GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导. 关键词： 球形量子点 解析方法 平面波展开方法 有效质量     

有效质量差异和电场对GaN/AlxGa1-xN球形量子点电子结构的影响

用平面波展开法对GaN/AlxGa1-xN球形量子点中类氢杂质态能级随量子点半径Al组分以及结合能随Al组分的变化规律进行了详细讨论.计算了量子点内外有效质量差异对杂质态能级和结合能的修正,结果表明对于Al组分较高的GaN/AlxGa1-xN球形量子点,电子有效质量差异对杂质能级和结合能的修正不能忽略.考虑电子有效质量差异后,进一步具体计算了杂质结合能随量子点半径、杂质位置以及外电场的变化规律.     

压力下应变异质结中施主杂质态的Stark效应

对应变GaN/Al_xGa_1-xN异质结系统,考虑理想界面突变势垒,引入简化相干势近似,采用变分法讨论了流体静压力下外界电场对束缚于界面附近的浅杂质态结合能的影响.对GaN为衬底的闪锌矿应变异质结,分别计算了(001)和(111)取向时杂质态的结合能随压力、杂质位置、电场强度以及组分的变化关系.结果表明,杂质态结合能随流体静压力呈近线性变化.电场对杂质态的Stark效应则随杂质位置不同而呈现谱线蓝、红移动.此外,还讨论了在不同压力情况下,Al组分对杂质结合能的影响.当杂质处于GaN材料中且距界面较远时,Al组分的增加使电子的二维特性增强,从而使结合能增大,且压力加剧增幅的增加;当杂质处于Al_xGa_1-xN材料中,Al组分的增加削弱了杂质与电子间的库仑相互作用,故而结合能降低. 关键词： xGa_1-xN异质结')" href="#">GaN/Al_xGa_1-xN异质结 杂质态 压力 Stark效应     

纤锌矿GaN/AlxGa1-xN量子阱中极化子能量

采用LLP变分方法研究了纤锌矿GaN/Al_xGa_1-xN量子阱材料中极化子的能级,给出极化子基态能量、第一激发态能量和第一激发态到基态的跃迁能量与量子阱宽度和量子阱深度变化的函数关系。研究结果表明,极化子基态能量、第一激发态能量和跃迁能量随着阱宽L的增大而开始急剧减小,然后缓慢下降,最后接近于体材料GaN中的相应值。基态能量和第一激发态到基态的跃迁能量随着量子阱深度的增加而逐渐增加,窄阱时这一趋势更明显。纤锌矿氮化物量子阱中电子-声子相互作用对能量的贡献比较大,这一值(约40meV)远远大于闪锌矿(GaAs/Al_xGa_1-xAs)量子阱中相应的值(约3meV)。因此讨论GaN/Al_xGa_1-xN量子阱中电子态问题时应考虑电子-声子相互作用。     

内嵌InAs量子点的δ掺杂GaAs/AlxGa1-xAs二维电子气特性分析

采用分子束外延技术对δ掺杂GaAs/Al_xGa_1-xAs二维电子气(2DEG)样品进行了生长. 在样品生长过程中, 分别改变掺杂浓度(N_d)、空间隔离层厚度(W_d) 和Al_xGa_1-xAs中Al组分(x_Al)的大小, 并在双温(300 K, 78 K)条件下对生长的样品进行了霍尔测量; 结合测试结果, 分别对N_d, W_d及x_Al与GaAs/Al_xGa_1-xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论. 生长了包含有低密度InAs量子点层的δ掺杂GaAs/Al_xGa_1-xAs 2DEG 样品, 采用梯度生长法得到了不同密度的InAs量子点. 霍尔测量结果表明, 随着InAs量子点密度的增加, GaAs/Al_xGa_1-xAs 2DEG的迁移率大幅度减小, 实验中获得了密度最低为16×10⁸/cm²的InAs量子点样品. 实验结果为内嵌InAs量子点的δ掺杂GaAs/Al_xGa_1-xAs 2DEG的研究和应用提供了依据和参考. 关键词： 二维电子气 InAs量子点 载流子浓度 迁移率     

氮化物抛物量子阱中类氢杂质态能量

采用变分方法研究氮化物抛物量子阱(GaN/Al_xGa_1-xN)材料中类氢杂质态的能级,给出基态能量、第一激发态能量、结合能和跃迁能量等物理量随抛物量子阱宽度变化的函数关系.研究结果表明,基态能量、第一激发态能量、基态结合能和1s→2p±跃迁能量随着阱宽L的增大而减小,最后接近于GaN中3D值.GaN/Al_0.3Ga_0.7N抛物量子阱对杂质态的束缚程度比GaAs/Al_0.3Ga_0.7As抛物量子阱强,因此,在GaN/Al_0.3-Ga_0.7N抛物量子阱中束缚于杂质中心处的电子比在GaAs/Al_0.3Ga_0.7As抛物量子阱中束缚于杂质中心处的电子稳定.     

AlxGa1-xN/GaN双量子阱的结构和掺杂浓度对子带间跃迁波长和吸收系数的影响

用薛定谔方程和泊松方程自洽计算的方法研究了Al_0.75Ga_0.25N/GaN对称双量子阱(DQWs)中子带间跃迁(ISBT)的波长和吸收系数对中间耦合势垒高度、中间耦合势垒宽度、势阱宽度和势垒掺杂浓度的依赖关系.研究发现,第一奇序子带S_1ood与第二偶序子带S_2even ISBT波长随着中间耦合势垒高度的降低而变短.当中间耦合势垒高度高于0.62 eV时,S_{1odd< 关键词： 自洽 x}Ga_1-xN/GaN双量子阱')" href="#">Al_xGa_1-xN/GaN双量子阱 子带间跃迁     

应变纤锌矿GaN/AlχGa1-χN柱形量子点中类氢施主杂质态结合能的压力效应

考虑应变,在有效质量、有限高势垒近似下,变分研究了纤锌矿GaN/Al_xGa_1-xN柱形量子点中类氢施主杂质态结合能随流体静压力、杂质位置及量子点结构参数（量子点高度、半径、Al含量）的变化关系.结果表明,类氢施主杂质态结合能随流体静压力增大而增大,且在量子点尺寸较小时,流体静压力对杂质态结合能的影响更为显著.受流体静压力的影响,杂质态结合能随量子点高度、半径的增加而单调减少,且变化趋势加剧;随A1含量增加而增大的趋势变缓.无论是否施加流体静压力,随着类氢施主杂质从量子点左界面沿材料生长方向移至右界面,杂质态结合能在量子点的右半部分存在一极大值.流体静压力使得极大值点向量子点中心偏移.     

GaAs/AlxGa1-xAs球形量子点中的电子结构

详细讨论了GaAs/Al_xGa_1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律，并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外，用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算，并对计算结果做了比较，发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.     

极化诱导的内建电场对Mn δ掺杂的GaN/AlGaN量子阱居里温度的调制

采用传输矩阵方法分析极化诱导的内建电场对Mn δ掺杂的GaN/Al_xGa_1-xN量子阱居里温度(T_C)的调制作用.通过解薛定谔方程计算出在不同的内建电场条件下半导体量子阱局域态内的基态空穴能级和波函数分布情况，并在此基础上确定量子阱内Mn δ掺杂情况下T_C随内建电场的变化趋势，分析了不同量子阱结构引起的内建电场分布变化及其对T_C的影响.在耦合双量子阱中通过调节左右阱的不对称性可以得到T_C近3倍的增长. 关键词： GaN 量子阱 内建电场 居里温度     

Bound polaron in a wurtzite GaN/AlxGa1 − xN ellipsoidal finite-potential quantum dot

A variational method is used to study the ground state of a bound polaron in a weakly oblate wurtzite GaN/Al_xGa_1 − xN ellipsoidal quantum dot. The binding energy of the bound polaron is calculated by taking the electron couples with both branches of LO-like and TO-like phonons due to the anisotropic effect into account. The interaction between impurity and phonons has also been considered to obtain the binding energy of a bound polaron. The results show that the binding energy of bound polaron reaches a peak value as the quantum dot radius increases and then diminishes for the finite potential well. We found that the binding energy of bound polaron is reduced by the phonons effect on the impurity states, the contribution of LO-like phonon to the binding energy is dominant, the anisotropic angle and ellipticity influence on the binding energy are small.     

The binding energy of hydrogen-like impurity in quantum dots with convex bottom in magnetic field

Within the framework of effective mass approximation and variational method, the electronic and impurity states in spherical quantum dots with convex bottom in magnetic field are calculated. Calculations are carried out both for on-center and off-center impurities. The impurity binding energy dependencies on radius, measure of convexity of quantum dot bottom, impurity position and magnetic field induction are obtained for the Ga_1-xAl_xAs/Ga_1-yAl_yAs system.     

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/Al_xGa_1−xN spherical quantum dot (QD) is investigated using the plane wave basis. The results show that the binding energy is highly dependent on impurity position, QD size, Al content and external field. The binding energy is largest when the donor impurity is located at the centre of the QD and the binding energy of impurity is degenerate for symmetrical positions with respect to the centre of QD without the external electric field. The maximum of the donor binding energy is shifted from the centre of QD and the degenerating energy levels for symmetrical positions with respect to the centre of QD are split in the presence of the external electric field. The binding energy is more sensitive to the external electric field for the larger QD and lower Al content. In addition, the Stark shift of the binding energy is also calculated.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions under pressure

The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/Al x Ga 1 x N heterojunctions under hydrostatic pressure and an external electric field is investigated by using a variational method and a simplified coherent potential approximation.The variations of Stark energy shift with electric field,impurity position,Al component and areal electron density are discussed.Our results show that the screening dramatically reduces both the blue and red shifts as well as the binding energies of impurity states.For a given impurity position,the change in binding energy is more sensitive to the increase in hydrostatic pressure in the presence of the screening effect than that in the absence of the screening effect.The weakening of the blue and red shifts,induced by the screening effect,strengthens gradually with the increase of electric field.Furthermore,the screening effect weakens the mixture crystal effect,thereby influencing the Stark effect.The screening effect strengthens the influence of energy band bending on binding energy due to the areal electron density.     

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Within the framework of the effective-mass approximation, the exciton states and interband optical transitions in In_xGa_1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated using a variational method, in which the important built-in electric field (BEF) effects, dielectric-constant mismatch and three-dimensional confinement of the electron and hole in In_xGa_1−xN QDs are considered. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the exciton oscillator strength.     

Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots

Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/Al_xGa_1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/Al_xGa_1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/Al_xGa_1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness L^AlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.     

Pressure-induced non-linear optical properties in a wurtzite GaN/Al x Ga1− x N strained quantum dot

The effects of hydrostatic pressure on the exciton ground-state binding energy and the interband emission energy in a GaN/Al _x Ga_{1??? x} N quantum dot are investigated. The effects of strain and the internal field due to spontaneous and piezo-electric polarizations are included in the Hamiltonian. Numerical calculations are performed using variational procedure within the framework of single-band effective-mass approximation. The dependence of non-linear optical processes on the dot sizes is brought out in the influence of pressure. Pressure-induced optical properties are obtained using the compact density matrix approach. The effects of hydrostatic pressure on the linear, third-order non-linear optical absorption coefficients and the refractive index changes of the exciton as a function of photon energy are calculated. Our results show that the effects of pressure and the geometrical confinement have great influence on the optical properties of GaN/Al _x Ga_{1??? x} N dot.