Effect of doping and thermal vacancies on positron annihilation in semiconductors

The effect of lattice defects on positron annihilation in semiconductors was studied. In silicon, any detectable doping effect could not be found. In germanium, the thermal equilibrium measurements of annihilation lineshapes showed no vacancy effect. From these experimental facts, the interaction of positrons with lattice defects was discussed.     

On positron annihilation in zinc

The purpose of this work is to understand Mogensen's and Petersen's positron annihilation curves for zinc. Mijnarends' approach is used as an auxiliary method of localizing inhomogeneities of the electronic density in momentum space, as defined in the paper. Evidence is found for a new effect consisting of a strong enhancement of the annihilation probability in the lenses obtained by the intersection of the Fermi surface with HMC surfaces. This effect, not the anisotropy of the Fermi surface, is the main reason for the anisotropy of the annihilation curves. Paper presented at 3rd Internat'l Conf. Positron Annihilation, Otaniemi, Finland (August 1973).     

化合物半导体材料的正电子寿命计算

在局域密度理论（LDA）和广义梯度理论（GGA）的基础上计算了ZnO,GaN,GaAs,SiC和InP五种化合物半导体材料中的正电子湮没信息,包括化合物半导体材料中的自由态正电子的湮没寿命;还有不同类型空位（单空位,双空位）附近俘获的束缚态正电子密度分布和湮没率分布,以及束缚态正电子的湮没寿命. 关键词： 半导体 正电子寿命     

氘化对KH2PO4晶体微观缺陷影响的正电子湮没研究

采用传统降温法从不同程度氘化(x=0, 0.51, 0.85)的生长溶液中生长氘化KH₂PO₄(KDP) 晶体, 利用正电子湮没技术(正电子寿命谱和多普勒展宽谱)、结合X射线衍射谱(XRD) 结构分析, 对KDP晶体氘化生长的微观缺陷进行了研究, 讨论了氘化程度对晶体内部微观结构特性、缺陷类型和浓度的影响. XRD结果显示晶胞参数a, b值随氘含量的增加而增加, c值无明显变化; 正电子寿命谱结果发现随着氘化浓度的提高, KDP晶体内部中性填隙缺陷以及氧缺陷不断增加, 引起晶体晶格畸变; 氢空位、K空位、杂质替位缺陷不断发生缔合反应形成复合缺陷, 缺陷浓度不断减少; 团簇、微空洞等大尺寸缺陷也在不断发生聚合反应, 缺陷浓度表现为不断减少. 多普勒实验结果表明随着氘化程度的提升, 晶体内部各类缺陷表现为同步变化. 实验结果表明, KDP晶体在低浓度氘化生长(50%以内)下缺陷反应较弱, 而在高浓度氘化(50%以上)下的缺陷反应显著增强.     

Study on distribution of electron momentum density and Fermi surface in lead by positron annihilation

The momentum density of electrons and the Fermi surface are measured in metal lead by the technique of positron annihilation. The three-dimensional electron-positron momentum distribution is reconstructed from measurements of the two-dimensional angular correlation of positron annihilation radiation (2D-ACAR), followed by the image reconstruction technique based on a direct Fourier transformation. On the basis of the obtained experimental spectrum, the Fermi surface topology, the high momentum components (HMC), the enhancement effect, and the autocorrelation function are discussed. The obtained experimental results are in good agreement with theoretical calculations.     

Localized positronium atoms in porous structures studied by 2D-ACAR

The localization of positronium (Ps) atoms was studied by measurements of two-dimensional angular correlation of positron annihilation radiation (2D-ACAR) for porous glasses. Annihilations of positron-electron pairs with a large anisotropy were found in 2D-ACAR spectra. This fact can be attributed to the momentum uncertainty due to the localization of Ps in a finite dimension of pores. The present investigation showed the possibility of the detection of microstructures in amorphous materials by the 2D-ACAR technique.     

Positron annihilation in Si and GaAs crystals with an applied magnetic field

The narrow components in angular correlation curves of positron annihilation in Si and GaAs were observed. Hence it follows the formation of positronium-like states in semiconductors. Effects of mechanical and radiation treatment of the samples of Ps-states are discussed.     

Directional compton profile studies of GaP

59.54 keV gamma ray Compton profiles (CP) of GaP along (100) and (1 1 1) directions are reported. The measured anisotropy has qualitatively similar features as given by the recent pseudopotential calculations for other III–V compound semiconductors. The average valence profile is found to be more peaked compared to that of the pure covalent semiconductors Si and Ge. This suggests that inonicity has the effect of making the valence-electron wave functions of compound semiconductors more diffused. Theoretical calculations on the directional Compton profiles of GaP will be of great use for an exact comparision with the present data, which will help in detailed understanding of the electronic structure of GaP.     

Doppler broadening of positron annihilation photons in metals

The Doppler broadening of positron annihilation photons was measured in 17 metals. A model which considers the positron lifetime spectra in metals to be composed of terms for annihilation with conduction and core electrons and surface centers of low electron momentum is used to correlate calculated core annihilation rates with the Doppler lineshape. Ta metal was doped with defects with high energy implantations of¹⁴N⁺⁴ ions at variable doses. Differences in the Doppler linewidths were ascribed as being principally a reflection of the probabilty of annihilation with core electrons relative to annihilation with conduction electrons.     

Silicide formation in Co/Si system investigated by depth-resolved positron annihilation and X-ray diffraction

The transformation of Co/Si to CoSi₂/Si in the temperature range of 300-1170 K has been investigated using depth-resolved positron annihilation and Glancing incidence X-ray diffraction (GIXRD). The different silicide phases formed are identified from the experimental positron annihilation characteristics, which are consistent with the GIXRD results. The present study clearly indicates the absence of vacancy defects in the silicide overlayer.     

Electron momentum distribution in palladium

Results of a band structure calculation of the electron momentum distribution (EMD) for positron annihilation and Compton scattering in Pd are reported. Significant anisotropy in the EMD for 〈100〉, 〈110〉 and 〈111〉 direction is indicated.     

Vacancy-solute complexes in aluminum

Several vacancy-solute complexes in the Al matrix are examined theoretically. In particular, these are V-Cu, V-Cd, V-In, V-Sn, V-Si and V-Fe. We concentrate on coincidence Doppler broadening (high momentum) profiles and positron lifetimes that bring complementary information about these defects. Positron calculations are carried out utilizing the atomic superposition method employing realistic atomic configurations obtained using an ab initio pseudopotential method. In this study we inspect to what extent such defects are detectable and differentiable using positron annihilation techniques. The influence of lattice relaxations around defects on the positron properties turns out to be important and is also debated. The obtained results are discussed in connection with experimental data published in literature.     

High-momentum analysis in Doppler spectroscopy

Unique information about the chemical vicinity of positron annihilation sites is provided by the contribution of high electron momenta to the Doppler spectrum, since this momentum range is characteristic for the annihilation with core electrons and hence element specific. However, the corresponding energy region in the spectrum is overlaid by a huge background caused by the annihilation radiation itself and the Compton spectrum of other gamma lines having an energy above 511 keV. Usually these backgrounds are reduced by measuring both annihilation quanta in coincidence.By mathematically analyzing the background contributions, we open another possibility to obtain the high-momentum region employing one single germanium detector. A necessary precondition is employing either background-free positron beams or a low-background positron source, e.g. ⁶⁸Ge, instead of the widely used positron emitter ²²Na. The ⁶⁸Ge-source emits positrons with an endpoint energy of about 1.9 MeV, where as the contribution of gamma quanta having higher energies than the annihilation radiation at 511 keV is negligible low.When analyzing spectra from metals and semiconductors according to the described background subtraction, the same information contained in the momentum range up to 35 × 10⁻³m₀c or beyond can be extracted, as if the spectra were measured employing a coincidence setup with two Ge-detectors.     

Study of the effect of annealing on defects in Fe-Mn-Si-Cr-Ni-C alloy by slow positron beam

FeMnSi shape memory alloys (SMAs) have received much attention as one-way SMAs due to their cost-effectiveness. Variable-energy (0-30 keV) positron beam studies have been carried out on a Fe-Mn-Si-Cr-Ni-C alloy with different degrees of deformation. Doppler broadening profiles of the positron annihilation as a function of incident positron energy were shown to be quite sensitive to defects introduced by deformation. The variation of the nature and the concentration of defects are studied as a function of isochronal annealing temperature. These results are correlated with the data measured with the positron annihilation lifetime spectroscopy (PALS). The positron annihilation results are compared to XRD and optical microscopy (OM).     

B和H离子顺次注入单晶Si 引起的缺陷及其热演变(英文)

室温下将130 keV,5x1014 cm-2 B离子和55 keV,1x1016 cm-2 H离子单独或顺次注入到单晶Si中,采用横截面试样透射电子显微镜(XTEM)和慢正电子湮没技术(SPAT) 研究了离子注入引起的微观缺陷的产生及其热演变。XTEM观测结果显示,B 和H 离子顺次注入到单晶Si 可有效减少(111) 取向的H板层缺陷,并促进了(100) 取向的H板层缺陷的择优生长。SPAT 观测结果显示,在顺次注入的样品中,B 离子平均射程处保留了大量的空位型缺陷。以上结果表明,B离子本身及B 离子注入所产生的空位型缺陷对板层缺陷的生长起到了促进作用。Abstract:Cz n-type Si (100) wafers were singly or sequentially implanted at room temperature with 130 keV B ions at a fluence of 5x1014 cm-2 and 55 keV H ions at a fluence of 1x1016 cm-2. The implantation-induced defects were investigated in detail by using cross-sectional transmission electron microscopy (XTEM) and slow positron annihilation technique (SPAT). XTEM results clearly show that sequential implantation of B and H ions into Si could eliminate the (111) platelets and promote growth of (100) platelets during annealing. SPATmeasurements demonstrate that in B and H sequentially implanted and annealed Si, more vacancy-type defects could remain in sample region around the range of B ions. These results indicat e that the promotion effect shouldbe attributed to the role of both B and B implanted induced vacancy-type defects.     

Electronic and structural properties of hydrogen on semiconductor surfaces

In this paper we will review the scientific literature which addresses the atomic geometry and electronic structure of clean and hydrogenated semiconductor surfaces. In particular, results related to vibrational studies will be presented. First, surfaces of elemental semiconductors (Ge, Si), Ge/Si-alloys, and III–V compound semiconductors chemisorb in a first stage atomic hydrogen by saturating surface atom dangling bonds. In a second step surface bonds are broken and a change of the geometrical structure results. Finally, higher hydrogen exposures are able to etch semiconductor surfaces. Best understood to date are surfaces of Si(1 0 0), Si(1 1 1), Ge_xSi_1−x(1 0 0), and III–V's after cleavage which have been modeled by dimerized and undimerized structures. (1 0 0) surfaces of III–V semiconductors, like GaAs and InP, tend to be dimerized, too.     

Self-energy correction to momentum-density distribution of positron-electron pairs

Positron two-dimensional angular correlation of annihilation radiation (2D ACAR), i.e., the 2D projection of the electron momentum densities sampled by positron, in Si is employed to verify the prediction of the density functional theory within the local-density approximation (LDA). Carefully conducted test shows that the LDA introduces small but definite discrepancies to the 2D-ACAR anisotropies. Self-energy calculation using the GW method indicates that density-fluctuation contributes anisotropic momentum-density correction and thus improves the agreement between theory and experiment. These results provide valuable annotations to the arguments concerning the accuracy and validity of the LDA and GW schemes.     

Positron annihilation in boron-implanted n-type silicon

The ion damaged effect and subsequent isothermal annealing in boron-implanted Si was studied by positron annihilation lifetime measurements. The mean positron lifetime in preimplanted n-type Si is 243 psec. The variation of mean lifetime is detectable when the implanted boron dose is greater than 1.0x10¹⁵/cm². The saturated mean positron lifetime (247 psec) occurs when the implantation dose reaches 2.5x10¹⁵/cm². The mean electron density of the positron sensitive defects is estimated to be about 85% less than that in the perfect parts of the crystal. Isothermal annealing was held in every 5-minute step at 1000°C. In the first step, the positron lifetime in the implanted sample increases slightly and then decreases completely to its initial state in the 3rd step. Sheet resistance of the sample monitored by 4-point probe method has been found closely related to the positron lifetime.