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研制了低阈值电流、高量子效率670nm压缩应变单量子阱GaInP/AIGalnP脊形波导激光器。测量解理成的激光器条,腔长为300μm时,阈值电流为12.8mA,双面外部量子效率之和达到94.6%。 相似文献
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综述了近几年来国外在量子阱半导体激光器方面的开发现状,着重阐述了在提高器件性能方面获得低阈值电流,降低α参数和线宽的重要性。 相似文献
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为了研究量子阱结构对半导体环形激光器阈值电流的影响,从F-P腔激光器的振荡条件出发,分析了半导体环形激光器的阈值电流密度与量子阱结构参量的函数关系,并推导出最佳量子阱数的表达式。利用器件仿真软件ATLAS建立环形激光器的等效模型,仿真、分析了不同工作温度下,量子阱数、阱厚及势垒厚度对阈值电流的影响。结果表明,阈值电流随量子阱数和阱厚的增加先减小后增大,存在一组最佳值;在确定合适的量子阱数和阱厚后,相对较窄的势垒厚度有助于进一步降低阈值电流;采用GaAs/AlGaAs材料体系和器件结构,其最佳量子阱结构参量为M=3,dw=20nm及db=10nm。 相似文献
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本文主要从量子理论中的电子波函数所满足的薛定锷方程出发,讨论了量子阱理论。进而介绍多量手阱激光器(MQWL)的重要特征之一——阈值电流密度随量子阱的数目变化的情况。 相似文献
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本文综述了量子阱应变层异质结构的大功率半导体激光器的优化特性,阐述了大功率激光器的一些重要应用,比如用808nm波长的大功率激光器可作为泵浦光源代替庞大的氙灯泵浦系统,还可以用作激光核反应的前级大功率激光漂;大功率半导体激光器发射的波长可以精确地控制在980nm,并能高效率地耗合到光纤中去,有很高的泵浦效率,从而半导体激光泵浦的光纤放大器为光通信技术的发展作了突破性贡献,大功率半导体激光器还在军工 相似文献
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By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained Gax In1-xP/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain 相似文献
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量子级联激光器(QCL)是中红外波段重要的激光光源,其中,可调谐中红外量子级联激光器具有单纵模、频率可调谐的优点,成为目前研究的热点。可调谐中红外量子级联激光器主要通过分布反馈(DFB)光栅、分布布拉格反射(DBR)光栅、外腔衍射光栅等方法实现。本文介绍了中红外量子级联激光器的基本原理,分别归纳、总结了近年来DFB、DBR可调谐量子级联激光器以及外腔可调谐量子级联激光器的研究进展,讨论了各种可调谐方法的优缺点。最后,对可调谐量子级联激光器的发展趋势进行了展望。 相似文献
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In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by using advanced crystal growth methods such as MBE and MOVPE. The laser performance successes gained using quantum wells in optoelectronic devices can be extended by adopting quantum wire and quantum dot structures. There have been several reports of successful lasing action in semiconductor dot structures within the past few years. In this article I will briefly review the recent progress in the development of quantum dot lasers. 相似文献
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在量子阱半导体激光器结构中采用优化超晶格缓冲层来掩埋衬底缺陷,获得了性能优良的激光器。对超晶格缓冲层所具有的“量子阱陷阱效应”进行了理论分析。 相似文献
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InGaAs(P)/InP应变量子阱和超晶格的光电性质 总被引:1,自引:0,他引:1
利用低压金属有机化合物化学汽相沉积(MOCVD)生长技术在InP衬底上生长InGaAs/InP应变量子阱,超晶格和InGaAsP/InP量子阱结构材料,利用77K光荧光(PL)测量这一应变量了阱和量子阱的光学性质,利用双晶X光测量应变超晶格的性质。 相似文献
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由于半导体量子阱结构限制电子和空穴到极薄区域的量子尺寸效应,导致了它具有二维台阶状的态密度。因此,用这种结构制备的量子阱激光器(QWL)具有低的阈值电流密度,窄的谱线宽度,宽的波长调谐范围以及高的调制频率响应知易实现大功率、短波长可见光输出等优点。本文在描述了这种结构的台阶状态密度分布的基础上,主要介绍了 QWL 主要优异特性和最近的发展水平。最后对今后的发展方向作了预测。 相似文献
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The radiative recombination rate in a quantum well structure is calculated using a constant density of states and the k-selection rule. This calculation shows that the threshold current of a GaAs quantum well laser has low temperature sensitivity (T0 ? 330 K for T > 300 K). 相似文献
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Osinski J.S. Grodzinski P. Zou Y. Dapkus P.D. 《Quantum Electronics, IEEE Journal of》1993,29(6):1576-1585
A comprehensive study of the effect of compressive strain on the threshold current performance of long-wavelength (1.5 μm) quantum-well (QW) lasers is presented. Model predictions of threshold currents in such devices identify QW thickness as a parameter that must be considered in optimizing laser performance when Auger currents are present. Experimental comparisons between strained and unstrained devices reveal strain-induced reductions in internal transparency current density per QW from 66 to 40 A/cm2, an increase in peak differential modal gain from 0.12 to 0.23 cm/A, and evidence for the elimination of intervalence band absorption as compressive strain increases from 0 to 1.8%. However, most of these improvements arise in the first ~1% of compressive strain. To fabricate low-threshold 1.5-μm buried heterostructure (BH) devices in InP using the strained QW active regions an optimized design which shows that threshold current is at its lowest when the stripe width is approximately 0.6-0.7 μm is derived. Results for uncoated BH lasers are reported 相似文献