Quantized anomalous Hall effect in two-dimensional ferromagnets: quantum Hall effect in metals

We study the effect of disorder on the anomalous Hall effect (AHE) in two-dimensional ferromagnets. The topological nature of the AHE leads to the integer quantum Hall effect from a metal, i.e., the quantization of sigma(xy) induced by the localization except for the few extended states carrying Chern numbers. Extensive numerical study on a model reveals that Pruisken's two-parameter scaling theory holds even when the system has no gap with the overlapping multibands and without the uniform magnetic field. Therefore, the condition for the quantized AHE is given only by the Hall conductivity sigma(xy) without the quantum correction, i.e., /sigma(xy)/>e(2)/(2h).     

Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors

The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.     

Quantum Hall effect of massless dirac fermions in a vanishing magnetic field

The effect of strong long-range disorder on the quantization of the Hall conductivity sigma{xy} in graphene is studied numerically. It is shown that increasing Landau-level mixing progressively destroys all plateaus in sigma{xy} except the plateaus at sigma{xy}=-/+e{2}/2h (per valley and per spin). The critical state at the Dirac point is robust to strong disorder and belongs to the universality class of the conventional plateau transitions in the integer quantum Hall effect. We propose that the breaking of time-reversal symmetry by ripples in graphene can realize this quantum critical point in a vanishing magnetic field.     

Anomalous Hall effect of facing-target sputtered ferrimagnetic Mn4N epitaxial films with perpendicular magnetic anisotropy

Epitaxial Mn$_{4}$N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect (AHE) is investigated systematically. The Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic field. The magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from 300 K to 150 K. The AHE scaling law in Mn$_{4}$N films is influenced by the temperature-dependent magnetization, carrier concentration and interfacial scattering. Different scaling laws are used to distinguish the various contributions of AHE mechanisms. The scaling exponent $\gamma > 2$ for the conventional scaling in Mn$_{4}$N films could be attributed to the residual resistivity $\rho_{xx0}$. The longitudinal conductivity $\sigma_{xx}$ falls into the dirty regime. The scaling of $\rho_{\rm AH}=\alpha \rho_{xx0} +b\rho_{xx}^{n}$ is used to separate out the temperature-independent $\rho_{xx0}$ from extrinsic contribution. Moreover, the relationship between $\rho_{\rm AH}$ and $\rho_{xx}$ is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE, which demonstrates that the dominant mechanism of AHE in the Mn$_{4}$N films can be ascribed to the competition between skew scattering, side jump and the intrinsic mechanisms.     

Anomalous Hall effect in ferromagnetic semiconductors in the hopping transport regime

We present a theory of the anomalous Hall effect in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of the anomalous Hall conductivity in this system can be attributed to a phase that a hole gains when hopping around closed-loop paths in the presence of spin-orbit interactions and background magnetization of the localized Mn moments. Mapping the problem to a random resistor network, we derive an analytic expression for the macroscopic anomalous Hall conductivity sigma(AH)(xy). We show that sigma(AH)(xy) is proportional to the first derivative of the density of states varrho(epsilon) and thus can be expected to change sign as a function of impurity band filling. We also show that sigma(AH)(xy) depends on temperature as the longitudinal conductivity sigma(xx) within logarithmic accuracy.     

Spin chirality fluctuations and anomalous Hall effect in itinerant ferromagnets

The anomalous Hall effect due to the spin chirality order and fluctuation is studied theoretically in a Kondo lattice model without the relativistic spin-orbit interaction. Even without the correlations of the localized spins, sigma(xy) can emerge depending on the lattice structure and the spin anisotropy. We reveal the condition for this chirality-fluctuation driven mechanism for sigma(xy). Our semiquantitative estimates for a pyrochlore oxide Nd2Mo2O7 give a finite sigma(xy) approximately equal 10 Omega(-1) cm(-1) together with a high resistivity rho(xx) approximately equal 10(-4)-10(-3) Omega cm, in agreement with experiments.     

Intrinsic versus extrinsic anomalous Hall effect in ferromagnets

A unified theory of the anomalous Hall effect (AHE) is presented for multiband ferromagnetic metals with dilute impurities. In the clean limit, the AHE is mostly due to extrinsic skew scattering. When the Fermi level is located around anticrossing of band dispersions split by spin-orbit interaction, the intrinsic AHE to be calculated ab initio is resonantly enhanced by its nonperturbative nature, revealing the extrinsic-to-intrinsic crossover which occurs when the relaxation rate is comparable to the spin-orbit coupling.     

Unconventional anomalous Hall effect enhanced by a noncoplanar spin texture in the frustrated Kondo lattice Pr2Ir2O7

We have investigated the Hall effect in the geometrically frustrated Kondo lattice Pr2Ir2O7. In its spin-liquid-like paramagnetic regime, the Hall resistivity rho(xy) is found to increase logarithmically on cooling. Moreover, in this low temperature region, the field dependence of the Hall conductivity sigma(xy) shows a large enhancement up to 30 Omega(-1) cm(-1) as well as a nonmonotonic change with the magnetization. Our results are far different from the anomalous Hall effect due to the spin-orbit coupling observed in ordinary magnetic conductors. We discuss the possible spin-chirality effect in the Ir 5d conduction band due to the noncoplanar texture of Pr<111> Ising-like moments.     

Anomalous nernst effects in pyrochlore molybdates with spin chirality

The transverse thermoelectric (Nernst) effect on pyrochlore molybdates is investigated experimentally. In Nd(2)Mo(2)O(7) and Sm(2)Mo(2)O(7) with the spin chirality, the Nernst signal, which mostly arises from the transverse heat current (or equivalently the transverse Peltier coefficient alpha(xy)), shows a low-temperature (20-30 K) positive extremum, whereas it is absent in (Gd(0.95)Ca(0.05))(2)Mo(2)O(7) with no single-spin anisotropy of the rare-earth ion and hence with no spin chirality. The correlation between the Hall conductivity sigma(xy) and alpha(xy) in Nd(2)Mo(2)O(7) also indicates the spin chirality plays a significant role in the spontaneous (anomalous) Nernst effect.     

Analysis of the anomalous Hall effect in a double layer of a ferromagnetic and a normal metal

A new method is suggested to investigate the mechanism of the anomalous Hall effect (AHE) in ferromagnetic metals. Using a double layer of a ferromagnet and a normal metal of increasing thickness one can manipulate the AHE in the ferromagnet without changing the ferromagnet's structure and electronic properties. The conduction electrons from the normal metal carry their drift velocity across the interface into the ferromagnetic film and induce an additional AHE conductance ΔG_xy. Its dependence on the mean free path in the normal metal distinguishes between the side jump and the skew scattering mechanisms for the AHE in the ferromagnet.     

Pressure tuning of the anomalous Hall effect in the kagome superconductor CsV3Sb5

Controlling the anomalous Hall effect(AHE)inspires potential applications of quantum materials in the next generation of electronics.The recently discovered quasi-2D kagome superconductor CsV₃Sb₅ exhibits large AHE accompanying with the charge-density-wave(CDW)order which provides us an ideal platform to study the interplay among nontrivial band topology,CDW,and unconventional superconductivity.Here,we systematically investigated the pressure effect of the AHE in CsV₃Sb₅.Our high-pressure transport measurements confirm the concurrence of AHE and CDW in the compressed CsV₃Sb₅.Remarkably,distinct from the negative AHE at ambient pressure,a positive anomalous Hall resistivity sets in below 35 K with pressure around 0.75 GPa,which can be attributed to the Fermi surface reconstruction and/or Fermi energy shift in the new CDW phase under pressure.Our work indicates that the anomalous Hall effect in CsV₃Sb₅ is tunable and highly related to the band structure.     

Pure anomalous Hall effect in nonmagnetic zinc-blende semiconductors

We report the experimental observation of the pure anomalous Hall effect (AHE) in nonmagnetic zinc-blende semiconductors without application of the external magnetic fields. The AHE without any contribution from the ordinary Hall current originates from nonequilibrium magnetization induced by spin-polarized electrons generated by the circularly polarized light (σ). We measure the pure AHE as a function of the external bias, crystal temperature and pumping σ-photon energy. The results of their dependences are discussed.     

Co-occurrence of superparamagnetism and anomalous hall effect in highly reduced cobalt-doped rutile TiO2-delta films

We report a detailed magnetic and structural analysis of highly reduced Co doped rutile TiO(2-delta) films displaying an anomalous Hall effect (AHE). The temperature and field dependence of magnetization, and transmission electron microscopy, clearly establish the presence of nanosized superparamagnetic cobalt clusters of approximately 8-10 nm size in the films at the interface. The co-occurrence of superparamagnetism and AHE raises questions regarding the use of the AHE as a test of the intrinsic nature of ferromagnetism in diluted magnetic semiconductors.     

Some implications of inclusive electro- and neutrino production data

We systematically exploit the reported data on \(F_2^{\gamma p} ,F_2^{\gamma n} ,\sigma ^{vN} ,\sigma ^{\bar vN} ,\left\langle {xy} \right\rangle _{vN} ,\left\langle {xy} \right\rangle _{\bar vN} ,\left\langle {1 - y} \right\rangle _{vN} \) and \(\left\langle {1 - y} \right\rangle _{\bar vN} \) in order to test various versions of the quark parton model and to obtain further predictions.     

Spin Hall effect in doped semiconductor structures

In this Letter we present a microscopic theory of the extrinsic spin Hall effect based on the diagrammatic perturbation theory. Side-jump and skew-scattering contributions are explicitly taken into account to calculate the spin Hall conductivity, and we show that their effects scale as sigma(xy)SJ/sigma(xy)SS approximately (h/tau)/epsilonF, with tau being the transport relaxation time. Motivated by recent experimental work we apply our theory to n- and p-doped 3D and 2D GaAs structures, obtaining sigma(s)/sigma(c) approximately 10(-3)-10(-4), where sigma(s(c)) is the spin Hall (charge) conductivity, which is in reasonable agreement with the recent experimental results of Kato et al. [Science 306, 1910 (2004)] in n-doped 3D GaAs system.     

Manipulation of intrinsic quantum anomalous Hall effect in two-dimensional MoYN2CSCl MXene

Quantum anomalous Hall effect (QAHE) is an innovative topological spintronic phenomenon with dissipationless chiral edge states and attracts rapidly increasing attention. However, it has only been observed in few materials in experiments. Here, according to the first-principles calculations, we report that the MXene MoYN$_{2}$CSCl shows a topologically nontrivial band gap of 37.3~meV, possessing QAHE with a Chern number of $C = 1$, which is induced by band inversion between $ {\rm d}_{xz}$ and ${\rm d}_{yz}$ orbitals. Also, the topological phase transition for the MoYN$_{2}$CSCl can be realized via strain or by turning the magnetization direction. Remarkably, MoYN$_{2}$CSCl shows the nodal-line semimetal state dependent on the electron correlation $U$. Our findings add an experimentally accessible and tunable member to the QAHE family, which stands a chance of enriching the applications in spintronics.     

The family of topological Hall effects for electrons in skyrmion crystals

Hall effects of electrons can be produced by an external magnetic field, spin–orbit coupling or a topologically non-trivial spin texture. The topological Hall effect (THE) – caused by the latter – is commonly observed in magnetic skyrmion crystals. Here, we show analogies of the THE to the conventional Hall effect (HE), the anomalous Hall effect (AHE), and the spin Hall effect (SHE). In the limit of strong coupling between conduction electron spins and the local magnetic texture the THE can be described by means of a fictitious, “emergent” magnetic field. In this sense the THE can be mapped onto the HE caused by an external magnetic field. Due to complete alignment of electron spin and magnetic texture, the transverse charge conductivity is linked to a transverse spin conductivity. They are disconnected for weak coupling of electron spin and magnetic texture; the THE is then related to the AHE. The topological equivalent to the SHE can be found in antiferromagnetic skyrmion crystals. We substantiate our claims by calculations of the edge states for a finite sample. These states reveal in which situation the topological analogue to a quantized HE, quantized AHE, and quantized SHE can be found.     

Scaling law of anomalous Hall effect in Fe/Cu bilayers

The scaling of anomalous Hall resistivity on longitudinal resistivity has been intensively studied in different magnetic systems, including multilayer and granular films, to examine whether a skew scattering or a side jump mechanism dominates in the origin of anomalous Hall effect (AHE). The scaling law is based on the premise that both resistivities are a consequence of electron scattering by the imperfections in the materials. By studying the anomalous Hall effect in the simple Fe/Cu bilayers, it was demonstrated that the measured anomalous Hall effect should not follow the scaling laws derived from skew scattering or side jump mechanism due to the short-circuit and shunting effects of the non-magnetic layers.     

Quantum anomalous hall effect in Hg1-yMnyTe quantum wells

The quantum Hall effect is usually observed when a two-dimensional electron gas is subjected to an external magnetic field, so that their quantum states form Landau levels. In this work we predict that a new phenomenon, the quantum anomalous Hall effect, can be realized in Hg{1-y}Mn{y}Te quantum wells, without an external magnetic field and the associated Landau levels. This effect arises purely from the spin polarization of the Mn atoms, and the quantized Hall conductance is predicted for a range of quantum well thickness and the concentration of the Mn atoms. This effect enables dissipationless charge current in spintronics devices.     

Quantum anomalous Hall effect and related topological electronic states

Over a long period of exploration, the successful observation of quantized version of anomalous Hall effect (AHE) in thin film of magnetically doped topological insulator (TI) completed a quantum Hall trio—quantum Hall effect (QHE), quantum spin Hall effect (QSHE), and quantum anomalous Hall effect (QAHE). On the theoretical front, it was understood that the intrinsic AHE is related to Berry curvature and U(1) gauge field in momentum space. This understanding established connection between the QAHE and the topological properties of electronic structures characterized by the Chern number. With the time-reversal symmetry (TRS) broken by magnetization, a QAHE system carries dissipationless charge current at edges, similar to the QHE where an external magnetic field is necessary. The QAHE and corresponding Chern insulators are also closely related to other topological electronic states, such as TIs and topological semimetals, which have been extensively studied recently and have been known to exist in various compounds. First-principles electronic structure calculations play important roles not only for the understanding of fundamental physics in this field, but also towards the prediction and realization of realistic compounds. In this article, a theoretical review on the Berry phase mechanism and related topological electronic states in terms of various topological invariants will be given with focus on the QAHE and Chern insulators. We will introduce the Wilson loop method and the band inversion mechanism for the selection and design of topological materials, and discuss the predictive power of first-principles calculations. Finally, remaining issues, challenges and possible applications for future investigations in the field will be addressed.