Circular TE/sub 0n/ Mode Filters for Guided Millimeter-Wave Transmission

A millimeter-wave circular TE/sub 01/ mode waveguide generates undesired circularly symmetric modes (TE/sub 02/, TE/sub 03/ modes, etc.) in bends or at discontinuities along a waveguide line. This paper describes the theory and experiment on the TE/sub 02/ and TE/sub 03/ mode filters developed for guided millimeter-wave transmission. The experimental results of two improved TE/sub 03/ mode filters show that the attenuation of the TE/sub 03/ mode is more than 16 dB for one type over the 40-70-GHz range. The TE/sub 01/-mode insertion loss of another type is about 0.2 dB over the 40-80-GHz range. The present mode filters can be applied to various high-speed guided rnillimeter-wave systems currently under development.     

n/sup k/-pulse position modulation for optical wireless communication

An original analysis is presented for n/sup k/-PPM in which the information is conveyed by the position of k pulses, each within their own frame of n slots, giving n/sup k/ PPM symbols. Comparisons are made with multiple PPM (MPPM) and it is demonstrated that n/sup k/-PPM offers improved orthogonality, a simplified circuit implementation and comparable receiver sensitivity.     

Analysis and simulation of a mid-infrared P/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30//n/sup 0/-InAs/sub 0.89/Sb/sub 0.11//N/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30/ double heterojunction photodetector grown by LPE

A photovoltaic detector based on an N/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30//n/sup 0/-InAs/sub 0.89/Sb/sub 0./$ d1/sub 1//P/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30/ double heterostructure (DH) suitable for operation in the mid-infrared (MIR) spectral region (2 to 5 /spl mu/m) at room temperature has been studied. A physics based closed form model of the device has been developed to investigate the relative importance of the different mechanisms which determine dark current and photoresponse. The results obtained on the basis of the model have been compared and contrasted with those obtained from experimental measurements on DH detectors fabricated previously in our laboratory using liquid phase epitaxy (LPE). The model helps to explain the various physical mechanisms that shape the characteristics of the device under room temperature operation. It can also be used to optimize the performance of the photodetector in respect of dark current, responsivity and detectivity. A comparison of theoretical predictions and experimental results revealed that Shockley-Read-Hall (SRH) recombination is more important than Auger recombination in determining the room temperature detector performance when the concentration of nonradiative recombination centers in our material exceeds 10/sup 17/ cm/sup -3/. Furthermore, compositional grading in the cladding regions of the double heterostructure has been found to be responsible for the reduction of the detectivity of the device in the shorter wavelength region.     

TM/sub 0n0/ - and TM/sub m10/ - Mode Oversized Cylindrical Cavity Power Combiners

TM/sub m10/ -mode power combining is treated in addition to conventional TM/sub 0n0/-mode combining in a multiple-device oversized cylindrical cavity having a window output structure. Mode analysis gives the condition for stable power-combining operation in the desired mode. By experiments both on TM/sub 0n0/ -mode combining (n = 2, 3, and 4) and on TM/sub m10/ -mode combining (m = 2 and 8), it is shown that almost perfect power combining in the TM/sub 210/ mode can be achieved as in the TM/sub 020/ mode and that the power combining efficiency decreases gradually with increasing n or m. A possible advantage of TM/sub m10/ -mode combining in an oversized cavity is suggested based on the experimental result that power combining in the TM/sub 810/ mode gives higher efficiency than in the TM/sub 040/ mode.     

Combined k-out-of-n:G, and consecutive k/sub c/-out-of-n:G systems

Qualification tests for a system are normally carried out according to either a k-out-of-n:G scheme, or a consecutive k/sub c/-out-of-n:G structure. The reliability of a combination of the two systems is evaluated, showing its benefit over each of the individual structures. As expected, the mean time to failure of the combined system is larger than any of them. Generalizations of the analysis are presented for tests with multi-state results, and for dependent tests. Illustrative numerical results are presented to substantiate the theory.     

A new architecture for the Viterbi decoder for code rate k/n

A novel VLSI architecture is proposed for implementing a long constraint length Viterbi decoder (VD) for code rate k/n. This architecture is based on the encoding structure where k input bits are shifted into k shift registers in each cycle. The architecture is designed in a hierarchical manner by breaking the system into several levels and designing each level independently. The tasks in the design of each level range from determining the number of computation units, and the interconnection between the units, to the allocation and scheduling of operations. Additional design issues such as in-place storage of accumulated path metrics and trace back implementation of the survivor memory have also been addressed. The resulting architecture is regular, has a foldable global topology and is very flexible. It also achieves a better than linear trade-off between hardware complexity and computation time     

The rank and kernel of extended 1-perfect /spl Zopf//sub 4/-linear and additive non-/spl Zopf//sub 4/-linear codes

A binary extended 1-perfect code of length n + 1 = 2/sup t/ is additive if it is a subgroup of /spl Zopf//sub 2//sup /spl alpha// /spl times/ /spl Zopf//sub 4//sup /spl beta//. The punctured code by deleting a /spl Zopf//sub 2/ coordinate (if there is one) gives a perfect additive code. 1-perfect additive codes were completely characterized and by using that characterization we compute the possible parameters /spl alpha/, /spl beta/, rank, and dimension of the kernel for extended 1-perfect additive codes. A very special case is that of extended 1-perfect /spl Zopf//sub 4/-linear codes.     

TeO/sub 2/-based glasses containing Nb/sub 2/O/sub 5/, TiO/sub 2/, and WO/sub 3/ for discrete Raman fiber amplification

We describe a highly stable glass family based on the combination of TeO/sub 2/ with heavy metal-oxides of Nb, Ti, W. We show that these glasses have large Raman gain, a broad Raman spectrum, and large negative dispersion. They are, thus, potentially useful in a variety of specialty fiber applications, such as discrete Raman amplification.     

Analysis of modified Erlangian input single-server model, E/sub k//G/1

The single-server general queuing model G1/G/1 is studied for a modified Erlangian input that covers a wide range of bursty and nonbursty input processes. The E/sub k//G/1 model is analyzed using spectral factorization, and explicit form performance is evaluated in terms of the mean and variance of the waiting time.<>     

n中取k表决系统的可靠性评估

文章主要以2/3[G]系统为例对k/n[G]系统的可靠性进行评估,并同单系统进行比较,为选取k/n[G]作为系统模型提供依据。最后讨论了k/n[G]系统的表决器可靠性要求。     

Spectral characterisation of n/sup k/ pulse position modulation format

n/sup k/ pulse position modulation (PPM) is a new modulation format that has recently been proposed for the optical wireless channel. For the first time, a full spectral characterisation of n/sup k/-PPM is considered and original expressions are presented, which are validated numerically, for predicting both the continuous and discrete spectrum.     

H/sub /spl infin// control of differential linear repetitive processes

Repetitive processes are a distinct class of two-dimensional (2-D) systems (i.e., information propagation in two independent directions) of both systems theoretic and applications interest. They cannot be controlled by direct extension of existing techniques from either standard [termed one-dimensional (1-D) here] or 2-D systems theory. Here, we give new results on the relatively open problem of the design of control laws using an H/sub /spl infin// setting. These results are for the sub-class of so-called differential linear repetitive processes which arise in applications.     

Refractive index step and optical confinement in Ga/sub 0.86/In/sub 0.14/As/sub 0.13/Sb/sub 0.87//Ga/sub 0.73/Al/sub 0.27/As/sub 0.02/Sb/sub 0.98/ double heterostructure lasers emitting at 2.2 mu m

Using theoretical fitting to measured transverse far field patterns in Ga/sub 0.86/In/sub 0.14/As/sub 0.13/Sb/sub 0.87//Ga/sub 0.73/Al/sub 0.27/As/sub 0.02/Sb/sub 0.98/ DH lasers emitting at 2.2 mu m the authors estimated the value of the active layer refractive index as 3.78. This value, higher than assumed earlier based on theoretical calculations, ensures good optical confinement for this kind of heterostructure and provides a good theoretical fit with the authors' experimental data of threshold current density against active layer thickness.<>     

High-performance Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//HfO/sub 2//Si structure for nondestructive readout memory

Metal-ferroelectric-insulator-semiconductor (MFIS) capacitors with 390-nm-thick SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) ferroelectric film and 8-nm-thick hafnium oxide (HfO/sub 2/) layer on silicon substrate have been fabricated and characterized. It is demonstrated for the first time that the MFIS stack exhibits a large memory window of around 1.08 V at an operation voltage of 3.5 V. Moreover, the MFIS memory structure suffers only 18% degradation in the memory window after 10/sup 9/ switching cycles. The excellent performance is attributed to the formation of well-crystallized SBT perovskite thin film on top of the HfO/sub 2/ buffer layer, as evidenced by the distinctive sharp peaks in X-ray diffraction (XRD) spectra. In addition to its relatively high /spl kappa/ value, HfO/sub 2/ also serves as a good seed layer for SBT crystallization, making the proposed Pt/SrBi/sub 2/Ta/sub 2/O/sub 9//HfO/sub 2//Si structure ideally suitable for low-voltage and high-performance ferroelectric memories.     

Modeling of tunneling currents through HfO/sub 2/ and (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x/ gate stacks

We present a physical modeling of tunneling currents through ultrathin high-/spl kappa/ gate stacks, which includes an ultrathin interface layer, both electron and hole quantization in the substrate and gate electrode, and energy band offsets between high-/spl kappa/ dielectrics and Si determined from high-resolution XPS. Excellent agreements between simulated and experimentally measured tunneling currents have been obtained for chemical vapor deposited and physical vapor deposited HfO/sub 2/ with and without NH/sub 3/-based interface layers, and ALD Al/sub 2/O/sub 3/ gate stacks with different EOT and bias polarities. This model is applied to more thermally stable (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x/ gate stacks in order to project their scalability for future CMOS applications.     

Fast recursive basis function estimators for identification oftime-varying processes

When system parameters vary rapidly with time, the weighted least squares filters are not capable of following the changes satisfactorily; some more elaborate estimation schemes, based on the method of basis functions, have to be used instead. The basis function estimators have increased tracking capabilities but are computationally very demanding. The paper introduces a new class of adaptive filters, based on the concept of postfiltering, which have improved parameter tracking capabilities that are typical of the basis function algorithms but, at the same time, have pretty low computational requirements, which is typical of the weighted least squares algorithms     

Long-wavelength In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As large-area avalanche photodiodes and arrays

Large-area (500-/spl mu/m diameter) mesa-structure In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiodes (APDs) are reported. The dark current density was /spl sim/2.5/spl times/10/sup -2/ nA//spl mu/m/sup 2/ at 90% of breakdown; low surface leakage current density (/spl sim/4.2 pA//spl mu/m) was achieved with wet chemical etching and SiO/sub 2/ passivation. An 18 /spl times/ 18 APD array with uniform distributions of breakdown voltage, dark current, and multiplication gain has also been demonstrated. The APDs in the array achieved 3-dB bandwidth of /spl sim/8 GHz at low gain and a gain-bandwidth product of /spl sim/120 GHz.     

547-GHz f/sub t/ In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As HEMTs with reduced source and drain resistance

We fabricated 30-nm gate pseudomorphic channel In/sub 0.7/Ga/sub 0.3/As-In/sub 0.52/Al/sub 0.48/As high electron mobility transistors (HEMTs) with reduced source and drain parasitic resistances. A multilayer cap structure consisting of Si highly doped n/sup +/-InGaAs and n/sup +/-InP layers was used to reduce these resistances while enabling reproducible 30-nm gate process. The HEMTs also had a laterally scaled gate-recess that effectively enhanced electron velocity, and an adequately long gate-channel distance of 12nm to suppress gate leakage current. The transconductance (g/sub m/) reached 1.5 S/mm, and the off-state breakdown voltage (BV/sub gd/) defined at a gate current of -1 mA/mm was -3.0 V. An extremely high current gain cutoff frequency (f/sub t/) of 547 GHz and a simultaneous maximum oscillation frequency (f/sub max/) of 400 GHz were achieved: the best performance yet reported for any transistor.     

Preparation and growth of thin film Pb/sub 2/Sr/sub 2/Ca/sub 0.5/Y/sub 0.5/Cu/sub 3/O/sub 8+ delta / superconductors by laser ablation

For the first time, the preparation of thin films of superconducting Pb/sub 2/Sr/sub 2/Y/sub 0.5/Ca/sub 0.5/Cu/sub 3/O/sub 8+ delta / material using standard bulk target preparation conditions and the laser ablation technique is reported. In common with much of the bulk characteristics, it is found that the width of the superconducting transition is large, extending from T/sub c,onset/ between 70-83 K and T/sub c,zero/ between 16-20 K.<>     

An optical investigation of electronic excitations in the high temperature superconductors YBa/sub 2/Cu/sub 3/O/sub 7- delta / and Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+ Delta /

The results of Raman scattering from superconducting gap excitations in the high T/sub c/ compounds YBa/sub 2/Cu/sub 3/O/sub 7- delta / and Bi/sub 2/Sr/sub 2/CaCu/sub 2/O/sub 8+ Delta / are compared. In the normal state, both materials exhibit strong electronic interband scattering which manifests itself as a broad background continuum having both A/sub 1g/ and B/sub 1g/ symmetry components. At low temperatures a redistribution of this electronic scattering occurs, indicative of the formation of a superconducting gap in these compounds. The two symmetries exhibit distinct redistribution, however, denoting strong anisotropy. At temperatures well below T/sub c/, both compounds exhibit residual low-energy scattering, a feature suggestive of the coexistence of normal electrons and superconducting quasi-particles.<>