基于硅锗异质结的二维量子点阵列的制备与表征

硅基半导体量子点中的自旋量子比特近几年来发展迅速,其单比特门与两比特门操作保真度已经突破了容错量子计算的阈值.在此基础上,如何构建硅基量子点二维阵列变得广受学界关注,然而二维阵列复杂的结构在器件制备和测量上均带来挑战.本文设计并成功制备了一种Si/SiGe异质结上的2×4结构八量子点二维阵列器件.借助输运测量方法测量了八量子点器件的全部电荷稳定性相图,并进一步地使用电荷感应调制测量方法得到了器件内的少电子区电荷稳定性相图,说明了对量子点电荷态的高灵敏度探测能力.此外,通过调控势垒电极展示了对量子点间隧穿耦合的调控作用并测量了多量子点耦合的电荷稳定性相图.本文的研究结果展示了使用Si/SiGe异质结构建自旋量子比特二维阵列的潜力,为未来硅量子点二维阵列的进一步扩展提供经验与参考.     

双栅调控的硅量子线中的库仑振荡效应

基于单电子隧穿和库仑阻塞效应,研究了硅量子线中的单电子输运特性.利用绝缘体上硅薄膜材料作为衬底构建侧栅结构的硅量子线单电子晶体管,通过背栅和侧栅对量子线的电子输运特性进行调制.实验发现,在硅量子线中分别观察到背栅和侧栅调制的单电子效应和库仑振荡现象.从微分电导的二维灰度轮廓图,清楚地观察到了库仑阻塞区,说明由于栅压导致在硅量子线中形成了库仑岛.关键词：库仑振荡单电子效应硅量子线     

三角形石墨烯量子点阵列的磁电子学特性和磁输运性质

基于密度泛函理论的第一性原理计算方法,研究了三角形石墨烯纳米片用不同连接方式拼接而成的四种一维量子点阵列(1D QDAs)的磁电子学性质和磁输运性质.结合能计算表明所有1D QDAs是非常稳定的.特别是研究发现1D QDAs的电子和磁性质不仅依赖于磁性态,也明显依赖于连接方式,如在无磁态时,不同量子点阵列(QDAs)可为金属或窄带隙半导体.在铁磁态时,不同QDAs能为半金属(half-metal)或带隙不同的双极化磁性半导体.而在反铁磁态时,不同QDAs为带隙不等的半导体.这些结果意味着连接方式对有效调控纳米结构电子和磁性质扮演重要的角色.1D QDAs呈现的半金属或双极化磁性半导体性质对于发展磁器件是非常重要的,而这些性质未曾在本征石墨烯纳米带中出现.同时,我们也研究了一种阵列的磁器件特性,发现其拥有完美的(100%)单或双自旋过滤效应,尤其是呈现超过109%的巨磁阻效应.     

通过纳米硅中量子点的共振隧穿

用纳米硅(nc-Si∶H)薄膜制成了隧道二极管,并在其I-V曲线上发现了不连续的量子化台阶.二极管的I-V曲线可分成二部分：(1)0—7V,电流随外加电压增大而增大;(2)7—9V,电流随外加电压急剧增大并出现三个量子化台阶.量子化台阶的出现直接与纳米硅中的晶粒有关,根据nc-Si∶H的独特结构,对载流子的传导通道进行了讨论;用通过nc-Si∶H中量子点的共振隧穿对I-V曲线进行了初步解释.关键词：     

纳米硅薄膜的量子特征及其应用前景

文章通过对纳米硅薄膜结构组分的研究,从实验和理论上共同探讨了其低维量子特征,并由此提出其电输运机制及其可见发光机理。最后,综合纳米硅薄膜的各种新颖物性,展望了其在纳米电子学和ＭＥＭＳ（微机电系统）领域内的应用前景。     

多孔硅量子点中的电子局域态

经过激光辐照和高温退火加工能够生成多孔硅样品,在650—780 nm处检测到很强的光致荧光（PL）峰,并且有明显的钉扎和增强效应.实验表明,这种PL发光的强度与样品受辐照和退火的时间短密切相关.通过第一性原理模拟计算发现,样品表面用SiO 双键和Si—O—Si桥键钝化,能隙中会出现电子局域态.激光辐照和高温退火的时间长短决定了样品表面SiO双键和Si—O—Si桥键的密度,而该密度正是影响多孔硅量子点中电子局域态生成的关键.关键词：多孔硅量子点硅氧钝化键电子局域态     

离子注入制备量子光电材料的研究

对由量子限域效应引起的硅纳米晶粒的强烈光致发光现象、离子注入技术制备量子光电材料及其在光电子器件应用领域的优势和前景作了评述和探讨．The strong photoluminescence (PL) of Si nanocrystals origined from the quantum confined effect, the preparation of quantum optoelectronic material by ion implantation as well as the advantages if its application to optoelectronic devices are reviewed and discussed.     

硅量子点发光的激活及其物理模型研究

在真空或惰性气体中制备的硅量子点发光很弱,硅量子点表面被氢较好钝化后的发光也不强.硅量子点表面的硅氧键或硅氮键能破坏这种钝化并在带隙中形成局域电子态,在局域电子态对应的激活中心有很强的发光.可以用这种方式构建发光物质,控制硅量子点表面的键合可获得不同波长的发光.在硅量子点的发光激活处理过程中,退火是很重要的环节.对于硅量子点发光激活的机理,本文给出了相应的物理模型.实验证明,在600和700 nm波长附近观察到了激活硅量子点的受激发光,在1500 nm到1600 nm波长范围观察到了激活硅量子点的较强发光.     

GaAs/AlGaAs量子点阵的制备及其荧光特性

采用电子束曝光和反应离子刻蚀的工艺,将GaAs/AlGaAs量子阱外延材料制成量子点阵,其光荧光谱显示出蓝移,并且蓝移量随着量子点直径尺寸的减少而增大。     

硅量子点中电子的荷电动力学特征

利用频率依赖电容谱的测量,对于SiO₂/硅量子点/SiO₂/硅衬底隧 穿电容中硅量子点的荷电特征进行了研究.由于量子点的极小尺寸和良好的均匀性,室温下 在强反型区成功地观察到了与单电子隧穿相关的两个电容和电导共振峰,它们分别对应于硅 衬底导带上的电子与量子点中第一与第二个基态之间直接隧穿过程.实验数据分析给出了量 子点中的库仑荷电能,并进行了讨论.关键词：量子点电容谱库仑荷电能直接隧穿     

Quantum Information Processing in a Coupled Cavity Array

We consider a one-dimensional array of L identical coupled cavities, and each cavity is doped with a two-level qubit. Experimentally, it has been developed in several varieties by the newest technology. We find that the one-qubit quantum state can be perfectly transferred through the cavity array, and the entanglement between the first two qubits can also be transferred to the last two qubits. In addition, we successfully realized the entangling gate and swap gate in the coupled cavity array.     

Quantum computers and quantum coherence

If the states of spins in solids can be created, manipulated, and measured at the single-quantum level, an entirely new form of information processing, quantum computing, will be possible. We first give an overview of quantum information processing, showing that the famous Shor speedup of integer factoring is just one of a host of important applications for qubits, including cryptography, counterfeit protection, channel capacity enhancement, distributed computing, and others. We review our proposed spin-quantum dot architecture for a quantum computer, and we indicate a variety of first generation materials, optical, and electrical measurements which should be considered. We analyze the efficiency of a two-dot device as a transmitter of quantum information via the propagation of qubit carriers (i.e. electrons) in a Fermi sea.     

Is all-electrical silicon quantum computing feasible in the long term?

The development of the first generation of commercial quantum computers is based on superconductive qubits and trapped ions respectively. Other technologies such as semiconductor quantum dots, neutral ions and photons could in principle provide an alternative to achieve comparable results in the medium term. It is relevant to evaluate if one or more of them is potentially more effective to address scalability to millions of qubits in the long term, in view of creating a universal quantum computer. We review an all-electrical silicon spin qubit, that is the double quantum dot hybrid qubit, a quantum technology which relies on both solid theoretical grounding on one side, and massive fabrication technology of nanometric scale devices by the existing silicon supply chain on the other.     

Quantum Information Processing in a Coupled Cavity Array

We consider a one-dimensional array of L identical coupled cavities, and each cavity is doped with a two-level qubit. Experimentally, it has been developed in several varieties by the newest technology. We find that the one-qubit quantum state can be perfectly transferred through the cavity array, and the entanglement between the first two qubits can also be transferred to the last two qubits. In addition, we successfully realized the entangling gate and swap gate in the coupled cavity array.     

Four-Electron Systems in a Coupled Double-Layer Quantum Dots

Making use of the method of few-body physics, the energy spectrum of a four-electron system consisting in a vertically coupled double-layer quantum dot as a function of the strength ofa magnetic field is investigated. Discontinuous ground-state transitions induced by an external magnetic field are shown. We find that, in the strong coupling case, the ground-state transitions depend not only on the external magnetic field B but also on the distance d between double-layer quantum dots. However, in the case of weak coupling, the ground-state transitions occur in the new sequence of the values of the magic angular momentum. Hence, the interlayer separation d and electron-electron interaction strongly affect the ground state of the coupled quantum dots.     

Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot

We report on the fabrication and the characterization of quantum dot transistors incorporating a single self-assembled quantum dot. The current–voltage characteristics exhibit clear staircase structures at room temperature. They are attributed to electron tunneling through the quantized energy levels of a single quantum dot.     

Temperature dependence of photoluminescence spectra in n-type modulation-doped quantum dot arrays

Temperature dependence of photoluminescence (PL) spectra of an electrostatically prepared modulation-doped quantum dot array is investigated. We report a strong temperature dependence of the enhanced PL near the Fermi energy between 0.4 and 4.2 K under a negative bias condition, where an interconnected quantum dot array is formed. This strong temperature dependence suggests that the Fermi-surface-mediated many-body interaction between a photo-created hole and the electron-gas plays an important role in the observed enhanced PL near the Fermi energy.     

Ground State Transitions in Vertically Coupled Four-Layer Single Electron Quantum Dots

We study a four-electron system in a vertically coupled four-layer quantum dot under a magnetic field by the exact diagonalization of the Hamiltonian matrix. We find that discontinuous ground-state energy transitions are induced by an external magnetic field. We find that dot-dot distance and electron-electron interaction strongly affect the low-lying states of the coupled quantum dots. The inter-dot correlation leads to some sequences of possible disappearances of ground state transitions, which are present for uncoupled dots.