Photoinduced electron transfer and solvation in iodide-doped acetonitrile clusters

We have used ultrafast time-resolved photoelectron imaging to measure charge transfer dynamics in iodide-doped acetonitrile clusters I(-)(CH(3)CN)(n) with n = 5-10. Strong modulations of vertical detachment energies were observed following charge transfer from the halide, allowing interpretation of the ongoing dynamics. We observe a sharp drop in the vertical detachment energy (VDE) within 300-400 fs, followed by a biexponential increase that is complete by approximately 10 ps. Comparison to theory suggests that the iodide is internally solvated and that photodetachment results in formation of a diffuse electron cloud in a confined cavity. We interpret the initial drop in VDE as a combination of expansion of the cavity and localization of the excess electron on one or two solvent molecules. The subsequent increase in VDE is attributed to a combination of the I atom leaving the cavity and rearrangement of the acetonitrile molecules to solvate the electron. The n = 5-8 clusters then show a drop in VDE of around 50 meV on a much longer time scale. The long-time VDEs are consistent with those of (CH(3)CN)(n)(-) clusters with internally solvated electrons. Although the excited-state created by the pump pulse decays by emission of a slow electron, no such decay is seen by 200 ps.     

Dynamics of electron solvation in I(-)(CH3OH)n clusters (4 ≤ n ≤ 11)

The dynamics of electron solvation following excitation of the charge-transfer-to-solvent precursor state in iodide-doped methanol clusters, I(-)(CH(3)OH)(n = 4-11), are studied with time-resolved photoelectron imaging. This excitation produces a I···(CH(3)OH)(n)(-) cluster that is unstable with respect to electron autodetachment and whose autodetachment lifetime increases monotonically from ~800 fs to 85 ps as n increases from 4 to 11. The vertical detachment energy (VDE) and width of the excited state feature in the photoelectron spectrum show complex time dependence during the lifetime of this state. The VDE decreases over the first 100-400 fs, then rises exponentially to a maximum with a ~1 ps time constant, and finally decreases by as much as 180 meV with timescales of 3-20 ps. The early dynamics are associated with electron transfer from the iodide to the methanol cluster, while the longer-time changes in VDE are attributed to solvent reordering, possibly in conjunction with ejection of neutral iodine from the cluster. Changes in the observed width of the spectrum largely follow those of the VDEs; the dynamics of both are attributed to the major rearrangement of the solvent cluster during relaxation. The relaxation dynamics are interpreted as a reorientation of at least one methanol molecule and the disruption and formation of the solvent network in order to accommodate the excess charge.     

Electron solvation dynamics in I-(NH3)n clusters

Femtosecond photoelectron spectroscopy (FPES) is used to monitor the dynamics associated with the excitation of the charge-transfer-to-solvent (CTTS) precursor states in I-(NH3)n = 4-15 clusters. The FPE spectra imply that the weakly bound excess electron in the excited state undergoes partial solvation via solvent rearrangement on a time scale of 0.5-2 ps, and this partially solvated state decays by electron emission on a 10-50 ps time scale. Both the extent of solvation and the lifetimes increase gradually with cluster size, in contrast to the more abrupt size-dependent effects previously observed in I-(H2O)n clusters.     

Time-resolved intraband electronic relaxation dynamics of Hg(n) (-) clusters (n=7-13,15,18) excited at 1.0 eV

Time-resolved photoelectron imaging has been used to study the relaxation dynamics of small Hg(n) (-) clusters (n=7-13,15,18) following intraband electronic excitation at 1250 nm (1.0 eV). This study furthers our previous investigation of single electron, intraband relaxation dynamics in Hg(n) (-) clusters at 790 nm by exploring the dynamics of smaller clusters (n=7-10), as well as those of larger clusters (n=11-13,15,18) at a lower excitation energy. We measure relaxation time scales of 2-9 ps, two to three times faster than seen previously after 790 nm excitation of Hg(n) (-), n=11-18. These results, along with size-dependent trends in the absorption cross-section and photoelectron angular distribution anisotropy, suggest significant evolution of the cluster anion electronic structure in the size range studied here. Furthermore, the smallest clusters studied here exhibit 35-45 cm(-1) oscillations in pump-probe signal at earliest temporal delays that are interpreted as early coherent nuclear motion on the excited potential energy surfaces of these clusters. Evidence for evaporation of one or two Hg atoms is seen on a time scale of tens of picoseconds.     

Time-resolved relaxation dynamics of Hgn- (11 <or = n <or = 16,n = 18) clusters following intraband excitation at 1.5 eV

Electron-nuclear relaxation dynamics are studied in Hg(n) (-) (11 相似文献   

Theoretical studies on photoelectron and IR spectral properties of Br2.-(H2O)n clusters

We report vertical detachment energy (VDE) and IR spectra of Br2.-.(H2O)n clusters (n=1-8) based on first principles electronic structure calculations. Cluster structures and IR spectra are calculated at Becke's half-and-half hybrid exchange-correlation functional (BHHLYP) with a triple split valence basis function, 6-311++G(d,p). VDE for the hydrated clusters is calculated based on second order Moller-Plesset perturbation (MP2) theory with the same set of basis function. On full geometry optimization, it is observed that conformers having interwater hydrogen bonding among solvent water molecules are more stable than the structures having double or single hydrogen bonded structures between the anionic solute, Br2.-, and solvent water molecules. Moreover, a conformer having cyclic interwater hydrogen bonded network is predicted to be more stable for each size hydrated cluster. It is also noticed that up to four solvent H2O units can reside around the solute in a cyclic interwater hydrogen bonded network. The excess electron in these hydrated clusters is localized over the solute atoms. Weighted average VDE is calculated for each size (n) cluster based on statistical population of the conformers at 150 K. A linear relationship is obtained for VDE versus (n+3)(-1/3) and bulk VDE of Br2.- aqueous solution is calculated as 10.01 eV at MP2 level of theory. BHHLYP density functional is seen to make a systematic overestimation in VDE values by approximately 0.5 eV compared to MP2 data in all the hydrated clusters. It is observed that hydration increases VDE of bromine dimer anion system by approximately 6.4 eV. Calculated IR spectra show that the formation of Br2.--water clusters induces large shifts from the normal O-H stretching bands of isolated water keeping bending modes rather insensitive. Hydrated clusters, Br2.-.(H2O)n, show characteristic sharp features of O-H stretching bands of water in the small size clusters.     

Anion photoelectron spectroscopy of germanium and tin clusters containing a transition- or lanthanide-metal atom; MGe(n)- (n = 8-20) and MSn(n)- (n = 15-17) (M = Sc-V, Y-Nb, and Lu-Ta)

The electronic properties of germanium and tin clusters containing a transition- or lanthanide-metal atom from group 3, 4, or 5, MGe(n) (M = Sc, Ti, V, Y, Zr, Nb, Lu, Hf, and Ta) and MSn(n) (M = Sc, Ti, Y. Zr, and Hf), were investigated by anion photoelectron spectroscopy at 213 nm. In the case of the group 3 elements Sc, Y, and Lu, the threshold energy of electron detachment of MGe(n)(-) exhibits local maxima at n = 10 and 16, while in the case of the group 4 elements Ti, Zr, and Hf, it exhibits a local minimum only at n = 16, associated with the presence of a small bump in the spectrum. A similar behavior is observed for MSn(n)(-) around n = 16, and these electronic characteristics of MGe(n) and MSn(n) are closely related to those of MSi(n). Compared to MSi(n), however, the larger cavity size of a Ge(n) cage allows metal atom encapsulation at a smaller size n. A cooperative effect between the electronic and geometric structures of clusters with a large cavity of Ge(16) or Sn(16) is discussed together with the results of experiments that probe their geometric stability via their reactivity to H(2)O adsorption.     

Evolution of superhalogen properties in PtCl(n) clusters

We have systematically calculated the ground state geometries, relative stability, electronic structure, and spectroscopic properties of PtCl(n) (n = 1-7) clusters. The bonding in these clusters is dominated by covalent interaction. In neutral clusters, chlorine atoms are chemically bound to Pt up to n = 5. However, in neutral PtCl(6) and PtCl(7) clusters, two of the chlorine atoms bind molecularly while the remaining bind as individual atoms. In the negative ions, this happens only in the case of PtCl(7) cluster. The geometries of both neutral and anionic clusters can be considered as fragments of an octahedron and are attributed to the stabilization associated with splitting of partially filled d orbitals under the chloride ligand field. The electron affinity of PtCl(n) clusters rises steadily with n, reaching a maximum value of 5.81 eV in PtCl(5). PtCl(n) clusters with n ≥ 3 are all superhalogens with electron affinities larger than that of chlorine. The accuracy of our results has been verified by carrying out photoelectron spectroscopy experiments on PtCl(n)(-) anion clusters.     

Time-resolved photoelectron imaging of large anionic methanol clusters: (methanol)n-(n approximately 145-535)

The dynamics of an excess electron in size-selected methanol clusters is studied via pump-probe spectroscopy with resolution of approximately 120 fs. Following excitation, the excess electron undergoes internal conversion back to the ground state with lifetimes of 260-175 fs in (CH3OH)n- (n=145-535) and 280-230 fs in (CD3OD)n- (n=210-390), decreasing with increasing cluster size. The clusters then undergo vibrational relaxation on the ground state on a time scale of 760+/-250 fs. The excited state lifetimes for (CH3OH)n- clusters extrapolate to a value of 157+/-25 fs in the limit of infinite cluster size.     

Probing Structure,Thermochemistry, Electron Affinity and Magnetic Moment of Dysprosium-doped Silicon Clusters DySi_n(n = 3～10) and Their Anions with Double-hybrid Density Functional Theory

The equilibrium geometries, electronic structures and electronic properties including adiabatic electron affinity(AEA), vertical detachment energy(VDE), simulated photoelectron spectroscopy, HOMO-LUMO gap, charge transfer, and magnetic moment for DySi_n(n = 3~10) clusters and their anions were systematically investigated by using the ABCluster global search technique combined with the B3 LYP and B2 PLYP density functional methods. The results showed that the lowest energy structure of neutral DySi_n(n = 3~10) can be regarded as substituting a Si atom of the ground state structure of Si_(n+1) with a Dy atom. For anions, the extra electron effect on the structure is significant. Starting from n = 6, the lowest energy structures of DySi_n~?(n = 3~10) differ from those of neutral. The ground state is quintuplet electronic state for DySi_n(n = 3~10) excluding DySi_4 and DySi_9, which is a septet electronic state. For anions, the ground state is a sextuplet electronic state. The reliable AEA and VDE of DySi_n(n = 3~10) are reported. Analyses of HOMO-LUMO gaps indicated that doping Dy atom to silicon clusters can improve significantly their photochemical reactivity, especially for DySi_9. Analyses of NPA revealed that the 4 f electrons of Dy in DySi_4, DySi_9, and DySi_n~? with n = 4 and 6~10 participate in bonding. That is, DySi_nbelongs to the AB type. The 4 f electrons of Dy atom provide substantially the total magnetic moments for DySi_n and their anions. The dissociation energies of Ln(Ln = Pr, Sm, Eu, Gd, Ho, and Dy) fromLn Sin and their anions were evaluated to examine the relative stabilities.     

Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions

We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability.     

Characterization of solvated electrons in hydrogen cyanide clusters: (HCN)n- (n=3, 4)

Theoretical studies of the solvated electrons (HCN)n- (n=3, 4) reveal a variety of electron trapping possibilities in the (HCN)n (n=3, 4) clusters. Two isomers for (HCN)3- and four isomers for (HCN)4- are obtained at the MP2aug-cc-pVDZ+dBF (diffusive bond functions) level of theory. In view of vertical electron detachment energies (VDEs) at the CCSD(T) level, the excess electron always "prefers" locating in the center of the system, i.e., the isomer with higher coordination number shows larger VDE value. However, the most stable isomers of the solvated electron state (HCN)3- and (HCN)4- are found to be the linear Cinfinitynu and Dinfinityh structures, respectively, but not the fullyl symmetric structures which have the largest VDE values.     

Photoelectron spectroscopy and density functional calculations of CuSi(n)- (n = 4-18) clusters

We conducted a combined anion photoelectron spectroscopy and density functional theory study on the structural evolution of copper-doped silicon clusters, CuSi(n)(-) (n = 4-18). Based on the comparison between the experiments and theoretical calculations, CuSi(12)(-) is suggested to be the smallest fully endohedral cluster. The low-lying isomers of CuSi(n)(-) with n ≥ 12 are dominated by endohedral structures, those of CuSi(n)(-) with n < 12 are dominated by exohedral structures. The most stable structure of CuSi(12)(-) is a double-chair endohedral structure with the copper atom sandwiched between two chair-style Si(6) rings or, in another word, encapsulated in a distorted Si(12) hexagonal prism cage. CuSi(14)(-) has an interesting C(3h) symmetry structure, in which the Si(14) cage is composed by three four-membered rings and six five-membered rings.     

Electronic properties of Si and Ge atoms doped in clusters: In(n)Si(m) and In(n)Ge(m)

Electronic properties of silicon and germanium atom doped indium clusters, In(n)Si(m) and In(n)Ge(m), were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for In(n)Si(1) and In(n)Ge(1) exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In(n) clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the 1d shell formed by monovalent In atoms.     

Asymmetrically solvated anion with both kinetic and thermodynamic stabilities: Theoretical studies on the cluster anions (HF)n - (n=3-6)

At the level of MP2 with the aug-cc-pVDZ and aug-cc-pVTZ basis sets supplemented with diffuse bond functions, the authors searched the potential energy surfaces of (HF)(n) (-) (n=3-6). In accordance with the literature, they found that the symmetrically solvated-electron anion (3(FH){e}) possesses the largest vertical detachment energy (VDE), while the dipole-bound anion ((FH)(3){e}) is the lowest isomer in energy for (HF)(3) (-). Their calculations demonstrated that, with the increase of the cluster size, the asymmetric (FH)(a){e}(HF)(b) cluster is stabilized with a simultaneously increased VDE. Thus they predicted that, for (HF)(6) (-), the (FH)(4){e}(HF)(2) cluster is both kinetically and thermodynamically most stable, possessing the largest VDE and being the global minimum at the same time.     

Ultrafast vectorial and scalar dynamics of ionic clusters: azobenzene solvated by oxygen

The ultrafast dynamics of clusters of trans-azobenzene anion (A-) solvated by oxygen molecules was investigated using femtosecond time-resolved photoelectron spectroscopy. The time scale for stripping off all oxygen molecules from A- was determined by monitoring in real time the transient of the A- rise, following an 800 nm excitation of A- (O2)n, where n = 1-4. A careful analysis of the time-dependent photoelectron spectra strongly suggests that for n > 1 a quasi-O4 core is formed and that the dissociation occurs by a bond cleavage between A- and conglomerated (O2)n rather than a stepwise evaporation of O2. With time and energy resolutions, we were able to capture the photoelectron signatures of transient species which instantaneously rise (<100 fs) then decay. The transient species are assigned as charge-transfer complexes: A.O2- for A- O2 and A.O4-(O2)n-2 for A-(O2)n, where n = 2-4. Subsequent to an ultrafast electron recombination, A- rises with two distinct time scales: a subpicosecond component reflecting a direct bond rupture of the A- -(O2)n nuclear coordinate and a slower component (1.6-36 ps, increasing with n) attributed to an indirect channel exhibiting a quasistatistical behavior. The photodetachment transients exhibit a change in the transition dipole direction as a function of time delay. Rotational dephasing occurs on a time scale of 2-3 ps, with a change in the sign of the transient anisotropy between A- O2 and the larger clusters. This behavior is a key indicator of an evolving cluster structure and is successfully modeled by calculations based on the structures and inertial motion of the parent clusters.     

Probing the electronic structure and band gap evolution of titanium oxide clusters (TiO(2))(n)(-) (n = 1-10) using photoelectron spectroscopy

TiO2 is a wide-band-gap semiconductor, and it is an important material for photocatalysis. Here we report an experimental investigation of the electronic structure of (TiO2)n clusters and how their band gap evolves as a function of size using anion photoelectron spectroscopy (PES). PES spectra of (TiO2)n- clusters for n = 1-10 have been obtained at 193 nm (6.424 eV) and 157 nm (7.866 eV). The high photon energy at 157 nm allows the band gap of the TiO2 clusters to be clearly revealed up to n = 10. The band gap is observed to be strongly size-dependent for n < 7, but it rapidly approaches the bulk limit at n = 7 and remains constant up to n = 10. All PES features are observed to be very broad, suggesting large geometry changes between the anions and the neutral clusters due to the localized nature of the extra electron in the anions. The measured electron affinities and the energy gaps are compared with available theoretical calculations. The extra electron in the (TiO2)n- clusters for n > 1 appears to be localized in a tricoordinated Ti atom, creating a single Ti3+ site and making these clusters ideal molecular models for mechanistic understanding of TiO2 surface defects and photocatalytic properties.     

Microsolvation of the dicyanamide anion: [N(CN)(2)(-)](H(2)O)n (n = 0-12)

Photoelectron spectroscopy is combined with ab initio calculations to study the microsolvation of the dicyanamide anion, N(CN)(2)(-). Photoelectron spectra of [N(CN)(2)(-)](H2O)n (n = 0-12) have been measured at room temperature and also at low temperature for n = 0-4. Vibrationally resolved photoelectron spectra are obtained for N(CN)(2)(-), allowing the electron affinity of the N(CN)2 radical to be determined accurately as 4.135 +/- 0.010 eV. The electron binding energies and the spectral width of the hydrated clusters are observed to increase with the number of water molecules. The first five waters are observed to provide significant stabilization to the solute, whereas the stabilization becomes weaker for n > 5. The spectral width, which carries information about the solvent reorganization upon electron detachment in [N(CN)(2)(-)](H2O)n, levels off for n > 6. Theoretical calculations reveal several close-lying isomers for n = 1 and 2 due to the fact that the N(CN)(2)(-) anion possesses three almost equivalent hydration sites. In all the hydrated clusters, the most stable structures consist of a water cluster solvating one end of the N(CN)(2)(-) anion.     

Structures and magnetic properties of CrSi(n) (-) (n = 3-12) clusters: Photoelectron spectroscopy and density functional calculations

Chromium-doped silicon clusters, CrSi(n) (-)(n = 3-12), were investigated with anion photoelectron spectroscopy and density functional theory calculations. The combination of experimental measurement and theoretical calculations reveals that the onset of endohedral structure in CrSi(n) (-) clusters occurs at n = 10 and the magnetic properties of the CrSi(n) (-) clusters are correlated to their geometric structures. The most stable isomers of CrSi(n) (-) from n = 3 to 9 have exohedral structures with magnetic moments of 3-5μ(B) while those of CrSi(10) (-), CrSi(11) (-), and CrSi(12) (-) have endohedral structures and magnetic moments of 1μ(B.).     

Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation

The TaSi(n) (n=1-13) clusters with doublet, quartet, and sextet spin configurations have been systematically investigated by a relativistic density functional theory with the generalized gradient approximation available in Amsterdam density functional program. The total bonding energies, equilibrium geometries, Mulliken populations as well as Hirshfeld charges of TaSi(n) (n=1-13) clusters are calculated and presented. The emphasis on the stabilities and electronic properties is discussed. The most stable structures of the small TaSi(n) (n=1-6) clusters and the evolutional rule of low-lying geometries of the larger TaSi(n) (n=7-13) clusters are obtained. Theoretical results indicate that the most stable structure of TaSi(n) (n=1-6) clusters keeps the similar framework as the most stable structure of Si(n+1) clusters except for TaSi(3) cluster. The Ta atom in the lowest-energy TaSi(n) (n=1-13) isomers occupies a gradual sinking site, and the site moves from convex, to flatness, and to concave with the number of Si atom varying from 1 to 13. When n=12, the Ta atom in TaSi(12) cluster completely falls into the center of the Si frame, and a cagelike TaSi(12) geometry is formed. Meanwhile, the net Mulliken and Hirsheld populations of the Ta atom in the TaSi(n) (n=1-13) clusters vary from positive to negative, manifesting that the charges in TaSi(n) (n>/=12) clusters transfer from Si atoms to Ta atom. Additionally, the contribution of Si-Si and Si-Ta interactions to the stability of TaSi(n) clusters is briefly discussed. Furthermore, the investigations on atomic averaged binding energies and fragmentation energies show that the TaSi(n) (n=2,3,5,7,10,11,12) clusters have enhanced stabilities. Compared with pure silicon clusters, a universal narrowing of highest occupied molecular orbital-lowest unoccupied molecular orbital gap in TaSi(n) clusters is found.