Reversing the training effect in exchange biased CoO/Co bilayers

We performed a detailed study of the training effect in exchange biased CoO/Co bilayers. High-resolution measurements of the anisotropic magnetoresistance (AMR) display an asymmetry in the first magnetization reversal process and training in the subsequent reversal processes. Surprisingly, the AMR measurements as well as magnetization measurements reveal that it is possible to partially reinduce the untrained state by performing a hysteresis measurement with an in-plane external field perpendicular to the cooling field. Indeed, the next hysteresis loop obtained in a field parallel to the cooling field resembles the initial asymmetric hysteresis loop, but with a reduced amount of spin rotation occurring at the first coercive field. This implies that the antiferromagnetic domains, which are created during the first reversal after cooling, can be partially erased.     

Magnetization anisotropy of Ni dots with several tens of nanometer diameter

We have studied the magnetization of Ni dot with 50 to 70 nanometer diameter and 12 nanometer thickness using a magnetic force microscopy with an in-plane magnetic field. The Ni dots were prepared using self-assembled dot patterns with poly (styrene-b-methyl mathacrylate) diblock copolymers on Ni film and ion etching. It was found that the remanent magnetization direction of the dot was perpendicular to the plane as prepared. From the vibrating sample magnetometer measurement, a hysteresis loop was found in the perpendicular magnetization. When an in-plane external magnetic field was applied, the magnetization was rotated into a horizontal direction with low coercivity along the field direction.     

Kinetics of magnetization reversal in a thin La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> manganite film

The kinetics of magnetization reversal of a thin LSMO film has been studied for the first time. It is shown that the magnetic domain structure critically depends on the conditions of structure formation. In the demagnetized state (after zero-field cooling from T _c ), a maze-like domain microstructure with perpendicular magnetization is formed in the film. However, after field cooling and/or saturating magnetization by a field of arbitrary orientation, the [110] direction of spontaneous magnetization in the film plane is stabilized; this pattern corresponds to macrodomains with in-plane magnetization. Further film magnetization reversal (both quasi-static and pulsed) from this state is implemented via nucleation and motion of 180° “head-to-head” domain walls. Upon pulse magnetization reversal, the walls “jump” at a distance proportional to the applied field strength and then undergo thermally activated drift. All dynamic characterisitcs critically depend on the temperature when the latter varies around the room temperature.     

Magnetization switching modes in nanopillar spin valve under the external field

The current-induced magnetic switching is studied in Co/Cu/Co nanopillar with an in-plane magnetization traversed under the perpendicular-to-plane external field.Magnetization switching is found to take place when the current density exceeds a threshold.By analyzing precessional trajectories,evolutions of domain walls and magnetization switching times under the perpendicular magnetic field,there are two different magnetization switching modes:nucleation and domain wall motion reversal;uniform magnetization ...     

Features of magnetization reversal in LCMO/YBCO heterostructures

The change in the magnetic domain structure due to the proximity of a superconductor has been experimentally investigated for the first time. The complex character of magnetization reversal at temperatures below critical, caused by the mutual long-range effect of a superconductor and a magnet, has been shown. In particular, it is found that even magnetization reversal of the heterostructure by an in-plane field leads to the formation of Abrikosov vortices in the superconductor, carrying a flux perpendicularly to the film plane. It is shown that this is a consequence of the transformation of narrow domain walls into wide stripes due to the interaction with scattering fields from the superconductor. In turn, after penetration of the magnetic flux into the superconductor at some depth, the scattering fields cause backward magnetization reversal of the external film edge, as a result of which vortices with oppositely directed fluxes enter the crystal and propagate in the superconductor bulk in the form of chains along twins, as in the case of magnetization by a perpendicular magnetic field. Thus, at longitudinal magnetization, the flux enters the superconducting film in the form of wide stripes with alternating perpendicular induction, which is explained by the long-range interaction of the scattering fields of the superconductor with the manganite magnetization.     

Remanence due to wall magnetization and counterintuitive magnetometry data in 200-nm films of Ni

200-nm-thick Ni films in an epitaxial Cu/Ni/Cu/Si(001) structure are expected to have an in-plane effective magnetic anisotropy. However, the in-plane remanence is only 42%, and magnetic force microscopy domain images suggest perpendicular magnetization. Quantitative magnetic force microscopy analysis can resolve the inconsistencies and show that (i) the films have perpendicular domains capped by closure domains with magnetization canted at 51 degrees from the film normal, (ii) the magnetization in the Bloch domain walls between the perpendicular domains accounts for the low in-plane remanence, and (iii) the perpendicular magnetization process requires a short-range domain wall motion prior to wall-magnetization rotation and is nonhysteretic, whereas the in-plane magnetization requires long-range motion before domain-magnetization rotation and is hysteretic.     

Spin reorientation transition in (111) textured L10 CoPt layers

In this work, a spin reorientation transition from [001] axis to an in-plane direction occurs near Curie temperature under a small external field for (111) textured L1₀ CoPt layers in an AlN/CoPt multilayer film, indicating the dominant role of the shape anisotropy at elevated temperatures over the magnetocrystalline anisotropy. A large in-plane residual magnetization is also observed after cooling the sample from a temperature above the Curie point. The formation of magnetization during cooling is considered due to the alignment of magnetic moments along the easy axis by the small field in the spin reorientation transition temperature region. Our work reveals the importance of shape anisotropy for the formation of magnetization in the heat assisted magnetic recording process.     

Effect of substrate temperature on the magnetic properties and internal stresses of CoPt/AlN multilayer deposited by dc magnetron sputtering

Magnetic properties and internal stresses of AlN(20 nm)/[CoPt(2 nm)/AlN(20 nm)]₅ multilayer structure deposited at different substrate temperatures by dc magnetron sputtering have been studied. It is found that with increasing the substrate temperature from room temperature to 400 °C, in-plane magnetic anisotropy field of the film becomes smaller, and the out-of-plane magnetization becomes stronger. Especially when the film is deposited at substrate temperature of 400 °C, the out-of-plane magnetization becomes as strong as the in-plane magnetization. On the other hand, the total in-plane residual stress of the film changes gradually from compressive to tensile. The compressive intrinsic stress is generated during deposition process and decreases with increasing the substrate temperature. After annealing at high temperatures, the films show strong perpendicular magnetic anisotropy. With increasing the annealing temperature, the in-plane thermal stress also increases and becomes dominant, which is considered to result in the perpendicular magnetic anisotropy of the films.     

自旋轨道矩调控的垂直磁各向异性四态存储器结构

利用氧化钽缓冲层对垂直各向异性钴铂多层膜磁性的影响,构想并验证了一种四态存储器单元.存储器器件包含两个区域,其中一区域的钴铂多层膜[Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)]直接生长在热氧化硅衬底上,另一个区域在磁性膜和衬底之间沉积了一层氧化钽作为缓冲层[TaO x(0.3 nm)/Pt(3 nm)/Co(0.47 nm)/Pt(1.5 nm)],缓冲层导致两个区域的垂直磁各向异性不同.在固定的水平磁场下对器件施加与磁场同向的电流,由于电流引起的自旋轨道耦合力矩,两个区域的磁化取向均会发生翻转,且拥有不同的临界翻转电流.改变通过器件导电通道的电流脉冲形式,器件的磁化状态可以在4个态之间切换.本文器件的结构为设计自旋轨道矩存储器件提供了新的思路.     

Field dependent specific heat and longitudinal magnetization of the quantum magnet layer Cs2CuCl4: Anisotropy effects

We have addressed the specific heat and magnetization of an anisotropic spin-1/2 triangular Heisenberg antiferromagnet Cs₂CuCl₄ in the presence of magnetic field at finite temperature. We have investigated the behavior of thermodynamic properties by means of excitation spectrum in terms of a hard core bosonic representation. The effect of in-plane anisotropy on thermodynamic properties has also been studied via the bosonic model by Green’s function approach. This anisotropy is considered for exchange constants that couple spin components perpendicular to magnetic field direction. We have found the temperature dependence of the specific heat and longitudinal magnetization in the gapped field induced spin-polarized phase for various magnetic fields and anisotropy parameters. Furthermore we have studied the magnetic field dependence of specific heat and magnetization for various anisotropy parameters. Our results show temperature dependence of specific heat includes a peak so that its temperature position goes to higher temperature with increase of magnetic field. We have found the magnetic field dependence of specific heat shows a monotonic decreasing behavior for various magnetic fields due to increase of energy gap in the excitation spectrum.     

Anisotropic pinned/biased magnetization in SrRuO3/SrMnO3 superlattices

The exchange coupling at the interfaces of magnetic superlattices consisting of ferromagnetic SrRuO3 and antiferromagnetic SrMnO3 grown on (001) oriented SrTiO3 is studied with in-plane and out-of-plane orientations of the cooling magnetic field, with respect to the substrate plane. The magnetization of the in-plane, field cooled hysteresis loop is lower than the corresponding in-plane zero-field-cooled hysteresis loop. The out-of-plane field cooled hysteresis loop is shifted, from the origin, along the graphical magnetization axis. We attribute this irreversible rotation of the moment to the pinning/biasing of spin in the SrRuO3 layer in the vicinity of interfaces by the antiferromagnetic SrMnO3 layer.     

Asymmetric kinetics of magnetization reversal of thin exchange-coupled ferromagnetic films

This paper reports on the results of the investigation of the kinetics of magnetization reversal in FeNi-FeMn ferromagnet-antiferromagnet thin hybrid films grown by magnetron sputtering on silicon substrates in the presence of in-plane magnetic field, which provided unidirectional in-plane magnetic anisotropy in the ferromagnetic layer and a single-domain structure of the ferromagnet in the absence of an external magnetic field. The constructed hysteresis loops and magnetization loci have made it possible to reveal the specific features of the magnetization reversal process of an exchange-coupled ferromagnet, to establish new types of asymmetry, and to obtain new proofs for the existence of a spin spring at the ferromagnet-antiferromagnet interface. The visualization of the magnetization reversal process has allowed one to establish a one-to-one correspondence between the macrocharacteristics of the material and the real processes occurring in ferromagnet-antiferromagnet hybrid structures.     

Interface biquadratic coupling and magnon scattering in exchange-biased ferromagnetic thin films grown on epitaxial FeF2

The magnetic anisotropy of ferromagnetic (FM) Ni, Co, and Fe polycrystalline thin films grown on antiferromagnetic (AF) FeF(2)(110) epitaxial layers was studied, as a function of temperature, using ferromagnetic resonance. In addition to an in-plane anisotropy in the FM induced by fluctuations in the AF short-range order, a perpendicular (biquadratic) magnetic anisotropy, with an out-of-plane component, was found which increased with decreasing temperature above the AF Neél temperature (T(N) = 78.4 K). This is a surprising result given that the AF's uniaxial anisotropy axis was in the plane of the sample, but is consistent with prior experimental and theoretical work. The resonance linewidth had a strong dependence on the direction of the external magnetic field with respect to in-plane FeF(2) crystallographic directions, consistent with interface magnon scattering due to defect-induced demagnetizing fields. Below T(N), the exchange bias field H(E) measured via FMR for the Ni sample was in good agreement with H(E) determined from magnetization measurements if the perpendicular out-of-plane anisotropy was taken into account. A low field resonance line normally observed at H ≈ 0, associated with domain formation during magnetization in ferromagnets, coincided with the exchange bias field for T < T(N), indicating domain formation with the in-plane FM magnetization perpendicular to the AF easy axis. Thus, biquadratic FM-AF coupling is important at temperatures below and above T(N).     

Magnetization process of Fe layers in Fe/Nd multilayered films investigated by57Fe Mössbauer spectroscopy

The magnetization process of Fe and Nd layers at 5K in Fe/Nd multilayered films with strong perpendicular magnetic anisotropy is elucidated from a comparison of⁵⁷Fe Mössbauer spectra in the presence of the external field applied parallel to the film plane with total magnetization. At zero external field, the film has a magnetic multi-domain structure. The Nd layer moment is perpendicular to the film plane and the Fe layer moment points in the out-of-plane direction. The Fe layer moment monotonically rotates to the in-plane direction with increasing external field parallel to the film plane, while the Nd layer moment is oriented to the film normal direction up to the external field of 10kOe, above which the Nd layer moment gradually turns to the direction of the external field.     

面内形状各向异性能对自旋转矩振荡器零场振荡特性的影响

利用Landau-Lifshitz-Gilbert-Slonczewski方程, 在理论上研究了由磁矩垂直于膜面的自由层和磁矩平行于膜面的极化层组成的自旋转矩振荡器的振荡特性. 数值结果表明面内的形状各向异性能, 可以使自旋转矩振荡器在无磁场情形下产生自激振荡. 此特性可以用能量平衡方程解释, 即面内形状各向异性能可以导致系统中自旋转矩提供的能量与阻尼过程所消耗的能量之间的平衡. 特别是, 面内的形状各向异性能越大, 自旋转矩振荡器的可操控电流范围越大, 并且产生微波信号的频率越大, 但其阈值电流几乎不变.     

Correlations between electronic energy bands spin splitting and magnetic profile symmetry of magnetic superlattice

We have theoretically investigated the energy band structures of two typical magnetic superlattices formed by perpendicular or parallel magnetization ferromagnetic stripes periodically deposited on a two-dimensional electron gas (2DEG), where the magnetic profile in the perpendicular magnetization is of inversion anti-symmetry, but of inversion symmetry in parallel magnetization, respectively. We have shown that the energy bands of perpendicular magnetization display the spin-splitting and transverse wave-vector symmetry, while the energy bands of the parallel magnetization exhibit spin degeneration and transverse wave-vector asymmetry. These distinguishing spin-dependent and transverse wave-vector asymmetry features are essential for future spintronics devices applications.     

Recovery of soft magnetic properties of FeNiSm films by Ta interlayer

The magnetic properties of FeNiSm thin films with different thicknesses, different Ta interlayer thicknesses and different numbers of Ta interlayers were investigated. The single layer FeNiSm shows in-plane uniaxial anisotropy at a thickness below critical value, but shows weak perpendicular anisotropy with a stripe domain structure at thickness above the critical value. Experiments indicate that one or more Ta interlayers inserted into thick FeNiSm films with weak perpendicular anisotropy were effective not only in canceling the perpendicular anisotropy, but also in recovering the in-plane uniaxial anisotropy. Blocking of the columnar growth of FeNi grains by the Ta interlayer is considered to be responsible for this spin reorientation phenomenon. Moreover, the magnetization reversal mechanism in FeNiSm films with uniaxial anisotropy can be ascribed to coherent rotation when the applied field is close to the hard axis and to domain-wall unpinning when the applied field is close to the easy axis. The dynamic magnetic properties of FeNiSm films with uniaxial anisotropy were investigated in the frequency range 0.1-5 GHz. The degradation of the soft magnetic properties of magnetic thin films due to the growth of columnar grains can be avoided by insertion of a Ta interlayer.     

Effect of the magnetic field in the plane of a garnet ferrite film with orthorhombic magnetic anisotropy on the dynamics of domain walls

The effect of an in-plane magnetic field on the dependence of the domain-wall velocity on the acting magnetic field is investigated for bismuth-containing garnet ferrite single-crystal films of the composition (Bi,Y,Pr)₃(Fe,Ga)₅O₁₂ with the (210) orientation. The in-plane magnetic field is applied along the 〈120〉 and 〈001〉 crystallographic axes. The domain-wall velocity is measured in directions perpendicular and parallel to the in-plane magnetic field.     

Analytical study of magnetization dynamics driven by spin-polarized currents

An analytical approach is presented for the study of magnetization dynamics driven by spin-polarized currents. Two cases are considered: (i) magnetic layers with in-plane uniaxial anisotropy; (ii) magnetic layers with uniaxial anisotropy and applied field perpendicular to the layer plane. Theoretical predictions are obtained for the existence of stationary modes and self-oscillations of magnetization by solving the deterministic Landau-Lifshitz-Gilbert equation with Slonczewski spin-torque term. Thermal fluctuations are studied by deriving the corresponding Fokker-Planck equation for the magnetization probability distribution. Analytical procedures to estimate the effective potential barrier separating self-oscillatory regimes and/or stationary modes are proposed.     

Effect of carbon mixing on the perpendicular magnetization of [FePt/C]n=4/FePt multilayer nanocomposite films

The effect of carbon mixing on the perpendicular magnetization of magnetron sputtered FePt thin films was studied using magnetic property measurement, X-ray diffraction, and TEM microscopy. Micromagnetic simulation was carried out to study the effect of texture on the perpendicular coercivity. Unlike general conviction, the mixing of FePt with carbon led to a significant enhancement in the perpendicular magnetization. The maximum enhancement of perpendicular magnetization was observed at about 20 vol% of carbon, where carbon amorphous film started to completely enclose the individual FePt grains. This reason was explained that the epitaxial growth and thus perpendicular texture of ordered FePt grains were maximized due to the relaxation of coherency for epitaxial growth which was maximized in the isolated grains. The perpendicular coercivity reached 8500 Oe, while the in-plane coercivity (120 Oe) remained negligible. The simulation showed that the enhancement of perpendicular texture can largely increase the perpendicular coercivity of FePt:C thin film.