The effect of GaAs(001) substrate roughness on the magnetic properties of epitaxial Fe films

The effect of GaAs(001) surface roughness on the magnetic properties of MBE-grown Fe films having a thickness t in the interval from 12 to 140 Å is investigated by the ferromagnetic resonance method. The films were deposited at room temperature with rates of 9 and 3 Å/min. For films grown on substrates with the rms deviation of the roughness σ≈10 and 30 Å, the spectrum is essentially dependent on the relationship between t and σ. At t≤σ and t≥3σ, a single absorption line is observed, whereas at σ≤t≤3σ, two absorption lines are present. These features of the spectra are related to the island growth of the films and the influence of roughness on island coalescence.     

Comment on “oscillatory indirect interaction between adsorbed atoms — Non-asymptotic behavior in tight-binding models at realistic parameters” by K.H. Lau and W. Kohn

A sensitive infrared reflectance accessory suitable for the study of surface films on medium size single crystals is described. Oxide films formed on the (100), (110) and (111) crystal faces of aluminum in air, at room temperature, display nearly identical behavior with films approximately 10 Å thick absorbing as a single band near 940 cm^?. After 10⁴ sec at 570 °C, in oxygen, films formed on these crystals begin to display differences in band characteristics and growth kinetics. Between 10⁴ and 4 × 10⁴ sec the rates of growth on the (110) and (111) crystal faces are much greater than on the (100) face. Beyond 4 × 10⁴ sec the growth rate on the (100) face increases while the (110) and (111) growth rates approach zero. Limiting thicknesses reached after 4 × 10⁵ sec approach 3.4 × 10², 2.1 × 10² and 2.2 × 10² Å for (100), (110) and (111) faces, respectively. Oxide compositional differences were reflected by the number and form of the infrared bands after 10⁴ sec of oxidation. After 5 × 10⁴ sec the (100) face oxide was composed of two and possibly three oxide species as evidenced by several bands. Differences in bandwidth and frequency were observed between the (110) and (111) oxide films. The significance of such differences is discussed.     

The growth of thin PbO layers on lead films: I. Experiment

The growth of ～ 10 to 100 Å thick, orthorhombic PbO layers on lead was investigated by ellipsometry, electron tunneling and X-ray diffraction. Oxides were grown on 2000 to 15000 Å thick, vacuum-deposited lead films, using: oxygen pressures from 10^?2 to 10⁺³ Torr; temperatures from ?90 to + 150°C; and, times up to several weeks. Apparatus is described for monitoring ellipsometric parameters during oxidation and fabricating PbPbOPb tunnel junction devices in situ. The results indicate that lead recrystallization processes can accelerate the oxidation, so that the rates depend complexly on temperature, lead thickness and microsctructure. The refractive indices provide an indication of the extent of lead recrystallization effects on the oxidation process as well as the accuracy of the oxide thickness determination. X-ray findings indicate that the PbO has the orthorhombic PbO structure, is highly strained while being epitaxially related to the lead, and has a thickness close to that obtained ellipsometrically. Electron tunneling data provide a measure of oxide thickness fluctuations from the average or ellipsometrically-derived values.     

The interference of an electron beam with the surface reaction between oxygen and germanium

Electron beam assisted adsorption and desorption of oxygen was studied by Auger electron spectroscopy (AES). Beam assisted adsorption was observed on clean as well as on oxidized surfaces. After an oxygen exposure of 1000 × 10^?7 Torr min and continuous irradiation with beam voltage of 1.5 kV and beam current density 2 microA mm^?2, the oxygen 510 eV signal amplitude from the point of beam impact was 2.5 times greater than the signal from the non-irradiated region. The Ge 89 eV signal showed a corresponding decrease. Enhanced adsorption occurred at beam energies as low as 16.5 eV. After irradiation, the oxidized surface was not carbon contaminated. Following an oxygen exposure of 30 min at 0.1 Torr and 550°C and subsequent additional beam assisted exposure of 1000 × 10^?7 Torr min, the maximum oxide thickness was about 18 Å. Beam assisted desorption did not occur from thin oxygen layers (0–510 eV signal strength less than 5 units, calculated oxide thickness about 6 Å), but occurred from thick oxides and stopped after the signal amplitude had decreased to 5 units. Based on these results, a model for the structure of the oxygen layer covering the Ge(111) surface is proposed. Mechanisms for adsorption and desorption are discussed. The implications of beam assisted adsorption and desorption on electron beam operated surface measurements (LEED, AES, ELS, APS etc.) are stressed.     

Oriented growth of oxygen-free C60 crystallites on silicon substrates

This is the first report of preparation of C₆₀ fullerite films on silicon substrates coated by a layer of natural oxide. The crystallites are about 1 μm in size. The films were found to have an enhanced stability to atmospheric oxygen. The films were obtained by a modified method of discrete evaporation in a quasi-closed volume. The principal features of the method are the quasi-equilibrium condensation conditions, a high substrate temperature (up to 300 °C), and alternation of deposition with recrystallization in a single technological cycle. The method is characterized by high film condensation rates (up to 2000 ?/min) and an economical expenditure of the starting material. A study has been made of the surface structure and morphology, and of the depth profile of the film optical constants and elemental composition. Fiz. Tverd. Tela (St. Petersburg) 41, 354–359 (February 1999)     

Influence of the germanium deposition rate on the growth and Photoluminescence of Ge(Si)/Si(001) self-assembled islands

The growth and photoluminescence of Ge(Si)/Si(001) self-assembled islands are investigated over a wide range of germanium deposition rates v_Ge = 0.1–0.75 Å/s at a constant growth temperature T _g = 600°C. Examination of the surface of the grown structures with an atomic force microscope revealed that, for all the germanium deposition rates used in the experiments, the dominant island species are dome islands. It is found that an increase in the deposition rate v_Ge leads to a decrease in the lateral size of the self-assembled islands and an increase in their surface density. The decrease in the lateral size is associated both with the increase in the germanium content in the self-assembled islands and with the increase in the fraction of the surface occupied by these islands. The observed shift in the position of the photoluminescence peak toward the low-energy range is also explained by the increase in the germanium content in the islands with an increase in the deposition rate v_Ge.     

Optical characterization of thin thermal oxide films on copper by ellipsometry

A complete optical characterization in the visible region of thin copper oxide films has been performed by ellipsometry. Copper oxide films of various thicknesses were grown on thick copper films by low temperature thermal oxidation at 125 °C in air for different time intervals. The thickness and optical constants of the copper oxide films were determined in the visible region by ellipsometric measurements. It was found that a linear time law is valid for the oxide growth in air at 125 °C. The spectral behaviour of the optical constants and the value of the band gap in the oxide films determined by ellipsometry in this study are in agreement with the behaviour of those of Cu₂O, which have been obtained elsewhere through reflectance and transmittance methods. The band gap of copper oxide, determined from the spectral behaviour of the absorption coefficient was about 2 eV, which is the generally accepted value for Cu₂O. It was therefore concluded that the oxide composition of the surface film grown on copper is in the form of Cu₂O (cuprous oxide). It was also shown that the reflectance spectra of the copper oxide–copper structures exhibit behaviour expected from a single layer antireflection coating of Cu₂O on Cu. Received: 19 July 2001 / Accepted: 27 July 2001 / Published online: 17 October 2001     

Interference in the ultracold neutron transmission through thin layers

At the time-of-flight spectrometer for ultracold neutrons (UCN) with energies below 10^?4 eV at the FRM, Munich, the perpendicular neutron transmission through carbon and gold films of thickness 450 to 800 Å was measured as a function of neutron velocity in the range 11≧v _z≧3.7 m/s. The transmission curves obtained show the expected interference patterns due to interference between the partial waves transmitted and reflected at the two surfaces. From these curves absolute values for the thickness and density could be obtained. From the UCN transmission through a 4.71 μm thick copper foil a value a_coh=7.5±0.15 F was derived for the nuclear scattering length of Cu.     

Influence of electromagnetic radiation on the phase composition of clustered CN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> films

The effect of white and UV radiation on the phase composition of amorphous CN _x films are studied by X-ray diffraction analysis and visible-range spectroscopy. The films have variable-range atomic order and consist of amorphous graphite clusters (30 Å) crystalline clusters (50–100 Å) of graphite, diamond, and carbon nitride phases; and intercluster medium with long-range (1–2 Å) atomic order. It is shown that irradiation of the films by white light facilitates the growth of fine graphite clusters. Irradiation by UV light suppresses the growth of the graphite and carbon nitride phases, favoring the growth of the diamond phase (1.5%). It is demonstrated that a change in the mesoscopic phase composition of the CN _x films causes a change in the energy gap width in the visible range from E _g = 0.75 eV for the films irradiated by white light to E _g = 1.75 eV for those exposed to UV radiation.     

Yttrium oxide thin films prepared under different oxygen-content atmospheres: microstructure and optical properties

Yttrium oxide films were prepared on silicon wafers by reactive magnetron sputtering at different oxygen flow rates to investigate the microstructure and optical properties for desirable planar optical waveguiding applications. Under the different conditions of target surface, the deposition rate, structure, and optical properties have great changes. The deposition rate increases to the maximum, and then monotonically decreases. Oxygen content in films increases and the composition of films transforms from stoichiometry to an oxygen-rich state. Y₂O₃ films grow with the (222) preferred growth orientation at low oxygen flow rate, and then turn into the (622) orientation; the microstructure evolves from crystal structure to amorphous state as oxygen flow rate increases from 2 to 12 sccm. Sufficient oxygen makes films low-order structure and oxygen-rich films have poor crystallinity. Very smooth film has been obtained at oxygen flow rate of 12 sccm. The refractive index can be greatly modulated by the oxygen-content factor. It is convincing that the controllable structure and optical properties of Y₂O₃ films can be achieved by adjustment the oxygen flow rate for desired optical design and applications.     

Optical transmittance and microgravimetric studies of the oxidation of 〈100〉 single crystal films of copper

Thin single crystal copper films have been grown and oxidized on (100) faces of cleaved sodium chloride discs suspended from a vacuum ultramicrobalance. Optical transmittance measurements between 400–800 nm and electron microscopic investigations were also used to characterize the oxidation process. Polycrystalline copper films grown at room temperature are substantially the same as those grown previously on glass substrates. Single crystalline growth at 325 ° C on rock salt produces a characteristic transmittance curve due to the “island” nature of the films. These curves compare favorably with other previously published results. Single crystal copper films oxidized to CuO_0.67 at temperatures of 117–159°C in 100 Torr of oxygen for films less than 500 A thick. For films 378 to 1000 Å thick, compositions of CuO_0.52 to CuO_0.62 were obtained between 123–176°C. The oxidation to less than CuO_0.67 is attributed to the existence of islands in these films which are thicker than the average film thickness, and require higher temperatures or thinner films to permit oxidation to CuO_0.67 before the nucleation of CuO sets in.     

Oxygen flux influence on the morphological, structural and optical properties of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

The Zn_1−xMg_xO thin films were grown on Al₂O₃ substrate with various O₂ flow rates by plasma-assisted molecular beam epitaxy (P-MBE). The growth conditions were optimized by the characterizations of morphology, structural and optical properties. The Mg content of the Zn_1−xMg_xO thin film increases monotonously with decreasing the oxygen flux. X-ray diffractometer (XRD) measurements show that all the thin films are preferred (0 0 2) orientated. By transmittance and absorption measurements, it was found that the band gap of the film decreases gradually with increasing oxygen flow rate. The surface morphology dependent on the oxygen flow rate was also studied by field emission scanning electron microscopy (FE-SEM). The surface roughness became significant with increasing oxygen flow rate, and the nanostructures were formed at the larger flow rate. The relationship between the morphology and the oxygen flow rate of Zn_1−xMg_xO films was discussed.     

Spin-wave resonance in Co/Pd magnetic multilayers and NiFe/Cu/NiFe three-layered films

The spectrum of standing spin waves has been detected by the ferromagnetic resonance method in NiFe(740 Å)/Cu/NiFe(740 Å) three-layered film structure in the perpendicular configuration for the copper thickness d _Cu ≤ 30 Å. At thicknesses d _Cu > 30 Å, the resonance absorption curve is a superposition of two spinwave resonance spectra from individual ferromagnetic NiFe layers. For Co/Pd multilayer films, united spinwave responance spectra have also been observed at thicknesses of the paramagnetic palladium layer up to d _Pd < 30 Å. The partial exchange stiffness has been calculated for a spin wave propagating across the Pd layer (A _Pd = 0.1 × 10^?6 erg/cm). This value is always positive (up to the critical thickness of the palladium interlayer d _Pd < d _c) or equal to zero (d _Pd > d _c).     

Advanced ion beam technology for versatile oxide thin film formation

Various oxide films, such as SnO₂, In₂O₃, Al₂O₃, SiO₂, ZnO, and Sn-doped In₂O₃ (ITO) have been deposited on glass and polymer substrates by advanced ion beam technologies including ion-assisted deposition (IAD), hybrid ion beam, ion beam sputter deposition (IBSD), and ion-assisted reaction (IAR). Physical and chemical properties of the oxide films and adhesion between films and substrates were improved significantly by these technologies. By using the IAD method, non-stoichiometry, crystallinity, and microstructure of the films were controlled by changing assisted oxygen ion energy and arrival ratio of assisted oxygen ion to evaporated atoms. IBSD method has been carried out for understanding the growth mode of the films on glass and polymer substrate. Relationships between microstructure and electrical properties in ITO films on polymer and glass substrates were intensively investigated by changing ion energy, reactive gas environment, substrate temperature, etc. Smooth-surface ITO films (R_rms ⩽ 1 nm and R_p−v ⩽ 10 nm) for organic light-emitting diodes were developed with a combination of deposition conditions with controlling microstructure of a seed layer on glass. IAR surface treatment enormously enhanced the adhesion of oxide films to polymer substrate. In the case of Al₂O₃ and SiO₂ films, the oxygen and moisture barrier properties were also improved by IAR surface treatment. The experimental results of the oxide films prepared by the ion beam technologies and its applications will be represented in detail.     

Absorption of H and D Ly-α radiation by O2 molecules at high temperatures

Absorption cross sections of molecular oxygen were measured at the H and D Ly-α wavelengths (1215.67 and 1215.34 Å) between 800 and 1700°K, the cross sections being given by the equation σ (cm²) = 4.2E-18 exp(-3070/T) (4.2E-18 = 4.2 × 10^-18). The absorption cross section for v = 1 is (9±2)E-19 cm² and that for v = 2 is (7±3)E-18 cm², compared to 1.E-20 cm² for v = 0. Vibrational relaxation times were found to be in agreement with literature data over the range of common temperatures.     

RF-plasma assisted pulsed laser deposition of nitrogen-doped SrTiO3 thin films

Perovskite-type nitrogen substituted SrTiO₃ thin films were deposited with a one-step process by RF-plasma assisted pulsed laser deposition from a SrTiO₃ target using a N₂ plasma, while deposition with a NH₃ plasma yields films with almost no incorporated nitrogen. The deposited films exhibit a cubic perovskite-type crystal structure and reveal oriented growth on MgO(100) substrates. The unit cell parameters of the studied N-doped SrTiO₃ films range within 3.905<a<3.918 Å, which is slightly larger than for SrTiO₃ (a=3.905 Å). The nitrogen content in the deposited films varies from 0.2 to 0.7 atom%. The amount of incorporated nitrogen in the films decreases with increasing RF-power, while the N₂ flow rate does not have any pronounced influence on the N content. Nitrogen incorporation results in an increased optical absorption at 400–600 nm, which is associated with N(2p) energy states that have a higher energy level than the valence band in strontium titanate. The optical band gap energies in the studied N-doped SrTiO₃ films are at 3.2–3.3 eV, which is very similar to that of pure strontium titanate (～3.2 eV). Films deposited with NH₃ for the RF-plasma exhibit a lower degree of crystallinity and reveal almost no nitrogen incorporation into the crystal lattice.     

Oxidation of iron within the scanning electron microscope: Oxide crystallite growth kinetics during the oxidation of iron in CO2

The growth of magnetite (Fe₃O₄) on a polycrystalline iron substrate has been continuously followed in situ in the S.E.M. at 500°C in 13.3 N m^?2 CO₂. Medium resolution (250 Å) micrographs of the same area have been taken at time intervals over periods of oxidation in excess of 200 hr. Successive layers of oxide crystallites grow according to the same logarithmic rate law, but the overall thickening rate of the oxide film conforms to the parabolic rate law. A theoretical analysis of this situation suggests that the dominant factor determining the overall growth kinetics is the frequency of oxide nucleation steps. It can be shown that the basic logarithmic growth of individual oxide crystallites could lead to a variety of overall growth processes, depending upon the conditions required for nucleation.     

Structural transformations on Cu(110) under molecular iodine action

Interaction of molecular iodine with the Cu(110) surface is investigated by the methods of ultrahigh vacuum scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). It is found that at the coverage θ =0.5 monolayer (ML) iodine forms a simple commensurate c(2×2) lattice. Further exposure of iodine leads to uniaxial compression of the c(2×2) lattice along the 〈110〉 direction of the substrate. The STM data indicate that compression of the iodine layer proceeds through formation of striped domain walls. As the coverage is saturated at θ = 0.63 ML, iodine forms a uniformly compressed quasi-hexagonal structure. Further exposure of iodine on the Cu(110) surface results in growth of a copper iodide film. STM images of thin (7 to 20 Å) CuI films reveal, in addition to atomic modulation, a superstructure with a period of 90 to 100 Å consisting of double stripes. A structure model of the copper iodide surface allowing for CuI lattice contraction and formation of double stripe domain walls is proposed.     

Effect of annealing on the opto-electronic properties of Cu0.9In1.0Se2.0 films

The influence of annealing on the structure and opto-electronic properties of Cu_0.9In_1.0Se_2.0 films prepared by solution growth technique has been studied. The films annealed at 500–520°C in air, vacuum (10^?4 torr), In-vapour and Se-vapour show polycrystalline chalcopyrite structure with orientation perpendicular to the (220) plane. Films annealed in Se-vapour at 500°C for 30 min have maximum grain size (560 Å), minimum optical energy gap, maximum absorption coefficient, lowest resistivity, maximum photosensitivity and thus are suitable for photovoltaic applications. Annealing in In-vapour or in vacuum changesp-type CuInSe₂ inton-type which possibly arises due to the increase in Se vacancies.     

A photoemission study of the interaction of Ni(100), (110) and (111) surfaces with oxygen

Photoelectron spectroscopic studies of the oxidation of Ni(111), Ni(100) and Ni(110) surfaces show that the oxidation process proceeds at 295 and 485 K in two distinct steps: a fast dissociative chemisorption of oxygen followed by oxide nucleation and lateral oxide growth to a limiting coverage of 3 NiO layers. The oxygen concentration in the 295 K saturated oxygen layer on Ni(111) was confirmed by ¹⁶O(d,p) ¹⁷O nuclear microanalysis. At 295 and 485 K the oxide growth rates are in the order Ni(110) > Ni(111) > Ni(100). At 77 K the oxygen uptake proceeds at the same rate on all three surfaces and shows a continually decreasing sticking coefficient to saturation at ~2.1 layers (based upon NiO). An O 1sb.e. = 529.7 eV is associated with NiO, and O ls b.e.'s of ~531.5 and 531.3 eV can be associated, respectively, with defect oxide (Ni₂O₃) or (in the presence of H₂O) with an NiO(H) species. The binding energies (Ni 2p, O 1s) of this NiO(H) species are similar to those for Ni(OH)₂. Defect oxides are produced by oxidation at 485 K, or by oxidation of damaged films (e.g. from Ar⁺ sputtering) and evaporated films. Wet oxidation (or exposure to air) of clean nickel surfaces and oxides, and exposure of thick oxide to hydrogen at high temperature results in an O 1s b.e. ~531.3 eV species. Nuclear microanalysis ²H(³He,p) ⁴He indicates the presence of protonated species in the latter samples. Oxidation at 77 K yields O 1s b.e.'s of 529.7 and ~531 eV; the nature of the high b.e. species is not known. Both clean and oxidised nickel surfaces show a low reactivity towards H₂O; clean nickel surfaces are ~10³ times less reactive to H₂O than to oxygen.