Weak localization in monolayer and bilayer graphene

We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.     

Anisotropic resistivity of the monolayer graphene in the trigonal warping and connected Fermi curve regimes

In the present study, the anisotropic resistivity of the monolayer graphene has been obtained in semiclassical regime beyond the Dirac point approximation. In particular, detailed investigations were made on the dependence of conductivity on the Fermi energy. At low energies, in the vicinity of the Dirac points, band energy of the monolayer graphene is isotropic at the Fermi level. Meanwhile, at the intermediate Fermi energies anisotropic effects such as trigonal warping is expected to be the origin of the anisotropic resistivity. However, besides the band anisotropy there also exists an other source of anisotropic resistivity which was introduced by scattering matrix. At high energies it was shown that the band anisotropy is less effective than the anisotropy generated by the scattering matrix. It was also shown that there exist two distinct regimes of anisotropic resistivity corresponding the trigonal warping and connected Fermi curve at intermediate and high energies respectively.     

Quantum magneto-optics of the graphite family

The optical conductivity of graphene, bilayer graphene, and graphite in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall’s, are evaluated analytically. The conductivity peaks are explained in terms of electron transitions. Correspondences between the transition frequencies and the magneto-optical features are established using the theoretical results. We show that trigonal warping can be considered within the perturbation theory for strong magnetic fields larger than 1 T. The semiclassical approach is applied for weak fields when the Fermi energy is much larger than the cyclotron frequency. The main optical transitions obey the selection rule with Δn = 1 for the Landau number n, but the Δn = 2 transitions due to the trigonal warping are also possible. The Faraday/Kerr rotation and light transmission/reflection in quantizing magnetic fields are calculated. Parameters of the Slonczewski-Weiss-McClure model are used in the fit taking the previous de Haas-van Alphen measurements into account and correcting some of them in the case of strong magnetic fields.     

Band structure effects on the nonlinear optical response of bilayer graphene

Recently, Rabi-like oscillations that occur far from resonance were predicted in monolayer graphene. In bilayer graphene, when the trigonal warping effect is taken into account, this new Rabi frequency shows a zero non-trivial minimum as a function of the strength of the applied electric field in addition to the trivial minimum at zero field. The zero non-trivial minimum occurs where the ‘leg pocket’ of the Fermi surface develops, described in the pioneering work of McCann et al. [Eur. Phys. J. Special Topics 148, 91 (2007)]. Thereafter, the anomalous Rabi frequency varies linearly with the square of the intensity of the applied field consistent with a bilayer system without trigonal warping. It is seen that this anomalous Rabi frequency is affected much more by trigonal warping than the conventional Rabi frequency. The induced current is also significantly affected by the trigonal warping. A fully numerical solution of the optical Bloch equations completely corroborates the analytical findings and provides a basis for the approximation schemes employed.     

The effect of spin-orbit interaction on optical conductivity in graphene

We present a systematic investigation of the effect of spin-orbit interaction on optical conductivity in monolayer graphene. Our key findings are: (i) level splitting at various crystal symmetry points caused by true spin as well as pseudospin of the electrons gives rise to a resonant current response; (ii) under heavy doping, the spin-orbit interaction leads to a re-entrance of finite conductivity at very low frequency which was strictly forbidden in the absence of spin-orbit coupling; (iii) deformation of band structure and the topological properties of trigonal warping are analytically identified in a low-energy conical-like approximation.     

Electric- and magnetic-field-tuned Landau levels and Hall conductivity in AA-stacked bilayer graphene

We theoretically study the combined effect of magnetic and electric fields on the Landau levels and Hall conductivity in AA-stacked bilayer graphene. From the analytic expressions derived, we obtain explicit criterions for determining the zero-energy Landau level and different level crossings in the graphene bilayer. For providing a scheme of experimental verification, we further explore the quantum Hall effect in such a biased bilayer. It is found that the zero-conductance Hall plateau in this system can vanish at certain specific combinations of magnetic and electric fields, accompanying with the occurrence of resonance Hall conductivity steps.     

Charge fractionalization in biased bilayer graphene

Fractional charge may arise when fermionic zero modes exist in a topological background field. In biased bilayer graphene (BBLG), the bias plays the role of the nontrivial background field. When semi-infinite BBLG with a zigzag edge is used, the dynamics induces an odd number of zero-energy modes, which, together with the conjugation symmetry between positive-?and negative-energy states, are the requisite conditions for fractionalization. Exploiting the trigonal interaction to isolate a given zero-energy mode on the zigzag edge, we consider extended and localized modes (the latter being obtained from a localized wavepacket generated by prior irradiation of the sample with an electromagnetic vortex). The valley degeneracy is lifted by a layer asymmetry, while an edge-induced spin polarization breaks the spin degeneracy. We describe scenarios for the detection of charge-[Formula: see text] edge states.     

Fully valley-polarized electron beams in graphene

We propose a device to break the valley degeneracy in graphene and produce fully valley-polarized currents that can be either split or collimated to a high degree in a experimentally controllable way. The proposal combines two recent seminal ideas: negative refraction and the concept of valleytronics in graphene. The key new ingredient lies in the use of the specular shape of the Fermi surface of the two valleys when a high electronic density is induced by a gate voltage (trigonal warping). By changing the gate voltage in a n-p-n junction of a graphene transistor, the device can be used as a valley beam splitter, where each of the beams belong to a different valley, or as a collimator. The result is demonstrated through an optical analogy with two-dimensional photonic crystals.     

Perturbation theory for a hamiltonian linear in quasimomentum

Perturbation theory has been proposed to take into account small terms in the multiband Hamiltonian, which lead to significant changes such as the trigonal warping of the Fermi surface. The theory is similar to the “cross technique” and is reduced to the self-energy corrections to the matrix Green’s function. A particular application to graphite and a graphene bilayer has been given.     

High-energy limit of massless Dirac fermions in multilayer graphene using magneto-optical transmission spectroscopy

We have investigated the absorption spectrum of multilayer graphene in high magnetic fields. The low-energy part of the spectrum of electrons in graphene is well described by the relativistic Dirac equation with a linear dispersion relation. However, at higher energies (>500 meV) a deviation from the ideal behavior of Dirac particles is observed. At an energy of 1.25 eV, the deviation from linearity is approximately 40 meV. This result is in good agreement with the theoretical model, which includes trigonal warping of the Fermi surface and higher-order band corrections. Polarization-resolved measurements show no observable electron-hole asymmetry.     

Spin filter,spin amplifier and spin diode in graphene nanodisk

Graphene nanodisk is a graphene derivative with a closed edge. The trigonal zigzag nanodisk with size N has N-fold degenerated zero-energy states. It can be interpreted as a quantum dot with an internal degree of freedom. The ground state of nanodisk is a quasi-ferromagnet, which is a ferromagnetic-like state with a finite but very long life time. We investigate spin-filter effects in the system made of nanodisks and leads. A novel feature of the nanodisk spin filter is that its spin can be controlled by the spin current. We propose some applications for spintronics, such as spin memory, spin amplifier and spin diode. It is argued that a spin current is reinforced (rectified) by feeding it into a nanodisk spin amplifier (diode). Graphene nanodisk would be a promising candidate of future electronic and spintronic nanodevices.     

Weak-localization magnetoresistance and valley symmetry in graphene

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore conventional negative magnetoresistance. We show this by evaluating the dependence of the magnetoresistance of graphene on relaxation rates associated with various possible ways of breaking a "hidden" valley symmetry of the system.     

Cyclotron motion in the vicinity of a Lifshitz transition in graphite

Graphite, a model (semi)metal with trigonally warped bands, is investigated with a magnetoabsorption experiment and viewed as an electronic system in the vicinity of the Lifshitz transition. A characteristic pattern of up to 20 cyclotron resonance harmonics has been observed. This large number of resonances, their relative strengths and characteristic shapes trace the universal properties of the electronic states near a separatrix in momentum space. Quantum-mechanical perturbative methods with respect to the trigonal warping term hardly describe the data which are, on the other hand, fairly well reproduced within a quasiclassical approach and conventional band structure model. Trigonal symmetry is preserved in graphite in contrast to a similar system, bilayer graphene.     

Localized states at zigzag edges of bilayer graphene

We report the existence of zero-energy surface states localized at zigzag edges of bilayer graphene. Working within the tight-binding approximation we derive the analytic solution for the wave functions of these peculiar surface states. It is shown that zero-energy edge states in bilayer graphene can be divided into two families: (i) states living only on a single plane, equivalent to surface states in monolayer graphene and (ii) states with a finite amplitude over the two layers, with an enhanced penetration into the bulk. The bulk and surface (edge) electronic structure of bilayer graphene nanoribbons is also studied, both in the absence and in the presence of a bias voltage between planes.     

空位缺陷对金属基外延石墨烯态密度和电导率的影响

考虑到空位缺陷的存在和原子非简谐振动,以铜、镍基外延石墨烯为例, 研究了金属基外延石墨烯空位缺陷浓度和态密度以及电导率随温度的变化规律,探讨了空位缺陷的影响。结果表明：(1) 空位缺陷浓度随温度升高而非线性增大,外延石墨烯的空位缺陷浓度及其随温度的变化率均大于石墨烯; (2) 与石墨烯相同,金属基外延石墨烯的态密度变化曲线对电子能量为0为对称,但空位缺陷的存在使态密度在电子能量为零时的值不为零,空位缺陷对导带态密度的影响大于价带;态密度随空位缺陷浓度的增大而线性减小,但减小幅度不大,而温度对石墨烯态密度几乎无影响;（3）金属基外延石墨烯的电导率近似等于电子声子相互作用贡献的电导率,并随温度升高而非线性减小;空位缺陷的存在使电导率有所减小,但只在较高温度下才明显。原子非简谐振动情况的电导率稍大于简谐近似的电导率,温度愈高,两者电导率的差愈大,即非简谐效应愈显著。     

The low energy electronic band structure of bilayer graphene

We employ the tight binding model to describe the electronic band structure of bilayer graphene and we explain how the optical absorption coefficient of a bilayer is influenced by the presence and dispersion of the electronic bands, in contrast to the featureless absorption coefficient of monolayer graphene. We show that the effective low energy Hamiltonian is dominated by chiral quasiparticles with a parabolic dispersion and Berry phase 2π. Layer asymmetry produces a gap in the spectrum but, by comparing the charging energy with the single particle energy, we demonstrate that an undoped, gapless bilayer is stable with respect to the spontaneous opening of a gap. Then, we describe the control of a gap in the presence of an external gate voltage. Finally, we take into account the influence of trigonal warping which produces a Lifshitz transition at very low energy, breaking the isoenergetic line about each valley into four pockets.     

Resonant Raman spectroscopy of graphene grown on copper substrates

A study of resonant Raman spectroscopy of the as-grown graphene on copper foils is presented. Different laser energies have been used to excite the sample, in order to obtain the dependence of the Raman features (intensities, frequencies and line widths) on the laser energy. We show that the normalised spectra acquired using green laser lines are more intense, with a maximum around 2.3 eV. Moreover, the results show a broader 2D (or G′) band when a UV laser is used to excite the sample, which is explained by the manifestation of the trigonal warping effect in the dispersion of electrons and phonons around the Dirac point.     

Weak antilocalization in epitaxial graphene: evidence for chiral electrons

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak antilocalization in 2D samples manifests itself as a broad cusplike depression in the longitudinal resistance for magnetic fields 10 mT相似文献   

Band structure and edge states of star-like zigzag graphene nanoribbons

Connecting three zigzag graphene nanoribbons(ZGNRs) together through the sp~3 hybrid bonds forms a star-like ZGNR(S-ZGNR). Its band structure shows that there are four edge states at k = 0.5, in which the three electrons distribute at three outside edge sites, and the last electron is shared equally(50%) by two sites near the central site. The lowest conductance step in the valley is 2, two times higher than that of monolayer ZGNR(M-ZGNR). Furthermore, in one quasithree-dimensional hexagonal lattice built, both of the Dirac points and the zero-energy states appear in the band structure along the z-axis for the fixed zero k-point in the x-y plane. In addition, it is an insulator in the x-y plane due to band gap 4 eV, however, for any k-point in the x-y plane the zero-energy states always exist at k_z = 0.5.