature, the crystals belong to the diffraction class 2/m. The crystal structure is similar to the structures of the Tutton salts. The study of the absorption spectra and the differential scanning calorimetry (DSC) revealed a pronounced anomaly in the vicinity of 45–46°C, which seems to be associated with the structural changes in the crystal.     

The Growth and Properties of K1-yLiyTa1-xNbxO3 Crystal

Potassium lithium tantalate niobate (K_1-yLi_yTa_1-xNb_xO₃, KLTN) crystals with tetragonal phase at room temperature were grown by the flux pulling method. Two-wave coupling energy transfer has been realized in this crystal. The two-wave coupling gain coefficient measured is 0.46 cm⁻¹, and the sign of the dominant carrier is positive. As compared with potassium tantalate niobate (KTN), the dielectric properties of KLTN changed significantly.